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M. Kareev

M. Kareev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hall

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Published work

33 published item(s)

preprint2022arXiv

Magnetic Order Driven Ultrafast Phase Transition in NdNiO$_3$

Ultrashort x-ray pulses can be used to disentangle magnetic and structural dynamics and are accordingly utilized here to study the photoexcitation of NdNiO$_3$ (NNO), a model nickelate exhibiting structural and magnetic dynamics that conspire to induce an IMT. During the course of the photoinduced insulator to metal transition (IMT) with above gap excitation, we observe an ultrafast ($<$ 180 fs) quenching of magnetic order followed by a time delayed collapse of the insulating phase probed by X-ray absorption and THz transmission (~ 450 fs) that correlates with the slowest optical phonon mode involved in the structural transition. A simultaneous order-disorder response at the Ni site and displacive response at the Nd site coexist in the ultrafast magnetic response. Crucially, we observe the optical phonon through its coherent coupling with Nd magnetic order, demonstrating that the magnetic and structural degrees of freedom both contribute in driving the IMT. Density functional theory (DFT) calculations reveal a consistent scenario where optically driven inter-site charge transfer (ICT) drives a collapse of antiferromagnetic order that in turn destabilizes the charge-ordered phase resulting in an IMT. These experiments provide new modalities for control of electronic phase transitions in quantum materials based on ultrafast interplay between structural and magnetic orders created by femtosecond photoexcitation.

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preprint2020arXiv

Probing electronic and magnetic transitions of short periodic nickelate superlattices using synchrotron x-ray

Transition metal based oxide heterostructures exhibit diverse emergent phenomena e.g. two dimensional electron gas, superconductivity, non-collinear magnetic phase, ferroelectricity, polar vortices, topological Hall effect etc., which are absent in the constituent bulk oxides. The microscopic understandings of these properties in such nanometer thick materials are extremely challenging. Synchrotron x-ray based techniques such as x-ray diffraction, x-ray absorption spectroscopy (XAS), resonant x-ray scattering (RXS), resonant inelastic x-ray scattering (RIXS), x-ray photoemission spectroscopy, etc. are essential to elucidating the response of lattice, charge, orbital, and spin degrees of freedoms to the heterostructuring. As a prototypical case of complex behavior, rare-earth nickelates (RENiO3 with RE=La, Pr, Nd, Sm, Eu, Lu) based thin films and heterostructures have been investigated quite extensively in recent years. An extensive body of literature about these systems exists and for an overview of the field, we refer the interested readers to the recent reviews Annual Review of Materials Research 46, 305 (2016) and Reports on Progress in Physics 81, 046501 (2018). In the present article, we give a brief review that concentrates on the use of synchrotron based techniques to investigate a specific set of EuNiO3/LaNiO3 superlattices, specifically designed to solve a long-standing puzzle about the origin of simultaneous electronic, magnetic and structural transitions of the RENiO3 series.

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preprint2019arXiv

Electronic structure of a graphene-like artificial crystal of $NdNiO_3$

Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes, with typical information depths of a few Angstroms. Here, we use a combination of bulk-sensitive soft x-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard x-ray photoelectron spectroscopy (HAXPES) and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of $NdNiO_3$ confined between two 4-unit cell-thick layers of insulating $LaAlO_3$. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band (VB) bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.

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preprint2019arXiv

Emergent magnetic state in (111)-oriented quasi-two-dimensional spinel oxides

We report on the emergent magnetic state of (111)-oriented CoCr2O4 ultrathin films sandwiched by Al2O3 in the quantum confined geometry. At the two-dimensional crossover, polarized neutron reflectometry reveals an anomalous enhancement of the total magnetization compared to the bulk value. Synchrotron x-ray magnetic circular dichroism (XMCD) demonstrates the appearance of long-range ferromagnetic ordering of spins on both Co and Cr sublattices. Brillouin function analyses further corroborates that the observed phenomena are due to the strongly altered magnetic frustration, manifested by the onset of a Yafet-Kittel type ordering as the new ground state in the ultrathin limit, which is unattainable in the bulk.

