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Researcher profile

Andrew Malonis

Andrew Malonis contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
astro-ph.IMastro-ph.HEhep-exphysics.ins-det

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Published work

6 published item(s)

preprint2022arXiv

Development and characterization of a fast and low noise readout for the next generation X-ray CCDs

The broad energy response, low electronic read noise, and good energy resolution have made X-ray Charge-Coupled Devices (CCDs) an obvious choice for developing soft X-ray astronomical instruments over the last half century. They also come in large array formats with small pixel sizes which make them a potential candidate for the next generation astronomical X-ray missions. However, the next generation X-ray telescopic experiments propose for significantly larger collecting area compared to the existing observatories in order to explore the low luminosity and high redshift X-ray universe which requires these detectors to have an order of magnitude faster readout. In this context, the Stanford University (SU) in collaboration with the Massachusetts Institute of Technology (MIT) has initiated the development of fast readout electronics for X-ray CCDs. At SU, we have designed and developed a fast and low noise readout module with the goal of achieving a readout speed of 5 Mpixel/s. We successfully ran a prototype CCD matrix of 512 $\times$ 512 pixels at 4 Mpixels/s. In this paper, we describe the details of the readout electronics and report the performance of the detectors at these readout speeds in terms of read noise and energy resolution. In the future, we plan to continue to improve performance of the readout module and eventually converge to a dedicated ASIC based readout system to enable parallel read out of large array multi-node CCD devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Measurement and simulation of charge diffusion in a small-pixel charge-coupled device

Future high-resolution imaging X-ray observatories may require detectors with both fine spatial resolution and high quantum efficiency at relatively high X-ray energies (>5keV). A silicon imaging detector meeting these requirements will have a ratio of detector thickness to pixel size of six or more, roughly twice that of legacy imaging sensors. This implies greater diffusion of X-ray charge packets. We investigate consequences for sensor performance, reporting charge diffusion measurements in a fully-depleted, 50um thick, back-illuminated CCD with 8um pixels. We are able to measure the size distributions of charge packets produced by 5.9 keV and 1.25 keV X-rays in this device. We find that individual charge packets exhibit a gaussian spatial distribution, and determine the frequency distribution of event widths for a range of internal electric field strength levels. We find a standard deviation for the largest charge packets, which occur near the entrance window, of 3.9um. We show that the shape of the event width distribution provides a clear indicator of full depletion and infer the relationship between event width and interaction depth. We compare measured width distributions to simulations. We compare traditional, 'sum-above-threshold' algorithms for event amplitude determination to 2D gaussian fitting of events and find better spectroscopic performance with the former for 5.9 keV events and comparable results at 1.25 keV. The reasons for this difference are discussed. We point out the importance of read noise driven detection thresholds in spectral resolution, and note that the derived read noise requirements for mission concepts such as AXIS and Lynx may be too lax to meet spectral resolution requirements. While we report measurements made with a CCD, we note that they have implications for the performance of high aspect-ratio silicon active pixel sensors as well.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Single electron Sensitive Readout (SiSeRO) X-ray detectors: Technological progress and characterization

Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. Characterization was performed for a number of prototype sensors with different device architectures, e.g. location of the internal gate, MOSFET polysilicon gate structure, and location of the trough in the internal gate with respect to the source and drain of the MOSFET (the trough is introduced to confine the charge in the internal gate). Using a buried-channel SiSeRO, we have achieved a charge/current conversion gain of >700 pA per electron, an equivalent noise charge (ENC) of around 6 electrons root mean square (RMS), and a full width half maximum (FWHM) of approximately 140 eV at 5.9 keV at a readout speed of 625 Kpixel/s. In this paper, we discuss the SiSeRO working principle, the readout module developed at Stanford, and the characterization test results of the SiSeRO prototypes. We also discuss the potential to implement Repetitive Non-Destructive Readout (RNDR) with these devices and the preliminary results which can in principle yield sub-electron ENC performance. Additional measurements and detailed device simulations will be essential to mature the SiSeRO technology. However, this new device class presents an exciting technology for next generation astronomical X-ray telescopes requiring fast, low-noise, radiation hard megapixel imagers with moderate spectroscopic resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Understanding the effects of charge diffusion in next-generation soft X-ray imagers

