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Researcher profile

P. Xu

P. Xu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.opticsquant-phcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conphysics.atom-phCryptography and Securitynucl-exphysics.ins-det

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Trust 21 - EmergingVerification L1Unclaimed author
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Published work

30 published item(s)

preprint2015arXiv

A Pathway between Bernal and Rhombohedral Stacked Graphene Layers with Scanning Tunneling Microscopy

Horizontal shifts in the top layer of highly oriented pyrolytic graphite, induced by a scanning tunneling microscope (STM) tip, are presented. Excellent agreement is found between STM images and those simulated using density functional theory. First-principle calculations identify that the low-energy barrier direction of the top layer displacement is toward a structure where none of the carbon pz orbitals overlap, while the high-energy barrier direction is toward AA stacking. Each directional shift yields a real-space surface charge density similar to graphene; however the low-energy barrier direction requires only one bond length to convert ABA (Bernal) to ABC (rhombohedral).

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Atomic Control of Strain in Freestanding Graphene

In this study, we describe a new experimental approach based on constant-current scanning tunneling spectroscopy to controllably and reversibly pull freestanding graphene membranes up to 35 nm from their equilibrium height. In addition, we present scanning tunneling microscopy (STM) images of freestanding graphene membranes with atomic resolution. Atomic-scale corrugation amplitudes 20 times larger than the STM electronic corrugation for graphene on a substrate were observed. The freestanding graphene membrane responds to a local attractive force created at the STM tip as a highly-conductive yet flexible grounding plane with an elastic restoring force. We indicate possible applications of our method in the controlled creation of pseudo-magnetic fields by strain on single-layer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Atomic-Scale Movement Induced in Nano-Ridges by Scanning Tunneling Microscopy on Epitaxial Graphene Grown on 4H-SiC(0001)

Nanoscale ridges in epitaxial multilayer graphene grown on the silicon face of 4 degree off-cut 4H-SiC (0001) were found using scanning tunneling microscopy (STM). These nano-ridges are only 0.1 nm high and 25-50 nm wide, making them much smaller than previously reported ridges. Atomic-resolution STM was performed near and on top of the nano-ridges using a dual scanning technique in which forward and reverse images are simultaneously recorded. An apparent 100% enlarged graphene lattice constant is observed along the leading edge of the image for both directions. Horizontal movement of the graphene, due to both an electrostatic attraction to the STM tip and weak bonding to the substrate, is thought to contribute to the results.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Broad frequency and amplitude control of vibration in freestanding graphene via scanning tunneling microscopy with calculated dynamic pseudo-magnetic fields

A technique to locally generate mechanical vibrations in freestanding graphene using scanning tunneling microscopy (STM) is presented. The frequency of the mechanical vibrations is tuned over nearly four decades and is centered around 10 Hz. The amplitude of the vibrations also changes over nearly three decades centered on 1 nm. The oscillating motion is generated in two ways: first, by scanning the STM tip on the surface and second, by scanning the bias voltage on the STM tip. The frequency and amplitude of the displaced freestanding graphene is quantitatively transformed to the frequency and strength of the locally generated pseudo-magnetic field for our specific geometry.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface

Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a rotation angle of 5.4° between the top two layers, by comparing moiré patterns from stick and ball models of bilayer graphene to experimentally obtained images. Furthermore, the experimental moiré pattern shows dynamic behavior, continuously shuffling between two stable surface arrangements one bond length apart. The moiré pattern shifts by more than 1 nm, making it easy to observe with STM. Explanation of this dynamic behavior is attributed to electrostatic interactions between the STM tip and the graphene sample.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Controlling Mn Depth Profiles in GaMnAs During High-Temperature Molecular Beam Epitaxial Growth

Mn-doped GaAs thin films were grown at a high substrate temperature of 580 C. During the growth process, the Mn cell temperature was ramped at different rates, resulting in a variety of different Mn concentration depth profile slopes, as measured using dynamic secondary ion mass spectrometry (SIMS). Results show that controlling the Mn deposition rate via temperature during molecular beam epitaxy (MBE) growth can mitigate the effect of Mn atoms diffusing toward the surface. Most importantly, the slope of the Mn concentration as a function of depth inside the sample can be tuned from negative to positive.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electromechanical properties of freestanding graphene functionalized with tin oxide (SnO2) nanoparticles

