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Researcher profile

Paulo E. Faria Junior

Paulo E. Faria Junior contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conphysics.optics

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Published work

7 published item(s)

preprint2023arXiv

Strong manipulation of the valley splitting upon twisting and gating in MoSe$_2$/CrI$_3$ and WSe$_2$/CrI$_3$ van der Waals heterostructures

We investigate the twist-angle and gate dependence of the proximity-induced exchange coupling in the monolayer transition-metal dichalcogenides (TMDCs) MoSe$_2$ and WSe$_2$ due to the vdW coupling to the ferromagnetic semiconductor CrI$_3$, from first-principles calculations. A model Hamiltonian, that captures the relevant band edges at the $K/K^{\prime}$ valleys of the proximitized TMDCs, is employed to quantify the proximity-induced exchange. Upon twisting from 0° to 30°, we find a transition of the TMDC valence band (VB) edge exchange splitting from about $-2$ to $2$ meV, while the conduction band (CB) edge exchange splitting remains nearly unchanged at around $-3$ meV. For the VB of WSe$_2$ (MoSe$_2$) on CrI$_3$, the exchange coupling changes sign at around 8° (16°). We find that even at the angles with almost zero spin splittings of the VB, the real-space spin polarization profile of holes at the band edge is highly non-uniform, with alternating spin up and spin down orbitals. Furthermore, a giant tunability of the proximity-induced exchange coupling is provided by a transverse electric field of a few V/nm. We complement our \textit{ab initio} results by calculating the excitonic valley splitting to provide experimentally verifiable optical signatures of the proximity exchange. Specifically, we predict that the valley splitting increases almost linearly as a function of the twist angle. Furthermore, the proximity exchange is highly tunable by gating, allowing to tailor the valley splitting in the range of 0 to 12 meV in WSe$_2$/CrI$_3$, which is equivalent to external magnetic fields of up to about 60 Tesla. Our results highlight the important impact of the twist angle and gating when employing magnetic vdW heterostructures in experimental geometries.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Effect of Rashba and Dresselhaus spin-orbit coupling on supercurrent rectification and magnetochiral anisotropy of ballistic Josephson junctions

Simultaneous breaking of inversion- and time-reversal symmetry in Josephson junction leads to a possible violation of the $I(φ)=-I(-φ)$ equality for the current-phase relation. This is known as anomalous Josephson effect and it produces a phase shift $φ_0$ in sinusoidal current-phase relations. In ballistic Josephson junctions with non-sinusoidal current phase relation the observed phenomenology is much richer, including the supercurrent diode effect and the magnetochiral anisotropy of Josephson inductance. In this work, we present measurements of both effects on arrays of Josephson junctions defined on epitaxial Al/InAs heterostructures. We show that the orientation of the current with respect to the lattice affects the magnetochiral anisotropy, possibly as the result of a finite Dresselhaus component. In addition, we show that the two-fold symmetry of the Josephson inductance reflects in the activation energy for phase slips.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Strong substrate strain effects in multilayered WS2 revealed by high-pressure optical measurements

The optical properties of two-dimensional materials can be effectively tuned by strain induced from a deformable substrate. In the present work we combine first-principles calculations based on density functional theory and the effective Bethe-Salpeter equation with high-pressure optical measurements in order to thoroughly describe the effect of strain and dielectric environment onto the electronic band structure and optical properties of a few-layered transition metal dichalcogenide. Our results show that WS2 remains fully adhered to the substrate at least up to a -0.6% in-plane compressive strain for a wide range of substrate materials. We provide a useful model to describe effect of strain on the optical gap energy. The corresponding experimentally-determined out-of-plane and in-plane stress gauge factors for WS2 monolayers are -8 and 24 meV/GPa, respectively. The exceptionally large in-plane gauge factor confirm transition metal dichalcogenides as very promising candidates for flexible functionalities. Finally, we discuss the pressure evolution of an optical transition closely-lying to the A exciton for bulk WS2 as well as the direct-to-indirect transition of the monolayer upon compression.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Trion induced photoluminescence of a doped MoS2 monolayer

