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Researcher profile

D. A. Drabold

D. A. Drabold contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.stat-mechcond-mat.dis-nncond-mat.mes-hallcond-mat.otherquant-ph

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Published work

18 published item(s)

preprint2020arXiv

Structure and charge transport of amorphous $Cu$-doped $Ta_2O_5$ : An ab initio study

In this paper, we present ab initio computer models of Cu-doped amorphous Ta2O5 , a promising candidate for Conducting Bridge Random Access Memory (CBRAM) memory devices, and study the structural, electronic, charge transport and vibrational properties based on plane-wave density functional methods. We offer an atomistic picture of the process of phase segregation/separation between Cu and Ta2O5 subnetworks. Electronic calculations show that the models are conducting with extended Kohn-Sham orbitals around the Fermi level. In addition to that, we also characterize the electronic transport using the Kubo-Greenwood formula modified suitably to calculate the space-projected conductivity (SPC). Our SPC calculations show that Cu clusters and under-coordinated Ta adjoining the Cu are the conduction-active parts of the network. We also report information about the dependence of the electrical conductivity on the connectivity of the Cu sub-matrix. Vibrational calculations for one of the models has been undertaken with an emphasis on localization and animation of representative modes.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ab initio model of amorphous zinc oxide (a-ZnO) and a-X_0.375 Z_0.625 O (X=Al, Ga and In)

Density functional theory (DFT) calculations are carried out to study the structure and electronic structure of amorphous zinc oxide (a-ZnO). The models were prepared by the "melt-quench" method. The models are chemically ordered with some coordination defects. The effect of trivalent dopants in the structure and electronic properties of a-ZnO is investigated. Models of a-X_0.375 Z_0.625 O (X=Al, Ga and In) were also prepared by the "melt- quench" method. The trivalent dopants reduce the four-fold Zn and O, thereby introducing some coordination defects in the network. The dopants prefer to bond with O atom. The network topology is discussed in detail. Dopants reduce the gap in EDOS by producing defect states minimum while maintaining the extended nature of the conduction band edge.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Realistic inversion of diffraction data for an amorphous solid: the case of amorphous silicon

We apply a new method "force enhanced atomic refinement" (FEAR) to create a computer model of amorphous silicon (a-Si), based upon the highly precise X-ray diffraction experiments of Laaziri et al. The logic underlying our calculation is to estimate the structure of a real sample a-Si using experimental data and chemical information included in a non-biased way, starting from random coordinates. The model is in close agreement with experiment and also sits at a suitable minimum energy according to density functional calculations. In agreement with experiments, we find a small concentration of coordination defects that we discuss, including their electronic consequences. The gap states in the FEAR model are delocalized compared to a continuous random network model. The method is more efficient and accurate, in the sense of fitting the diffraction data than conventional melt quench methods. We compute the vibrational density of states and the specific heat, and find that both compare favorably to experiments.

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preprint2015arXiv

Sculpting the band gap: a computational approach

Materials with optimized band gap are needed in many specialized applications. In this work, we demonstrate that Hellmann-Feynman forces associated with the gap states can be used to find atomic coordinates with a desired electronic density of states. Using tight-binding models, we show that this approach can be used to arrive at electronically designed models of amorphous silicon and carbon. We provide a simple recipe to include a priori electronic information in the formation of computer models of materials, and prove that this information may have profound structural consequences. An additional example of a graphene nanoribbon is provided to demonstrate the applicability of this approach to engineer 2-dimensional materials. The models are validated with plane-wave density functional calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Atomistic origin of doping-enhanced rapid crystallization in Ag-doped Ge-Sb-Te alloys: a joint experimental and theoretical study

We have applied extended X-ray absorption fine structure (EXAFS) analyses and ab-initio molecular dynamics (AIMD) simulations to study the atomic structure of Ag-doped (up to 42%) Ge1Sb2Te4 alloys. Analysis of the models that are consistent with the EXAFS experiment reveals that the Ge environment is significantly modified by Ag doping whereas those of Sb and Te are barely affected (except for high Ag concentrations), and suggests that Ag prefers bonding with Te to Ge or Sb. Doping with Ag promotes the conversion of tetrahedral Ge sites to octahedral Ge sites and enhances the speed of crystallization of Ge-Sb-Te (GST) alloys as evidenced directly from the MD simulations. Our study shed light on the atomistic mechanism of rapid crystallization of GST alloys enhanced by Ag doping.

