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Anup Pandey

Anup Pandey appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.comp-ph

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Published work

5 published item(s)

preprint2022arXiv

Machine learning interatomic potential for high throughput screening and optimization of high-entropy alloys

We have developed a machine learning-based interatomic potential (MLIP) for the quaternary MoNbTaW (R4) and quinary MoNbTaTiW (R5) high entropy alloys (HEAs). MLIPs enabled accurate high throughput calculations of elastic and mechanical properties of various non-equimolar R4 and R5 alloys, which are otherwise very time consuming calculations when performed using density functional theory (DFT). We demonstrate that the MLIP predicted properties compare well with the DFT results on various test cases and are consistent with the available experimental data. The MLIPs are also utilized for high throughput optimization of non equimolar R4 candidates by guided iterative tuning of R4 compositions to discover candidate materials with promising hardness-ductility combinations. We also used this approach to study the effect of Ti concentration on the elastic and mechanical properties of R4, by statistically averaging the properties of over 100 random structures. MLIP predicted hardness and bulk modulus of equimolar R4 and R5 HEAs are validated using experimentally measured Vickers hardness and modulus. This approach opens a new avenue for employing MLIPs for HEA candidate optimization.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Machine learning enabled surrogate crystal plasticity model for spatially resolved 3D orientation evolution under uniaxial tension

We present a novel machine learning based surrogate modeling method for predicting spatially resolved 3D microstructure evolution of polycrystalline materials under uniaxial tensile loading. Our approach is orders of magnitude faster than the existing crystal plasticity methods enabling the simulation of large volumes that would be otherwise computationally prohibitive. This work is a major step beyond existing ML-based modeling results, which have been limited to either 2D structures or only providing average, rather than local, predictions. We demonstrate the speed and accuracy of our surrogate model approach on experimentally measured microstructure from high-energy X-ray diffraction microscopy of a face-centered cubic copper sample, undergoing tensile deformation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ab initio model of amorphous zinc oxide (a-ZnO) and a-X_0.375 Z_0.625 O (X=Al, Ga and In)

Density functional theory (DFT) calculations are carried out to study the structure and electronic structure of amorphous zinc oxide (a-ZnO). The models were prepared by the "melt-quench" method. The models are chemically ordered with some coordination defects. The effect of trivalent dopants in the structure and electronic properties of a-ZnO is investigated. Models of a-X_0.375 Z_0.625 O (X=Al, Ga and In) were also prepared by the "melt- quench" method. The trivalent dopants reduce the four-fold Zn and O, thereby introducing some coordination defects in the network. The dopants prefer to bond with O atom. The network topology is discussed in detail. Dopants reduce the gap in EDOS by producing defect states minimum while maintaining the extended nature of the conduction band edge.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Inversion of diffraction data for amorphous materials

The general and practical inversion of diffraction data-producing a computer model correctly representing the material explored - is an important unsolved problem for disordered materials. Such modeling should proceed by using our full knowledge base, both from experiment and theory. In this paper, we describe a robust method to jointly exploit the power of ab initio atomistic simulation along with the information carried by diffraction data. The method is applied to two very different systems: amorphous silicon and two compositions of a solid electrolyte memory material silver-doped GeSe3 . The technique is easy to implement, is faster and yields results much improved over conventional simulation methods for the materials explored. By direct calculation, we show that the method works for both poor and excellent glass forming materials. It offers a means to add a priori information in first principles modeling of materials, and represents a significant step toward the computational design of non-crystalline materials using accurate interatomic interactions and experimental information.

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preprint2016arXiv

Realistic inversion of diffraction data for an amorphous solid: the case of amorphous silicon

We apply a new method "force enhanced atomic refinement" (FEAR) to create a computer model of amorphous silicon (a-Si), based upon the highly precise X-ray diffraction experiments of Laaziri et al. The logic underlying our calculation is to estimate the structure of a real sample a-Si using experimental data and chemical information included in a non-biased way, starting from random coordinates. The model is in close agreement with experiment and also sits at a suitable minimum energy according to density functional calculations. In agreement with experiments, we find a small concentration of coordination defects that we discuss, including their electronic consequences. The gap states in the FEAR model are delocalized compared to a continuous random network model. The method is more efficient and accurate, in the sense of fitting the diffraction data than conventional melt quench methods. We compute the vibrational density of states and the specific heat, and find that both compare favorably to experiments.

0 citations0 reviewsNo code linkedOpen access