We demonstrate that the temperature and doping dependencies of the photoluminescence (PL) spectra of a doped MoS2 monolayer have several peculiar characteristics defined by trion radiative decay. While only zero-momentum exciton states are coupled to light, radiative recombination of non-zero momentum trions is also allowed. This leads to an asymmetric broadening of the trion spectral peak and redshift of the emitted light with increasing temperature. The lowest energy trion state is dark, which is manifested by the sharply non-monotonic temperature dependence of the PL intensity. Our calculations combine the Dirac model for the single-particle states, the parameters for which are obtained from the first principle calculations, and the direct solution of the three-particle problem within the Tamm-Dancoff approximation. The numerical results are well captured by a simple model that yields analytical expressions for the temperature dependencies of the PL spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Exciton g-factors of van der Waals heterostructures from first principles calculations

External fields are a powerful tool to probe optical excitations in a material. The linear energy shift of an excitation in a magnetic field is quantified by its effective g-factor. Here we show how exciton g-factors and their sign can be determined by converged first principles calculations. We apply the method to monolayer excitons in semiconducting transition metal dichalcogenides and to interlayer excitons in MoSe$_2$/WSe$_2$ heterobilayers and obtain good agreement with recent experimental data. The precision of our method allows to assign measured g-factors of optical peaks to specific transitions in the band structure and also to specific regions of the samples. This revealed the nature of various, previously measured interlayer exciton peaks. We further show that, due to specific optical selection rules, g-factors in van der Waals heterostructures are strongly spin- and stacking-dependent. The calculation of orbital angular momenta requires the summation over hundreds of bands, indicating that for the considered two-dimensional materials the basis set size is a critical numerical issue. The presented approach can potentially be applied to a wide variety of semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant proximity exchange and valley splitting in transition metal dichalcogenide/$h\mathrm{BN}$/(Co, Ni) heterostructures

We investigate the proximity-induced exchange coupling in transition-metal dichalcogenides (TMDCs), originating from spin injector geometries composed of hexagonal boron-nitride (hBN) and ferromagnetic (FM) cobalt (Co) or nickel (Ni), from first-principles. We employ a minimal tight-binding Hamiltonian that captures the low energy bands of the TMDCs around K and K' valleys, to extract orbital, spin-orbit, and exchange parameters. The TMDC/hBN/FM heterostructure calculations show that due to the hBN buffer layer, the band structure of the TMDC is preserved, with an additional proximity-induced exchange splitting in the bands. We extract proximity exchange parameters in the 1--10 meV range, depending on the FM. The combination of proximity-induced exchange and intrinsic spin-orbit coupling (SOC) of the TMDCs, leads to a valley polarization, translating into magnetic exchange fields of tens of Tesla. The extracted parameters are useful for subsequent exciton calculations of TMDCs in the presence of a hBN/FM spin injector. Our calculated absorption spectra show large splittings for the exciton peaks; in the case of MoS$_2$/hBN/Co we find a value of about 8 meV, corresponding to about 50 Tesla external magnetic field in bare TMDCs. The reason lies in the band structure, where a hybridization with Co $d$ orbitals causes a giant valence band exchange splitting of more than 10 meV. Structures with Ni do not show any $d$ level hybridization features, but still sizeable proximity exchange and exciton peak splittings of around 2 meV are present in the TMDCs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-Lasers: Spintronics Beyond Magnetoresistance

Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-polarized carriers is transferred to photons, thus leading to the circularly polarized emitted light. The intuition for the operation of such spin-lasers can be obtained from simple bucket and harmonic oscillator models, elucidating their steady-state and dynamic response, respectively. These lasers extend the functionalities of spintronic devices and exceed the performance of conventional (spin-unpolarized) lasers, including an order of magnitude faster modulation frequency. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both viewed as detrimental in spintronics and conventional lasers. Spin-lasers provide a platform to test novel concepts in spin devices and offer progress connected to the advances in more traditional areas of spintronics.

0 citations0 reviewsNo code linkedOpen access