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Ping Wu

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Published work

12 published item(s)

preprint2026arXiv

C-VARC: A Large-Scale Chinese Value Rule Corpus for Value Alignment of Large Language Models

Ensuring that Large Language Models (LLMs) align with mainstream human values and ethical norms is crucial for the safe and sustainable development of AI. Current value evaluation and alignment are constrained by Western cultural bias and incomplete domestic frameworks reliant on non-native rules; furthermore, the lack of scalable, rule-driven scenario generation methods makes evaluations costly and inadequate across diverse cultural contexts. To address these challenges, we propose a hierarchical value framework grounded in core Chinese values, encompassing three main dimensions, 12 core values, and 50 derived values. Based on this framework, we construct a large-scale Chinese Value Rule Corpus (C-VARC) containing over 250,000 value rules enhanced and expanded through human annotation. Experimental results demonstrate that scenarios guided by C-VARC exhibit clearer value boundaries and greater content diversity compared to those produced through direct generation. In the evaluation across six sensitive themes (e.g., surrogacy, suicide), seven mainstream LLMs preferred C-VARC generated options in over 70.5% of cases, while five Chinese human annotators showed an 87.5% alignment with C-VARC, confirming its universality, cultural relevance, and strong alignment with Chinese values. Additionally, we construct 400,000 rule-based moral dilemma scenarios that objectively capture nuanced distinctions in conflicting value prioritization across 17 LLMs. Our work establishes a culturally-adaptive benchmarking framework for comprehensive value evaluation and alignment, representing Chinese characteristics.

preprint2025arXiv

Observation of robust one-dimensional edge channels in a three-dimensional quantum spin Hall insulator

Topologically protected edge channels show prospects for quantum devices. They have been found experimentally in two-dimensional (2D) quantum spin Hall insulators (QSHIs), weak topological insulators and higher-order topological insulators (HOTIs), but the number of materials realizing these topologies is still quite limited. Here, we provide evidence for topological edge states within a novel topology named three-dimensional (3D) QSHIs. Its topology originates solely from a nonzero $S_z$ spin Chern number for each $k_z$ plane of the crystal and is realized in bulk $α$-Bi$_4$I$_4$ with trivial symmetry indicators, as we show by density functional theory calculations. We experimentally observe the related edge states at each type of monolayer and bilayer step of this material by scanning tunneling microscopy. Consistently, the edge states are neither interrupted, nor backscattered by defects at the step edges corroborating their helical character as expected from the nontrivial topology. Furthermore, two individual edge channels are directly observed at bilayer steps without visible interaction gap opening, demonstrating the robustness of these edge modes against vertical stacking. Our results establish $α$-Bi$_4$I$_4$ as the first material realization of a 3D QSHI whose definition goes beyond the scope of topological symmetry indicators, and provide a pathway for realizing nearly-quantized spin Hall conductivity per unit cell in a bulk crystal.

preprint2020arXiv

Fault Diagnosis of the 10MW Floating Offshore Wind Turbine Benchmark: a Mixed Model and Signal-based Approach

Floating Offshore Wind Turbines (FOWTs) operate in the harsh marine environment with limited accessibility and maintainability. Not only failures are more likely to occur than in land-based turbines, but also corrective maintenance is more expensive. In the present study, a mixed model and signal-based Fault Diagnosis (FD) architecture is developed to detect and isolate critical faults in FOWTs. More specifically, a model-based scheme is developed to detect and isolate the faults associated with the turbine system. It is based on a fault detection and approximation estimator and fault isolation estimators, with time-varying adaptive thresholds to guarantee against false-alarms. In addition, a signal-based scheme is established, within the proposed architecture, for detecting and isolating two representative mooring lines faults. For the purpose of verification, a 10MW FOWT benchmark is developed and its operating conditions, which contains predefined faults, are simulated by extending the high-fidelity simulator. Based on it, the effectiveness of the proposed architecture is illustrated. In addition, the advantages and limitations are discussed by comparing its fault detection to the results delivered by other approaches. Results show that the proposed architecture has the best performance in detecting and isolating the critical faults in FOWTs under diverse operating conditions.

