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Qing-Bo Yan

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Published work

14 published item(s)

preprint2024arXiv

Magnon Damping Minimum and Logarithmic Scaling in a Kondo-Heisenberg Model

Recently, an anomalous temperature evolution of spin wave excitations has been observed in a van der Waals metallic ferromagnet Fe$_3$GeTe$_2$ (FGT) [S. Bao, et al., Phys. Rev. X 12, 011022 (2022)], whose theoretical understanding yet remains elusive. Here we study the spin dynamics of a ferromagnetic Kondo-Heisenberg lattice model at finite temperature, and propose a mechanism of magnon damping that explains the intriguing experimental results. In particular, we find the magnon damping rate $γ(T)$ firstly decreases as temperature lowers, due to the reduced magnon-magnon scatterings. It then reaches a minimum at $T_{\rm d}^*$, and rises up again following a logarithmic scaling $γ(T) \sim \ln{(T_0/T)}$ (with $T_0$ a constant) for $T < T_{\rm d}^*$, which can be attributed to electron-magnon scatterings of spin-flip type. Moreover, we obtain the phase diagram containing the ferromagnetic and Kondo insulator phases by varying the Kondo coupling, which may be relevant for experiments on pressured FGT. The presence of a magnon damping minimum and logarithmic scaling at low temperature indicates the emergence of the Kondo effect reflected in the collective excitations of local moments in a Kondo lattice system.

preprint2020arXiv

Large Family of Two-Dimensional Ferroelectric Metals Discovered via Machine Learning

Ferroelectricity and metallicity are usually believed not to coexist because conducting electrons would screen out static internal electric fields. In 1965, Anderson and Blount proposed the concept of 'ferroelectric metal', however, it is only until recently that very rare ferroelectric metals were reported. Here, by combining high-throughput ab initio calculations and data-driven machine learning method with new electronic orbital based descriptors, we systematically investigated a large family (2,964) of two-dimensional (2D) bimetal phosphates, and discovered 60 stable ferroelectrics with out-of-plane polarization, including 16 ferroelectric metals and 44 ferroelectric semiconductors that contain seven multiferroics. The ferroelectricity origins from spontaneous symmetry breaking induced by the opposite displacements of bimetal atoms, and the full-d-orbital coinage metal elements cause larger displacements and polarization than other elements. For 2D ferroelectric metals, the odd electrons per unit cell without spin polarization may lead to a half-filled energy band around Fermi level and is responsible for the metallicity. It is revealed that the conducting electrons mainly move on a single-side surface of the 2D layer, while both the ionic and electric contributions to polarization come from the other side and are vertical to the above layer, thereby causing the coexistence of metallicity and ferroelectricity. Van der Waals heterostructures based on ferroelectric metals may enable the change of Schottky barrier height or the Schottky-Ohmic contact type and induce a dramatic change of their vertical transport properties. Our work greatly expands the family of 2D ferroelectric metals and will spur further exploration of 2D ferroelectric metals.

preprint2020arXiv

Tinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility

By means of extensive ab initio calculations, a new two-dimensional (2D) atomic material tin selenide monolayer (coined as tinselenidene) is predicted to be a semiconductor with an indirect gap (1.45 eV) and a high hole mobility (of order 10000 cm2V-1S-1), and will bear an indirect-direct gap transition under a rather low strain (<0.5 GPa). Tinselenidene has a very small Young's modulus (20-40 GPa) and an ultralow lattice thermal conductivity (<3 Wm-1K-1 at 300 K), making it probably the most flexible and most heat-insulating material in known 2D atomic materials. In addition, tinseleniden has a large negative Poisson's ratio of -0.17, thus could act as a 2D auxetic material. With these intriguing properties, tinselenidene could have wide potential applications in thermoelectrics, nanomechanics and optoelectronics.

preprint2020arXiv

Toward understanding physical origin of 2175Å extinction bump in interstellar medium

The 2175 Å ultraviolet (UV) extinction bump in interstellar medium (ISM) of the Milky Way was discovered in 1965. After intensive exploration of more than a half century, however, its exact origin still remains a big conundrum that is being debated. Here we propose a mixture model by which the extinction bump in ISM is argued possibly relevant to the clusters of hydrogenated T-carbon (HTC) molecules (C40H16) that have intrinsically a sharp absorption peak at the wavelength 2175 Å. By linearly combining the calculated absorption spectra of HTC mixtures, graphite, MgSiO3 and Fe2SiO4, we show that the UV extinction curves of optional six stars can be nicely fitted. This present work poses an alternative explanation toward understanding the physical origin of the 2175 Å extinction bump in ISM of the Milky Way.

preprint2019arXiv

Accelerated Discovery of Two-Dimensional Optoelectronic Octahedral Oxyhalides via High-Throughput Ab Initio Calculations and Machine Learning

