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Jaroslav Fabian

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con cond-mat.other physics.app-ph

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preprint2026arXiv

Electric-current control of anomalous Hall effect

We demonstrate robust and reversible electric-current control of the anomalous Hall effect (AHE) in a two-dimensional WTe2/Fe3GeTe2 (FGT) stack. Applying a current through Td-WTe2 leads to a giant modulation of the AHE of the adjacent FGT layer, with the relative change of the AHE conductivity exceeding 180%. Control experiments show that i) the observed effect is absent in pure FGT, ii) the modulation weakens in thicker FGT films, confirming its interfacial origin, and iii) the modulation peaks for bilayer WTe2, indicating that the Berry-curvature dipole (BCD) plays the dominant role in the modulation. We propose that the charge current I generates an out-of-plane magnetization Mz via BCD in WTe2 and Mz modifies the exchange splitting of FGT via the inverse magnetic proximity effect, thereby altering its Berry curvature and nontrivially influencing the AHE. The demonstrated method of AHE control offers new possibilities for magnetism control, i.e., for the study of AHE-transistors as well as electric-current control of quantum magnets, especially magnetic insulators.

preprint2026arXiv

Resonant magnetic proximity hot spots in Co/hBN/graphene

Magnetic proximity effects in Co/hBN/graphene heterostructures are systematically analyzed via first-principles calculations, demonstrating a pronounced localized spatial variation of the induced spin polarization of graphene's Dirac states. The proximity-induced exchange coupling, magnetic moments, and tunneling spin polarization (TSP) are shown to depend sensitively on the atomic registry at the interfaces. We analyze more than twenty distinct stackings, including high- and low-symmetry configurations, and reveal that the spin splittings of graphene's Dirac bands span a wide range from 1 to 100 meV, depending on the local hybridization of Co $d_{z^2}$, hBN $p_z$, and graphene $p_z$ orbitals. The strongest proximity effects emerge at geometric resonances, or "proximity hot spots", where the three orbital states overlap maximally. The local spin polarization also depends sensitively on energy: Dirac states aligned with resonant Co orbitals experience the most pronounced exchange interaction. At these energies, the pseudospin Hamiltonian description of magnetic proximity effects breaks down. Outside these resonances, the pseudospin picture is restored. Our findings highlight the intrinsically local nature of proximity effects, governed by the spectral resonance and interlayer wavefunction overlap. We further quantify how additional hBN layers, interlayer twist, and multilayer graphene modify the proximity exchange and TSP, offering microscopic insight for designing spintronic van der Waals heterostructures with engineered interfaces and optimized spin transport.

preprint2023arXiv

Strong manipulation of the valley splitting upon twisting and gating in MoSe$_2$/CrI$_3$ and WSe$_2$/CrI$_3$ van der Waals heterostructures

We investigate the twist-angle and gate dependence of the proximity-induced exchange coupling in the monolayer transition-metal dichalcogenides (TMDCs) MoSe$_2$ and WSe$_2$ due to the vdW coupling to the ferromagnetic semiconductor CrI$_3$, from first-principles calculations. A model Hamiltonian, that captures the relevant band edges at the $K/K^{\prime}$ valleys of the proximitized TMDCs, is employed to quantify the proximity-induced exchange. Upon twisting from 0° to 30°, we find a transition of the TMDC valence band (VB) edge exchange splitting from about $-2$ to $2$ meV, while the conduction band (CB) edge exchange splitting remains nearly unchanged at around $-3$ meV. For the VB of WSe$_2$ (MoSe$_2$) on CrI$_3$, the exchange coupling changes sign at around 8° (16°). We find that even at the angles with almost zero spin splittings of the VB, the real-space spin polarization profile of holes at the band edge is highly non-uniform, with alternating spin up and spin down orbitals. Furthermore, a giant tunability of the proximity-induced exchange coupling is provided by a transverse electric field of a few V/nm. We complement our \textit{ab initio} results by calculating the excitonic valley splitting to provide experimentally verifiable optical signatures of the proximity exchange. Specifically, we predict that the valley splitting increases almost linearly as a function of the twist angle. Furthermore, the proximity exchange is highly tunable by gating, allowing to tailor the valley splitting in the range of 0 to 12 meV in WSe$_2$/CrI$_3$, which is equivalent to external magnetic fields of up to about 60 Tesla. Our results highlight the important impact of the twist angle and gating when employing magnetic vdW heterostructures in experimental geometries.

preprint2023arXiv

Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides

We present a DFT-based investigation of the twist-angle dependent proximity spin-orbit coupling (SOC) in graphene/TMDC structures. We find that for Mo-based TMDCs the proximity valley-Zeeman SOC exhibits a maximum at around 15--20°, and vanishes at 30°, while for W-based TMDCs we find an almost linear decrease of proximity valley-Zeeman SOC when twisting from 0° to 30°. The induced Rashba SOC is rather insensitive to twisting, while acquiring a nonzero Rashba phase angle, $φ\in [-20;40]$°, for twist angles different from 0° and 30°. This finding contradicts earlier tight-binding predictions that the Rashba angle can be 90° in the studied systems. In addition, we study the influence of several tunability knobs on the proximity SOC for selected twist angles. By applying a transverse electric field in the limits of $\pm 2$ V/nm, mainly the Rashba SOC can be tuned by about 50\%. The interlayer distance provides a giant tunability, since the proximity SOC can be increased by a factor of 2--3, when reducing the distance by about 10\%. Encapsulating graphene between two TMDCs, both twist angles are important to control the interference of the individual proximity SOCs, allowing to precisely tailor the valley-Zeeman SOC in graphene, while the Rashba SOC becomes suppressed. Finally, based on our effective Hamiltonians with fitted parameters, we calculate experimentally measurable quantities such as spin lifetime anisotropy and charge-to-spin conversion efficiencies. The spin lifetime anisotropy can become giant, up to $10^4$, in encapsulated structures. The charge-to-spin conversion, which is due to spin-Hall and Rashba-Edelstein effects, can lead to twist-tunable non-equilibrium spin-density polarizations that are perpendicular and parallel to the applied charge current.

preprint2022arXiv

Counterintuitive gate dependence of weak antilocalization in bilayer graphene/WSe$_2$ heterostructures

Strong gate control of proximity-induced spin-orbit coupling was recently predicted in bilayer graphene/transition metal dichalcogenides (BLG/TMDC) heterostructures, as charge carriers can easily be shifted between the two graphene layers, and only one of them is in close contact to the TMDC. The presence of spin-orbit coupling can be probed by weak antilocalization (WAL) in low field magnetotransport measurements. When the spin-orbit splitting in such a heterostructure increases with the out of plane electric displacement field $\bar D$, one intuitively expects a concomitant increase of WAL visibility. Our experiments show that this is not the case. Instead, we observe a maximum of WAL visibility around $\bar D=0$. This counterintuitive behaviour originates in the intricate dependence of WAL in graphene on symmetric and antisymmetric spin lifetimes, caused by the valley-Zeeman and Rashba terms, respectively. Our observations are confirmed by calculating spin precession and spin lifetimes from an $8\times 8$ model Hamiltonian of BLG/TMDC.

preprint2022arXiv

Effect of Rashba and Dresselhaus spin-orbit coupling on supercurrent rectification and magnetochiral anisotropy of ballistic Josephson junctions

Simultaneous breaking of inversion- and time-reversal symmetry in Josephson junction leads to a possible violation of the $I(φ)=-I(-φ)$ equality for the current-phase relation. This is known as anomalous Josephson effect and it produces a phase shift $φ_0$ in sinusoidal current-phase relations. In ballistic Josephson junctions with non-sinusoidal current phase relation the observed phenomenology is much richer, including the supercurrent diode effect and the magnetochiral anisotropy of Josephson inductance. In this work, we present measurements of both effects on arrays of Josephson junctions defined on epitaxial Al/InAs heterostructures. We show that the orientation of the current with respect to the lattice affects the magnetochiral anisotropy, possibly as the result of a finite Dresselhaus component. In addition, we show that the two-fold symmetry of the Josephson inductance reflects in the activation energy for phase slips.

preprint2022arXiv

Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr$_2$Ge$_2$Te$_6$

We investigate the twist-angle and gate dependence of the proximity exchange coupling in twisted graphene on monolayer Cr$_2$Ge$_2$Te$_6$ from first principles. The proximitized Dirac band dispersions of graphene are fitted to a model Hamiltonian, yielding effective sublattice-resolved proximity-induced exchange parameters ($λ_{\textrm{ex}}^\textrm{A}$ and $λ_{\textrm{ex}}^\textrm{B}$) for a series of twist angles between 0$^{\circ}$ and 30$^{\circ}$. For aligned layers (0$^{\circ}$ twist angle), the exchange coupling of graphene is the same on both sublattices, $λ_{\textrm{ex}}^\textrm{A} \approx λ_{\textrm{ex}}^\textrm{B} \approx 4$ meV, while the coupling is reversed at 30$^{\circ}$ (with $λ_{\textrm{ex}}^\textrm{A} \approx λ_{\textrm{ex}}^\textrm{B} \approx -4$ meV). Remarkably, at 19.1$^{\circ}$ the induced exchange coupling becomes antiferromagnetic: $λ_{\textrm{ex}}^\textrm{A} < 0, λ_{\textrm{ex}}^\textrm{B} > 0$. Further tuning is provided by a transverse electric field and the interlayer distance. The predicted proximity magnetization reversal and emergence of an antiferromagnetic Dirac dispersion make twisted graphene/Cr$_2$Ge$_2$Te$_6$ bilayers a versatile platform for realizing topological phases and for spintronics applications.