preprint2018arXiv

A New Two-Dimensional Functional Material with Desirable Bandgap and Ultrahigh Carrier Mobility

Two-dimensional (2D) semiconductors with direct and modest bandgap and ultrahigh carrier mobility are highly desired functional materials for nanoelectronic applications. Herein, we predict that monolayer CaP3 is a new 2D functional material that possesses not only a direct bandgap of 1.15 eV (based on HSE06 computation), and also a very high electron mobility up to 19930 cm2 V-1 s-1, comparable to that of monolayer phosphorene. More remarkably, contrary to the bilayer phosphorene which possesses dramatically reduced carrier mobility compared to its monolayer counterpart, CaP3 bilayer possesses even higher electron mobility (22380 cm2 V-1 s-1) than its monolayer counterpart. The bandgap of 2D CaP3 can be tuned over a wide range from 1.15 to 0.37 eV (HSE06 values) through controlling the number of stacked CaP3 layers. Besides novel electronic properties, 2D CaP3 also exhibits optical absorption over the entire visible-light range. The combined novel electronic, charge mobility, and optical properties render 2D CaP3 an exciting functional material for future nanoelectronic and optoelectronic applications.

preprint2015arXiv

Evaluation of Phosphorene as Anode Material for Na-ion Batteries from First Principles

We systematically evaluate the prospects of a novel 2D nanomaterial, phosphorene, as anode for Na-ion batteries. Using first-principles calculations, we determine the Na adsorption energy, specific capacity and Na diffusion barriers on monolayer phosphorene. We examine the main trends in electronic structure and mechanical properties as a function of Na concentration. We find favorable Na-phosphorene interaction with theoretical capacity, exceeding those of alternative monolayer anodes for Na-ion batteries. We find that Na-phosphorene undergoes semiconductor-metal transition at high Na concentration. Our results show that Na diffusion on phosphorene is fast and anisotropic with the energy barrier of only 0.04 eV. Owing to the high capacity, good stability, excellent electrical conductivity and high Na mobility, monolayer phosphorene is a very promising anode material for Na-ion batteries. The calculated performance in terms of specific capacity and diffusion barrier is compared to other layered 2D electrode materials, such as graphene, MoS2, polysilane, etc.

preprint2014arXiv

Bilayer Graphene Growth via a Penetration Mechanism

From both fundamental and technical points of view, a precise control of the layer number of graphene samples is very important. To reach this goal, atomic scale mechanisms of multilayer graphene growth on metal surfaces should be understood. Although it is a geometrically favorable pathway to transport carbon species to interface and then form a new graphene layer there, penetration of a graphene overlayer is not a chemically straightforward process. In this study, the possibility of different active species to penetrate a graphene overlayer on Cu(111) surface is investigated based on first principles calculations. It is found that carbon atom penetration can be realized via an atom exchange process, which leads to a new graphene growth mechanism. Based on this result, a bilayer graphene growth protocol is proposed to obtain high quality samples. Such a penetration possibility also provides a great flexibility for designed growth of graphene nanostructures.

preprint2014arXiv

Field and long-term demonstration of a wide area quantum key distribution network

A wide area quantum key distribution (QKD) network deployed on communication infrastructures provided by China Mobile Ltd. is demonstrated. Three cities and two metropolitan area QKD networks were linked up to form the Hefei-Chaohu-Wuhu wide area QKD network with over 150 kilometers coverage area, in which Hefei metropolitan area QKD network was a typical full-mesh core network to offer all-to-all interconnections, and Wuhu metropolitan area QKD network was a representative quantum access network with point-to-multipoint configuration. The whole wide area QKD network ran for more than 5000 hours, from 21 December 2011 to 19 July 2012, and part of the network stopped until last December. To adapt to the complex and volatile field environment, the Faraday-Michelson QKD system with several stability measures was adopted when we designed QKD devices. Through standardized design of QKD devices, resolution of symmetry problem of QKD devices, and seamless switching in dynamic QKD network, we realized the effective integration between point-to-point QKD techniques and networking schemes.