Freestanding graphene membranes were functionalized with SnO2 nanoparticles. A detailed procedure providing uniform coverage and chemical synthesis is presented. Elemental composition was determined using scanning electron microscopy combined with energy dispersive X-ray analysis. A technique called electrostatic-manipulation scanning tunneling microscopy was used to probe the electromechanical properties of functionalized freestanding graphene samples. We found ten times larger movement perpendicular to the plane compared to pristine freestanding graphene, and propose a nanoparticle encapsulation model.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electronic transition from graphite to graphene via controlled movement of the top layer with scanning tunneling microscopy

A series of measurements using a technique called electrostatic-manipulation scanning tunneling microscopy (EM-STM) were performed on a highly-oriented pyrolytic graphite surface. The electrostatic interaction between the STM tip and the sample can be tuned to produce both reversible and irreversible large-scale movement of the graphite surface. Under this influence, atomic-resolution STM images reveal that a continuous electronic transition from triangular symmetry, where only alternate atoms are imaged, to hexagonal symmetry can be systematically controlled. Density functional theory (DFT) calculations reveal that this transition can be related to vertical displacements of the top layer of graphite relative to the bulk. Evidence for horizontal shifts in the top layer of graphite is also presented. Excellent agreement is found between experimental STM images and those simulated using DFT.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Etch-stop method for reliably fabricating sharp yet mechanically stable scanning tunneling microscope tips

An extension of the direct-current, double-lamella drop-off technique for electrochemically etching tungsten scanning-tunneling-microscope tips is presented. The key fabrication step introduced here is the use of an etch stop as a simple but accurate way to optimize the contact area between the etchant and the wire. By restricting the etching process, the final cone angle of the tips can be made sharp and mechanically stable without a lot of finesse from the STM tip maker.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Generating Searchable Public-Key Ciphertexts with Hidden Structures for Fast Keyword Search

Existing semantically secure public-key searchable encryption schemes take search time linear with the total number of the ciphertexts. This makes retrieval from large-scale databases prohibitive. To alleviate this problem, this paper proposes Searchable Public-Key Ciphertexts with Hidden Structures (SPCHS) for keyword search as fast as possible without sacrificing semantic security of the encrypted keywords. In SPCHS, all keyword-searchable ciphertexts are structured by hidden relations, and with the search trapdoor corresponding to a keyword, the minimum information of therelations is disclosed to a search algorithm as the guidance to find all matching ciphertexts efficiently. We construct a simple SPCHS scheme from scratch in which the ciphertexts have a hidden star-like structure. We prove our scheme to be semantically secure based on the decisional bilinear Diffie-Hellman assumption in the Random Oracle (RO) model. The search complexity of our scheme is dependent on the actual number of the ciphertexts containing the queried keyword, rather than the number of all ciphertexts. Finally, we present a generic SPCHS construction from anonymous identity-based encryption and collision-free full-identity malleable Identity-Based Key Encapsulation Mechanism (IBKEM) with anonymity. We illustrate two collision-free full-identity malleable IBKEM instances, which are semantically secure and anonymous, respectively, in the RO and standard models. The latter instance enables us to construct an SPCHS scheme with semantic security in the standard model.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Giant Surface Charge Density of Graphene Resolved From Scanning Tunneling Microscopy and First-Principles Theory

In this work, systematic constant-bias, variable-current scanning tunneling microscopy (STM) measurements and STM simulations from density-functional theory are made, yielding critical insights into the spatial structure of electrons in graphene. A foundational comparison is drawn between graphene and graphite, showing the surface charge density of graphene to be 300 percent that of graphite. Furthermore, simulated STM images reveal that high-current STM better resolves graphenes honeycomb bonding structure because of a retraction which occurs in the topmost dangling bond orbitals.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy

Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to ~5 nN was exerted by the STM tip, and an energy of around 10 eV was required to alter the geometry of a ~100 X 200 nm^2 area.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Graphene Ripples as a Realization of a Two-Dimensional Ising Model: A Scanning Tunneling Microscope Study