preprint2022arXiv

Proximity effects in graphene on monolayers of transition-metal phosphorus trichalcogenides MPX$_3$

We investigate the electronic band structure of graphene on a series of two-dimensional magnetic transition-metal phosphorus trichalcogenide monolayers, MPX$_3$ with M={Mn,Fe,Ni,Co} and X={S,Se}, with first-principles calculations. A symmetry-based model Hamiltonian is employed to extract orbital parameters and sublattice resolved proximity-induced exchange couplings ($λ_{\textrm{ex}}^\textrm{A}$ and $λ_{\textrm{ex}}^\textrm{B}$) from the low-energy Dirac bands of the proximitized graphene. Depending on the magnetic phase of the MPX$_3$ layer (ferromagnetic and three antiferromagnetic ones), completely different Dirac dispersions can be realized with exchange splittings ranging from 0 to 10~meV. Surprisingly, not only the magnitude of the exchange couplings depends on the magnetic phase, but also the global sign and the type. Important, one can realize uniform ($λ_{\textrm{ex}}^\textrm{A} \approx λ_{\textrm{ex}}^\textrm{B}$) and staggered ($λ_{\textrm{ex}}^\textrm{A} \approx -λ_{\textrm{ex}}^\textrm{B}$) exchange couplings in graphene. From selected cases, we find that the interlayer distance, as well as a transverse electric field are efficient tuning knobs for the exchange splittings of the Dirac bands. More specifically, decreasing the interlayer distance by only about 10\%, a giant 5-fold enhancement of proximity exchange is found, while applying few V/nm of electric field, provides tunability of proximity exchange by tens of percent. We have also studied the dependence on the Hubbard $U$ parameter and find it to be weak. Moreover, we find that the effect of SOC on the proximitized Dirac dispersion is negligible compared to the exchange coupling.

preprint2022arXiv

Proximity spin-orbit and exchange coupling in ABA and ABC trilayer graphene van der Waals heterostructures

We investigate the proximity spin-orbit and exchange couplings in ABA and ABC trilayer graphene encapsulated within monolayers of semiconducting transition-metal dichalcogenides and the ferromagnetic semiconductor Cr$_2$Ge$_2$Te$_6$. Employing first-principles calculations we obtain the electronic structures of the multilayer stacks and extract the relevant proximity-induced orbital and spin interaction parameters by fitting the low-energy bands to model Hamiltonians. We also demonstrate the tunability of the proximity effects by a transverse electric field. Using the model Hamiltonians we also study mixed spin-orbit/exchange coupling encapsulation, which allows to tailor the spin interactions very efficiently by the applied field. We also summarize the spin-orbit physics of bare ABA, ABC, and ABB trilayers, and provide, along with the first-principles results of the electronic band structures, density of states, spin splittings, and electric-field tunabilities of the bands, qualitative understanding of the observed behavior and realistic model parameters as a resource for model simulations of transport and correlation physics in trilayer graphene.

preprint2022arXiv

Signatures of superconducting triplet pairing in Ni--Ga-bilayer junctions

Ni-Ga bilayers are a versatile platform for exploring the competition between strongly antagonistic ferromagnetic and superconducting phases. We characterize the impact of this competition on the transport properties of highly-ballistic Al/Al2O3(/EuS)/Ni-Ga tunnel junctions from both experimental and theoretical points of view. While the conductance spectra of junctions comprising Ni (3 nm)-Ga (60 nm) bilayers can be well understood within the framework of earlier results, which associate the emerging main conductance maxima with the junction films' superconducting gaps, thinner Ni (1.6 nm)-Ga (30 nm) bilayers entail completely different physics, and give rise to novel large-bias (when compared to the superconducting gap of the thin Al film as a reference) conductance-peak subseries that we term conductance shoulders. These conductance shoulders might attract considerable attention also in similar magnetic superconducting bilayer junctions, as we predict them to offer an experimentally well-accessible transport signature of superconducting triplet pairings that are induced around the interface of the Ni-Ga bilayer. We further substantiate this claim performing complementary polarized neutron reflectometry measurements on the bilayers, from which we deduce (1) a nonuniform magnetization structure in Ga in a several nanometer-thick area around the Ni-Ga boundary and can simultaneously (2) satisfactorily fit the obtained data only considering the paramagnetic Meissner response scenario. While the latter provides independent experimental evidence of induced triplet superconductivity inside the Ni-Ga bilayer, the former might serve as the first experimental hint of its potential microscopic physical origin.

preprint2022arXiv

Strong substrate strain effects in multilayered WS2 revealed by high-pressure optical measurements

The optical properties of two-dimensional materials can be effectively tuned by strain induced from a deformable substrate. In the present work we combine first-principles calculations based on density functional theory and the effective Bethe-Salpeter equation with high-pressure optical measurements in order to thoroughly describe the effect of strain and dielectric environment onto the electronic band structure and optical properties of a few-layered transition metal dichalcogenide. Our results show that WS2 remains fully adhered to the substrate at least up to a -0.6% in-plane compressive strain for a wide range of substrate materials. We provide a useful model to describe effect of strain on the optical gap energy. The corresponding experimentally-determined out-of-plane and in-plane stress gauge factors for WS2 monolayers are -8 and 24 meV/GPa, respectively. The exceptionally large in-plane gauge factor confirm transition metal dichalcogenides as very promising candidates for flexible functionalities. Finally, we discuss the pressure evolution of an optical transition closely-lying to the A exciton for bulk WS2 as well as the direct-to-indirect transition of the monolayer upon compression.

preprint2021arXiv

Edge states in proximitized graphene ribbons and flakes in a perpendicular magnetic field: emergence of lone pseudohelical pairs and pure spin-current states

We investigate the formation of edge states in graphene ribbons and flakes with proximity induced valley-Zeeman and Rashba spin-orbit couplings in the presence of a perpendicular magnetic field $B$. Two types of edges states appear in the spin-orbit gap at the Fermi level at zero field: strongly localized pseudohelical (intervalley) states and weakly localized intravalley states. We show that if the magnetic field is stronger than a crossover field $B_c$, which is a few mT for realistic systems such as graphene/WSe$_2$, only the pseudohelical edge states remain in zigzag graphene ribbons; the intravalley states disappear. The crossover is directly related to the closing and reopening of the bulk gap formed between nonzero Landau levels. Remarkably, in finite flakes the pseudohelical states undergo perfect reflection at the armchair edges if $B > B_c$, forming standing waves at the zigzag edges. These standing waves comprise two counterpropagating pseudohelical states, so while they carry no charge current, they do carry (pure) spin current.

preprint2021arXiv

Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties

We investigate the electronic structure of graphene on a series of 2D hexagonal nitride insulators hXN, X = B, Al, and Ga, with DFT calculations. A symmetry-based model Hamiltonian is employed to extract orbital parameters and spin-orbit coupling (SOC) from the low-energy Dirac bands of proximitized graphene. While commensurate hBN induces a staggered potential of about 10 meV into the Dirac bands, less lattice-matched hAlN and hGaN disrupt the Dirac point much less, giving a staggered gap below 100 $μ$eV. Proximitized intrinsic SOC surprisingly does not increase much above the pristine graphene value of 12 $μ$eV; it stays in the window of (1-16) $μ$eV, depending strongly on stacking. However, Rashba SOC increases sharply when increasing the atomic number of the boron group, with calculated maximal values of 8, 15, and 65 $μ$eV for B, Al, and Ga-based nitrides, respectively. The individual Rashba couplings also depend strongly on stacking, vanishing in symmetrically-sandwiched structures, and can be tuned by a transverse electric field. The extracted spin-orbit parameters were used as input for spin transport simulations based on Chebyshev expansion of the time-evolution of the spin expectation values, yielding interesting predictions for the electron spin relaxation. Spin lifetime magnitudes and anisotropies depend strongly on the specific (hXN)/graphene/hXN system, and they can be efficiently tuned by an applied external electric field as well as the carrier density in the graphene layer. A particularly interesting case for experiments is graphene/hGaN, in which the giant Rashba coupling is predicted to induce spin lifetimes of 1-10 ns, short enough to dominate over other mechanisms, and lead to the same spin relaxation anisotropy as observed in conventional semiconductor heterostructures: 50\%, meaning that out-of-plane spins relax twice as fast as in-plane spins.

preprint2020arXiv

Anomalous Josephson Hall effect charge and transverse spin currents in superconductor/ferromagnetic insulator/superconductor junctions

