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Source author record

Qihua Xiong

Qihua Xiong appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.opticscond-mat.mes-hallcond-mat.str-elquant-ph

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Published work

13 published item(s)

preprint2022arXiv

Layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr

Magnetic van der Waals (vdW) materials offer a fantastic platform to investigate and exploit rich spin configurations stabilized in reduced dimensions. One tantalizing magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. We reveal a pronounced odd-even layer effect of interlayer reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. Our work uncovers the layer-dependent interlayer antiferromagnetic reorientation engineered by magnetic field in the air-stable semiconductor, which could contribute to future vdW spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Unveiling the Enhancement of Spontaneous Emission at Exceptional Points

Exceptional points (EPs), singularities of non-Hermitian physics where complex spectral resonances degenerate, are one of the most exotic features of nonequilibrium open systems with unique properties. For instance, the emission rate of quantum emitters placed near resonators with EPs is enhanced (compared to the free-space emission rate) by a factor that scales quadratically with the resonance quality factor. Here, we verify the theory of spontaneous emission at EPs by measuring photoluminescence from photonic-crystal slabs that are embedded with a high-quantum-yield active material. While our experimental results verify the theoretically predicted enhancement, it also highlights the practical limitations on the enhancement due to material loss. Our designed structures can be used in applications that require enhanced and controlled emission, such as quantum sensing and imaging.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Enhanced Valley Zeeman Splitting in Fe-Doped Monolayer MoS2

The Zeeman effect offers unique opportunities for magnetic manipulation of the spin degree of freedom (DOF). Recently, valley Zeeman splitting, referring to the lifting of valley degeneracy, has been demonstrated in two-dimensional transition metal dichalcogenides (TMDs) at liquid helium temperature. However, to realize the practical applications of valley pseudospins, the valley DOF must be controllable by a magnetic field at room temperature, which remains a significant challenge. Magnetic doping in TMDs can enhance the Zeeman splitting, however, to achieve this experimentally is not easy. Here, we report unambiguous magnetic manipulation of valley Zeeman splitting at 300 K (g = -6.4) and 10 K (g = -11) in a CVD-grown Fe-doped MoS2 monolayer; the effective g factor can be tuned to -20.7 by increasing the Fe dopant concentration, which represents an approximately fivefold enhancement as compared to undoped MoS2. Our measurements and calculations reveal that the enhanced splitting and geff factors are due to the Heisenberg exchange interaction of the localized magnetic moments (Fe 3d electrons) with MoS2 through the d-orbital hybridization.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Observation of forbidden phonons and dark excitons by resonance Raman scattering in few-layer WS$_2$

The optical properties of the two-dimensional (2D) crystals are dominated by tightly bound electron-hole pairs (excitons) and lattice vibration modes (phonons). The exciton-phonon interaction is fundamentally important to understand the optical properties of 2D materials and thus help develop emerging 2D crystal based optoelectronic devices. Here, we presented the excitonic resonant Raman scattering (RRS) spectra of few-layer WS$_2$ excited by 11 lasers lines covered all of A, B and C exciton transition energies at different sample temperatures from 4 to 300 K. As a result, we are not only able to probe the forbidden phonon modes unobserved in ordinary Raman scattering, but also can determine the bright and dark state fine structures of 1s A exciton. In particular, we also observed the quantum interference between low-energy discrete phonon and exciton continuum under resonant excitation. Our works pave a way to understand the exciton-phonon coupling and many-body effects in 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Broadband tunable hybrid photonic crystal-nanowire light emitter

We integrate about 100 single Cadmium Selenide semiconductor nanowires in self-standing Silicon Nitride photonic crystal cavities in a single processing run. Room temperature measurements reveal a single narrow emission linewidth, corresponding to a Q-factor as large as 5000. By varying the structural parameters of the photonic crystal, the peak wavelength is tuned, thereby covering the entire emission spectral range of the active material. A very large spectral range could be covered by heterogeneous integration of different active materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Large Frequency Change with Thickness in Interlayer Breathing Mode - Significant Interlayer Interactions in Few Layer Black Phosphorus