Traditional trial-and-error methods are obstacles for large-scale searching of new optoelectronic materials. Here, we introduce a method combining high-throughput ab initio calculations and machine-learning approaches to predict two-dimensional octahedral oxyhalides with improved optoelectronic properties. We develop an effective machine-learning model based on an expansive dataset generated from density functional calculations including the geometric and electronic properties of 300 two-dimensional octahedral oxyhalides. Our model accelerates the screening of potential optoelectronic materials of 5,000 two-dimensional octahedral oxyhalides. The distorted stacked octahedral factors proposed in our model play essential roles in the machine-learning prediction. Several potential two-dimensional optoelectronic octahedral oxyhalides with moderate band gaps, high electron mobilities, and ultrahigh absorbance coefficients are successfully hypothesized.

preprint2016arXiv

Diverse anisotropy of phonon transport in two-dimensional IV-VI compounds: A comparative study

New classes two-dimensional (2D) materials beyond graphene, including layered and non-layered, and their heterostructures, are currently attracting increasing interest due to their promising applications in nanoelectronics, optoelectronics and clean energy, where thermal transport property is one of the fundamental physical parameters. In this paper, we systematically investigated the phonon transport properties of 2D orthorhombic group IV-VI compounds of $GeS$, $GeSe$, $SnS$ and $SnSe$ by solving the Boltzmann transport equation (BTE) based on first-principles calculations. Despite the similar puckered (hinge-like) structure along the armchair direction as phosphorene, the four monolayer compounds possess diverse anisotropic properties in many aspects, such as phonon group velocity, Young's modulus and lattice thermal conductivity ($κ$), etc. Especially, the $κ$ along the zigzag and armchair directions of monolayer $GeS$ shows the strongest anisotropy while monolayer $SnS$ and $SnSe$ shows an almost isotropy in phonon transport. The origin of the diverse anisotropy is fully studied and the underlying mechanism is discussed in detail. With limited size, the $κ$ could be effectively lowered, and the anisotropy could be effectively modulated by nanostructuring, which would extend the applications in nanoscale thermoelectrics and thermal management. Our study offers fundamental understanding of the anisotropic phonon transport properties of 2D materials, and would be of significance for further study, modulation and aplications in emerging technologies.

preprint2016arXiv

Layer dependence of geometric, electronic and piezoelectric properties of SnSe

By means of first-principles calculations, we explore systematically the geometric, electronic and piezoelectric properties of multilayer SnSe. We find that these properties are layer-dependent, indicating that the interlayer interaction plays an important role. With increasing the number of SnSe layers from 1 to 6, we observe that the lattice constant decreases from 4.27 $\mathring{A}$ to 4.22 $\mathring{A}$ along zigzag direction, and increases from 4.41 $\mathring{A}$ to 4.51 $\mathring{A}$ along armchair direction close to the bulk limit (4.21 $\mathring{A}$ and 4.52 $\mathring{A}$, respectively); the band gap decreases from 1.45 eV to 1.08 eV, approaching the bulk gap 0.95 eV. Although the monolayer SnSe exhibits almost symmetric geometric and electronic structures along zigzag and armchair directions, bulk SnSe is obviously anisotropic, showing that the stacking of layers enhances the anisotropic character of SnSe. As bulk and even-layer SnSe have inversion centers, they cannot exhibit piezoelectric responses. However, we show that the odd-layer SnSe have piezoelectric coefficients much higher than those of the known piezoelectric materials, suggesting that the odd-layer SnSe is a good piezoelectric material.

preprint2015arXiv

Anisotropic intrinsic lattice thermal conductivity of phosphorene from first principles

Phosphorene, the single layer counterpart of black phosphorus, is a novel two-dimensional semiconductor with high carrier mobility and a large fundamental direct band gap, which has attracted tremendous interest recently. Its potential applications in nano-electronics and thermoelectrics call for a fundamental study of the phonon transport. Here, we calculate the intrinsic lattice thermal conductivity of phosphorene by solving the phonon Boltzmann transport equation (BTE) based on first-principles calculations. The thermal conductivity of phosphorene at $300\,\mathrm{K}$ is $30.15\,\mathrm{Wm^{-1}K^{-1}}$ (zigzag) and $13.65\,\mathrm{Wm^{-1}K^{-1}}$ (armchair), showing an obvious anisotropy along different directions. The calculated thermal conductivity fits perfectly to the inverse relation with temperature when the temperature is higher than Debye temperature ($Θ_D = 278.66\,\mathrm{K}$). In comparison to graphene, the minor contribution around $5\%$ of the ZA mode is responsible for the low thermal conductivity of phosphorene. In addition, the representative mean free path (MFP), a critical size for phonon transport, is also obtained.

preprint2015arXiv

Highly efficient light management for perovskite solar cells

Organic-inorganic halide perovskite solar cells have enormous potential to impact the existing photovoltaic industry. As realizing a higher conversion efficiency of the solar cell is still the most crucial task, a great number of schemes were proposed to minimize the carrier loss by optimizing the electrical properties of the perovskite solar cells. Here, we focus on another significant aspect that is to minimize the light loss by optimizing the light management to gain a high efficiency for perovskite solar cells. In our scheme, the slotted and inverted prism structured SiO2 layers are adopted to trap more light into the solar cells, and a better transparent conducting oxide layer is employed to reduce the parasitic absorption. For such an implementation, the efficiency and the serviceable angle of the perovskite solar cell can be promoted impressively. This proposal would shed new light on developing the high-performance perovskite solar cells.