Interfacial spin-orbit coupling in Josephson junctions offers an intriguing way to combine anomalous Hall and Josephson physics in a single device. We study theoretically how the superposition of both effects impacts superconductor/ferromagnetic insulator/superconductor junctions' transport properties. Transverse momentum-dependent skew tunneling of Cooper pairs through the spin-active ferromagnetic insulator interface creates sizable transverse Hall supercurrents, to which we refer as anomalous Josephson Hall effect currents. We generalize the Furusaki-Tsukada formula, which got initially established to quantify usual (tunneling) Josephson current flows, to evaluate the transverse current components and demonstrate that their amplitudes are widely adjustable by means of the spin-orbit coupling strengths or the superconducting phase difference across the junction. As a clear spectroscopic fingerprint of Josephson junctions, well-localized subgap bound states form around the interface. By analyzing the spectral properties of these states, we unravel an unambiguous correlation between spin-orbit coupling-induced asymmetries in their energies and the transverse current response, founding the currents' microscopic origin. Moreover, skew tunneling simultaneously acts like a transverse spin filter for spin-triplet Cooper pairs and complements the discussed charge current phenomena by their spin current counterparts. The junctions' universal spin-charge current cross ratios provide valuable possibilities to experimentally detect and characterize interfacial spin-orbit coupling.

preprint2020arXiv

Breakdown of the Hebel-Slichter effect in superconducting graphene due to the emergence of Yu-Shiba-Rusinov states at magnetic resonant scatterers

Employing analytical methods and quantum transport simulations we investigate the relaxation of quasiparticle spins in graphene proximitized by an $s$-wave superconductor in the presence of resonant magnetic and spin-orbit active impurities. Off resonance, the relaxation increases with decreasing temperature when electrons scatter off magnetic impurities---the Hebel-Slichter effect---and decreases when impurities have spin-orbit coupling. This distinct temperature~dependence (not present in the normal state) uniquely discriminates between the two scattering mechanisms. However, we show that the Hebel-Slichter picture breaks down at resonances. The emergence of Yu-Shiba-Rusinov bound states within the superconducting gap redistributes the spectral weight away from magnetic resonances. The result is opposite to the Hebel-Slichter expectation: the spin relaxation decreases with decreasing temperature. Our findings hold for generic $s$-wave superconductors with resonant magnetic impurities, but also, as we show, for resonant magnetic Josephson junctions.

preprint2020arXiv

Chiral Majorana fermions in graphene from proximity-induced superconductivity

We present a detailed theoretical study of chiral topological superconductor phases in proximity-superconducting graphene systems based on an effective model inspired by DFT simulations. Inducing s-wave superconductivity to quantum anomalous Hall effect systems leads to chiral topological superconductors. For out-of-plane magnetization we find topological superconducting phases with even numbers of chiral Majorana fermions per edge which is correlated to the opening of a nontrivial gap in the bulk system in the $\mathrm{ K}$-points and their connection under particle-hole symmetry. We show that in a quantum anomalous Hall insulator with in-plane magnetization and nontrivial gap opening at $\mathrm{M}$, the corresponding topological superconductor can be tuned to host only single chiral Majorana states at its edge which is promising for proposals exploiting such states for braiding operations.

preprint2020arXiv

Giant proximity exchange and valley splitting in transition metal dichalcogenide/$h\mathrm{BN}$/(Co, Ni) heterostructures

We investigate the proximity-induced exchange coupling in transition-metal dichalcogenides (TMDCs), originating from spin injector geometries composed of hexagonal boron-nitride (hBN) and ferromagnetic (FM) cobalt (Co) or nickel (Ni), from first-principles. We employ a minimal tight-binding Hamiltonian that captures the low energy bands of the TMDCs around K and K' valleys, to extract orbital, spin-orbit, and exchange parameters. The TMDC/hBN/FM heterostructure calculations show that due to the hBN buffer layer, the band structure of the TMDC is preserved, with an additional proximity-induced exchange splitting in the bands. We extract proximity exchange parameters in the 1--10 meV range, depending on the FM. The combination of proximity-induced exchange and intrinsic spin-orbit coupling (SOC) of the TMDCs, leads to a valley polarization, translating into magnetic exchange fields of tens of Tesla. The extracted parameters are useful for subsequent exciton calculations of TMDCs in the presence of a hBN/FM spin injector. Our calculated absorption spectra show large splittings for the exciton peaks; in the case of MoS$_2$/hBN/Co we find a value of about 8 meV, corresponding to about 50 Tesla external magnetic field in bare TMDCs. The reason lies in the band structure, where a hybridization with Co $d$ orbitals causes a giant valence band exchange splitting of more than 10 meV. Structures with Ni do not show any $d$ level hybridization features, but still sizeable proximity exchange and exciton peak splittings of around 2 meV are present in the TMDCs.

preprint2020arXiv

Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling

We investigate an effective model of proximity modified graphene (or symmetrylike materials) with broken time-reversal symmetry. We predict the appearance of quantum anomalous Hall phases by computing bulk band gap and Chern numbers for benchmark combinations of system parameters. Allowing for staggered exchange field enables quantum anomalous Hall effect in flat graphene with Chern number $C=1$. We explicitly show edge states in zigzag and armchair nanoribbons and explore their localization behavior. Remarkably, the combination of staggered intrinsic spin-orbit and uniform exchange coupling gives topologically protected (unlike in time-reversal systems) pseudohelical states, whose spin is opposite in opposite zigzag edges. Rotating the magnetization from out of plane to in plane makes the system trivial, allowing to control topological phase transitions. We also propose, using density functional theory, a material platform---graphene on Ising antiferromagnet MnPSe$_3$---to realize staggered exchange (pseudospin Zeeman) coupling.

preprint2019arXiv

First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$

The recently discovered two-dimensional (2D) magnetic insulator CrI$_3$ is an intriguing case for basic research and spintronic applications since it is a ferromagnet in the bulk, but an antiferromagnet in bilayer form, with its magnetic ordering amenable to external manipulations. Using first-principles quantum transport approach, we predict that injecting unpolarized charge current parallel to the interface of bilayer-CrI$_3$/monolayer-TaSe$_2$ van der Waals heterostructure will induce spin-orbit torque (SOT) and thereby driven dynamics of magnetization on the first monolayer of CrI$_3$ in direct contact with TaSe$_2$. By combining calculated complex angular dependence of SOT with the Landau-Lifshitz-Gilbert equation for classical dynamics of magnetization, we demonstrate that current pulses can switch the direction of magnetization on the first monolayer to become parallel to that of the second monolayer, thereby converting CrI$_3$ from antiferromagnet to ferromagnet while not requiring any external magnetic field. We explain the mechanism of this reversible current-driven nonequilibrium phase transition by showing that first monolayer of CrI$_3$ carries current due to evanescent wavefunctions injected by metallic transition metal dichalcogenide TaSe$_2$, while concurrently acquiring strong spin-orbit coupling (SOC) via such proximity effect, whereas the second monolayer of CrI$_3$ remains insulating. The transition can be detected by passing vertical read current through the vdW heterostructure, encapsulated by bilayer of hexagonal boron nitride and sandwiched between graphite electrodes, where we find tunneling magnetoresistance of $\simeq 240$%.

preprint2019arXiv

Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics

Spin-orbit coupling (SOC) is a key interaction in spintronics, allowing an electrical control of spin or magnetization and, vice versa, a magnetic control of electrical current. However, recent advances have revealed much broader implications of SOC that is also central to the design of topological states, including topological insulators, skyrmions, and Majorana fermions, or to overcome the exclusion of two-dimensional ferro-magnetism expected from the Mermin-Wagner theorem. SOC and the resulting emergent interfacial spin-orbit fields are simply realized in junctions through structural inversion asymmetry, while the anisotropy in magnetoresistance (MR) allows for their experimental detection. Surprisingly, we demonstrate that an all-epitaxial ferromagnet/MgO/metal junction with only a negligible MR anisotropy undergoes a remarkable transformation below the superconducting transition temperature of the metal. The superconducting junction has a three orders of magnitude higher MR anisotropy and supports the formation of spin-triplet superconductivity, crucial for superconducting spintronics, and topologically-protected quantum computing. Our findings call for revisiting the role of SOC in other systems which, even when it seems negligible in the normal state, could have a profound influence on the superconducting response.

preprint2016arXiv

Enhanced spin-orbit coupling in core/shell nanowires

The spin-orbit coupling (SOC) in semiconductors is strongly influenced by structural asymmetries, as prominently observed in bulk crystal structures that lack inversion symmetry. Here, we study an additional effect on the SOC: the asymmetry induced by the large interface area between a nanowire core and its surrounding shell. Our experiments on purely wurtzite GaAs/AlGaAs core/shell nanowires demonstrate optical spin injection into a single free-standing nanowire and determine the effective electron g-factor of the hexagonal GaAs wurtzite phase. The spin relaxation is highly anisotropic in time-resolved micro-photoluminescence measurements on single nanowires, showing a significant increase of spin relaxation in external magnetic fields. This behavior is counterintuitive compared to bulk wurtzite crystals. We present a model for the observed electron spin dynamics highlighting the dominant role of the interface-induced SOC in these core/shell nanowires. This enhanced SOC may represent an interesting tuning parameter for the implementation of spin-orbitronic concepts in semiconductor-based structures.

