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Researcher profile

Parthapratim Biswas

Parthapratim Biswas contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.dis-nncond-mat.stat-mechcond-matmath-phmath.MPnlin.CDphysics.comp-ph

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Published work

12 published item(s)

preprint2022arXiv

Extended-range order in tetrahedral amorphous semiconductors: The case of amorphous silicon

This paper reports the presence of extended-range ordering in the atomic pair-correlation function of amorphous silicon ($a$-Si) using ultra-large atomistic models obtained from Monte Carlo and molecular-dynamics simulations. The extended-range order manifests itself in the form of radial oscillations, on the length scale of 20-40 angstrom, which are examined by directly analyzing the radial distribution of atoms in distant coordination shells and comparing the same with those from a class of partially-ordered networks of Si atoms and disordered configurations of crystalline silicon from an information-theoretic point of view. The study suggests that the extended-range radial oscillations principally originate from the propagation of radial ordering from the first few atomic shells to a distance of up to 40 angstrom. The effect of these oscillations on the first sharp diffraction peak (FSDP) in the structure factor is addressed by obtaining a semi-analytical expression for the static structure factor of $a$-Si, and calculating an estimate of the error of the intensity of the FSDP associated with the truncation of radial information from distant shells. The results indicate that the extended-range oscillations do not have any noticeable effects on the position and intensity of the FSDP, which are primarily determined by the medium-range atomic correlations of up to a length of 20 angstrom in amorphous silicon.

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preprint2016arXiv

Inversion of diffraction data for amorphous materials

The general and practical inversion of diffraction data-producing a computer model correctly representing the material explored - is an important unsolved problem for disordered materials. Such modeling should proceed by using our full knowledge base, both from experiment and theory. In this paper, we describe a robust method to jointly exploit the power of ab initio atomistic simulation along with the information carried by diffraction data. The method is applied to two very different systems: amorphous silicon and two compositions of a solid electrolyte memory material silver-doped GeSe3 . The technique is easy to implement, is faster and yields results much improved over conventional simulation methods for the materials explored. By direct calculation, we show that the method works for both poor and excellent glass forming materials. It offers a means to add a priori information in first principles modeling of materials, and represents a significant step toward the computational design of non-crystalline materials using accurate interatomic interactions and experimental information.

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preprint2016arXiv

Realistic inversion of diffraction data for an amorphous solid: the case of amorphous silicon

We apply a new method "force enhanced atomic refinement" (FEAR) to create a computer model of amorphous silicon (a-Si), based upon the highly precise X-ray diffraction experiments of Laaziri et al. The logic underlying our calculation is to estimate the structure of a real sample a-Si using experimental data and chemical information included in a non-biased way, starting from random coordinates. The model is in close agreement with experiment and also sits at a suitable minimum energy according to density functional calculations. In agreement with experiments, we find a small concentration of coordination defects that we discuss, including their electronic consequences. The gap states in the FEAR model are delocalized compared to a continuous random network model. The method is more efficient and accurate, in the sense of fitting the diffraction data than conventional melt quench methods. We compute the vibrational density of states and the specific heat, and find that both compare favorably to experiments.

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preprint2015arXiv

Sculpting the band gap: a computational approach

Materials with optimized band gap are needed in many specialized applications. In this work, we demonstrate that Hellmann-Feynman forces associated with the gap states can be used to find atomic coordinates with a desired electronic density of states. Using tight-binding models, we show that this approach can be used to arrive at electronically designed models of amorphous silicon and carbon. We provide a simple recipe to include a priori electronic information in the formation of computer models of materials, and prove that this information may have profound structural consequences. An additional example of a graphene nanoribbon is provided to demonstrate the applicability of this approach to engineer 2-dimensional materials. The models are validated with plane-wave density functional calculations.

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preprint2010arXiv

Function reconstruction as a classical moment problem: A maximum entropy approach

We present a systematic study of the reconstruction of a non-negative function via maximum entropy approach utilizing the information contained in a finite number of moments of the function. For testing the efficacy of the approach, we reconstruct a set of functions using an iterative entropy optimization scheme, and study the convergence profile as the number of moments is increased. We consider a wide variety of functions that include a distribution with a sharp discontinuity, a rapidly oscillatory function, a distribution with singularities, and finally a distribution with several spikes and fine structure. The last example is important in the context of the determination of the natural density of the logistic map. The convergence of the method is studied by comparing the moments of the approximated functions with the exact ones. Furthermore, by varying the number of moments and iterations, we examine to what extent the features of the functions, such as the divergence behavior at singular points within the interval, is reproduced. The proximity of the reconstructed maximum entropy solution to the exact solution is examined via Kullback-Leibler divergence and variation measures for different number of moments.

