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Researcher profile

J. Jaroszynski

J. Jaroszynski contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.mtrl-scicond-mat.dis-nncond-mat.mes-hallcond-mat.str-el

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Published work

10 published item(s)

preprint2014arXiv

Development of very high Jc in Ba(Fe1-xCox)2As2 thin films grown on CaF2

Ba(Fe1-xCox)2As2 is the most tunable of the Fe-based superconductors (FBS) in terms of acceptance of high densities of self-assembled and artificially introduced pinning centres which are effective in significantly increasing the critical current density, Jc. Moreover, FBS are very sensitive to strain, which induces an important enhancement in critical temperature, Tc, of the material. In this paper we demonstrate that strain induced by the substrate can further improve Jc of both single and multilayer films by more than that expected simply due to the increase in Tc. The multilayer deposition of Ba(Fe1-xCox)2As2 on CaF2 increases the pinning force density Fp by more than 60% compared to a single layer film, reaching a maximum of 84 GN/m^3 at 22.5T and 4.2 K, the highest value ever reported in any 122 phase.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Anisotropy of the irreversibility field for Zr-doped $(Y,Gd)Ba_2Cu_3O_{7-x}$ thin films up to 45T

The anisotropic irreversibility field B$_{Irr}$ of two $YBa_2Cu_3O_{7-x}$ thin films doped with additional rare earth (RE)=(Gd,Y) and Zr and containing strong correlated pins (splayed BaZrO$_{3}$ nanorods, and $RE_2O_3$ nanoprecipitates), has been measured over a very broad range up to 45T at temperatures 56 K<T<$T_c$. We found that the experimental angular dependence of $B_{Irr}(θ)$ does not follow the mass anisotropy scaling $B_{Irr}(θ)=B_{Irr}(0)(cos^2θ+γ^{-2}sin^2θ)^{-1/2}$, where $γ=(m_c/m_{ab})^{1/2}=5-6$ for the RE-doped $YBa_2Cu_3O_{7-x}$ (REBCO) crystals, m$_{ab}$ and m$_{c}$ are the effective masses along the ab plane and the c-axis, respectively, and $θ$ is the angle between B and the c-axis. For B parallel to the ab-planes and to the c-axis correlated pinning strongly enhances B$_{Irr}$, while at intermediate angles, $B_{Irr}(θ)$ follows the scaling behavior $B_{Irr}(θ)\propto(cos^2θ+γ_{RP}^2sin^2θ)^{1/2}$ with the effective anisotropy factor $γ_{RP}\approx3$ significantly smaller than the mass anisotropy would suggest. In spite of the strong effects of c-axis BaZrO$_{3}$ nanorods, we found even greater enhancements of B$_{Irr}$ for fields along the ab-planes than for fields parallel to the c-axis, as well as different temperature dependences of the correlated pinning contributions to B$_{Irr}$ for B//ab and B//c. Our results show that the dense and strong pins, which can now be incorporated into REBCO thin films in a controlled way, exert major and diverse effects on the measured vortex pinning anisotropy and the irreversibility field over wide ranges of B and T. In particular, we show that the relative contribution of correlated pinning to B$_{Irr}$ for B//c increases as the temperature increases due to the suppression of thermal fluctuations of vortices by splayed distribution of BaZrO$_{3}$ nanorods.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Artificial and self-assembled pinning centers in Ba(Fe1-xCox)2As2 thin films as a route to very high current density

We report on the superior vortex pinning of single and multilayer Ba(Fe1-xCox)2As2 thin films with self-assembled c-axis and artificially introduced ab-plane pins. Ba(Fe1-xCox)2As2 can accept a very high density of pins (15-20 vol%) without Tc suppression. The matching field is greater than 12 T, producing a significant enhancement of the critical current density Jc, an almost isotropic Jc (Theta,20T) > 10^5 A/cm2, and global pinning force density Fp of about 50 GN/m^3. This scenario strongly differs from the high temperature cuprates where the addition of pins without Tc suppression is limited to 2-4 vol%, leading to small HIrr enhancements and improved Jc only below 3-5 Tesla.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Conductance noise in an out-of-equilibrium two-dimensional electron system

