BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Qing-Rong Zheng

Qing-Rong Zheng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elchao-dyncond-mat.stat-mechnlin.CDphysics.comp-ph

Catalog footprint

What is connected

13works
7topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

13 published item(s)

preprint2020arXiv

Tinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility

By means of extensive ab initio calculations, a new two-dimensional (2D) atomic material tin selenide monolayer (coined as tinselenidene) is predicted to be a semiconductor with an indirect gap (1.45 eV) and a high hole mobility (of order 10000 cm2V-1S-1), and will bear an indirect-direct gap transition under a rather low strain (<0.5 GPa). Tinselenidene has a very small Young's modulus (20-40 GPa) and an ultralow lattice thermal conductivity (<3 Wm-1K-1 at 300 K), making it probably the most flexible and most heat-insulating material in known 2D atomic materials. In addition, tinseleniden has a large negative Poisson's ratio of -0.17, thus could act as a 2D auxetic material. With these intriguing properties, tinselenidene could have wide potential applications in thermoelectrics, nanomechanics and optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Layer dependence of geometric, electronic and piezoelectric properties of SnSe

By means of first-principles calculations, we explore systematically the geometric, electronic and piezoelectric properties of multilayer SnSe. We find that these properties are layer-dependent, indicating that the interlayer interaction plays an important role. With increasing the number of SnSe layers from 1 to 6, we observe that the lattice constant decreases from 4.27 $\mathring{A}$ to 4.22 $\mathring{A}$ along zigzag direction, and increases from 4.41 $\mathring{A}$ to 4.51 $\mathring{A}$ along armchair direction close to the bulk limit (4.21 $\mathring{A}$ and 4.52 $\mathring{A}$, respectively); the band gap decreases from 1.45 eV to 1.08 eV, approaching the bulk gap 0.95 eV. Although the monolayer SnSe exhibits almost symmetric geometric and electronic structures along zigzag and armchair directions, bulk SnSe is obviously anisotropic, showing that the stacking of layers enhances the anisotropic character of SnSe. As bulk and even-layer SnSe have inversion centers, they cannot exhibit piezoelectric responses. However, we show that the odd-layer SnSe have piezoelectric coefficients much higher than those of the known piezoelectric materials, suggesting that the odd-layer SnSe is a good piezoelectric material.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Phase diagram and exotic spin-spin correlations of anisotropic Ising model on the Sierpiński gasket

The anisotropic antiferromagnetic Ising model on the fractal Sierpiński gasket is intensively studied, and a number of exotic properties are disclosed. The ground state phase diagram in the plane of magnetic field-interaction of the system is obtained. The thermodynamic properties of the three plateau phases are probed by exploring the temperature-dependence of magnetization, specific heat, susceptibility and spin-spin correlations. No phase transitions are observed in this model. In the absence of a magnetic field, the unusual temperature dependence of the spin correlation length is obtained with $0 \leq$J$_b/$J$_a<1$, and an interesting crossover behavior between different phases at J$_b/$J$_a=1$ is unveiled, whose dynamics can be described by the J$_b/$J$_a$-dependence of the specific heat, susceptibility and spin correlation functions. The exotic spin-spin correlation patterns that share the same special rotational symmetry as that of the Sierpiński gasket are obtained in both the $1/3$ plateau disordered phase and the $5/9$ plateau partially ordered ferrimagnetic phase. Moreover, a quantum scheme is formulated to study the thermodynamics of the fractal Sierpiński gasket with Heisenberg interactions. We find that the unusual temperature dependence of the correlation length remains intact in a small quantum fluctuation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance

We systematically investigated the geometric, electronic and thermoelectric (TE) properties of bulk black phosphorus (BP) under strain. The hinge-like structure of BP brings unusual mechanical responses such as anisotropic Young's modulus and negative Poisson's ratio. A sensitive electronic structure of BP makes it transform among metal, direct and indirect semiconductors under strain. The maximal figure of merit $ZT$ of BP is found to be 0.72 at $800\,\mathrm{K}$ that could be enhanced to 0.87 by exerting an appropriate strain, revealing BP could be a potential medium-high temperature TE material. Such strain-induced enhancements of TE performance are often observed to occur at the boundary of the direct-indirect band gap transition, which can be attributed to the increase of degeneracy of energy valleys at the transition point. By comparing the structure of BP with SnSe, a family of potential TE materials with hinge-like structure are suggested. This study not only exposes various novel properties of BP under strain, but also proposes effective strategies to seek for better TE materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic and magnetic properties of twisted graphene nanoribbon and Möbius strips: first-principles calculations

