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Ping Wu

Ping Wu contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2026arXiv

C-VARC: A Large-Scale Chinese Value Rule Corpus for Value Alignment of Large Language Models

Ensuring that Large Language Models (LLMs) align with mainstream human values and ethical norms is crucial for the safe and sustainable development of AI. Current value evaluation and alignment are constrained by Western cultural bias and incomplete domestic frameworks reliant on non-native rules; furthermore, the lack of scalable, rule-driven scenario generation methods makes evaluations costly and inadequate across diverse cultural contexts. To address these challenges, we propose a hierarchical value framework grounded in core Chinese values, encompassing three main dimensions, 12 core values, and 50 derived values. Based on this framework, we construct a large-scale Chinese Value Rule Corpus (C-VARC) containing over 250,000 value rules enhanced and expanded through human annotation. Experimental results demonstrate that scenarios guided by C-VARC exhibit clearer value boundaries and greater content diversity compared to those produced through direct generation. In the evaluation across six sensitive themes (e.g., surrogacy, suicide), seven mainstream LLMs preferred C-VARC generated options in over 70.5% of cases, while five Chinese human annotators showed an 87.5% alignment with C-VARC, confirming its universality, cultural relevance, and strong alignment with Chinese values. Additionally, we construct 400,000 rule-based moral dilemma scenarios that objectively capture nuanced distinctions in conflicting value prioritization across 17 LLMs. Our work establishes a culturally-adaptive benchmarking framework for comprehensive value evaluation and alignment, representing Chinese characteristics.

preprint2025arXiv

Observation of robust one-dimensional edge channels in a three-dimensional quantum spin Hall insulator

Topologically protected edge channels show prospects for quantum devices. They have been found experimentally in two-dimensional (2D) quantum spin Hall insulators (QSHIs), weak topological insulators and higher-order topological insulators (HOTIs), but the number of materials realizing these topologies is still quite limited. Here, we provide evidence for topological edge states within a novel topology named three-dimensional (3D) QSHIs. Its topology originates solely from a nonzero $S_z$ spin Chern number for each $k_z$ plane of the crystal and is realized in bulk $α$-Bi$_4$I$_4$ with trivial symmetry indicators, as we show by density functional theory calculations. We experimentally observe the related edge states at each type of monolayer and bilayer step of this material by scanning tunneling microscopy. Consistently, the edge states are neither interrupted, nor backscattered by defects at the step edges corroborating their helical character as expected from the nontrivial topology. Furthermore, two individual edge channels are directly observed at bilayer steps without visible interaction gap opening, demonstrating the robustness of these edge modes against vertical stacking. Our results establish $α$-Bi$_4$I$_4$ as the first material realization of a 3D QSHI whose definition goes beyond the scope of topological symmetry indicators, and provide a pathway for realizing nearly-quantized spin Hall conductivity per unit cell in a bulk crystal.

preprint2020arXiv

Fault Diagnosis of the 10MW Floating Offshore Wind Turbine Benchmark: a Mixed Model and Signal-based Approach

Floating Offshore Wind Turbines (FOWTs) operate in the harsh marine environment with limited accessibility and maintainability. Not only failures are more likely to occur than in land-based turbines, but also corrective maintenance is more expensive. In the present study, a mixed model and signal-based Fault Diagnosis (FD) architecture is developed to detect and isolate critical faults in FOWTs. More specifically, a model-based scheme is developed to detect and isolate the faults associated with the turbine system. It is based on a fault detection and approximation estimator and fault isolation estimators, with time-varying adaptive thresholds to guarantee against false-alarms. In addition, a signal-based scheme is established, within the proposed architecture, for detecting and isolating two representative mooring lines faults. For the purpose of verification, a 10MW FOWT benchmark is developed and its operating conditions, which contains predefined faults, are simulated by extending the high-fidelity simulator. Based on it, the effectiveness of the proposed architecture is illustrated. In addition, the advantages and limitations are discussed by comparing its fault detection to the results delivered by other approaches. Results show that the proposed architecture has the best performance in detecting and isolating the critical faults in FOWTs under diverse operating conditions.

preprint2018arXiv

A New Two-Dimensional Functional Material with Desirable Bandgap and Ultrahigh Carrier Mobility

Two-dimensional (2D) semiconductors with direct and modest bandgap and ultrahigh carrier mobility are highly desired functional materials for nanoelectronic applications. Herein, we predict that monolayer CaP3 is a new 2D functional material that possesses not only a direct bandgap of 1.15 eV (based on HSE06 computation), and also a very high electron mobility up to 19930 cm2 V-1 s-1, comparable to that of monolayer phosphorene. More remarkably, contrary to the bilayer phosphorene which possesses dramatically reduced carrier mobility compared to its monolayer counterpart, CaP3 bilayer possesses even higher electron mobility (22380 cm2 V-1 s-1) than its monolayer counterpart. The bandgap of 2D CaP3 can be tuned over a wide range from 1.15 to 0.37 eV (HSE06 values) through controlling the number of stacked CaP3 layers. Besides novel electronic properties, 2D CaP3 also exhibits optical absorption over the entire visible-light range. The combined novel electronic, charge mobility, and optical properties render 2D CaP3 an exciting functional material for future nanoelectronic and optoelectronic applications.