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Researcher profile

Andrew M. Mounce

Andrew M. Mounce contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.ins-detphysics.app-ph

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Published work

6 published item(s)

preprint2026arXiv

Homogeneous Microwave Delivery for Quantum Sensing with Nitrogen-Vacancy Centers at High Pressures

Nitrogen vacancy (NV) centers have been demonstrated as a useful tool in high pressure environments. However, the geometry and small working area of the diamond anvil cells (DACs) used to apply pressure present a challenge to effective delivery of microwave (mw) fields. We designed and characterized a novel slotted design for mw transmission to nitrogen-vacancy centers (NVs) in a diamond anvil cell via zero-field and in-field optically detected magnetic resonance (ODMR) measurements across pressures between 1 and 48 GPa. The mw fields experienced by NVs across the diamond culet was calculated from Rabi frequency and found to be higher and more uniform than those generated by an equivalent simple mw line, which will improve performance for wide-field, high-pressure measurements to probe spatial variations across samples under pressure.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy

The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mm-field of view with μm-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A/m, corresponding to a smallest detectable current in the 200 μm-wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing

Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P incorporation as the size of such a window is increased. We augment a kinetic model for PH$_3$ dissociation leading to P incorporation on Si(100)-2$\times$1 to include barriers for reactions across distinct dimer rows. Using this model, we demonstrate that even for a window consisting of 2$\times$3 silicon dimers, the probability that at least one donor incorporates is nearly unity. We also examine the impact of size of the lithographic window, finding that the incorporation fraction saturates to $δ$-layer like coverage as the circumference-to-area ratio approaches zero. We predict that this incorporation fraction depends strongly on the dosage of the precursor, and that the standard deviation of the number of incorporations scales as $\sim \sqrt{n}$, as would be expected for a series of largely independent incorporation events. Finally, we characterize an array of experimentally prepared multi-donor lithographic windows and use our kinetic model to study variability due to the observed lithographic roughness, predicting a negligible impact on incorporation statistics. We find good agreement between our model and the inferred incorporation in these windows from scanning tunneling microscope measurements, indicating the robustness of atomic-precision advanced manufacturing to errors in patterning for multi-donor patches.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Nanoscale Solid-State Nuclear Quadrupole Resonance Spectroscopy using Depth-Optimized Nitrogen-Vacancy Ensembles in Diamond

Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2-D materials with magnetic phenomena, inductively-detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in nanomaterials. The nitrogen-vacancy (NV) center in diamond has shown promise in bringing the analytic power of NMR and NQR spectroscopy to the nanoscale. However, due to depth-dependent formation efficiency of the defect centers, noise from surface spins, band bending effects, and the depth dependence of the nuclear magnetic field, there is ambiguity regarding the ideal NV depth for surface NMR of statistically-polarized spins. In this work, we prepared a range of shallow NV ensemble layer depths and determined the ideal NV depth by performing NMR spectroscopy on statistically-polarized \fluorine{} in Fomblin oil on the diamond surface. We found that the measurement time needed to achieve an SNR of 3 using XY8-N noise spectroscopy has a minimum at an NV depth of 5.4 nm. To demonstrate the sensing capabilities of NV ensembles, we perform NQR spectroscopy on the \boron{} of hexagonal boron nitride flakes. We compare our best diamond to previous work with a single NV and find that this ensemble provides a shorter measurement time with excitation diameters as small as 4 $μ$m. This analysis provides ideal conditions for further experiments involving NMR/NQR spectroscopy of 2-D materials with magnetic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The impact of stochastic incorporation on atomic-precision Si:P arrays

Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is $63 \pm 10\%$ for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A physically unclonable function using NV diamond magnetometry and micromagnet arrays

A physically unclonable function (PUF) is an embedded hardware security measure that provides protection against counterfeiting. Here we present our work on using an array of randomly-magnetized micron-sized ferromagnetic bars (micromagnets) as a PUF. We employ a 4 $μ$m thick surface layer of nitrogen-vacancy (NV) centers in diamond to image the magnetic fields from each micromagnet in the array, after which we extract the magnetic polarity of each micromagnet using image analysis techniques. After evaluating the randomness of the micromagnet array PUF and the sensitivity of the NV readout, we conclude by discussing the possible future enhancements for improved security and magnetic readout.

0 citations0 reviewsNo code linkedOpen access