preprint2016arXiv

Excitonic Stark effect in MoS$_2$ monolayers

We theoretically investigate excitons in MoS$_2$ monolayers in an applied in-plane electric field. Tight-binding and Bethe-Salpeter equation calculations predict a quadratic Stark shift, of the order of a few meV for fields of 10 V/$μ$m, in the linear absorption spectra. The spectral weight of the main exciton peaks decreases by a few percent with an increasing electric field due to the exciton field ionization into free carriers as reflected in the exciton wave functions. Subpicosecond exciton decay lifetimes at fields of a few tens of V/$μ$m could be utilized in solar energy harvesting and photodetection. We find simple scaling relations of the exciton binding, radius, and oscillator strength with the dielectric environment and an electric field, which provides a path to engineering the MoS$_2$ electro-optical response.

preprint2016arXiv

First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors

We employ first-principles techniques tailored to properly describe semiconductors (modified Becke-Johnson potential added to the exchange-correlation functional), to obtain the electronic band structures of both the zinc-blende and wurtzite phases of GaAs, GaSb, InAs, and InSb. We extract the spin-orbit fields for the relevant valence and conduction bands at zone center, by fitting the spin-splittings resulting from the lack of space inversion symmetry of these bulk crystal structures, to known functional forms---third-order polynomials. We also determine the orientations of the spin-orbit vector fields (for conduction bands) and the average spins (valence bands) in the momentum space. We describe the dependence of the spin-orbit parameters on the cation and anion atomic weights. These results should be useful for spin transport, spin relaxation, and spin optical orientation modeling of semiconductor heterostructures, as well as for realistic studies of semiconductor-based Majorana nanowires, for which accurate values of spin-orbit couplings are needed.

preprint2016arXiv

Magnetotransport signatures of the proximity exchange and spin-orbit couplings in graphene

Graphene on an insulating ferromagnetic substrate---ferromagnetic insulator or ferromagnetic metal with a tunnel barrier---is expected to exhibit giant proximity exchange and spin-orbit couplings. We use a realistic transport model of charge-disorder scattering and solve the linearized Boltzmann equation numerically exactly for the anisotropic Fermi contours of modified Dirac electrons to find magnetotransport signatures of these proximity effects: proximity anisotropic magnetoresistance, inverse spin-galvanic effect, and the planar Hall resistivity. We establish the corresponding anisotropies due to the exchange and spin-orbit couplings, with respect to the magnetization orientation. We also present parameter maps guiding towards optimal regimes for observing transport magnetoanisotropies in proximity graphene.

preprint2016arXiv

Realistic multiband k.p approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase

Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of wurtzite crystal phase. Despite the reports in literature of ab initio band structures for these wurtzite compounds, we still lack effective multiband models and parameter sets that can be simply used to investigate physical properties of such systems, for instance, under quantum confinement effects. In order to address this deficiency, in this study we calculate the ab initio band structure of bulk InAs and InP in wurtzite phase and develop an 8$\times$8 k.p Hamiltonian to describe the energy bands around $Γ$ point. We show that our k.p model is robust and can be fitted to describe the important features of the ab initio band structure. The correct description of the spin splitting effects that arise due to the lack of inversion symmetry in wurtzite crystals, is obtained with the $k$-dependent spin-orbit term in the Hamiltonian, often neglected in the literature. All the energy bands display a Rashba-like spin texture for the in-plane spin expectation value. We also provide the density of states and the carrier density as functions of the Fermi energy. Alternatively, we show an analytical description of the conduction band, valid close to $Γ$ point. The same fitting procedure is applied to the 6$\times$6 valence band Hamiltonian. However, we find that the most reliable approach is the 8$\times$8 k.p Hamiltonian for both compounds. The k.p Hamiltonians and parameter sets that we develop in this paper provide a reliable theoretical framework that can be easily applied to investigate electronic, transport, optical, and spin properties of InAs- and InP-based nanostructures.

preprint2016arXiv

Resonant scattering by magnetic impurities as a model for spin relaxation in bilayer graphene

We propose that the observed spin-relaxation in bilayer graphene is due to resonant scattering by magnetic impurities. We analyze a resonant scattering model due to adatoms on both dimer and non-dimer sites, finding that only the former give narrow resonances at the charge neutrality point. Opposite to single-layer graphene, the measured spin-relaxation rate in graphene bilayer increases with carrier density. Although it has been commonly argued that a different mechanism must be at play for the two structures, our model explains this behavior rather naturally in terms of different broadening scales for the same underlying resonant processes. Not only our results---using robust and first-principles inspired parameters---agree with experiment, they also predict an experimentally testable sharp decrease of the spin-relaxation rate at high carrier densities.

preprint2016arXiv

Spin-orbit coupling in methyl functionalized graphene

We present first-principles calculations of the electronic band structure and spin-orbit effects in graphene functionalized with methyl molecules in dense and dilute limits. The dense limit is represented by a 2$\times$2 graphene supercell functionalized with one methyl admolecule. The calculated spin-orbit splittings are up to $0.6$ meV. The dilute limit is deduced by investigating a large, 7$\times$7, supercell with one methyl admolecule. The electronic band structure of this supercell is fitted to a symmetry-derived effective Hamiltonian, allowing us to extract specific hopping parameters including intrinsic, Rashba, and PIA (pseudospin inversion asymmetry) spin-orbit terms. These proximity-induced spin-orbit parameters have magnitudes of about 1 meV, giant compared to pristine graphene whose intrinsic spin-orbit coupling is about 10 $μ$eV. We find that the origin of this giant local enhancement is the $sp^3$ corrugation and the breaking of local pseudospin inversion symmetry, as in the case of hydrogen adatoms. Also similar to hydrogen, methyl acts as a resonant scatterer, with a narrow resonance peak near the charge neutrality point. We also calculate STM-like images showing the local charge densities at different energies around methyl on graphene.

preprint2016arXiv

Theory of electronic and spin-orbit proximity effects in graphene on Cu(111)

We study orbital and spin-orbit proximity effects in graphene adsorbed to the Cu(111) surface by means of density functional theory (DFT). The proximity effects are caused mainly by the hybridization of graphene $π$ and copper d orbitals. Our electronic structure calculations agree well with the experimentally observed features. We carry out a graphene-Cu(111) distance dependent study to obtain proximity orbital and spin-orbit coupling parameters, by fitting the DFT results to a robust low energy model Hamiltonian. We find a strong distance dependence of the Rashba and intrinsic proximity induced spin-orbit coupling parameters, which are in the meV and hundreds of $μ$eV range, respectively, for experimentally relevant distances. The Dirac spectrum of graphene also exhibits a proximity orbital gap, of about 20 meV. Furthermore, we find a band inversion within the graphene states accompanied by a reordering of spin and pseudospin states, when graphene is pressed towards copper.

preprint2016arXiv

Theory of proximity-induced exchange coupling in graphene on hBN/(Co, Ni)

We perform systematic first-principles calculations of the proximity exchange coupling, induced by cobalt (Co) and nickel (Ni) in graphene, via a few (up to three) layers of hexagonal boron nitride (hBN). We find that the induced spin splitting of the graphene bands is of the order of 10 meV for a monolayer of hBN, decreasing in magnitude but alternating in sign by adding each new insulating layer. We find that the proximity exchange can be giant if there is a resonant $d$ level of the transition metal close to the Dirac point. Our calculations suggest that this effect could be present in Co heterostructures, in which a $d$ level strongly hybridizes with the valence-band orbitals of graphene. Since this hybridization is spin dependent, the proximity spin splitting is unusually large, about 10 meV even for two layers of hBN. An external electric field can change the offset of the graphene and transition-metal orbitals and can lead to a reversal of the sign of the exchange parameter. This we predict to happen for the case of two monolayers of hBN, enabling electrical control of proximity spin polarization (but also spin injection) in graphene/hBN/Co structures. Nickel-based heterostructures show weaker proximity effects than cobalt heterostructures. We introduce two phenomenological models to describe the first-principles data. The minimal model comprises the graphene (effective) $p_z$ orbitals and can be used to study transport in graphene with proximity exchange, while the $p_z$-$d$ model also includes hybridization with $d$ orbitals, which is important to capture the giant proximity exchange. Crucial to both models is the pseudospin-dependent exchange coupling, needed to describe the different spin splittings of the valence and conduction bands.

preprint2015arXiv

Graphene on transition-metal dichalcogenides: a platform for proximity spin-orbit physics and optospintronics

Hybrids of graphene and two dimensional transition metal dichalcogenides (TMDC) have the potential to bring graphene spintronics to the next level. As we show here by performing first-principles calculations of graphene on monolayer MoS$_2$, there are several advantages of such hybrids over pristine graphene. First, Dirac electrons in graphene exhibit a giant global proximity spin-orbit coupling, without compromising the semimetallic character of the whole system at zero field. Remarkably, these spin-orbit effects can be very accurately described by a simple effective Hamiltonian. Second, the Fermi level can be tuned by a transverse electric field to cross the MoS$_2$ conduction band, creating a system of coupled massive and massles electron gases. Both charge and spin transport in such systems should be unique. Finally, we propose to use graphene/TMDC structures as a platform for optospintronics, in particular for optical spin injection into graphene and for studying spin transfer between TMDC and graphene.

