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Ping V. Lin

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cond-mat.dis-nn cond-mat.str-el cond-mat.supr-con

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preprint2015arXiv

Critical Behavior of a Strongly Disordered 2D Electron System: The Cases of Long-Range and Screened Coulomb Interactions

A study of the temperature (T) and density (n_s) dependence of conductivity σ(n_s,T) of a highly disordered, two-dimensional (2D) electron system in Si demonstrates scaling behavior consistent with the existence of a metal-insulator transition (MIT). The same critical exponents are found when the Coulomb interaction is screened by the metallic gate and when it is unscreened or long range. The results strongly suggest the existence of a disorder-dominated 2D MIT, which is not directly affected by the range of the Coulomb interactions.

preprint2014arXiv

Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$

In the underdoped pseudogap regime of cuprate superconductors, the normal state is commonly probed by applying a magnetic field ($H$). However, the nature of the $H$-induced resistive state has been the subject of a long-term debate, and clear evidence for a zero-temperature ($T=0$) $H$-tuned superconductor-insulator transition (SIT) has proved elusive. Here we report magnetoresistance measurements in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$, providing striking evidence for quantum critical behavior of the resistivity -- the signature of a $H$-driven SIT. The transition is not direct: it is accompanied by the emergence of an intermediate state, which is a superconductor only at $T=0$. Our finding of a two-stage $H$-driven SIT goes beyond the conventional scenario in which a single quantum critical point separates the superconductor and the insulator in the presence of a perpendicular $H$. Similar two-stage $H$-driven SIT, in which both disorder and quantum phase fluctuations play an important role, may also be expected in other copper-oxide high-temperature superconductors.

preprint2012arXiv

Conductance noise in an out-of-equilibrium two-dimensional electron system

A study of the conductance noise in a two-dimensional electron system (2DES) in Si at low temperatures (T) reveals the onset of large, non-Gaussian noise after cooling from an equilibrium state at a high T with a fixed carrier density n_s. This behavior, which signifies the falling out of equilibrium of the 2DES as T->0, is observed for n_s<n_g (n_g - glass transition density). A protocol where density is changed by a small value Δn_s at low T produces the same results for the noise power spectra. However, a detailed analysis of the non-Gaussian probability density functions (PDFs) of the fluctuations reveals that Δn_s has a qualitatively different and more dramatic effect than ΔT, suggesting that Δn_s induces strong changes in the free energy landscape of the system as a result of Coulomb interactions. The results from a third, waiting-time (t_w) protocol, where n_s is changed temporarily during t_w by a large amount, demonstrate that non-Gaussian PDFs exhibit history dependence and an evolution towards a Gaussian distribution as the system ages and slowly approaches equilibrium. By calculating the power spectra and higher-order statistics for the noise measured over a wide range of the applied voltage bias, it is established that the non-Gaussian noise is observed in the regime of Ohmic or linear response, i.e. that it is not caused by the applied bias.