Ripples in pristine freestanding graphene naturally orient themselves in an array that is alternately curved-up and curved-down; maintaining an average height of zero. Using scanning tunneling microscopy (STM) to apply a local force, the graphene sheet will reversibly rise and fall in height until the height reaches 60-70 percent of its maximum at which point a sudden, permanent jump occurs. We successfully model the ripples as a spin-half Ising magnetic system, where the height of the graphene is the spin. The permanent jump in height, controlled by the tunneling current, is found to be equivalent to an antiferromagnetic-to-ferromagnetic phase transition. The thermal load underneath the STM tip alters the local tension and is identified as the responsible mechanism for the phase transition. Four universal critical exponents are measured from our STM data, and the model provides insight into the statistical role of graphenes unusual negative thermal expansion coefficient.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High-Percentage Success Method for Preparing and Pre-Evaluating Tungsten Tips for Atomic-Resolution Scanning Tunneling Microscopy

A custom double-lamella method is presented for electrochemically etching tungsten wire for use as tips in scanning tunneling microscopy (STM). For comparison, tips were also manufactured in-house using numerous conventional methods and examined using an optical microscope. Both sets of tips were used to obtain STM images of highly-oriented pyrolytic graphite, the quality of which varied. The clarity of the STM images was found to be correlated to the optically-measured cone angle of the STM tip, with larger cone angles consistently producing atomically resolved images. The custom etching procedure described allows one to create larger cone angles and consequently proved superior in reliably producing high-quality tips.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

New Scanning Tunneling Microscopy Technique Enables Systematic Study of the Unique Electronic Transition from Graphite to Graphene

A series of measurements using a novel technique called electrostatic-manipulation scanning tunneling microscopy were performed on a highly-oriented pyrolytic graphite (HOPG) surface. The electrostatic interaction between the STM tip and the sample can be tuned to produce both reversible and irreversible large-scale vertical movement of the HOPG surface. Under this influence, atomic-resolution STM images reveal that a continuous electronic reconstruction transition from a triangular symmetry, where only alternate atoms are imaged, to a honeycomb structure can be systematically controlled. First-principles calculations reveal that this transition can be related to vertical displacements of the top layer of graphite relative to the bulk. Detailed analysis of the band structure predicts that a transition from parabolic to linear bands occurs after a 0.09 nm displacement of the top layer.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Reduction of the dc electric field sensitivity of circular Rydberg states using non-resonant dressing fields

Non-resonant dressing fields can make the transition frequency between two circular Rydberg states insensitive to second order variations in the dc electric field. Perturbation theory can be used to establish the required dressing field amplitude and frequency. The same perturbative approach may be used to understand removal of the first order dependence of the transition frequency on electric field about a bias dc electric field [Hyafil et al. Phys. Rev. Lett., v. 93, 103001 (2004)]. The directional alignment of the dressing and dc fields is critical in determining the electric field sensitivity of the dressed transition frequencies. This sensitivity is significantly larger for circular Rydberg states compared to low-angular momentum Rydberg states of Rb.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Role of bias voltage and tunneling current in the perpendicular displacements of freestanding graphene via scanning tunneling microscopy

Systematic displacement measurements of freestanding graphene as a function of applied bias voltage and tunneling current setpoint using scanning tunneling microscopy (STM) are presented. When the bias voltage is increased the graphene approaches the STM tip, while, on the other hand, when the tunneling current is increased the graphene contracts from the STM tip. To understand the role of the bias voltage, we quantitatively model the attractive force between the tip and the sample using electrostatics. For the tunneling current, we qualitatively model the contraction of the graphene using entropic concepts. These complementary results enhance the understanding of each other and highlight peculiarities of the system.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Schottky barrier and attenuation length for hot hole injection in non-epitaxial Au on p-type GaAs

Ballistic electron emission microscopy (BEEM) was performed to obtain nanoscale current versus bias characteristics of non-epitaxial Au on p-type GaAs in order to accurately measure the local Schottky barrier height. Hole injection BEEM data was averaged from thousands of spectra for various metal film thicknesses and then used to determine the attenuation length of the energetic charge carriers as a function of tip bias. We report the marked increase in attenuation length at biases near the Schottky barrier, providing evidence for the existence of coherent BEEM currents in Schottky diodes. These results provide additional evidence against the randomization of a charge carrier's momentum at the metal-semiconductor interface.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Integrated Quantum Controlled-NOT Gate Based on Dielectric-Loaded Surface Plasmon Polariton Waveguide