The geometrical, electronic, and magnetic properties of twisted zigzag-edged graphene nanoribbons (ZGNRs) and novel graphene Möbius strips (GMS) are systematically investigated using first-principles density functional calculations. The structures of ZGNRs and GMS are optimized, and their stabilities are examined. The molecular energy levels and the spin polarized density of states are calculated. It is found that for twisted ZGNRs, the atomic bonding energy decreases quadratically with the increase of the twisted angle, and the HOMO-LUMO gap are varying in a sine-like behavior with the twisted angle. The calculated spin densities reveal that the ZGNRs and GMS have antiferromagnetic ground states, which persist during the twisting. The spin flips on the zigzag edges of GMS are observed at some positions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Superstructures of Cubic and Hexagonal Diamonds Comprising a Family of Novel $sp^3$ Superhard Carbon Allotropes

Superstructures of cubic and hexagonal diamonds (h- and c-diamond) comprising a family of stable diamond-like $sp^3$ hybridized novel carbon allotropes are proposed, which are referred to as U$_n$-carbon where $n \geq 2$ denotes the number of structural layers in a unit cell. The conventional h- and c-diamond are included in this family as members with $n=2$ and 3, respectively. U$_n$-carbon ($n=4-6$), which are unveiled energetically and thermodynamically more stable than h-diamond and possess remarkable kinetic stabilities, are shown to be insulators with indirect gaps of $5.6 \sim 5.8$ eV, densities of $ 3.5 \sim 3.6$ g/cm$^3$, bulk modulus of $4.3 \sim 4.4 \times 10^{2}$ GPa, and Vickers hardness of $92.9 \sim 97.5$ GPa even harder than h- and c-diamond. The simulated x-ray diffraction and Raman spectra are presented for experimental characterization. These new structures of carbon would have a compelling impact in physics, chemistry, materials science and geophysics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Charged States and Band-Gap Narrowing in Codoped ZnO Nanowires for Enhanced Photoelectrochemical Responses

By means of first-principles calculations within the density functional theory, we study the structural and optical properties of codoped ZnO nanowires and compare them with those of the bulk and film. It is disclosed that the low negatively charged ground states of nitrogen related defects play a key role in the optical absorption spectrum tail that narrows the band-gap and enhances the photoelectrochemical response significantly. A strategy of uncompensated N, P and Ga codoping in ZnO nanowires is proposed to produce a red-shift of the optical absorption spectra further than the exclusive N doping and to get a proper formation energy with a high defect concentration and a suppressed recombination rate. In this way, the absorption of the visible light can be improved and the photocurrent can be raised. These observations are consistent with the existing experiments, which will be helpful to improve the photoelectrochemical responses for the wide-band-gap semiconductors especially in water splitting applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Octagraphene as a Versatile Carbon Atomic Sheet for Novel Nanotubes, Unconventional Fullerenes and Hydrogen Storage

We study a versatile structurally favorable periodic $sp^2$-bonded carbon atomic planar sheet with $C_{4v}$ symmetry by means of the first-principles calculations. This carbon allotrope is composed of carbon octagons and squares with two bond lengths and is thus dubbed as octagraphene. It is a semimetal with the Fermi surface consisting of one hole and one electron pocket, whose low-energy physics can be well described by a tight-binding model of $π$-electrons. Its Young's modulus, breaking strength and Poisson's ratio are obtained to be 306 $N/m$, 34.4 $N/m$ and 0.13, respectively, which are close to those of graphene. The novel sawtooth and armchair carbon nanotubes as well as unconventional fullerenes can also be constructed from octagraphene. It is found that the Ti-absorbed octagraphene can be allowed for hydrogen storage with capacity around 7.76 wt%.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermoelectric Properties of Silicon Carbide Nanowires with Nitrogen Dopants and Vacancies