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preprint2019arXiv

Unconventional crystal field splitting in non-centrosymmetric BaTiO$_3$ thin films

Understanding the crystal field splitting and orbital polarization in non-centrosymmetric systems such as ferroelectric materials is fundamentally important. In this study, taking BaTiO$_3$ (BTO) as a representative material we investigate titanium crystal field splitting and orbital polarization in non-centrosymmetric TiO$_6$ octahedra with resonant X-ray linear dichroism at Ti $L_{2,3}$-edge. The high-quality BaTiO$_3$ thin films were deposited on DyScO$_3$ (110) single crystal substrates in a layer-by-layer way by pulsed laser deposition. The reflection high-energy electron diffraction (RHEED) and element specific X-ray absorption spectroscopy (XAS) were performed to characterize the structural and electronic properties of the films. In sharp contrast to conventional crystal field splitting and orbital configuration ($d_{xz}$/$d_{yz}$ $<$ $d_{xy}$ $<$ $d_{3z^2-r^2}$ $<$ $d_{x^2-y^2}$ or $d_{xy}$ $<$ $d_{xz}$/$d_{yz}$ $<$ $d_{x^2-y^2}$ $<$ $d_{3z^2-r^2}$) according to Jahn-Teller effect, it is revealed that $d_{xz}$, $d_{yz}$, and $d_{xy}$ orbitals are nearly degenerate, whereas $d_{3z^2-r^2}$ and $d_{x^2-y^2}$ orbitals are split with an energy gap $\sim$ 100 meV in the epitaxial BTO films. The unexpected degenerate states $d_{xz}$/$d_{yz}$/$d_{xy}$ are coupled to Ti-O displacements resulting from competition between polar and Jahn-Teller distortions in non-centrosymmetric TiO$_6$ octhedra of BTO films. Our results provide a route to manipulate orbital degree of freedom by switching electric polarization in ferroelectric materials.

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preprint2016arXiv

Anomalous orbital structure in a spinel-perovskite interface $γ$-Al$_2$O$_3$/SrTiO$_3$

In all archetypical reported (001)-oriented perovskite heterostructures, it has been deduced that the preferential occupation of two-dimensional electron gases is in-plane $d_\textrm{xy}$ state. In sharp contrast to this, the investigated electronic structure of a spinel-perovskite heterostructure $γ$-Al$_2$O$_3$/SrTiO$_3$ by resonant soft X-ray linear dichroism, demonstrates that the preferential occupation is out-of-plane $d_\textrm{xz}$/$d_\textrm{yz}$ states for interfacial electrons. Moreover, the impact of strain further corroborates that this anomalous orbital structure can be linked to the altered crystal field at the interface and symmetry breaking of the interfacial structural units. Our findings provide another interesting route to engineer emergent quantum states with deterministic orbital symmetry.

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preprint2016arXiv

Geometrical lattice engineering of complex oxide heterostructures: a designer approach to emergent quantum states

Epitaxial heterostructures composed of complex oxides have fascinated researchers for over a decade as they offer multiple degrees of freedom to unveil emergent many-body phenomena often unattainable in bulk. Recently, apart from stabilizing such artificial structures along the conventional [001]-direction, tuning the growth direction along unconventional crystallographic axes has been highlighted as a promising route to realize novel quantum many-body phases. Here we illustrate this rapidly developing field of geometrical lattice engineering with the emphasis on a few prototypical examples of the recent experimental efforts to design complex oxide heterostructures along the (111) orientation for quantum phase discovery and potential applications.

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preprint2016arXiv

Magnetic interactions at the nanoscale in trilayer titanates LaTiO$_3$/SrTiO$_3$/YTiO$_3$

We report on the phase diagram of competing magnetic interactions at nanoscale in engineered ultra-thin trilayer heterostructures of LaTiO$_{3}$/SrTiO$_{3}$/YTiO$_{3}$, in which the interfacial inversion symmetry is explicitly broken. Combined atomic layer resolved scanning transmission electron microscopy with electron energy loss spectroscopy and electrical transport have confirmed the formation of a spatially separated two-dimensional electron liquid and high density two-dimensional localized magnetic moments at the LaTiO$_3$/SrTiO$_3$ and SrTiO$_3$/YTiO$_3$ interfaces, respectively. Resonant soft X-ray linear dichroism spectroscopy has demonstrated the presence of orbital polarization of the conductive LaTiO$_3$/SrTiO$_3$ and localized SrTiO$_3$/YTiO$_3$ electrons. Our results provide a route with prospects for exploring new magnetic interfaces, designing tunable two-dimensional $d$-electron Kondo lattice, and potential spin Hall applications.