preprint2013arXiv

Orientation Sensitive Nonlinear Growth of Graphene: A Geometry-determined Epitaxial Growth Mechanism

Although the corresponding carbon-metal interactions can be very different, a similar nonlinear growth behavior of graphene has been observed for different metal substrates. To understand this interesting experimental observation, a multiscale $\lq\lq$standing-on-the-front" kinetic Monte Carlo study is performed. An extraordinary robust geometry effect is identified, which solely determines the growth kinetics and makes the details of carbon-metal interaction not relevant at all. Based on such a geometry-determined mechanism, epitaxial growth behavior of graphene can be easily predicted in many cases. As an example, an orientation-sensitive growth kinetics of graphene on Ir(111) surface has been studied. Our results demonstrate that lattice mismatch pattern at the atomic level plays an important role for macroscopic epitaxial growth.

preprint2012arXiv

Efficient estimation of moments in linear mixed models

In the linear random effects model, when distributional assumptions such as normality of the error variables cannot be justified, moments may serve as alternatives to describe relevant distributions in neighborhoods of their means. Generally, estimators may be obtained as solutions of estimating equations. It turns out that there may be several equations, each of them leading to consistent estimators, in which case finding the efficient estimator becomes a crucial problem. In this paper, we systematically study estimation of moments of the errors and random effects in linear mixed models.

preprint2011arXiv

Atomistic Mechanisms of Nonlinear Graphene Growth on Ir Surface

As a two-dimensional material, graphene can be naturally obtained via epitaxial growth on a suitable substrate. Growth condition optimization usually requires an atomistic level understanding of the growth mechanism. In this article, we perform a mechanistic study about graphene growth on Ir(111) surface by combining first principles calculations and kinetic Monte Carlo (kMC) simulations. Small carbon clusters on the Ir surface are checked first. On terraces, arching chain configurations are favorable in energy and they are also of relatively high mobilities. At steps, some magic two-dimensional compact structures are identified, which show clear relevance to the nucleation process. Attachment of carbon species to a graphene edge is then studied. Due to the effect of substrate, at some edge sites, atomic carbon attachment becomes thermodynamically unfavorable. Graphene growth at these difficult sites has to proceed via cluster attachment, which is the growth rate determining step. Based on such an inhomogeneous growth picture, kMC simulations are made possible by successfully separating different timescales, and they well reproduce the experimentally observed nonlinear kinetics. Different growth rates and nonlinear behaviors are predicted for different graphene orientations, which is consistent with available experimental results. Importantly, as a phenomenon originated from lattice mismatch, inhomogeneity revealed in this case is expected to be quite universal and it should also make important roles in many other hetero-epitaxial systems.

preprint2011arXiv

Chemical Vapor Deposition Growth of Graphene using Other Hydrocarbon Sources

Graphene has attracted a lot of research interests due to its exotic properties and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000°C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400°C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300°C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a way to undemanding route for economical and convenient graphene growth.

preprint2011arXiv

First-Principles Thermodynamics of Graphene Growth on Cu Surface

Chemical vapor deposition (CVD) is an important method to synthesis grapheme on a substract. Recently, Cu becomes the most popular CVD substrate for graphene growth. Here, we combine electronic structure calculation, molecular dynamics simulation, and thermodynamics analysis to study the graphene growth process on Cu surface. As a fundamentally important but previously overlooked fact, we find that carbon atoms are thermodynamically unfavorable on Cu surface under typical experimental conditions. The active species for graphene growth should thus mainly be CHx instead of atomic carbon. Based on this new picture, the nucleation behavior can be understood, which explains many experimental observations and also provides us a guide to improve graphene sample quality.