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Researcher profile

Peter Stano

Peter Stano contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phphysics.app-ph

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Published work

4 published item(s)

preprint2026arXiv

Inferring charge-noise source locations from correlations in spin qubits

We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by charge noise. At low frequencies, the noise spectra are not well described by a power law; instead, they reveal the presence of a few individual two-level fluctuators (TLFs). We demonstrate that the noise cross-correlations allow one to get information on the spatial location of such individual TLFs.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Optimal frequency estimation and its application to quantum dots

We address the interaction-time optimization for frequency estimation in a two-level system. The goal is to estimate with maximum precision a stochastic perturbation. Our approach is valid for any figure of merit used to define optimality, and is illustrated for the variance and entropy. For the entropy, we clarify the connection to maximum-likelihood estimation. We devise novel estimation protocols with and without feedback. They outperform common protocols given in the literature. We design a probabilistic self-consistent protocol as an optimal estimation without feedback. It can improve current experimental techniques and boost coherence times in quantum computing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Coherence of a driven electron spin qubit actively decoupled from quasi-static noise

The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the last decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood. We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by high-frequency charge noise rather than the quasi-static noise inherent to any semiconductor device. We employed a feedback control technique to actively suppress the latter, demonstrating a $π$-flip gate fidelity as high as $99.04\pm 0.23\,\%$ in a gallium arsenide quantum dot. We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the $1/f$ noise observed in isotopically purified silicon qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin orbit field in a physically defined p type MOS silicon double quantum dot

We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel. In this way, we find that the spin flip of a tunneling hole is due to a SO field pointing perpendicular to the double dot axis and almost fully out of the quantum well plane. We augment the measurements by a derivation of SO terms using group symmetric representations theory. It predicts that without in plane electric fields (a quantum well case), the SO field would be mostly within the plane, dominated by a sum of a Rashba and a Dresselhaus like term. We, therefore, interpret the observed SO field as originated in the electric fields with substantial in plane components.

0 citations0 reviewsNo code linkedOpen access