Bulk black phosphorus (BP) consists of puckered layers of phosphorus atoms. Few-layer BP, obtained from bulk BP by exfoliation, is an emerging candidate as a channel material in post-silicon electronics. A deep understanding of its physical properties and its full range of applications are still being uncovered. In this paper, we present a theoretical and experimental investigation of phonon properties in few-layer BP, focusing on the low-frequency regime corresponding to interlayer vibrational modes. We show that the interlayer breathing mode A3g shows a large redshift with increasing thickness; the experimental and theoretical results agreeing well. This thickness dependence is two times larger than that in the chalcogenide materials such as few-layer MoS2 and WSe2, because of the significantly larger interlayer force constant and smaller atomic mass in BP. The derived interlayer out-of-plane force constant is about 50% larger than that in graphene and MoS2. We show that this large interlayer force constant arises from the sizable covalent interaction between phosphorus atoms in adjacent layers, and that interlayer interactions are not merely of the weak van der Waals type. These significant interlayer interactions are consistent with the known surface reactivity of BP, and have been shown to be important for electric-field induced formation of Dirac cones in thin film BP.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials - A general bond polarizability model

2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than the intralayer bonds, allowing the as-synthesized materials to exhibit different stacking sequences (e.g. ABAB, ABCABC), leading to different physical properties. Here, we show that regardless of the space group of the 2D material, the Raman frequencies of the interlayer shear modes observed under the typical configuration blue shift for AB stacked materials, and red shift for ABC stacked materials, as the number of layers increases. Our predictions are made using an intuitive bond polarizability model which shows that stacking sequence plays a key role in determining which interlayer shear modes lead to the largest change in polarizability (Raman intensity); the modes with the largest Raman intensity determining the frequency trends. We present direct evidence for these conclusions by studying the Raman modes in few layer graphene, MoS2, MoSe2, WSe2 and Bi2Se3, using both first principles calculations and Raman spectroscopy. This study sheds light on the influence of stacking sequence on the Raman intensities of intrinsic interlayer modes in 2D layered materials in general, and leads to a practical way of identifying the stacking sequence in these materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Effects of Lower Symmetry and Dimensionality on Raman Spectra in 2D WSe2

We report the observation and interpretation of new Raman peaks in few-layer tungsten diselenide (WSe2), induced by the reduction of symmetry going from 3D to 2D. In general, Raman frequencies in 2D materials follow quite closely the frequencies of corresponding eigenmodes in the bulk. However, while the modes that are Raman active in the bulk are also Raman active in the thin films, the reverse is not always true due to the reduced symmetry in thin films. Here, we predict from group theory and density functional calculations that two intra-layer vibrational modes which are Raman inactive in bulk WSe2 in our experimental configuration become Raman active in thin film WSe2, due to reduced symmetry in thin films. This phenomenon explains the Raman peaks we observe experimentally at ~310 cm-1 and 176 cm-1 in thin film WSe2. Interestingly, the bulk mode at ~310 cm-1 that is Raman inactive can in fact be detected in Raman measurements under specific wavelengths of irradiation, suggesting that in this case, crystal symmetry selection rules may be broken due to resonant scattering. Both theory and experiment indicate that the and modes blue-shift with decreasing thickness, which we attribute to surface effects. Our results shed light on a general understanding of the Raman/IR activities of the phonon modes in layered transition metal dichalcogenide materials and their evolution behavior from 3D to 2D.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anomalous Frequency Trends in MoS2 Thin Films Attributed to Surface Effects

