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Qiushi Guo

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Published work

6 published item(s)

preprint2022arXiv

All-optical ultrafast ReLU function for energy-efficient nanophotonic deep learning

In recent years, the computational demands of deep learning applications have necessitated the introduction of energy-efficient hardware accelerators. Optical neural networks are a promising option; however, thus far they have been largely limited by the lack of energy-efficient nonlinear optical functions. Here, we experimentally demonstrate an all-optical Rectified Linear Unit (ReLU), which is the most widely used nonlinear activation function for deep learning, using a periodically-poled thin-film lithium niobate nanophotonic waveguide and achieve ultra-low energies in the regime of femtojoules per activation with near-instantaneous operation. Our results provide a clear and practical path towards truly all-optical, energy-efficient nanophotonic deep learning.

preprint2022arXiv

Intense optical parametric amplification in dispersion engineered nanophotonic lithium niobate waveguides

Strong amplification in integrated photonics is one of the most desired optical functionalities for computing, communications, sensing, and quantum information processing. Semiconductor gain and cubic nonlinearities, such as four-wave mixing and stimulated Raman and Brillouin scattering, have been among the most studied amplification mechanisms on chip. Alternatively, material platforms with strong quadratic nonlinearities promise numerous advantages with respect to gain and bandwidth, among which nanophotonic lithium niobate is one of the most promising candidates. Here, we combine quasi-phase matching with dispersion engineering in nanophotonic lithium niobate waveguides and achieve intense optical parametric amplification. We measure a broadband phase-sensitive on-chip amplification larger than 45 dB/cm in a 2.5-mm-long waveguide. We further confirm high gain operation in the degenerate and non-degenerate regimes by amplifying vacuum fluctuations to macroscopic levels in a 6-mm-long waveguide, with on-chip gains exceeding 100 dB/cm over 600 nm of bandwidth around 2 $μ$m. Our results unlock new possibilities for on-chip few-cycle nonlinear optics, mid-infrared photonics, and quantum photonics.

preprint2016arXiv

Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications

Synapses are functional links between neurons, through which "information" flows in the neural network. These connections vary significantly in strength, typically resulting from the intrinsic heterogeneity in their chemical and biological properties. Such heterogeneity is fundamental to the diversity of neural activities, which together with other features of the brain enables functions ranging from perception and recognition, to memory and reasoning. Realizing such heterogeneity in synaptic electronics is critical towards building artificial neural network with the potential for achieving the level of complexity in biological systems. However, such intrinsic heterogeneity has been very challenging to realize in current synaptic devices. Here, we demonstrate the first black phosphorus (BP) synaptic device, which offers intrinsic anisotropy in its synaptic characteristics directly resulting from its low crystal symmetry. The charge transfer between the 2-nm native oxide of BP and the BP channel is utilized to achieve the synaptic behavior. Key features of biological synapses such as long-term plasticity with heterogeneity, including long-term potentiation/depression and spike-timing-dependent plasticity, are mimicked. With the anisotropic BP synaptic devices, we also realize a simple compact heterogeneous axon-multi-synapses network. This demonstration represents an important step towards introducing intrinsic heterogeneity to artificial neuromorphic systems.

preprint2016arXiv

Protective Molecular Passivation of Black Phosphorous

Black phosphorous (BP) is one of the most interesting layered materials, bearing promising potential for emerging electronic and optoelectronic device technologies. The crystalline structure of BP displays in-plane anisotropy in addition to the out-of-plane anisotropy characteristic to layered materials. Therefore, BP supports anisotropic optical and transport responses that can enable unique device architectures. Its thickness-dependent direct bandgap varies in the range of around 0.3-2.0 eV (from single-layer to bulk, respectively), making BP suitable to optoelectronics in a broad spectral range. With high room-temperature mobility, exceeding 1,000 cm2V-1s-1 in thin films, BP is also a very promising material for electronics. However, BP is sensitive to oxygen and humidity due to its three-fold coordinated atoms. The surface electron lone pairs are reactive and can lead to structural degradation upon exposure to air, leading to significant device performance degradation in ambient condition. Here, we report a viable solution to overcome degradation in few-layer BP by passivating the surface with self-assembled monolayers of octadecyltrichlorosilane (OTS) that provide long-term stability in ambient conditions. Importantly, we show that this treatment does not cause any undesired carrier doping of the bulk channel material, thanks to the emergent hierarchical interface structure. Our approach is compatible with conventional electronic materials processing technologies thus providing an immediate route toward practical applications in BP devices.

preprint2015arXiv

Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Two-dimensional (2D) layered materials with diverse properties have attracted significant interest in the past decade. The layered materials discovered so far have covered a wide, yet discontinuous electromagnetic spectral range from semimetallic graphene, insulating boron nitride, to semiconductors with bandgaps from middle infrared to visible light. Here, we introduce new layered semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into long-wavelength infrared (LWIR) regime and cannot be readily reached by other layered materials. Moreover, polarization-resolved infrared absorption and Raman studies reveal in-plane anisotropic properties of b-AsP. This family of layered b-AsP materials extend the electromagnetic spectra covered by 2D layered materials to the LWIR regime, and may find unique applications for future all 2D layered material based devices.

preprint2015arXiv

Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide

Recently, two-dimensional (2D) materials with strong in-plane anisotropic properties such as black phosphorus have demonstrated great potential for developing new devices that can take advantage of its reduced lattice symmetry with potential applications in electronics, optoelectronics and thermoelectrics. However, the selection of 2D material with strong in-plane anisotropy has so far been very limited and only sporadic studies have been devoted to transition metal dichalcogenides (TMDC) materials with reduced lattice symmetry, which is yet to convey the full picture of their optical and phonon properties, and the anisotropy in their interlayer interactions. Here, we study the anisotropic interlayer interactions in an important TMDC 2D material with reduced in-plane symmetry - atomically thin rhenium diselenide (ReSe2) - by investigating its ultralow frequency interlayer phonon vibration modes, the layer dependent optical bandgap, and the anisotropic photoluminescence (PL) spectra for the first time. The ultralow frequency interlayer Raman spectra combined with the first study of polarization-resolved high frequency Raman spectra in mono- and bi-layer ReSe2 allows deterministic identification of its layer number and crystal orientation. PL measurements show anisotropic optical emission intensity with bandgap increasing from 1.26 eV in the bulk to 1.32 eV in monolayer, consistent with the theoretical results based on first-principle calculations. The study of the layer-number dependence of the Raman modes and the PL spectra reveals the relatively weak van der Waals interaction and 2D quantum confinement in atomically-thin ReSe2.