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Researcher profile

Gaofeng Xu

Gaofeng Xu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallGraphicsphysics.optics

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Published work

4 published item(s)

preprint2022arXiv

Switching modulation of spin transport in ferromagnetic tetragonal silicene

We study the band structure and transport properties of ferromagnetic tetragonal silicene nanoribbons by using the non-equilibrium Green's function method. The band structure and spin-dependent conductance are discussed under the combined effect of the external electric field, potential energy, exchange field and the spin-orbit coupling. One can easily realize a phase transition from a semimetallic to a semiconducting state by changing the transverse width of the nanoribbon. Separation of spin-dependent conductances arises from the effect of exchange field and the spin-orbit coupling, while zero-conductance behaviors exhibit spin-dependent band gaps induced by the electric field. We propose a device configuration of four-terminal tetragonal silicene nanoribbon with two central channels. It is found that spin current can be controlled by utilizing two switches. The switch with a high potential barrier can block electrons flowing from the central scattering region into other terminals. Interestingly, applying only one switch can realize spin-dependent zero conductance and large spin polarization. Two switches can provide multiple operations for controlling spin-dependent transport properties. The two-channel ferromagnetic tetragonal silicene nanoribbon can realize an effective separation of spin current, which may be a potential candidate for spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Variational Hierarchical Directed Bounding Box Construction for Solid Mesh Models

Object oriented bounding box tree (OBB-Tree for short) has many applications in collision detection, real-time rendering, etc. It has a wide range of applications. The construction of the hierarchical directed bounding box of the solid mesh model is studied, and a new optimization solution method is proposed. But this part of the external space volume that does not belong to the solid mesh model is used as the error, and an error calculation method based on hardware acceleration is given. Secondly, the hierarchical bounding box construction problem is transformed into a variational approximation problem, and the optimal hierarchical directed bounding box is obtained by solving the global error minimum. In the optimization calculation, we propose that combining Lloyd clustering iteration in the same layer and MultiGrid-like reciprocating iteration between layers. Compared with previous results, this method can generate aired original solid mesh models are more tightly packed with hierarchical directed bounding box approximation. In the practical application of collision detection, the results constructed using this method can reduce the computational time of collision detection and improve detection efficiency.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Intensity equations for birefringent spin lasers

Semiconductor spin lasers are distinguished from their conventional counterparts by the presence of spin-polarized carriers. The transfer of angular momentum of the spin-polarized carriers to photons provides important opportunities for the operation of lasers. With the injection of spin-polarized carriers, which lead to the circularly polarized light, the polarization of the emitted light can be changed an order of magnitude faster than its intensity. This ultrafast operation of spin lasers relies on a large birefringence, usually viewed as detrimental in spin and conventional lasers. We introduce a transparent description of spin lasers using intensity equations, which elucidate the influence of birefringence on the intensity and polarization modulation of lasers. While intensity modulation is independent of birefringence, for polarization modulation an increase in birefringence directly increases the resonant frequency. Our results for dynamical operation of lasers provide a guide for their spin-dependent response and spintronic applications beyond magnetoresistance.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-Lasers: Spintronics Beyond Magnetoresistance

Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-polarized carriers is transferred to photons, thus leading to the circularly polarized emitted light. The intuition for the operation of such spin-lasers can be obtained from simple bucket and harmonic oscillator models, elucidating their steady-state and dynamic response, respectively. These lasers extend the functionalities of spintronic devices and exceed the performance of conventional (spin-unpolarized) lasers, including an order of magnitude faster modulation frequency. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both viewed as detrimental in spintronics and conventional lasers. Spin-lasers provide a platform to test novel concepts in spin devices and offer progress connected to the advances in more traditional areas of spintronics.

0 citations0 reviewsNo code linkedOpen access