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preprint2013arXiv

Radiation fields for nanoscale systems

For a group of charged particles obeying quantum mechanics interacting with an electromagnetic field, the charge and current density in a pure state of the system are expressed with the many-body wave function of the state. Using these as sources, the microscopic Maxwell equations can be written down for any given pure state of a many-body system. By employing semi-classical radiation theory with these sources, the microscopic Maxwell equations can be used to compute the strong radiation fields produced by interacting charged quantal particles. For a charged quantal particle, three radiation fields involve only the vector potential $\mathbf{A}$. This is another example demonstrating the observability of vector potential. Five radiation fields are perpendicular to the canonical momentum of a single charged particle. For a group of charged particles, a new type of radiation field is predicted to be perpendicular to $\mathbf{A}(\mathbf{x}_{j},t)\times \lbrack\nabla\times(\nabla_{j}Ψ^{\prime})]$, where $Ψ^{'}$ is the many-body wave function. This kind of radiation does not exist for a single charged particle. The macroscopic Maxwell equations are derived from the corresponding microscopic equations for a pure state by the Russakoff-Robinson procedure which requires only a spatial coarse graining. Because the sources of fields are also the responses of a system to an external field, one also has to give up the temporal coarse graining of the current density which is often supposed to be critical in the kinetic approach of conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Direct ab-initio molecular dynamic study of ultrafast phase change in Ag-alloyed Ge$_{2}$Sb$_{2}$Te$_{5}$

We employed ab-initio molecular dynamics to directly simulate the effects of Ag alloying ($\sim5%$ Ag concentration) on the phase change properties of Ge$_{2}$Sb$_{2}$Te$_{5}$. The short range order is preserved, whereas a slight improvement in the chemical order is observed. A slight decrease in the fraction of tetrahedral Ge (sp$^{3}$ bonding) is reflected in the reduction of the optical band gap and in the increased dielectric constant. Simulations of the amorphous to crystalline phase change cycle revealed the fact that the crystallization speed in Ag$_{0.5}$Ge$_{2}$Sb$_{2}$Te$_{5}$ is no less than that in Ge$_{2}$Sb$_{2}$Te$_{5}$. Moreover, the smaller density difference and the larger energy difference between the two phases of Ag$_{0.5}$Ge$_{2}$Sb$_{2}$Te$_{5}$ (compared to Ge$_{2}$Sb$_{2}$Te$_{5}$) suggest a smaller residual stress in devices due to phase transition and improved thermal stability for Ag$_{0.5}$Ge$_{2}$Sb$_{2}$Te$_{5}$. The potential viability of this material suggests the need for a wide exploration of alternative phase change memory materials.

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preprint2012arXiv

Shear viscosity: velocity gradient as a constraint on wave function

By viewing a velocity gradient in a fluid as an internal disturbance and treating it as a constraint on the wave function of a system, a linear evolution equation for the wave function is obtained from the Lagrange multiplier method. It allows us to define the microscopic response to a velocity gradient in a pure state. Taking a spatial coarse-graining average over this microscopic response and averaging it over admissible initial states, we achieve the observed macroscopic response and transport coefficient. In this scheme, temporal coarse-graining is not needed. The dissipation caused by a velocity gradient depends on the square of initial occupation probability, whereas the dissipation caused by a mechanical perturbation depends on the initial occupation probability itself. We apply the method of variation of constants to solve the time-dependent Schrodinger equation with constraints. The various time scales appearing in the momentum transport are estimated. The relation\ between the present work and previous theories is discussed.

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preprint2012arXiv

Symmetry breaking and low energy conformational fluctuations in amorphous graphene

Recently, the prospects for amorphous phases of graphene (a-G) have been explored computationally. Initial models were flat, and contained odd-member rings, while maintaining three-fold coordination and sp2 bonding. Upon relaxation, puckering occurs, and may be traced to the existence of pentagons, in analogy with the situation for fullerenes. In this work, we systematically explore the inherent structures with energy close to the flat starting structure. As expected, the planar symmetry can be broken in various ways, which we characterize for 800-atom model of a-G, always using local basis density functional techniques. The classical normal modes of various structural models are discussed, with an emphasis on imaginary modes indicating the evolution from flat to puckered. We also discuss very low energy conformational fluctuations akin to those seen previously in amorphous silicon, and reflect on the nature of the amorphous "ground state" within a network of fixed topology. For completeness, high energy modes were also computed, and are found to be associated with strained parts of the network.

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preprint2011arXiv

Approximate Theory of Temperature Coefficient of Resistivity of Amorphous Semiconductors

In this paper, we develop an approximate theory of the temperature coefficient of resistivity (TCR) and conductivity based upon the recently proposed Microscopic Response Method. By introducing suitable approximations for the lattice dynamics, localized and extended electronic states, we produce new explicit forms for the conductivity and TCR, which depend on easily accessible material parameters. The theory is in reasonable agreement with experiments on a-Si:H and a-Ge:H. A long-standing puzzle, a \textquotedblleft kink\textquotedblright\ in the experimental $% \log_{10}σ$ vs. 1/T curve, is predicted by the theory and attributed to localized to extended transitions, which have not been properly handled in earlier theories.