A study of the conductance noise in a two-dimensional electron system (2DES) in Si at low temperatures (T) reveals the onset of large, non-Gaussian noise after cooling from an equilibrium state at a high T with a fixed carrier density n_s. This behavior, which signifies the falling out of equilibrium of the 2DES as T->0, is observed for n_s<n_g (n_g - glass transition density). A protocol where density is changed by a small value Δn_s at low T produces the same results for the noise power spectra. However, a detailed analysis of the non-Gaussian probability density functions (PDFs) of the fluctuations reveals that Δn_s has a qualitatively different and more dramatic effect than ΔT, suggesting that Δn_s induces strong changes in the free energy landscape of the system as a result of Coulomb interactions. The results from a third, waiting-time (t_w) protocol, where n_s is changed temporarily during t_w by a large amount, demonstrate that non-Gaussian PDFs exhibit history dependence and an evolution towards a Gaussian distribution as the system ages and slowly approaches equilibrium. By calculating the power spectra and higher-order statistics for the noise measured over a wide range of the applied voltage bias, it is established that the non-Gaussian noise is observed in the regime of Ohmic or linear response, i.e. that it is not caused by the applied bias.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Significant enhancement of upper critical fields by doping and strain in Fe-based superconductors

We report measurements of Hc2(T) up to 85 Tesla on Ba1-xKxAs2Fe2 single crystals and FeSe1-xTex films tuned by doping and strain. We observed an Hc2 enhancement by nearly 25 T at 30 K for the optimally-doped Ba1-xKxAs2Fe2 as compared to the previous results and extraordinarily high slopes dHc2/dT = 250-500 T/K near Tc in FeSe1-xTex indicating an almost complete suppression of the orbital pair-breaking. Theoretical analysis of Hc2(T) in FeSe1-xTex and the optimally doped Ba1-xKxAs2Fe2 predicts an inhomogeneous Fulde-Ferrel-Larkin-Ovchinnikov state for H//ab and T < 3-10 K, and shows that Hc2 in multiband Fe based superconductor can be enhanced by doping and strain much more effectively than by the conventional way of increasing disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Comparative High Field Magneto-Transport of Rare Earth Oxypnictides with Maximum Transition Temperatures

The recent discovery of a new class of superconducting oxypnictides with high transition temperatures may have profound implications for understanding unconventional high-temperature superconductivity. Like the cuprates, the oxypnictides seem to manifest an interleaving of charge donor and superconducting layers emerging upon doping of an antiferromagnetic parent semi-metal. Here we report magneto-transport measurements of three rare earth (Re = La, Nd, Sm) oxypnicide compounds with the transition temperatures near the maximum reported to date, in very high DC and pulsed magnetic fields up to 45 and 54 T, respectively. Our resistivity, Hall coefficient and critical magnetic fields data suggest that these oxypnictide superconductors bridge the gap between MgB$_2$ and YBaCu$_3$O$_{7-x}$ as far as electromagnetic and vortex properties are concerned.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

An Intermediate Phase at the Metal-Insulator Boundary in a Magnetically Doped Two-Dimensional Electron System

A magnetotransport study in magnetically doped (Cd,Mn)Te 2D quantum wells reveals an apparent metal-insulator transition as well as an anomalous intermediate phase just on its metallic side. This phase is characterized by colossal magnetoresistance-like phenomena, which are assigned to the phase separation of the electron fluid and the associated emergence of ferromagnetic bubbles.

0 citations0 reviewsNo code linkedOpen access
preprint2000arXiv

Carrier-induced ferromagnetism in p-Zn1-xMnxTe

We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped Zn1-xMnxTe epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance and spin-dependent Hall effect measurements. The experimental findings compare favorably, without adjustable parameters, with the prediction of the Rudermann-Kittel-Kasuya-Yosida (RKKY) model or its continuous-medium limit, that is, the Zener model, provided that the presence of the competing antiferromagnetic spin-spin superexchange interaction is taken into account, and the complex structure of the valence band is properly incorporated into the calculation of the spin susceptibility of the hole liquid. In general terms, the findings demonstrate how the interplay between the ferromagnetic RKKY interaction, carrier localization, and intrinsic antiferromagnetic superexchange affects the ordering temperature and the saturation value of magnetization in magnetically and electrostatically disordered systems.

0 citations0 reviewsNo code linkedOpen access
preprint1999arXiv

Weak localization in the 2D metallic regime of Si-MOS

The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the momentum relaxation time at 10 K but nearly 100 times longer at the lowest temperature. Nevertheless, only weak logarithmic corrections to the conductivity are present in the investigated temperature and concentration range thus proving the absence of strong quantum effects due to electron-electron interaction. From saturation effects of the phase coherence time a lower boundary for spin-orbit scattering of about 200 ps is estimated.

0 citations0 reviewsNo code linkedOpen access
preprint1997arXiv

Interaction effects at the magnetic-field induced metal-insulator transition in Si/SiGe superlattices

A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particle-hole diffusion channel. It is expected that this term, possibly together with the singlet particle-particle contribution, is of general importance in disordered n-type Si bulk and heterostructures.

0 citations0 reviewsNo code linkedOpen access