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P. Ryan

P. Ryan contributes to research discovery and scholarly infrastructure.

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Published work

11 published item(s)

preprint2015arXiv

Engineered Mott ground state in LaTiO$_{3+δ}$/LaNiO$_3$ heterostructure

In pursuit of creating cuprate-like electronic and orbital structures, artificial heterostructures based on LaNiO$_3$ have inspired a wealth of exciting experimental and theoretical results. However, to date there is a very limited experimental understanding of the electronic and orbital states emerging after interfacial charge-transfer and their connections to the modified band structure at the interface. Towards this goal, we have synthesized a prototypical superlattice composed of correlated metal LaNiO$_3$ and doped Mott insulator LaTiO$_{3+δ}$, and investigated its electronic structure by resonant X-ray absorption spectroscopy combined with X-ray photoemission spectroscopy, electrical transport and theory calculations. The heterostructure exhibits interfacial charge-transfer from Ti to Ni sites giving rise to an insulating ground state with orbital polarization and $e_\textrm{g}$ orbital band splitting. Our findings demonstrate how the control over charge at the interface can be effectively used to create exotic electronic, orbital and spin states.

preprint2015arXiv

Epitaxial Growth of (1 1 1)-Oriented Spinel CoCr$_2$O$_4$/Al$_2$O$_3$ Heterostructures

High quality (1 1 1)-oriented CoCr$_2$O$_4$/Al$_2$O$_3$ heterostructures were synthesized on the sapphire (0 0 0 1) single crystal substrates in a layer-by-layer mode. The structural properties are demonstrated by $in$-$situ$ reflection high energy electron diffraction, atomic force microscopy, X-ray reflectivity and X-ray diffraction. X-ray photoemission spectroscopy confirms that the films possess the proper chemical stoichiometry. This work offers a pathway to fabricating spinel type artificial quasi-two-dimensional frustrated lattices by means of geometrical engineering.

preprint2015arXiv

Response to Comment (arXiv:1506.02787v1) on Selective Interface Control of Order Parameters in Complex Oxides

In response to Lu et al, (arXiv:1506.02787v1), here we present a detailed writeup concerning the questions raised in their comment on our eprint (arXiv:1505.07451). The key question raised by Lu et al was if the bulk-like charge ordered state becomes indetectable with resonant scattering due to ultrathin film thickness. In this reply, we first detail the relation of our work to past work on the same compound by Staub et al to demonstrate that the presented data are indeed sufficient to support our claims of no charge order on ultra thin films of NdNiO3 (NNO) on NdGaO3 (NGO). Further, we demonstrate that if a well defined charge ordered phase exists in ultra thin films, it is indeed resolvable such as that in EuNiO3 (ENO).

preprint2014arXiv

Epitaxial stabilization of ultra thin films of electron doped manganites

Ultra-thin films of the electron doped manganite La$_{0.8}$Ce$_{0.2}$MnO$_3$ were grown in a layer-by-layer growth mode on SrTiO$_3$ (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology was confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce$^{+4}$ and Mn$^{+2}$ ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show ferromagnetic ground state as revealed by both XMCD and magnetoresistance measurements and remain insulating contrary to earlier reports of metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive (CMR) manganite phase diagram akin to high-$T_c$ cuprates.

preprint2012arXiv

Metal-insulator transition and orbital reconstruction in Mott quantum wells of NdNiO$_{3}$

The metal-insulator transition (MIT) and the underlying electronic and orbital structure in $e_{g}^{1}$ quantum wells based on NdNiO$_{3}$ was investigated by d.c. transport and resonant soft x-ray absorption spectroscopy. By comparing quantum wells of the same dimension but with two different confinement structures, we explicitly demonstrate that the quantum well boundary condition of correlated electrons is critical to selecting the many-body ground state. In particular, the long-range orderings and the MIT are found to be strongly enhanced under quantum confinement by sandwiching NdNiO$_{3}$ with the wide-gap dielectric LaAlO$_{3}$, while they are suppressed when one of the interfaces is replaced by a surface (interface with vacuum). Resonant spectroscopy reveals that the reduced charge fluctuations in the sandwich structure are supported by the enhanced propensity to charge ordering due to the suppressed $e_g$ orbital splitting when interfaced with the confining LaAlO$_{3}$ layer.