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preprint2016arXiv

Mott Electrons in an Artificial Graphenelike Crystal of Rare-Earth Nickelate

Deterministic control over the periodic geometrical arrangement of the constituent atoms is the backbone of the material properties, that along with the interactions define the electronic and magnetic ground state. Following this notion, a bilayer of a prototypical rare-earth nickelate, NdNiO$_3$, combined with a dielectric spacer, LaAlO$_3$, has been layered along the pseudo cubic [111] direction. The resulting artificial graphene-like Mott crystal with magnetic 3$d$ electrons has antiferromagnetic correlations. In addition, a combination of resonant X-ray linear dichroism measurements and \textit{ab-initio} calculations reveal the presence of an ordered orbital pattern, which is unattainable in either bulk nickelates or nickelate based heterostructures grown along the [001] direction. These findings highlight another promising venue towards designing new quantum many-body states by virtue of geometrical engineering.

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preprint2016arXiv

Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures

The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high $T_c$ superconductor YBa$_2$Cu$_3$O$_7$ (YBCO) and colossal magnetoresistance ferromagnet La$_{0.67}$Ca$_{0.33}$MnO$_3$ (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping in cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may response to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Such deterministic control of $T_c$ by pure electronic doping without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.

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preprint2015arXiv

Engineered Mott ground state in LaTiO$_{3+δ}$/LaNiO$_3$ heterostructure

In pursuit of creating cuprate-like electronic and orbital structures, artificial heterostructures based on LaNiO$_3$ have inspired a wealth of exciting experimental and theoretical results. However, to date there is a very limited experimental understanding of the electronic and orbital states emerging after interfacial charge-transfer and their connections to the modified band structure at the interface. Towards this goal, we have synthesized a prototypical superlattice composed of correlated metal LaNiO$_3$ and doped Mott insulator LaTiO$_{3+δ}$, and investigated its electronic structure by resonant X-ray absorption spectroscopy combined with X-ray photoemission spectroscopy, electrical transport and theory calculations. The heterostructure exhibits interfacial charge-transfer from Ti to Ni sites giving rise to an insulating ground state with orbital polarization and $e_\textrm{g}$ orbital band splitting. Our findings demonstrate how the control over charge at the interface can be effectively used to create exotic electronic, orbital and spin states.

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preprint2015arXiv

Epitaxial Growth of (1 1 1)-Oriented Spinel CoCr$_2$O$_4$/Al$_2$O$_3$ Heterostructures

High quality (1 1 1)-oriented CoCr$_2$O$_4$/Al$_2$O$_3$ heterostructures were synthesized on the sapphire (0 0 0 1) single crystal substrates in a layer-by-layer mode. The structural properties are demonstrated by $in$-$situ$ reflection high energy electron diffraction, atomic force microscopy, X-ray reflectivity and X-ray diffraction. X-ray photoemission spectroscopy confirms that the films possess the proper chemical stoichiometry. This work offers a pathway to fabricating spinel type artificial quasi-two-dimensional frustrated lattices by means of geometrical engineering.

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preprint2015arXiv

Magnetism and electronic structure of YTiO$_3$ thin films

High-quality (001)-oriented (pseudo-cubic notation) ferromagnetic YTiO$_3$ thin films were epitaxially synthesized in a layer-by-layer way by pulsed laser deposition. Structural, magnetic and electronic properties were characterized by reflection-high-energy-electron-diffraction, X-ray diffraction, vibrating sample magnetometry, and element-resolved resonant soft X-ray absorption spectroscopy. To reveal ferromagnetism of the constituent titanium ions, X-ray magnetic circular dichroism spectroscopy was carried out using four detection modes probing complimentary spatial scale, which overcomes a challenge of probing ferromagnetic titanium with pure Ti3+(3d$^1$). Our work provides a pathway to distinguish between the roles of titanium and A-site magnetic rare-earth cations in determining the magnetism in rare-earth titanates thin films and heterostructures.