preprint2015arXiv

Graphene Spintronics

The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material, as well as graphene-based spintronic devices. Here we review the experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene. Future research in graphene spintronics will need to address the development of applications such as spin transistors and spin logic devices, as well as exotic physical properties including topological states and proximity-induced phenomena in graphene and other 2D materials.

preprint2015arXiv

k.p theory for two-dimensional transition metal dichalcogenide semiconductors

We present $\mathbf{k}\cdotp\mathbf{p}$ Hamiltonians parametrised by {\it ab initio} density functional theory calculations to describe the dispersion of the valence and conduction bands at their extrema (the $K$, $Q$, $Γ$, and $M$ points of the hexagonal Brillouin zone) in atomic crystals of semiconducting monolayer transition metal dichalcogenides. We review the parametrisation of the essential parts of the $\mathbf{k}\cdotp\mathbf{p}$ Hamiltonians for MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, including the spin-splitting and spin-polarisation of the bands, and we discuss the vibrational properties of these materials. We then use $\mathbf{k}\cdotp\mathbf{p}$ theory to analyse optical transitions in two-dimensional transition metal dichalcogenides over a broad spectral range that covers the Van Hove singularities in the band structure (the $M$ points). We also discuss the visualisation of scanning tunnelling microscopy maps.

preprint2015arXiv

Magnetoanisotropic Andreev Reflection in Ferromagnet/Superconductor Junctions

Andreev reflection spectroscopy of ferromagnet/superconductor (FS) junctions is an important probe of spin polarization. We theoretically investigate spin-polarized transport in FS junctions in the presence of Rashba and Dresselhaus interfacial spin-orbit fields and show that Andreev reflection can be controlled by changing the magnetization orientation. We predict a giant in- and out-of-plane magnetoanisotropy of the junction conductance. If the ferromagnet is highly spin polarized---in the half-metal limit---the magnetoanisotropic Andreev reflection depends universally on the spin-orbit fields only. Our results show that Andreev reflection spectroscopy can be used for sensitive probing of interfacial spin-orbit fields in FS junction.

preprint2015arXiv

Probing topological transitions in HgTe/CdTe quantum wells by magneto-optical measurements

In two-dimensional topological insulators, such as inverted HgTe/CdTe quantum wells, helical quantum spin Hall (QSH) states persist even at finite magnetic fields below a critical magnetic field $B_\mathrm{c}$, above which only quantum Hall (QH) states can be found. Using linear-response theory, we theoretically investigate the magneto-optical properties of inverted HgTe/CdTe quantum wells, both for infinite two-dimensional and finite-strip geometries, and possible signatures of the transition between the QSH and QH regimes. In the absorption spectrum, several peaks arise due to non-equidistant Landau levels in both regimes. However, in the QSH regime, we find an additional absorption peak at low energies in the finite-strip geometry. This peak arises due to the presence of edge states in this geometry and persists for any Fermi level in the QSH regime, while in the QH regime the peak vanishes if the Fermi level is situated in the bulk gap. Thus, by sweeping the gate voltage, it is possible to experimentally distinguish between the QSH and QH regimes due to this signature. Moreover, we investigate the effect of spin-orbit coupling and finite temperature on this measurement scheme.

preprint2015arXiv

Spin-orbit coupling in fluorinated graphene

We report on theoretical investigations of the spin-orbit coupling effects in fluorinated graphene. First-principles density functional calculations are performed for the dense and dilute adatom coverage limits. The dense limit is represented by the single-side semifluorinated graphene, which is a metal with spin-orbit splittings of about 10 meV. To simulate the effects of a single adatom, we also calculate the electronic structure of a $10 \times 10$ supercell, with one fluorine atom in the top position. Since this dilute limit is useful to study spin transport and spin relaxation, we also introduce a realistic effective hopping Hamiltonian, based on symmetry considerations, which describes the supercell bands around the Fermi level. We provide the Hamiltonian parameters which are best fits to the first-principles data. We demonstrate that, unlike for the case of hydrogen adatoms, fluorine's own spin-orbit coupling is the principal cause of the giant induced local spin-orbit coupling in graphene. The $sp^3$ hybridization induced transfer of spin-orbit coupling from graphene's $σ$ bonds, important for hydrogenated graphene, contributes much less. Furthermore, the magnitude of the induced spin-orbit coupling due to fluorine adatoms is about $1000$ times more than that of pristine graphene, and 10 times more than that of hydrogenated graphene. Also unlike hydrogen, the fluorine adatom is not a narrow resonant scatterer at the Dirac point. The resonant peak in the density of states of fluorinated graphene in the dilute limit lies 260 meV below the Dirac point. The peak is rather broad, about 300 meV, making the fluorine adatom only a weakly resonant scatterer.

preprint2015arXiv

Theory of spin-orbit induced spin relaxation in functionalized graphene

We perform a comparative study of the spin relaxation by spin-orbit coupling induced from adatoms (hydrogen and fluorine) in graphene. Two methods are applied, giving consistent results: a full quantum transport simulation of a graphene nanoribbon, and a T-matrix calculation using Green's functions for a single adatom in graphene. For hydrogenated graphene the dominant spin-orbit term for spin relaxation is PIA, the hitherto neglected interaction due to pseudospin inversion asymmetry. In contrast, in fluorinated graphene PIA and Rashba couplings destructively interfere, reducing the total spin relaxation rate. In this case we also predict a strong deviation from the expected 2:1 spin relaxation anisotropy for out- and in-plane spin orientations. Our findings should be useful to benchmark spin relaxation and weak localization experiments of functionalized graphene.

preprint2015arXiv

Trivial and inverted Dirac bands, and emergence of quantum spin Hall states in graphene on transition-metal dichalcogenides

Proximity orbital and spin-orbital effects of graphene on monolayer transition-metal dichalcogenides (TMDCs) are investigated from first-principles. The Dirac band structure of graphene is found to lie within the semiconducting gap of TMDCs for sulfides and selenides, while it merges with the valence band for tellurides. In the former case the proximity-induced staggered potential gaps and spin-orbit couplings (all on the meV scale) of the Dirac electrons are established by fitting to a phenomenological effective Hamiltonian. While graphene on MoS$_2$, MoSe$_2$, and WS$_2$ has a topologically trivial band structure, graphene on WSe$_2$ exhibits inverted bands. Using a realistic tight-binding model we find topologically protected helical edge states for graphene zigzag nanoribbons on WSe$_2$, demonstrating the quantum spin Hall effect. This model also features "half-topological states", which are protected against time-reversal disorder on one edge only.

preprint2014arXiv

Anisotropic optical properties of Fe/GaAs(001) nanolayers from first principles

We investigate the anisotropy of the optical properties of thin Fe films on GaAs(001) from first-principles calculations. Both intrinsic and magnetization-induced anisotropy are covered by studying the system in the presence of spin-orbit coupling and external magnetic fields. We use the linearized augmented plane wave method, as implemented in the WIEN2k density functional theory code, to show that the $C_{2v}$ symmetric anisotropy of the spin-orbit coupling fields at the Fe/GaAs(001) interface manifests itself in the corresponding anisotropy of the optical conductivity and the polar magneto-optical Kerr effect. While their magnetization-induced anisotropy is negligible, the intrinsic anisotropy of the optical properties is significant and reflects the underlying $C_{2v}$ symmetry of the Fe/GaAs(001) interface. This suggests that the effects of anisotropic spin-orbit coupling fields in experimentally relevant Fe/GaAs(001) slabs can be studied by purely optical means.

preprint2014arXiv

Electric control of tunneling energy in graphene double dots

We theoretically investigate the spectrum of a single electron double quantum dot, defined by top gates in a graphene with a substrate induced gap. We examine the effects of electric and magnetic fields on the spectrum of localized states, focusing on the tunability of the inter-dot coupling. We find that the substrate induced gap allows for electrostatic control, with some limitations that for a fixed inter-dot distance, the inter-dot coupling can not be made arbitrarily small due to the Klein tunneling. On the other hand, the proximity of the valence band in graphene allows for new regimes, such as an $npn$ double dot, which have no counterparts in GaAs.

preprint2013arXiv

Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC

We present results of non-local and three terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 degrees Celsius for 15 minutes in vacuum. The values of spin relaxation length L_s and spin relaxation time tau_s obtained after annealing are reduced by a factor 2 and 4, respectively, compared to those before annealing. An apparent discrepancy between spin diffusion constant D_s and charge diffusion constant D_c can be resolved by investigating the temperature dependence of the g-factor, which is consistent with a model for paramagnetic magnetic moments.

preprint2013arXiv

Effects of optical and surface polar phonons on the optical conductivity of doped graphene

