BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Peter Orel

Peter Orel contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
astro-ph.HEastro-ph.IMhep-exphysics.ins-det

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2022arXiv

Development and characterization of a fast and low noise readout for the next generation X-ray CCDs

The broad energy response, low electronic read noise, and good energy resolution have made X-ray Charge-Coupled Devices (CCDs) an obvious choice for developing soft X-ray astronomical instruments over the last half century. They also come in large array formats with small pixel sizes which make them a potential candidate for the next generation astronomical X-ray missions. However, the next generation X-ray telescopic experiments propose for significantly larger collecting area compared to the existing observatories in order to explore the low luminosity and high redshift X-ray universe which requires these detectors to have an order of magnitude faster readout. In this context, the Stanford University (SU) in collaboration with the Massachusetts Institute of Technology (MIT) has initiated the development of fast readout electronics for X-ray CCDs. At SU, we have designed and developed a fast and low noise readout module with the goal of achieving a readout speed of 5 Mpixel/s. We successfully ran a prototype CCD matrix of 512 $\times$ 512 pixels at 4 Mpixels/s. In this paper, we describe the details of the readout electronics and report the performance of the detectors at these readout speeds in terms of read noise and energy resolution. In the future, we plan to continue to improve performance of the readout module and eventually converge to a dedicated ASIC based readout system to enable parallel read out of large array multi-node CCD devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Single electron Sensitive Readout (SiSeRO) X-ray detectors: Technological progress and characterization

Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. Characterization was performed for a number of prototype sensors with different device architectures, e.g. location of the internal gate, MOSFET polysilicon gate structure, and location of the trough in the internal gate with respect to the source and drain of the MOSFET (the trough is introduced to confine the charge in the internal gate). Using a buried-channel SiSeRO, we have achieved a charge/current conversion gain of >700 pA per electron, an equivalent noise charge (ENC) of around 6 electrons root mean square (RMS), and a full width half maximum (FWHM) of approximately 140 eV at 5.9 keV at a readout speed of 625 Kpixel/s. In this paper, we discuss the SiSeRO working principle, the readout module developed at Stanford, and the characterization test results of the SiSeRO prototypes. We also discuss the potential to implement Repetitive Non-Destructive Readout (RNDR) with these devices and the preliminary results which can in principle yield sub-electron ENC performance. Additional measurements and detailed device simulations will be essential to mature the SiSeRO technology. However, this new device class presents an exciting technology for next generation astronomical X-ray telescopes requiring fast, low-noise, radiation hard megapixel imagers with moderate spectroscopic resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

First results on SiSeRO (Single electron Sensitive Read Out) devices -- a new X-ray detector for scientific instrumentation

We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a depleted internal gate beneath the p-MOSFET. Charge transferred to the internal gate modulates the source-drain current of the transistor. We have developed a drain current readout module to characterize the detector. The prototype sensor achieves a charge/current conversion gain of 700 pA per electron, an equivalent noise charge (ENC) of 15 electrons (e-) root mean square (RMS), and a full width half maximum (FWHM) of 230 eV at 5.9 keV. In this paper, we discuss the SiSeRO working principle, the readout module developed at Stanford, and the first characterization test results of the SiSeRO prototypes. While at present only a proof-of-concept experiment, in the near future we plan to use next generation sensors with improved noise performance and an enhanced readout module. In particular, we are developing a readout module enabling Repetitive Non-Destructive Readout (RNDR) of the charge, which can in principle yield sub-electron ENC performance. With these developments, we eventually plan to build a matrix of SiSeRO amplifiers to develop an active pixel sensor with an on-chip ASIC-based readout system. Such a system, with fast readout speeds and sub-electron noise, could be effectively utilized in scientific applications requiring fast and low-noise spectro-imagers.

0 citations0 reviewsNo code linkedOpen access