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preprint2015arXiv

Metallic interface in non-SrTiO3 based titanate superlattice

We report on the fabrication of all perovskite Mott insulator/band insulator YTiO3/CaTiO3 superlattices by pulsed laser deposition. The combination of in situ reflection high energy electron diffraction, X-ray diffraction, and X-ray reflectivity confirms the high quality of the films grown in a layer-by-layer mode. Electrical transport measurements reveal that a non-SrTiO3 based two dimensional electron gas system has formed at the YTiO3/CaTiO3 interface. These studies offer another route in the pursuit of complex oxide two-dimensional electron gas systems, which allows to obtain greater insights into the exotic many-body phenomena at such interfaces.

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preprint2015arXiv

Response to Comment (arXiv:1506.02787v1) on Selective Interface Control of Order Parameters in Complex Oxides

In response to Lu et al, (arXiv:1506.02787v1), here we present a detailed writeup concerning the questions raised in their comment on our eprint (arXiv:1505.07451). The key question raised by Lu et al was if the bulk-like charge ordered state becomes indetectable with resonant scattering due to ultrathin film thickness. In this reply, we first detail the relation of our work to past work on the same compound by Staub et al to demonstrate that the presented data are indeed sufficient to support our claims of no charge order on ultra thin films of NdNiO3 (NNO) on NdGaO3 (NGO). Further, we demonstrate that if a well defined charge ordered phase exists in ultra thin films, it is indeed resolvable such as that in EuNiO3 (ENO).

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preprint2015arXiv

Selective Interface Control of Order Parameters in Complex Oxides

In complex materials observed electronic phases and transitions between them often involves coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to a purely electronic Mott metal-insulator transition.

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preprint2014arXiv

Electronic and magnetic properties of (1 1 1)-oriented CoCr2O4 epitaxial thin film

We report on the fabrication of high quality (1 1 1)-oriented ferrimagnetic normal spinel CoCr2O4 epitaxial thin films on single crystal Al2O3 substrates. The structural, electronic and magnetic properties were characterized by in-situ reflection high energy electron diffraction, atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, SQUID magnetometry and element resolved resonant X-ray magnetic scattering. The comprehensive characterization reveals that no disorder in the cation distribution or multivalency issue is present in the samples. As a result, Kagome and triangular layers are naturally formed via this specific growth approach. These findings offer a pathway to fabricate two dimensional Kagome heterostructures with novel quantum many-body phenomena by means of geometrical design.

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preprint2014arXiv

Epitaxial stabilization of ultra thin films of electron doped manganites

Ultra-thin films of the electron doped manganite La$_{0.8}$Ce$_{0.2}$MnO$_3$ were grown in a layer-by-layer growth mode on SrTiO$_3$ (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology was confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce$^{+4}$ and Mn$^{+2}$ ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show ferromagnetic ground state as revealed by both XMCD and magnetoresistance measurements and remain insulating contrary to earlier reports of metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive (CMR) manganite phase diagram akin to high-$T_c$ cuprates.

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preprint2014arXiv

Polar catastrophe in ultra-thin limit: A case of rare-earth perovskite LaNiO3

We address the fundamental issue of growth of perovskite ultra-thin films under the condition of a strong polar mismatch at the heterointerface exemplified by the growth of a correlated metal LaNiO$_3$ on the band insulator SrTiO$_3$ along the pseudo cubic [111] direction. While in general the metallic LaNiO$_3$ film can effectively screen this polarity mismatch, we establish that in the ultra-thin limit, films are insulating in nature and require additional chemical and structural reconstruction to compensate for such mismatch. A combination of in-situ reflection high-energy electron diffraction recorded during the growth, X-ray diffraction, and synchrotron based resonant X-ray spectroscopy reveal the formation of a chemical phase La$_2$Ni$_2$O$_5$ (Ni$^{2+}$) for a few unit-cell thick films. First-principles layer-resolved calculations of the potential energy across the nominal LaNiO$_3$/SrTiO$_3$ interface confirm that the oxygen vacancies can efficiently reduce the electric field at the interface.