preprint2012arXiv

Orbital control in strained ultra-thin LaNiO$_3$/LaAlO$_3$ superlattices

In pursuit of rational control of orbital polarization, we present a combined experimental and theoretical study of single unit cell superlattices of the correlated metal LaNiO$_3$ and the band insulator LaAlO$_3$. Polarized x-ray absorption spectra show a distinct asymmetry in the orbital response under strain. A splitting of orbital energies consistent with octahedral distortions is found for the case of compressive strain. In sharp contrast, for tensile strain, no splitting is found although a strong orbital polarization is present. Density functional theory calculations including a Hubbard U term reveal that this asymmetry is a result of the interplay of strain and confinement induces octahedral rotations and distortions and altered covalency in the bonding across the interfacial Ni-O-Al apical oxygen, leading to a charge disporportionation at the Ni sites for tensile strain.

preprint2011arXiv

Quantum confinement of Mott electrons in ultrathin LaNiO3/LaAlO3 superlattice

We investigate the electronic reconstruction in (LaNiO$_{3}$)$_n$/(LaAlO$_{3}$)$_3$ (n=3, 5 and 10) superlattices due to the quantum confinement (QC) by d.c. transport and resonant soft x-ray absorption spectroscopy. In proximity to the QC limit, a Mott-type transition from an itinerant electron behavior to a localized state is observed. The system exhibits tendency towards charge-order during the transition. ab initio cluster calculations are in good agreement with the absorption spectra, indicating that the apical ligand hole density is highly suppressed resulting in a strong modification of the electronic structure. At the dimensional crossover cellular dynamical-mean-field calculations support the emergence of a Mott insulator ground state in the heterostructured ultra-thin slab of LaNiO$_{3}$.

preprint2010arXiv

Effect of polar discontinuity on the growth of LaNiO3/LaAlO3 superlattices

We have conducted a detailed microscopic investigation of [LaNiO3(1 u.c.)/LaAlO3(1 u.c.)]N superlattices grown on (001) SrTiO3 and LaAlO3 to explore the influence of polar mismatch on the resulting electronic and structural properties. Our data demonstrate that the initial growth on the non-polar SrTiO3 surface leads to a rough morphology and unusual 2+ valence of Ni in the first LaNiO3 layer, which is not observed after growth on the polar surface of LaAlO3. A newly devised model suggests that the polar mismatch can be resolved if the perovskite layers grow with an excess of LaO, which also accounts for the observed electronic, chemical, and structural effects.

preprint2010arXiv

Strain-mediated metal-insulator transition in epitaxial ultra-thin films of NdNiO3

We have synthesized epitaxial NdNiO$_{3}$ ultra-thin films in a layer-by-layer growth mode under tensile and compressive strain on SrTiO$_{3}$ (001) and LaAlO$_3$ (001), respectively. A combination of X-ray diffraction, temperature dependent resistivity, and soft X-ray absorption spectroscopy has been applied to elucidate electronic and structural properties of the samples. In contrast to the bulk NdNiO$_{3}$, the metal-insulator transition under compressive strain is found to be completely quenched, while the transition remains under the tensile strain albeit modified from the bulk behavior.

preprint2010arXiv

Sub-monolayer nucleation and growth of complex oxide heterostructures at high supersaturation and rapid flux modulation

We report on the non-trivial nanoscale kinetics of the deposition of novel complex oxide heterostructures composed of a unit-cell thick correlated metal LaNiO3 and dielectric LaAlO3. The multilayers demonstrate exceptionally good crystallinity and surface morphology maintained over the large number of layers, as confirmed by AFM, RHEED, and synchrotron X-ray diffraction. To elucidate the physics behind the growth, the temperature of the substrate and the deposition rate were varied over a wide range and the results were treated in the framework of a two-layer model. These results are of fundamental importance for synthesis of new phases of complex oxide heterostructures.

preprint2007arXiv

Nanoscale Suppression of Magnetization at Atomically Assembled Manganite Interfaces

Using polarized X-rays, we compare the electronic and magnetic properties of a La(2/3)Sr(1/3)MnO(3)(LSMO)/SrTiO(3)(STO) and a modified LSMO/LaMnO(3)(LMO)/STO interface. Using the technique of X-ray resonant magnetic scattering (XRMS), we can probe the interfaces of complicated layered structures and quantitatively model depth-dependent magnetic profiles as a function of distance from the interface. Comparisons of the average electronic and magnetic properties at the interface are made independently using X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD). The XAS and the XMCD demonstrate that the electronic and magnetic structure of the LMO layer at the modified interface is qualitatively equivalent to the underlying LSMO film. From the temperature dependence of the XMCD, it is found that the near surface magnetization for both interfaces falls off faster than the bulk. For all temperatures in the range of 50K - 300K, the magnetic profiles for both systems always show a ferromagnetic component at the interface with a significantly suppressed magnetization that evolves to the bulk value over a length scale of ~1.6 - 2.4 nm. The LSMO/LMO/STO interface shows a larger ferromagnetic (FM) moment than the LSMO/STO interface, however the difference is only substantial at low temperature.