The layered dichalcogenide MoS2 has many unique physical properties in low dimensions. Recent experimental Raman spectroscopies report an anomalous blue shift of the in-plane E2g1 mode with decreasing thickness, a trend that is not understood. Here, we combine experimental Raman scattering and theoretical studies to clarify and explain this trend. Special attention is given to understanding the surface effect on Raman frequencies by using a force constants model based on first-principles calculations. Surface effects refer to the larger Mo-S force constants at the surface of thin film MoS2, which results from a loss of neighbours in adjacent MoS2 layers. Without surface effects, the frequencies of both out-of-plane A1g and in-plane E2g1 modes decrease with decreasing thickness. However, the E2g1 mode blue shifts while the A1g mode red shifts once the surface effect is included, in agreement with the experiment. Our results show that competition between the thickness effect and the surface effect determines the mechanical properties of two-dimensional MoS2, which we believe applies to other layered materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have recently attracted tremendous interest as potential valleytronic and nano-electronic materials, in addition to being well-known as excellent lubricants in the bulk. The interlayer van der Waals (vdW) coupling and low frequency phonon modes, and how they evolve with the number of layers, are important for both the mechanical and electrical properties of 2D TMDs. Here we uncover the ultra-low frequency interlayer breathing and shear modes in few-layer MoS2 and WSe2, prototypical layered TMDs, using both Raman spectroscopy and first principles calculations. Remarkably, the frequencies of these modes can be perfectly described using a simple linear chain model with only nearest-neighbour interactions. We show that the derived in-plane (shear) and out-of-plane (breathing) force constants from experiment remain the same from two-layer 2D crystals to the bulk materials, suggesting that the nanoscale interlayer frictional characteristics of these excellent lubricants should be independent of the number of layers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy

The physical and electronic properties of ultrathin two-dimensional (2D) layered nanomaterials are highly related to their thickness. Therefore, the rapid and accurate identification of single- and few- to multi-layer nanosheets is essential to their fundamental study and practical applications. Here, a universal optical method has been developed for simple, rapid and reliable identification of single- to quindecuple-layer (1L-15L) 2D nanosheets, including graphene, MoS2, WSe2 and TaS2, on Si substrates coated with 90 nm or 300 nm SiO2. The optical contrast differences between the substrates and 2D nanosheets with different layer numbers were collected and tabulated, serving as a standard reference, from which the layer number of a given nanosheet can be readily and reliably determined without using complex calculation nor expensive instrument. Our general optical identification method will facilitate the thickness-dependent study of various 2D nanomaterials, and expedite their research toward practical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tailoring Plasmonic Metamaterials for DNA Molecular Logic Gates

Structural and functional information encoded in DNA combined with unique properties of nanomaterials could be of use for the construction of novel biocomputational circuits and intelligent biomedical nanodevices. However, at present their practical applications are still limited by either low reproducibility of fabrication, modest sensitivity, or complicated handling procedures. Here, we demonstrate the construction of label-free and switchable molecular logic gates that use specific conformation modulation of a guanine- and thymine- rich DNA, while the optical readout is enabled by the tunable alphabetical metamaterials, which serve as a substrate for surface enhanced Raman spectroscopy (MetaSERS). By computational and experimental investigations, we present a comprehensive solution to tailor the plasmonic responses of MetaSERS with respect to the metamaterial geometry, excitation energy, and polarization. Our tunable MetaSERS-based DNA logic is simple to operate, highly reproducible, and can be stimulated by ultra-low concentration of the external inputs, enabling an extremely sensitive detection of mercury ions.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Direct Observation of Inner and Outer G' Band Double-resonance Raman Scattering in Free Standing Graphene

In contrary to the widely reported single and symmetric peak feature of G' (or 2D) band in Raman spectrum of graphene, we herein report the observation of splitting in G' band in free standing graphene. Our experimental findings provide a direct and strong support for the previous theoretical prediction that the coexistence of the outer and inner processes in the doubleresonance Raman scattering would cause the splitting of G' mode. Our investigation of the influence of trigonal warping effect on the spectral features of G' subbands further verified the theoretical interpretation established on the anisotropic electronic structure of graphene.

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