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preprint2013arXiv

Enhanced Spin and Electronic Reconstructions at the Cuprate-Manganite Interface

We report on a resonant soft X-ray spectroscopy study of the electronic and magnetic structure of the cuprate-manganite interface. Polarized X-ray spectroscopy measurements taken at the Cu L edge reveal up to a five-fold increase in the dichroic signal as compared to past experimental and theoretical values. Furthermore an increase in the degree of interlayer charge transfer up to 0.25e (where e is charge of an electron) per copper ion is observed leading to a profound reconstruction in the orbital scheme for these interfacial copper ions. It is inferred that these enhancement are related to an increase in TMI observed for manganite layers grown with rapidly modulated flux.

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preprint2013arXiv

Metallic Conductance at the Interface of Tri-color Titanate Superlattices

Ultra-thin tri-color (tri-layer) titanate superlattices ([3u.c. LaTiO3/2u.c. SrTiO3/3u.c. YTiO3], u.c. = unit cells) were grown in a layer-by-layer way on single crystal TbScO3 (110) substrates by pulsed laser deposition. High sample quality and electronic structure were characterized by the combination of in-situ photoelectron and ex-situ structure and surface morphology probes. Temperature-dependent sheet resistance indicates the presence of metallic interfaces in both [3u.c. LaTiO3/2u.c. SrTiO3] bi-layers and all the tri-color structures, whereas a [3u.c. YTiO3/2u.c. SrTiO3] bi-layer shows insulating behavior. Considering that in the bulk YTiO3 is ferromagnetic below 30 K, the tri-color titanate superlattices provide an opportunity to induce tunable spin- polarization into the two-dimensional electron gas (2DEG) with Mott carriers.

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preprint2013arXiv

Strain mediated suppression of the metal-insulator transition in EuNiO3 thin films

Ultrathin epitaxial films of EuNiO3 were grown on a series of substrates traversing highly compressive (- 2.4%) to highly tensile (2.5%) lattice mismatch. X-ray diffraction measurements showed the expected c-lattice parameter shift for compressive strain, but no detectable shift for tensilely strained substrates, while reciprocal space mapping confirmed the tensile strained film maintained epitaxial coherence. Transport measurements showed a successively (from tensile to compressive) lower resistance and a complete suppression of the metalinsulator transition at highly compressive lattice mismatch. Corroborating these findings, X-ray absorption spectroscopy measurements revealed a strong multiplet splitting in the tensile samples that progressively weakens with increasing compressive strain that, combined with cluster calculations, showed enhanced covalence between Ni-d and O-p orbitals leads to the metallic state.

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preprint2012arXiv

Field-effect diode based on electron-induced Mott transition in NdNiO3

We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to the bias polarity. The asymmetry is temperature-dependent and is most significant near the metal-insulator transition. The I-V characteristics exhibit a strong dependence both on the thermal history and the history of the applied voltage bias. Our two-terminal device represents a simple and efficient route for studies of the effect of electron doping on the metal-insulator transition.

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preprint2012arXiv

Metal-insulator transition and orbital reconstruction in Mott quantum wells of NdNiO$_{3}$

The metal-insulator transition (MIT) and the underlying electronic and orbital structure in $e_{g}^{1}$ quantum wells based on NdNiO$_{3}$ was investigated by d.c. transport and resonant soft x-ray absorption spectroscopy. By comparing quantum wells of the same dimension but with two different confinement structures, we explicitly demonstrate that the quantum well boundary condition of correlated electrons is critical to selecting the many-body ground state. In particular, the long-range orderings and the MIT are found to be strongly enhanced under quantum confinement by sandwiching NdNiO$_{3}$ with the wide-gap dielectric LaAlO$_{3}$, while they are suppressed when one of the interfaces is replaced by a surface (interface with vacuum). Resonant spectroscopy reveals that the reduced charge fluctuations in the sandwich structure are supported by the enhanced propensity to charge ordering due to the suppressed $e_g$ orbital splitting when interfaced with the confining LaAlO$_{3}$ layer.