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preprint2010arXiv

Microstructure, vacancies and moments of nuclear magnetic resonance of hydrogenated amorphous silicon

Recent experiments on hydrogenated amorphous silicon using infrared absorption spectroscopy have indicated the presence of mono- and divacancy in samples for concentration of up to 14\% hydrogen. Motivated by this observation, we study the microstructure of hydrogen in two model networks of hydrogen-rich amorphous silicon with particular emphasis on the nature of the distribution (of hydrogen), the presence of defects, and the characteristic features of the nuclear magnetic resonance spectra at low and high concentration of hydrogen. Our study reveals the presence of vacancies, which are the built-in features of the model networks. The study also confirms the presence of various hydride configurations in the networks that include from silicon monohydrides and dihydrides to open chain-like structures, which have been observed in the infrared and nuclear magnetic resonance experiments. The broad and the narrow line widths of the nuclear magnetic resonance spectra are calculated from a knowledge of the distribution of spins (hydrogen) in the networks.

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preprint2009arXiv

Atomistic modeling of amorphous silicon carbide: An approximate first-principles study in constrained solution space

Localized basis ab initio molecular dynamics simulation within the density functional framework has been used to generate realistic configurations of amorphous silicon carbide (a-SiC). Our approach consists of constructing a set of smart initial configurations that conform essential geometrical and structural aspects of the materials obtained from experimental data, which is subsequently driven via first-principles force-field to obtain the best solution in a reduced solution space. A combination of a priori information (primarily structural and topological) along with the ab-initio optimization of the total energy makes it possible to model large system size (1000 atoms) without compromising the quantum mechanical accuracy of the force-field to describe the complex bonding chemistry of Si and C. The structural, electronic and the vibrational properties of the models have been studied and compared to existing theoretical models and available data from experiments. We demonstrate that the approach is capable of producing large, realistic configurations of a-SiC from first-principles simulation that display excellent structural and electronic properties of a-SiC. Our study reveals the presence of predominant short-range order in the material originating from heteronuclear Si-C bonds with coordination defect concentration as small as 5% and the chemical disorder parameter of about 8%.

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preprint2009arXiv

Lyapunov exponent and natural invariant density determination of chaotic maps: An iterative maximum entropy ansatz

We apply the maximum entropy principle to construct the natural invariant density and Lyapunov exponent of one-dimensional chaotic maps. Using a novel function reconstruction technique that is based on the solution of Hausdorff moment problem via maximizing Shannon entropy, we estimate the invariant density and the Lyapunov exponent of nonlinear maps in one-dimension from a knowledge of finite number of moments. The accuracy and the stability of the algorithm are illustrated by comparing our results to a number of nonlinear maps for which the exact analytical results are available. Furthermore, we also consider a very complex example for which no exact analytical result for invariant density is available. A comparison of our results to those available in the literature is also discussed.

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preprint2009arXiv

Theoretical study of hydrogen microstructure in models of hydrogenated amorphous silicon

We study the distribution of hydrogen and various hydride configurations in realistic models of a-Si:H for two different concentration generated via experimentally constrained molecular relaxation approach (ECMR) [1]. The microstructure corresponding to low (< 10%) and high (> 20%) concentration of H atoms are addressed and are compared to the experimental results with particular emphasis on the size of H clusters and local environment of H atoms.The linewidths of the nuclear magnetic resonance (NMR) spectrum for the model configurations are calculated in order to compare to the experimental NMR data. Our study shows the presence of isolated hydrogen atoms, small and relatively large clusters with average proton-proton neighbor distance in the clusters around 1.6 to 2.4 Angstrom that have been observed in multiple quantum NMR experiments.

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preprint2004arXiv

Experimentally Constrained Molecular Relaxation: The Case of Glassy GeSe2

An ideal atomistic model of a disordered material should contradict no experiments,and should also be consistent with accurate force fields (either {\it ab initio}or empirical). We make significant progress toward jointly satisfying {\it both} of these criteria using a hybrid reverse Monte Carlo approach in conjunction with approximate first principles molecular dynamics. We illustrate the method by studying the complex binary glassy material g-GeSe$_2$. By constraining the model to agree with partial structure factors and {\it ab initio} simulation, we obtain a 647-atom model in close agreement with experiment, including the first sharp diffraction peak in the static structure factor. We compute the electronic state densities and compare to photoelectron spectroscopies. The approach is general and flexible.

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preprint1998arXiv

Multifractal scaling of electronic transmission resonances in perfect and imperfect Fibonacci $δ$-function potentials

We present here a detailed multifractal scaling study for the electronic transmission resonances with the system size for an infinitely large one dimensional perfect and imperfect quasiperiodic system represented by a sequence of $δ$-function potentials. The electronic transmission resonances in the energy minibands manifest more and more fragmented nature of the transmittance with the change of system sizes. We claim that when a small perturbation is randomly present at a few number of sites, the nature of electronic states will change and this can be understood by studying the electronic transmittance with the change of system size. We report the different critical states manifested in the size variation of the transmittance corresponding to the resonant energies for both perfect and imperfect cases through multifractal scaling study for few of these resonances.

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