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Researcher profile

Su Ying Quek

Su Ying Quek contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-ph

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Published work

5 published item(s)

preprint2022arXiv

Data-driven discovery of high performance layered van der Waals piezoelectric NbOI2

Using high-throughput first-principles calculations to search for layered van der Waals materials with the largest piezoelectric stress coefficients, we discover NbOI2 to be the one among 2940 monolayers screened. The piezoelectric performance of NbOI2 is independent of thickness, and its electromechanical coupling factor of near unity is a hallmark of optimal interconversion between electrical and mechanical energy. Laser scanning vibrometer studies on bulk and few-layer NbOI2 crystals verify their huge piezoelectric responses, which exceed internal references such as In2Se3 and CuInP2S6. Furthermore, we provide insights into the atomic origins of anti-correlated piezoelectric and ferroelectric responses in NbOX2 (X = Cl, Br, I), based on bond covalency and structural distortions in these materials. Our discovery that NbOI2 has the largest piezoelectric stress coefficients among 2D materials calls for the development of NbOI2-based flexible nanoscale piezoelectric devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dielectric Screening by 2D Substrates

Two-dimensional (2D) materials are increasingly being used as active components in nanoscale devices. Many interesting properties of 2D materials stem from the reduced and highly non-local electronic screening in two dimensions. While electronic screening within 2D materials has been studied extensively, the question still remains of how 2D substrates screen charge perturbations or electronic excitations adjacent to them. Thickness-dependent dielectric screening properties have recently been studied using electrostatic force microscopy (EFM) experiments. However, it was suggested that some of the thickness-dependent trends were due to extrinsic effects. Similarly, Kelvin probe measurements (KPM) indicate that charge fluctuations are reduced when BN slabs are placed on SiO$_2$, but it is unclear if this effect is due to intrinsic screening from BN. In this work, we use first principles calculations to study the fully non-local dielectric screening properties of 2D material substrates. Our simulations give results in good qualitative agreement with those from EFM experiments, for hexagonal boron nitride (BN), graphene and MoS$_2$, indicating that the experimentally observed thickness-dependent screening effects are intrinsic to the 2D materials. We further investigate explicitly the role of BN in lowering charge potential fluctuations arising from charge impurities on an underlying SiO$_2$ substrate, as observed in the KPM experiments. 2D material substrates can also dramatically change the HOMO-LUMO gaps of adsorbates, especially for small molecules, such as benzene. We propose a reliable and very quick method to predict the HOMO-LUMO gap of small physisorbed molecules on 2D and 3D substrates, using only the band gap of the substrate and the gas phase gap of the molecule.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Isolated Flat Bands and Physics of Mixed Dimensions in a 2D Covalent Organic Framework

We demonstrate that it is possible to rationally incorporate both an isolated flat band, and the physics of zero dimensions (0D), one dimension (1D), and two dimensions (2D) in a single 2D material. Such unique electronic properties are present in a recently synthesized 2D covalent organic framework (COF), where "I"-shaped building blocks and "T"-shaped connectors result in quasi-1D chains that are linked by quasi-0D bridge units arranged in a stable 2D lattice. The lowest unoccupied conduction band is an isolated flat band, and electron-doping gives rise to novel quantum phenomena, such as magnetism and Mott insulating phases. The highest occupied valence band arises from wave functions in the quasi-1D chains. Examples of mixed dimensional physics are illustrated in this system. The strong electron-hole asymmetry in this material results in a large Seebeck coefficient, while the quasi-1D nature of the chains leads to linear dichroism, in conjunction with strongly bound 2D excitons. We elucidate strategies to design and optimize 2D COFs to host both isolated flat bands and quantum-confined 1D subsystems. The properties of the 2D COF discussed here provide a taste of the intriguing possibilities in this open research field.

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preprint2020arXiv

Near Unity Molecular Doping Efficiency in Monolayer MoS2

Surface functionalization with organic electron donors (OEDs) is an effective doping strategy for two-dimensional (2D) materials, which can achieve doping levels beyond those possible with conventional electric field gating. While the effectiveness of surface functionalization has been demonstrated in many 2D systems, the doping efficiencies of OEDs have largely been unmeasured, which is in stark contrast to their precision syntheses and tailored redox potentials. Here, using monolayer MoS2 as a model system and an organic reductant based on 4,4-bipyridine (DMAP-OED) as a strong organic dopant, we establish that the doping efficiency of DMAP-OED to MoS2 is in the range of 0.63 to 1.26 electrons per molecule. We also achieve the highest doping level to date in monolayer MoS2 by surface functionalization and demonstrate that DMAP-OED is a stronger dopant than benzyl viologen, which was the previous best OED dopant. The measured range of the doping efficiency is in good agreement with the values predicted from first-principles calculations. Our work provides a basis for the rational design of OEDs for high-level doping of 2D materials.

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preprint2020arXiv

Valley Zeeman effect and Landau levels in Two-Dimensional Transition Metal Dichalcogenides

This paper presents a theoretical description of both the valley Zeeman effect (g-factors) and Landau levels in two-dimensional H-phase transition metal dichalcogenides (TMDs) using the Luttinger-Kohn approximation with spin-orbit coupling. At the valley extrema in TMDs, energy bands split into Landau levels with a Zeeman shift in the presence of a uniform out-of-plane external magnetic field. The Landau level indices are symmetric in the $K$ and $K'$ valleys. We develop a numerical approach to compute the single band g-factors from first principles without the need for a sum over unoccupied bands. Many-body effects are included perturbatively within the GW approximation. Non-local exchange and correlation self-energy effects in the GW calculations increase the magnitude of single band g-factors compared to those obtained from density functional theory. Our first principles results give spin- and valley-split Landau levels, in agreement with recent optical experiments. The exciton g-factors deduced in this work are also in good agreement with experiment for the bright and dark excitons in monolayer WSe$_2$, as well as the lowest-energy bright excitons in MoSe$_2$-WSe$_2$ heterobilayers with different twist angles.

0 citations0 reviewsNo code linkedOpen access