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preprint2010arXiv

Alternative approach to computing transport coefficients: application to conductivity and Hall coefficient of hydrogenated amorphous silicon

We introduce a theoretical framework for computing transport coefficients for complex materials. As a first example, we resolve long-standing inconsistencies between experiment and theory pertaining to the conductivity and Hall mobility for amorphous silicon and show that the Hall sign anomaly is a consequence of localized states. Next, we compute the AC conductivity of amorphous polyanaline. The formalism is applicable to complex materials involving defects and band-tail states originating from static topological disorder and extended states. The method may be readily integrated with current \textit{ab initio} methods.

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preprint2010arXiv

Phonon driven transport in amorphous semiconductors: Transition probabilities

Starting from Holstein's work on small polaron hopping, the evolution equations for localized and extended states in the presence of atomic vibrations are systematically derived for an amorphous semiconductor. The transition probabilities are obtained for transitions between all combinations of localized and extended states. For any transition process involving a localized state, the activation energy is not simply the energy difference between the final and initial states; the reorganization energy of atomic configuration is also included as an important part of the activation energy (Marcus form). The activation energy for the transitions between localized states decreases with rising temperature and leads to the Meyer-Neldel rule. The predicted Meyer-Neldel temperatures are consistent with observations in several materials. The computed field-dependence of conductivity agrees with experimental data. The present work suggests that the upper temperature limit of variable range hopping is proportional to the frequency of first peak of phonon spectrum. We have also improved the description of the photocurrent decay at low temperatures. Analysis of the transition probability from an extended state to a localized state suggests that there exists a short-lifetime belt of extended states inside the conduction band or valence band.

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preprint2010arXiv

Structure determination of disordered materials from diffraction data

We show that the information gained in spectroscopic experiments regarding the number and distribution of atomic environments can be used as a valuable constraint in the refinement of the atomic-scale structures of nanostructured or amorphous materials from pair distribution function (PDF) data. We illustrate the effectiveness of this approach for three paradigmatic disordered systems: molecular C60, a-Si, and a-SiO2 . Much improved atomistic models are attained in each case without any a-priori assumptions regarding coordination number or local geometry. We propose that this approach may form the basis for a generalised methodology for structure "solution" from PDF data applicable to network, nanostructured and molecular systems alike.

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preprint2010arXiv

The Work Done by an External Field

From the change in kinetic energy induced by an external field, we discuss the applicable conditions for the Mott-Davis and Moseley-Lukes form of the Kubo-Greenwood formula (KGF) for the electrical conductivity which has been implemented in \textit{ab initio} codes. We show that the simplified KGF is suitable only for computing the AC conductivity at sufficiently high frequency and when the gradient of the carrier density is small.

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preprint2010arXiv

Transport calculations in complex materials: A comparison of the Kubo formula, the Kubo-Greenwood formula and the microscopic response method

Recently we have introduced the microscopic response method (MRM) to compute the conductivity and Hall mobility for complex system with topological and thermal disorder, which is more convenient than the Kubo formula. We prove that for a canonical ensemble the MRM leads to the same expression as the Kubo formula. When the gradient of carrier density is small, the MRM reduces to the widely used Kubo-Greenwood formula.

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preprint2009arXiv

Hidden structure in amorphous solids

Recent theoretical studies of amorphous silicon [Y. Pan et al. Phys. Rev. Lett. 100 206403 (2008)] have revealed subtle but significant structural correlations in network topology: the tendency for short (long) bonds to be spatially correlated with other short (long) bonds). These structures were linked to the electronic band tails in the optical gap. In this paper, we further examine these issues for amorphous silicon, and demonstrate that analogous correlations exist in amorphous SiO2, and in the organic molecule, b-carotene. We conclude with a discussion of the origin of the effects and its possible generality.

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preprint2004arXiv

Experimentally Constrained Molecular Relaxation: The Case of Glassy GeSe2

An ideal atomistic model of a disordered material should contradict no experiments,and should also be consistent with accurate force fields (either {\it ab initio}or empirical). We make significant progress toward jointly satisfying {\it both} of these criteria using a hybrid reverse Monte Carlo approach in conjunction with approximate first principles molecular dynamics. We illustrate the method by studying the complex binary glassy material g-GeSe$_2$. By constraining the model to agree with partial structure factors and {\it ab initio} simulation, we obtain a 647-atom model in close agreement with experiment, including the first sharp diffraction peak in the static structure factor. We compute the electronic state densities and compare to photoelectron spectroscopies. The approach is general and flexible.

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