preprint2014arXiv

Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance

We systematically investigated the geometric, electronic and thermoelectric (TE) properties of bulk black phosphorus (BP) under strain. The hinge-like structure of BP brings unusual mechanical responses such as anisotropic Young's modulus and negative Poisson's ratio. A sensitive electronic structure of BP makes it transform among metal, direct and indirect semiconductors under strain. The maximal figure of merit $ZT$ of BP is found to be 0.72 at $800\,\mathrm{K}$ that could be enhanced to 0.87 by exerting an appropriate strain, revealing BP could be a potential medium-high temperature TE material. Such strain-induced enhancements of TE performance are often observed to occur at the boundary of the direct-indirect band gap transition, which can be attributed to the increase of degeneracy of energy valleys at the transition point. By comparing the structure of BP with SnSe, a family of potential TE materials with hinge-like structure are suggested. This study not only exposes various novel properties of BP under strain, but also proposes effective strategies to seek for better TE materials.

preprint2013arXiv

Electronic and magnetic properties of twisted graphene nanoribbon and Möbius strips: first-principles calculations

The geometrical, electronic, and magnetic properties of twisted zigzag-edged graphene nanoribbons (ZGNRs) and novel graphene Möbius strips (GMS) are systematically investigated using first-principles density functional calculations. The structures of ZGNRs and GMS are optimized, and their stabilities are examined. The molecular energy levels and the spin polarized density of states are calculated. It is found that for twisted ZGNRs, the atomic bonding energy decreases quadratically with the increase of the twisted angle, and the HOMO-LUMO gap are varying in a sine-like behavior with the twisted angle. The calculated spin densities reveal that the ZGNRs and GMS have antiferromagnetic ground states, which persist during the twisting. The spin flips on the zigzag edges of GMS are observed at some positions.

preprint2013arXiv

Superstructures of Cubic and Hexagonal Diamonds Comprising a Family of Novel $sp^3$ Superhard Carbon Allotropes

Superstructures of cubic and hexagonal diamonds (h- and c-diamond) comprising a family of stable diamond-like $sp^3$ hybridized novel carbon allotropes are proposed, which are referred to as U$_n$-carbon where $n \geq 2$ denotes the number of structural layers in a unit cell. The conventional h- and c-diamond are included in this family as members with $n=2$ and 3, respectively. U$_n$-carbon ($n=4-6$), which are unveiled energetically and thermodynamically more stable than h-diamond and possess remarkable kinetic stabilities, are shown to be insulators with indirect gaps of $5.6 \sim 5.8$ eV, densities of $ 3.5 \sim 3.6$ g/cm$^3$, bulk modulus of $4.3 \sim 4.4 \times 10^{2}$ GPa, and Vickers hardness of $92.9 \sim 97.5$ GPa even harder than h- and c-diamond. The simulated x-ray diffraction and Raman spectra are presented for experimental characterization. These new structures of carbon would have a compelling impact in physics, chemistry, materials science and geophysics.

preprint2012arXiv

Octagraphene as a Versatile Carbon Atomic Sheet for Novel Nanotubes, Unconventional Fullerenes and Hydrogen Storage

We study a versatile structurally favorable periodic $sp^2$-bonded carbon atomic planar sheet with $C_{4v}$ symmetry by means of the first-principles calculations. This carbon allotrope is composed of carbon octagons and squares with two bond lengths and is thus dubbed as octagraphene. It is a semimetal with the Fermi surface consisting of one hole and one electron pocket, whose low-energy physics can be well described by a tight-binding model of $π$-electrons. Its Young's modulus, breaking strength and Poisson's ratio are obtained to be 306 $N/m$, 34.4 $N/m$ and 0.13, respectively, which are close to those of graphene. The novel sawtooth and armchair carbon nanotubes as well as unconventional fullerenes can also be constructed from octagraphene. It is found that the Ti-absorbed octagraphene can be allowed for hydrogen storage with capacity around 7.76 wt%.

preprint2011arXiv

T-Carbon: A Novel Carbon Allotrope

A structurally stable crystalline carbon allotrope is predicted by means of the first-principles calculations. This allotrope can be derived by substituting each atom in diamond with a carbon tetrahedron, and possesses the same space group Fd^1 3m as diamond, which is thus coined as T- carbon. The calculations on geometrical, vibrational and electronic properties reveal that T-carbon, with a considerable structural stability and a much lower density 1.50 g/cm3, is a semiconductor with a direct band gap about 3.0 eV, and has a Vickers hardness 61.1 GPa lower than diamond but comparable with cubic boron nitride. Such a form of carbon, once obtained, would have wide applications in photocatalysis, adsoption, hydrogen storage and aerospace materials.