It has been proved that surface plasmon polariton (SPP) can well conserve and transmit the quantum nature of entangled photons. Therefore, further utilization and manipulation of such quantum nature of SPP in a plasmonic chip will be the next task for scientists in this field. In quantum logic circuits, the controlled-NOT (CNOT) gate is the key building block. Here, we implement the first plasmonic quantum CNOT gate with several-micrometer footprint by utilizing a single polarization-dependent beam-splitter (PDBS) fabricated on the dielectric-loaded SPP waveguide (DLSPPW). The quantum logic function of the CNOT gate is characterized by the truth table with an average fidelity of. Its entangling ability to transform a separable state into an entangled state is demonstrated with the visibilities of and for non-orthogonal bases. The DLSPPW based CNOT gate is considered to have good integratability and scalability, which will pave a new way for quantum information science.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy

Twisted graphene layers produce a moiré pattern (MP) structure with a predetermined wavelength for given twist angle. However, predicting the membrane corrugation amplitude for any angle other than pure AB-stacked or AA-stacked graphene is impossible using first-principles density functional theory (DFT) due to the large supercell. Here, within elasticity theory we define the MP structure as the minimum energy configuration, thereby leaving the height amplitude as the only unknown parameter. The latter is determined from DFT calculations for AB and AA stacked bilayer graphene in order to eliminate all fitting parameters. Excellent agreement with scanning tunneling microscopy (STM) results across multiple substrates is reported as function of twist angle.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC

Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moiré patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals information about the interplay between the energy required to bend graphene and the interaction energy, i.e. van der Waals energy, with the graphene layer below. Our experiments are supported by theoretical calculations which predict that the membrane topographical amplitude scales with the Moiré pattern wavelength, L as L^-1 + αL^-2.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Precision measurement of transverse velocity distribution of a strontium atomic beam

We measure the transverse velocity distribution in a thermal Sr atomic beam precisely by velocity-selective saturated fluorescence spectroscopy. The use of an ultrastable laser system and the narrow intercombination transition line of Sr atoms mean that the resolution of the measured velocity can reach 0.13 m/s, corresponding to 90$μK$ in energy units. The experimental results are in very good agreement with the results of theoretical calculations. Based on the spectroscopic techniques used here, the absolute frequency of the intercombination transition of $^{88}$Sr is measured using an optical-frequency comb generator referenced to the SI second through an H maser, and is given as 434 829 121 318(10) kHz.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Reconfigurable on-chip entangled sources based on lithium-niobate waveguide circuits

Integrated quantum optics becomes a consequent tendency towards practical quantum information processing. Here, we report the on-chip generation and manipulation of photonic entanglement based on reconfigurable lithium niobate waveguide circuits. By introducing periodically poled structure into the waveguide interferometer, two individual photon-pair sources with controllable phase-shift are produced and cascaded by a quantum interference, resulting in a deterministically separated identical photon pair. The state is characterized by 92.9% visibility Hong-Ou-Mandel interference. Continuous morphing from two-photon separated state to bunched state is further demonstrated by on-chip control of electro-optic phase-shift. The photon flux reaches ~1.4*10^7 pairs nm-1 mW-1. Our work presents a scenario for on-chip engineering of different photon sources and paves a way to the fully integrated quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Thermal mirror buckling in freestanding graphene locally controlled by scanning tunneling microscopy

Knowledge of and control over the curvature of ripples in freestanding graphene are desirable for fabricating and designing flexible electronic devices, and recent progress in these pursuits has been achieved using several advanced techniques such as scanning tunneling microscopy. The electrostatic forces induced through a bias voltage (or gate voltage) were used to manipulate the interaction of freestanding graphene with a tip (substrate). Such forces can cause large movements and sudden changes in curvature through mirror buckling. Here we explore an alternative mechanism, thermal load, to control the curvature of graphene. We demonstrate thermal mirror buckling of graphene by scanning tunneling microscopy and large-scale molecular dynamic simulations. The negative thermal expansion coefficient of graphene is an essential ingredient in explaining the observed effects. This new control mechanism represents a fundamental advance in understanding the influence of temperature gradients on the dynamics of freestanding graphene and future applications with electro-thermal-mechanical nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Unusual ultralow frequency fluctuations in freestanding graphene