Using the Kubo linear response formalism, we study the effects of intrinsic graphene optical and surface polar phonons (SPPs) on the optical conductivity of doped graphene. We find that inelastic electron-phonon scattering contributes significantly to the phonon-assisted absorption in the optical gap. At room temperature, this midgap absorption can be as large as 20-25% of the universal ac conductivity for graphene on polar substrates due to strong electron-SPP coupling. The midgap absorption, moreover, strongly depends on the substrates and doping levels used. With increasing temperature, the midgap absorption increases, while the Drude peak, on the other hand, becomes broader as inelastic electron-phonon scattering becomes more probable. Consequently, the Drude weight decreases with increasing temperature.

preprint2013arXiv

Gate-defined coupled quantum dots in topological insulators

We consider electrostatically coupled quantum dots in topological insulators, otherwise confined and gapped by a magnetic texture. By numerically solving the (2+1) Dirac equation for the wave packet dynamics, we extract the energy spectrum of the coupled dots as a function of bias-controlled coupling and an external perpendicular magnetic field. We show that the tunneling energy can be controlled to a large extent by the electrostatic barrier potential. Particularly interesting is the coupling via Klein tunneling through a resonant valence state of the barrier. The effective three-level system nicely maps to a model Hamiltonian, from which we extract the Klein coupling between the confined conduction and valence dots levels. For large enough magnetic fields Klein tunneling can be completely blocked due to the enhanced localization of the degenerate Landau levels formed in the quantum dots.

preprint2013arXiv

Integrating MBE materials with graphene to induce novel spin-based phenomena

Magnetism in graphene is an emerging field that has received much theoretical attention. In particular, there have been exciting predictions for induced magnetism through proximity to a ferromagnetic insulator as well as through localized dopants and defects. Here, we discuss our experimental work using molecular beam epitaxy (MBE) to modify the surface of graphene and induce novel spin-dependent phenomena. First, we investigate the epitaxial growth the ferromagnetic insulator EuO on graphene and discuss possible scenarios for realizing exchange splitting and exchange fields by ferromagnetic insulators. Second, we investigate the properties of magnetic moments in graphene originating from localized p_z-orbital defects (i.e. adsorbed hydrogen atoms). The behavior of these magnetic moments is studied using non-local spin transport to directly probe the spin-degree of freedom of the defect-induced states. We also report the presence of enhanced electron g-factors caused by the exchange fields present in the system. Importantly, the exchange field is found to be highly gate dependent, with decreasing g-factors with increasing carrier densities.

preprint2013arXiv

Magnetic control of spin-orbit fields: a first-principles study of Fe/GaAs junctions

The microscopic structure of spin-orbit fields for the technologically important Fe/GaAs interface is uncovered from first principles. A symmetry based method allows to obtain the spin-orbit fields---both their magnitude and orientation---for a generic Bloch state, from the electronic band structure for any in-plane magnetization orientation. It is demonstrated that the spin-orbit fields depend not only on the electric field across the interface, but also surprisingly strongly on the Fe magnetization orientation, opening prospects for their magnetic control. These results give important clues in searching for spin-orbit transport and optical phenomena in ferromagnetic/nonmagnetic systems.

preprint2013arXiv

Magneto-optical conductivity of graphene on polar substrates

We theoretically study the effect of polar substrates on the magneto-optical conductivity of doped monolayer graphene, where we particularly focus on the role played by surface polar phonons (SPPs). Our calculations suggest that polaronic shifts of the intra- and interband absorption peaks can be significantly larger for substrates with strong electron-SPP coupling than those in graphene on non-polar substrates, where only intrinsic graphene optical phonons with much higher energies contribute. Electron-phonon scattering and phonon-assisted transitions are, moreover, found to result in a loss of spectral weight at the absorption peaks. The strength of these processes is strongly temperature-dependent and with increasing temperatures the magneto-optical conductivity becomes increasingly affected by polar substrates, most noticeably in polar substrates with small SPP energies such as HfO$_2$. The inclusion of a Landau level-dependent scattering rate to account for Coulomb impurity scattering does not alter this qualitative picture, but can play an important role in determining the lineshape of the absorption peaks, especially at low temperatures, where impurity scattering dominates.

preprint2013arXiv

Optical conductivity of hydrogenated graphene from first principles

We investigate the effect of hydrogen coverage on the optical conductivity of single-side hydrogenated graphene from first principles calculations. To account for different degrees of uniform hydrogen coverage we calculate the complex optical conductivity for graphene supercells of various sizes, each containing a single additional hydrogen atom. We use the linearized augmented plane wave (LAPW) method, as implemented in the WIEN2k density functional theory code, to show that the hydrogen coverage strongly influences the complex optical conductivity and thus the optical properties, such as absorption, of hydrogenated graphene. We find that the optical conductivity of graphene in the infrared, visible, and ultraviolet range has different characteristic features depending on the degree of hydrogen coverage. This opens up new possibilities to tailor the optical properties of graphene by reversible hydrogenation, and to determine the hydrogen coverage of hydrogenated graphene samples in the experiment by contact-free optical absorption measurements.

preprint2013arXiv

Spin Hot Spots in Single-Electron GaAs-based Quantum Dots

Spin relaxation of a single electron in a weakly coupled double quantum dot is calculated numerically. The phonon assisted spin flip is allowed by the presence of the linear and cubic spin-orbit couplings and nuclear spins. The rate is calculated as a function of the interdot coupling, the magnetic field strength and orientation, and the dot bias. In an in-plane magnetic field, the rate is strongly anisotropic with respect to the magnetic field orientation, due to the anisotropy of the spin-orbit interactions. The nuclear spin influence is negligible. In an out-of-plane field, the nuclear spins play a more important role due selection rules imposed on the spin-orbit couplings. Our theory shows a very good agreement with data measured in [Srinivasa, et al., PRL 110, 196803 (2013)], allowing us to extract information on the linear spin-orbit interactions strengths in that experiment. We estimate that they correspond to spin-orbit lengths of about 5-15 $μ$m.

preprint2013arXiv

Spin relaxation mechanism in graphene: resonant scattering by magnetic impurities

It is proposed that the observed small (100 ps) spin relaxation time in graphene is due to resonant scattering by local magnetic moments. At resonances, magnetic moments behave as spin hot spots: the spin-flip scattering rates are as large as the spin-conserving ones, as long as the exchange interaction is greater than the resonance width. Smearing of the resonance peaks by the presence of electron-hole puddles gives quantitative agreement with experiment, for about 1 ppm of local moments. While the local moments can come from a variety of sources, we specifically focus on hydrogen adatoms. We perform first-principles supercell calculations and introduce an effective Hamiltonian to obtain realistic input parameters for our mechanism.

preprint2013arXiv

Spin-orbit coupling in hydrogenated graphene

First-principles calculations of the spin-orbit coupling in graphene with hydrogen adatoms in dense and dilute limits are presented. The chemisorbed hydrogen induces a giant local enhancement of spin-orbit coupling due to $sp^3$ hybridization which depends strongly on the local lattice distortion. Guided by the reduced symmetry and the local structure of the induced dipole moments we use group theory to propose realistic minimal Hamiltonians that reproduce the relevant spin-orbit effects for both single-side semihydrogenated graphene (graphone) and for a single hydrogen adatom in a large supercell. The principal linear spin-orbit band splittings are driven by the breaking of the local pseudospin inversion symmetry and the emergence of spin flips on the same sublattice.

preprint2013arXiv

Tunneling Anisotropic Thermopower and Seebeck Effects in Magnetic Tunnel Junctions

The Tunneling Anisotropic Magneto-Thermopower (TAMT) and the Tunneling Anisotropic Spin-Seebeck (TASS) effects are studied for a magnetic tunnel junction (MTJ) composed of a ferromagnetic electrode, a zinc-blende semiconductor and a normal metal. We develop a theoretical model for describing the dependence of a thermally induced tunneling current across the MTJ on the in-plane orientation of the magnetization in the ferromagnetic layer. The model accounts for the specific Bychkov-Rashba and Dresselhaus spin-orbit interactions present in these systems, which are responsible for the $C_{2v}$ symmetry we find in the TAMT and the TASS.

preprint2013arXiv

Tunneling Magneto-Thermopower in Magnetic Tunnel Junctions

Thermally induced spin-dependent transport across magnetic tunnel junctions is theoretically investigated. We analyze the thermal analog of Slonczewski's model (as well as its limiting case---Julliere's model) of tunneling magnetoresistance and obtain analytical expressions for the junction thermopower and the tunneling magneto-thermopower (TMT). The analytical model is tested numerically for the special case of an Al$_2$O$_3$-based MTJ, for which we analyze the dependence of the thermopower and TMT on the relative magnetization orientations, as well as on the barrier height and thickness. We show that at a certain barrier height TMT vanishes, separating the region of positive and negative TMT. As its electrical prototype, this thermal spin transport model should serve as a phenomenological benchmark for analyzing experimental and first-principles calculations of thermopower in magnetic tunnel junctions. The analytical expressions can be used as a first estimate of the magneto-thermopower of the junctions using {\it ab initio} band structure data of the junction ferromagnets.