The thermoelectric properties of cubic zincblend silicon carbide nanowires (SiCNWs) with nitrogen impurities and vacancies along [111] direction are theoretically studied by means of atomistic simulations. It is found that the thermoelectric figure of merit ZT of SiCNWs can be significantly enhanced by doping N impurities together with making Si vacancies. Aiming at obtaining a large ZT, we study possible energetically stable configurations, and disclose that, when N dopants locate at the center, a small number of Si vacancies at corners are most favored for n-type nanowires, while a large number of Si vacancies spreading into the flat edge sites are most favored for p-type nanowires. For the SiCNW with a diameter of 1.1 nm and a length of 4.6 nm, the ZT value for the n-type is shown capable of reaching 1.78 at 900K. The conditions to get higher ZT values for longer SiCNWs are also addressed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

T-Carbon: A Novel Carbon Allotrope

A structurally stable crystalline carbon allotrope is predicted by means of the first-principles calculations. This allotrope can be derived by substituting each atom in diamond with a carbon tetrahedron, and possesses the same space group Fd^1 3m as diamond, which is thus coined as T- carbon. The calculations on geometrical, vibrational and electronic properties reveal that T-carbon, with a considerable structural stability and a much lower density 1.50 g/cm3, is a semiconductor with a direct band gap about 3.0 eV, and has a Vickers hardness 61.1 GPa lower than diamond but comparable with cubic boron nitride. Such a form of carbon, once obtained, would have wide applications in photocatalysis, adsoption, hydrogen storage and aerospace materials.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin transfer in a ferromagnet-quantum dot and tunnel barrier coupled Aharonov-Bohm ring system with Rashba spin-orbit interactions

The spin transfer effect in ferromagnet-quantum dot (insulator)-ferromagnet Aharonov-Bohm (AB) ring system with Rashba spin-orbit (SO) interactions is investigated by means of Keldysh nonequilibrium Green function method. It is found that both the magnitude and direction of the spin transfer torque (STT) acting on the right ferromagnet electrode can be effectively controlled by changing the magnetic flux threading the AB ring or the gate voltage on the quantum dot. The STT can be greatly augmented by matching a proper magnetic flux and an SO interaction at a cost of low electrical current. The STT, electrical current, and spin current are uncovered to oscillate with the magnetic flux. The present results are expected to be useful for information storage in nanospintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

Effect of Spin-Flip Scattering on Electrical Transport in Magnetic Tunnel Junctions

By means of the nonequilibrium Green function technique, the effect of spin-flip scatterings on the spin-dependent electrical transport in ferromagnet-insulator-ferromagnet (FM-I-FM) tunnel junctions is investigated. It is shown that Julliere's formula for the tunnel conductance must be modified when including the contribution from the spin-flip scatterings. It is found that the spin-flip scatterings could lead to an angular shift of the tunnel conductance, giving rise to the junction resistance not being the largest when the orientations of magnetizations in the two FM electrodes are antiparallel, which may offer an alternative explanation for such a phenomenon observed previously in experiments in some FM-I-FM junctions. The spin-flip assisted tunneling is also observed.

0 citations0 reviewsNo code linkedOpen access
preprint1995arXiv

Classical and Quantum Chaotic Behaviors of Two Colliding Harmonic Oscillators

We have systematically studied both classical and quantum chaotic behaviors of two colliding harmonic oscillators. The classical case falls in Kolmogorov-Arnold-Moser class. It is shown that there exists an energy threshold, above which the system becomes nonintegrable. For some values of the initial energy near the threshold, we have found that the ratio of frequencies of the two oscillators affects the Poincaré sections significantly. The largest Lyapunov character exponent depends linearly on the ratio of frequencies of the two oscillators away from the energy threshold in some chaotic regions, which shows that the chaotic behaviors of the system are mainly determined by the ratio. In the quantum case, for certain parameters, the distribution of the energy level spacings also varies with the ratio of frequencies of the two oscillators. The relation between the energy spectra and the ratio of frequencies of the two oscillators, the interaction constant, and the semi-classical quantization constant, is also investigated respectively.

0 citations0 reviewsNo code linkedOpen access