Intrinsic ripples in freestanding graphene have been exceedingly difficult to study. Individual ripple geometry was recently imaged using scanning tunneling microscopy, but these measurements are limited to static configurations. Thermally-activated flexural phonon modes should generate dynamic changes in curvature. Here we show how to track the vertical movement of a one-square-angstrom region of freestanding graphene using scanning tunneling microscopy, thereby allowing measurement of the out-of-plane time trajectory and fluctuations over long time periods. We also present a model from elasticity theory to explain the very-low-frequency oscillations. Unexpectedly, we sometimes detect a sudden colossal jump, which we interpret as due to mirror buckling. This innovative technique provides a much needed atomic-scale probe for the time-dependent behavior of intrinsic ripples. The discovery of this novel progenitor represents a fundamental advance in the use of scanning tunneling microscopy, which together with the application of a thermal load provides a low-frequency nano-resonator.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Compact engineering of path-entangled sources from a monolithic quadratic nonlinear photonic crystal

Photonic entangled states lie at the heart of quantum science for the demonstrations of quantum mechanics foundations and supply as a key resource for approaching various quantum technologies. An integrated realization of such states will certainly guarantee a high-degree of entanglement and improve the performance like portability, stability and miniaturization, hence becomes an inevitable tendency towards the integrated quantum optics. Here, we report the compact realization of steerable photonic path-entangled states from a monolithic quadratic nonlinear photonic crystal. The crystal acts as an inherent beam splitter to distribute photons into coherent spatial modes, producing the heralded single-photon even appealing beamlike two-photon path-entanglement, wherein the entanglement is characterized by quantum spatial beatings. Such multifunctional entangled source can be further extended to high-dimensional fashion and multi-photon level as well as involved with other degrees of freedom, which paves a desirable way to engineer miniaturized quantum light source.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Measurement of magnetic excitations in the two-dimensional antiferromagnetic Sr2CuO2Cl2 insulator using resonant x-ray scattering:Evidence for extended interactions

Using high-resolution resonant inelastic x-ray scattering (RIXS), we performed a momentum-resolved study of magnetic excitations in the model spin-1/2 2D antiferromagnetic insulator Sr_2CuCl_2O_2. We identify both a single-spin-wave feature and a multi-magnon continuum, and show that the X-ray polarization can be used to distinguish these two contributions in the cross-section. The spin-waves display a large (70 meV) dispersion between the zone-boundary points ($π$,0) and ($π$/2,$π$/2). Employing an extended $t$-$t'$-$t"$-$U$ one-band Hubbard model, we find significant electronic hopping beyond nearest-neighbor Cu ions. We conclude that sizeable extended magnetic interactions are present in \scoc{} and probably important in all undoped cuprates.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Occurrence of superconductivity when the metal-insulator transition is inhibited in $1T$-TaS${_2}$

When a Mott metal-insulator transition is inhibited by a small amount of disorder in the layered dichalcogenide 1T-TaS$_2$, an inhomogeneous superconducting state arises below T=2.1 K, and coexists with a nearly-commensurate charge-density-wave. By angle-resolved photoelectron spectroscopy (ARPES) we show that it emerges from a bad metal state with strongly damped quasiparticles. Superconductivity is almost entirely suppressed by an external magnetic field of 0.1 T.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Suppression MHD instabilities by IBW heating in HT-7 Tokamak

In HT-7 tokamak, the m= 2/1 tearing mode can be effectively suppressed by the ion bernstein wave (IBW) when the location of power deposition is near the q=2 rational surface. Off-axis electron heating and greatly increase of electron density was observed, in the meantime, the particle confinement appears to be improved with the increased of the central line averaged electron density and the drop of Da emission. Induced large ne gradients and pressures were spatially correlated with the IBW deposition profile by theoretical calculation >. It is suggested that off-axis IBW heating modifies the electron pressure profile, and so the current density profile could be redistributed resulting in the suppression of the magnetohydrodynamics (MHD) instability. It provides an integrated way for making combined effects on both the stabilization of tearing modes and controlling of pressure profile.

0 citations0 reviewsNo code linkedOpen access