preprint2012arXiv

Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents

Hydrogen adatoms are shown to generate magnetic moments inside single layer graphene. Spin transport measurements on graphene spin valves exhibit a dip in the non-local spin signal as a function of applied magnetic field, which is due to scattering (relaxation) of pure spin currents by exchange coupling to the magnetic moments. Furthermore, Hanle spin precession measurements indicate the presence of an exchange field generated by the magnetic moments. The entire experiment including spin transport is performed in an ultrahigh vacuum chamber, and the characteristic signatures of magnetic moment formation appear only after hydrogen adatoms are introduced. Lattice vacancies also demonstrate similar behavior indicating that the magnetic moment formation originates from pz-orbital defects.

preprint2012arXiv

Magnetic properties of HgTe quantum wells

Using analytical formulas as well as a finite-difference scheme, we investigate the magnetic field dependence of the energy spectra and magnetic edge states of HgTe/CdTe-based quantum wells in the presence of perpendicular magnetic fields and hard walls, for the band-structure parameters corresponding to the normal and inverted regimes. Whereas one cannot find counterpropagating, spin-polarized states in the normal regime, below the crossover point between the uppermost (electron-like) valence and lowest (hole-like) conduction Landau levels, one can still observe such states at finite magnetic fields in the inverted regime, although these states are no longer protected by time-reversal symmetry. Furthermore, the bulk magnetization and susceptibility in HgTe quantum wells are studied, in particular their dependence on the magnetic field, chemical potential, and carrier densities. We find that for fixed chemical potentials as well as for fixed carrier densities, the magnetization and magnetic susceptibility in both the normal and the inverted regimes exhibit de Haas-van Alphen oscillations, whose amplitude decreases with increasing temperature. Moreover, if the band structure is inverted, the ground-state magnetization (and consequently also the ground-state susceptibility) is discontinuous at the crossover point between the uppermost valence and lowest conduction Landau levels. At finite temperatures and/or doping, this discontinuity is canceled by the contribution from the electrons and holes and the total magnetization and susceptibility are continuous. In the normal regime, this discontinuity of the ground-state magnetization does not arise and the magnetization is continuous for zero as well as finite temperatures.

preprint2012arXiv

Spin-orbit coupled particle in a spin bath

We consider a spin-orbit coupled particle confined in a quantum dot in a bath of impurity spins. We investigate the consequences of spin-orbit coupling on the interactions that the particle mediates in the spin bath. We show that in the presence of spin-orbit coupling, the impurity-impurity interactions are no longer spin-conserving. We quantify the degree of this symmetry breaking and show how it relates to the spin-orbit coupling strength. We identify several ways how the impurity ensemble can in this way relax its spin by coupling to phonons. A typical resulting relaxation rate for a self-assembled Mn-doped ZnTe quantum dot populated by a hole is 1 $μ$s. We also show that decoherence arising from nuclear spins in lateral quantum dots is still removable by a spin echo protocol, even if the confined electron is spin-orbit coupled.

preprint2012arXiv

Theory of Spin Relaxation in Two-Electron Lateral Coupled Quantum Dots

A global quantitative picture of the phonon-induced two-electron spin relaxation in GaAs double quantum dots is presented using highly accurate numerical calculations. Wide regimes of interdot coupling, magnetic field magnitude and orientation, and detuning are explored in the presence of a nuclear bath. Most important, the unusually strong magnetic anisotropy of the singlet-triplet relaxation can be controlled by detuning switching the principal anisotropy axes: a protected state becomes unprotected upon detuning, and vice versa. It is also established that nuclear spins can dominate spin relaxation for unpolarized triplets even at high magnetic fields, contrary to common belief. These findings are central to designing quantum dots geometries for spin-based quantum information processing with minimal environmental impact.

preprint2012arXiv

Theory of Spin Relaxation in Two-Electron Lateral Coupled Si/SiGe Quantum Dots

Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are investigated for experimentally relevant parameters, the interdot coupling, the magnetic field magnitude and orientation, and the detuning. We calculate relaxation rates for zero and finite temperatures (100 mK), concluding that our findings for zero temperature remain qualitatively valid also for 100 mK. We confirm the same anisotropic switch of the axis of prolonged spin lifetime with varying detuning as recently predicted in GaAs. Conditions for possibly hyperfine-dominated relaxation are much more stringent in Si than in GaAs. For experimentally relevant regimes, the spin-orbit coupling, although weak, is the dominant contribution, yielding anisotropic relaxation rates of at least two order of magnitude lower than in GaAs.

preprint2012arXiv

Theory of spin-orbit coupling in bilayer graphene

Theory of spin-orbit coupling in bilayer graphene is presented. The electronic band structure of the AB bilayer in the presence of spin-orbit coupling and a transverse electric field is calculated from first-principles using the linearized augmented plane wave method implemented in the WIEN2k code. The first-principles results around the K points are fitted to a tight-binding model. The main conclusion is that the spin-orbit effects in bilayer graphene derive essentially from the single-layer spin-orbit coupling which comes almost solely from the d orbitals. The intrinsic spin-orbit splitting (anticrossing) around the K points is about 24μeV for the low-energy valence and conduction bands, which are closest to the Fermi level, similarly as in the single layer graphene. An applied transverse electric field breaks space inversion symmetry and leads to an extrinsic (also called Bychkov-Rashba) spin-orbit splitting. This splitting is usually linearly proportional to the electric field. The peculiarity of graphene bilayer is that the low-energy bands remain split by 24μeV independently of the applied external field. The electric field, instead, opens a semiconducting band gap separating these low-energy bands. The remaining two high-energy bands are spin-split in proportion to the electric field; the proportionality coefficient is given by the second intrinsic spin-orbit coupling, whose value is 20μeV. All the band-structure effects and their spin splittings can be explained by our tight-binding model, in which the spin-orbit Hamiltonian is derived from symmetry considerations. The magnitudes of intra- and interlayer couplings---their values are similar to the single-layer graphene ones---are determined by fitting to first-principles results.

preprint2011arXiv

Charge pumping by magnetization dynamics in magnetic and semi-magnetic tunnel junctions with interfacial Rashba or bulk extrinsic spin-orbit couplings

We develop a time-dependent nonequilibrium Green function (NEGF) approach to the problem of spin pumping by precessing magnetization in one of the ferromagnetic layers within F/I/F magnetic tunnel junctions (MTJs) or F/I/N semi-MTJs in the presence of intrinsic Rashba spin-orbit coupling (SOC) at the F/I interface or the extrinsic SOC in the bulk of F layers of finite thickness (F-ferromagnet; N-normal metal; I-insulating barrier). To express the time-averaged pumped charge current, or the corresponding dc voltage signal in open circuits that was measured in recent experiments on semi-MTJs [T. Moriyama et al., Phys. Rev. Lett. 100, 067602 (2008)], we construct a novel solution for the double-time-Fourier-transformed NEGFs. The two energy arguments of NEGFs in this representation are connected by the Floquet theorem describing multiphoton emission and absorption processes. Within this fully quantum-mechanical treatment of the conduction electrons, we find that: (i) only in the presence of the interfacial Rashba SOC the non-zero dc pumping voltage in F/I/N semi-MTJ can emerge at the adiabatic level (i.e., proportional to microwave frequency); (ii) a unique signature of this charge pumping phenomenon, which disappears if Rashba SOC is not located with the precessing F layer, is dc pumping voltage that changes sign as the function of the precession cone angle; (iii) unlike standard spin pumping in the absence of SOCs, where one emitted or absorbed microwave photon is sufficient to match the exact solution in the frame rotating with the magnetization, the presence of the Rashba SOC requires to take into account up to ten photons in order to reach the asymptotic value of pumped charge current; (iv) disorder within F/I/F MTJs can enhance the dc pumping voltage in the quasiballistic transport regime; ...

preprint2011arXiv

Non-linear spin to charge conversion in mesoscopic structures

Motivated by recent experiments [Vera-Marun et al., arXiv:1109.5969], we formulate a non-linear theory of spin transport in quantum coherent conductors. We show how a mesoscopic constriction with energy-dependent transmission can convert a spin current injected by a spin accumulation into an electric signal, relying neither on magnetic nor exchange fields. When the transmission through the constriction is spin-independent, the spin-charge coupling is non-linear, with an electric signal that is quadratic in the accumulation. We estimate that gated mesoscopic constrictions have a sensitivity that allows to detect accumulations much smaller than a percent of the Fermi energy.

preprint2011arXiv

Theory of Single Electron Spin Relaxation in Si/SiGe Lateral Coupled Quantum Dots

We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum dots, in in-plane and perpendicular magnetic fields. The deformation potential of acoustic phonons is taken into account for both transverse and longitudinal polarizations and their contributions to the total relaxation rate are discussed with respect to the dilatation and shear potential constants. We find that in single dots the spin relaxation rate scales approximately with the seventh power of the magnetic field, in line with a recent experiment. In double dots the relaxation rate is much more sensitive to the dot spectrum structure, as it is often dominated by a spin hot spot. The anisotropy of the spin-orbit interactions gives rise to easy passages, special directions of the magnetic field for which the relaxation is strongly suppressed. Quantitatively, the spin relaxation rates in Si are typically 2 orders of magnitude smaller than in GaAs due to the absence of the piezoelectric phonon potential and generally weaker spin-orbit interactions.