To take advantage of high-resolution optics sensitive to a broad energy range, future X-ray imaging instruments will require thick detectors with small pixels. This pixel aspect ratio affects spectral response in the soft X-ray band, vital for many science goals, as charge produced by the photon interaction near the entrance window diffuses across multiple pixels by the time it is collected, and is potentially lost below the imposed noise threshold. In an effort to understand these subtle but significant effects and inform the design and requirements of future detectors, we present simulations of charge diffusion using a variety of detector characteristics and operational settings, assessing spectral response at a range of X-ray energies. We validate the simulations by comparing the performance to that of real CCD detectors tested in the lab and deployed in space, spanning a range of thickness, pixel size, and other characteristics. The simulations show that while larger pixels, higher bias voltage, and optimal backside passivation improve performance, reducing the readout noise has a dominant effect in all cases. We finally show how high-pixel-aspect-ratio devices present challenges for measuring the backside passivation performance due to the magnitude of other processes that degrade spectral response, and present a method for utilizing the simulations to qualitatively assess this performance. Since compelling science requirements often compete technically with each other (high spatial resolution, soft X-ray response, hard X-ray response), these results can be used to find the proper balance for a future high-spatial-resolution X-ray instrument.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

First results on SiSeRO (Single electron Sensitive Read Out) devices -- a new X-ray detector for scientific instrumentation

We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a depleted internal gate beneath the p-MOSFET. Charge transferred to the internal gate modulates the source-drain current of the transistor. We have developed a drain current readout module to characterize the detector. The prototype sensor achieves a charge/current conversion gain of 700 pA per electron, an equivalent noise charge (ENC) of 15 electrons (e-) root mean square (RMS), and a full width half maximum (FWHM) of 230 eV at 5.9 keV. In this paper, we discuss the SiSeRO working principle, the readout module developed at Stanford, and the first characterization test results of the SiSeRO prototypes. While at present only a proof-of-concept experiment, in the near future we plan to use next generation sensors with improved noise performance and an enhanced readout module. In particular, we are developing a readout module enabling Repetitive Non-Destructive Readout (RNDR) of the charge, which can in principle yield sub-electron ENC performance. With these developments, we eventually plan to build a matrix of SiSeRO amplifiers to develop an active pixel sensor with an on-chip ASIC-based readout system. Such a system, with fast readout speeds and sub-electron noise, could be effectively utilized in scientific applications requiring fast and low-noise spectro-imagers.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The wide-field infrared transient explorer (WINTER)

The Wide-Field Infrared Transient Explorer (WINTER) is a new infrared time-domain survey instrument which will be deployed on a dedicated 1 meter robotic telescope at Palomar Observatory. WINTER will perform a seeing-limited time domain survey of the infrared (IR) sky, with a particular emphasis on identifying r-process material in binary neutron star (BNS) merger remnants detected by LIGO. We describe the scientific goals and survey design of the WINTER instrument. With a dedicated trigger and the ability to map the full LIGO O4 positional error contour in the IR to a distance of 190 Mpc within four hours, WINTER will be a powerful kilonova discovery engine and tool for multi-messenger astrophysics investigations. In addition to follow-up observations of merging binaries, WINTER will facilitate a wide range of time-domain astronomical observations, all the while building up a deep coadded image of the static infrared sky suitable for survey science. WINTER's custom camera features six commercial large-format Indium Gallium Arsenide (InGaAs) sensors and a tiled optical system which covers a $>$1-square-degree field of view with 90% fill factor. The instrument observes in Y, J and a short-H (Hs) band tuned to the long-wave cutoff of the InGaAs sensors, covering a wavelength range from 0.9 - 1.7 microns. We present the design of the WINTER instrument and current progress towards final integration at Palomar Observatory and commissioning planned for mid-2021.

0 citations0 reviewsNo code linkedOpen access