preprint2011arXiv

Theory of the ac spin-valve effect

The spin-valve complex magnetoimpedance of symmetric ferromagnet/normal metal/ferromagnet junctions is investigated within the drift-diffusion (standard) model of spin injection. The ac magnetoresistance---the real part difference of the impedances of the parallel and antiparallel magnetization configurations---exhibits an overall damped oscillatory behavior, as an interplay of the diffusion and spin relaxation times. In wide junctions the ac magnetoresistance oscillates between positive and negative values, reflecting resonant amplification and depletion of the spin accumulation, while the line shape for thin tunnel junctions is predicted to be purely Lorentzian. The ac spin-valve effect could be a technique to extract spin transport and spin relaxation parameters in the absence of a magnetic field and for a fixed sample size.

preprint2010arXiv

Proposal for a ferromagnetic multiwell spin oscillator

The highly nonlinear coupling of transport and magnetic properties in a multiwell heterostructure, which comprises ferromagnetic quantum wells made of diluted magnetic semiconductors, is theoretically investigated. The interplay of resonant tunneling and carrier-mediated ferromagnetism in the magnetic wells induces very robust, self-sustained current and magnetization oscillations. Over a large window of steady bias voltages the spin polarization of the collector current is oscillating between positive and negative values, realizing a spin oscillator device.

preprint2010arXiv

Spin-orbit coupling and anisotropic exchange in two-electron double quantum dots

The influence of the spin-orbit interactions on the energy spectrum of two-electron laterally coupled quantum dots is investigated. The effective Hamiltonian for a spin qubit pair proposed in F. Baruffa et al., Phys. Rev. Lett. 104, 126401 (2010) is confronted with exact numerical results in single and double quantum dots in zero and finite magnetic field. The anisotropic exchange Hamiltonian is found quantitatively reliable in double dots in general. There are two findings of particular practical importance: i) The model stays valid even for maximal possible interdot coupling (a single dot), due to the absence of a coupling to the nearest excited level, a fact following from the dot symmetry. ii) In a weak coupling regime, the Heitler-London approximation gives quantitatively correct anisotropic exchange parameters even in a finite magnetic field, although this method is known to fail for the isotropic exchange. The small discrepancy between the analytical model (which employes the linear Dresselhaus and Bychkov-Rashba spin-orbit terms) and the numerical data for GaAs quantum dots is found to be mostly due to the cubic Dresselhaus term.

preprint2010arXiv

Theory of anisotropic exchange in laterally coupled quantum dots

The effects of spin-orbit coupling on the two-electron spectra in lateral coupled quantum dots are investigated analytically and numerically. It is demonstrated that in the absence of magnetic field the exchange interaction is practically unaffected by spin-orbit coupling, for any interdot coupling, boosting prospects for spin-based quantum computing. The anisotropic exchange appears at finite magnetic fields. A numerically accurate effective spin Hamiltonian for modeling spin-orbit-induced two-electron spin dynamics in the presence of magnetic field is proposed.

preprint2007arXiv

Control of electron spin and orbital resonance in quantum dots through spin-orbit interactions

Influence of resonant oscillating electromagnetic field on a single electron in coupled lateral quantum dots in the presence of phonon-induced relaxation and decoherence is investigated. Using symmetry arguments it is shown that spin and orbital resonance can be efficiently controlled by spin-orbit interactions. The control is possible due to the strong sensitivity of Rabi frequency to the dot configuration (orientation of the dot and a static magnetic field) as a result of the anisotropy of the spin-orbit interactions. The so called easy passage configuration is shown to be particularly suitable for magnetic manipulation of spin qubits, ensuring long spin relaxation time and protecting the spin qubit from electric field disturbances accompanying on-chip manipulations.

preprint2004arXiv

Theory of spin-polarized transport in semiconductor heterojunctions: Proposal for spin injection and detection in silicon

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their operation by developing a model for spin-polarized transport across a heterojunction. We find that equilibrium spin polarization of holes leads to a strong modification of the spin and charge dynamics of electrons, and we show how the symmetry properties of the charge current can be exploited to detect spin injection in silicon using currently available techniques.

Jaroslav Fabian

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66 published item(s)

Electric-current control of anomalous Hall effect

Resonant magnetic proximity hot spots in Co/hBN/graphene

Strong manipulation of the valley splitting upon twisting and gating in MoSe$_2$/CrI$_3$ and WSe$_2$/CrI$_3$ van der Waals heterostructures

Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides

Counterintuitive gate dependence of weak antilocalization in bilayer graphene/WSe$_2$ heterostructures

Effect of Rashba and Dresselhaus spin-orbit coupling on supercurrent rectification and magnetochiral anisotropy of ballistic Josephson junctions

Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr$_2$Ge$_2$Te$_6$

Proximity effects in graphene on monolayers of transition-metal phosphorus trichalcogenides MPX$_3$

Proximity spin-orbit and exchange coupling in ABA and ABC trilayer graphene van der Waals heterostructures

Signatures of superconducting triplet pairing in Ni--Ga-bilayer junctions

Strong substrate strain effects in multilayered WS2 revealed by high-pressure optical measurements

Edge states in proximitized graphene ribbons and flakes in a perpendicular magnetic field: emergence of lone pseudohelical pairs and pure spin-current states

Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties

Anomalous Josephson Hall effect charge and transverse spin currents in superconductor/ferromagnetic insulator/superconductor junctions

Breakdown of the Hebel-Slichter effect in superconducting graphene due to the emergence of Yu-Shiba-Rusinov states at magnetic resonant scatterers

Chiral Majorana fermions in graphene from proximity-induced superconductivity

Giant proximity exchange and valley splitting in transition metal dichalcogenide/$h\mathrm{BN}$/(Co, Ni) heterostructures

Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling

First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$

Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics

Enhanced spin-orbit coupling in core/shell nanowires

Excitonic Stark effect in MoS$_2$ monolayers

First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors

Magnetotransport signatures of the proximity exchange and spin-orbit couplings in graphene

Realistic multiband k.p approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase

Resonant scattering by magnetic impurities as a model for spin relaxation in bilayer graphene

Spin-orbit coupling in methyl functionalized graphene

Theory of electronic and spin-orbit proximity effects in graphene on Cu(111)

Theory of proximity-induced exchange coupling in graphene on hBN/(Co, Ni)

Graphene on transition-metal dichalcogenides: a platform for proximity spin-orbit physics and optospintronics

Graphene Spintronics

k.p theory for two-dimensional transition metal dichalcogenide semiconductors

Magnetoanisotropic Andreev Reflection in Ferromagnet/Superconductor Junctions

Probing topological transitions in HgTe/CdTe quantum wells by magneto-optical measurements

Spin-orbit coupling in fluorinated graphene

Theory of spin-orbit induced spin relaxation in functionalized graphene

Trivial and inverted Dirac bands, and emergence of quantum spin Hall states in graphene on transition-metal dichalcogenides

Anisotropic optical properties of Fe/GaAs(001) nanolayers from first principles

Electric control of tunneling energy in graphene double dots

Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC

Effects of optical and surface polar phonons on the optical conductivity of doped graphene

Gate-defined coupled quantum dots in topological insulators

Integrating MBE materials with graphene to induce novel spin-based phenomena

Magnetic control of spin-orbit fields: a first-principles study of Fe/GaAs junctions

Magneto-optical conductivity of graphene on polar substrates

Optical conductivity of hydrogenated graphene from first principles

Spin Hot Spots in Single-Electron GaAs-based Quantum Dots

Spin relaxation mechanism in graphene: resonant scattering by magnetic impurities

Spin-orbit coupling in hydrogenated graphene

Tunneling Anisotropic Thermopower and Seebeck Effects in Magnetic Tunnel Junctions

Tunneling Magneto-Thermopower in Magnetic Tunnel Junctions

Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents

Magnetic properties of HgTe quantum wells

Spin-orbit coupled particle in a spin bath

Theory of Spin Relaxation in Two-Electron Lateral Coupled Quantum Dots

Theory of Spin Relaxation in Two-Electron Lateral Coupled Si/SiGe Quantum Dots

Theory of spin-orbit coupling in bilayer graphene

Charge pumping by magnetization dynamics in magnetic and semi-magnetic tunnel junctions with interfacial Rashba or bulk extrinsic spin-orbit couplings

Non-linear spin to charge conversion in mesoscopic structures

Theory of Single Electron Spin Relaxation in Si/SiGe Lateral Coupled Quantum Dots

Theory of the ac spin-valve effect

Proposal for a ferromagnetic multiwell spin oscillator

Spin-orbit coupling and anisotropic exchange in two-electron double quantum dots

Theory of anisotropic exchange in laterally coupled quantum dots

Control of electron spin and orbital resonance in quantum dots through spin-orbit interactions

Theory of spin-polarized transport in semiconductor heterojunctions: Proposal for spin injection and detection in silicon