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preprint2012arXiv

Orbital control in strained ultra-thin LaNiO$_3$/LaAlO$_3$ superlattices

In pursuit of rational control of orbital polarization, we present a combined experimental and theoretical study of single unit cell superlattices of the correlated metal LaNiO$_3$ and the band insulator LaAlO$_3$. Polarized x-ray absorption spectra show a distinct asymmetry in the orbital response under strain. A splitting of orbital energies consistent with octahedral distortions is found for the case of compressive strain. In sharp contrast, for tensile strain, no splitting is found although a strong orbital polarization is present. Density functional theory calculations including a Hubbard U term reveal that this asymmetry is a result of the interplay of strain and confinement induces octahedral rotations and distortions and altered covalency in the bonding across the interfacial Ni-O-Al apical oxygen, leading to a charge disporportionation at the Ni sites for tensile strain.

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preprint2012arXiv

Strain-controlled band engineering and self-doping in ultrathin LaNiO$_3$ films

We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultra-thin metallic LaNiO$_3$ films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As the film strain varies from compressive to tensile at fixed composition and stoichiometry, the transport coefficients evolve in a manner strikingly similar to those of bulk hole-doped superconducting cuprates with varying doping level. Density functional calculations reveal that the strain-induced changes in the transport properties are due to self-doping in the low-energy electronic band structure. The results imply that thin-film epitaxy can serve as a new means to achieve hole-doping in other (negative) charge-transfer gap transition metal oxides without resorting to chemical substitution.

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preprint2011arXiv

Asymmetric orbital-lattice interactions in ultra-thin correlated oxide films

Using resonant X-ray spectroscopies combined with density functional calculations, we find an asymmetric bi-axial strain-induced $d$-orbital response in ultra-thin films of the correlated metal LaNiO$_3$ which are not accessible in the bulk. The sign of the misfit strain governs the stability of an octahedral "breathing" distortion, which, in turn, produces an emergent charge-ordered ground state with an altered ligand-hole density and bond covalency. Control of this new mechanism opens a pathway to rational orbital engineering, providing a platform for artificially designed Mott materials.

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preprint2011arXiv

Epitaxial Stabilization of Ultrathin Films of Rare-Earth Nickelates

We report on the synthesis of ultrathin films of highly distorted EuNiO3 (ENO) grown by interrupted pulse laser epitaxy on YAlO3 (YAO) substrates. Through mapping the phase space of nickelate thin film epitaxy, the optimal growth temperatures were found to scale linearly with the Goldschmidt tolerance factor. Considering the gibbs energy of the expanding film, this empirical trend is discussed in terms of epitaxial stabilization and the escalation of the lattice energy due to lattice distortions and decreasing symmetry. These findings are fundamental to other complex oxide perovskites, and provide a route to the synthesis of other perovskite structures in ultrathin-film form.

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preprint2011arXiv

Quantum confinement of Mott electrons in ultrathin LaNiO3/LaAlO3 superlattice

We investigate the electronic reconstruction in (LaNiO$_{3}$)$_n$/(LaAlO$_{3}$)$_3$ (n=3, 5 and 10) superlattices due to the quantum confinement (QC) by d.c. transport and resonant soft x-ray absorption spectroscopy. In proximity to the QC limit, a Mott-type transition from an itinerant electron behavior to a localized state is observed. The system exhibits tendency towards charge-order during the transition. ab initio cluster calculations are in good agreement with the absorption spectra, indicating that the apical ligand hole density is highly suppressed resulting in a strong modification of the electronic structure. At the dimensional crossover cellular dynamical-mean-field calculations support the emergence of a Mott insulator ground state in the heterostructured ultra-thin slab of LaNiO$_{3}$.

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preprint2011arXiv

Strain dependent transport properties of the quasi two-dimensional correlated metal, LaNiO$_{3}$

We explore the electrical transport and magneto-conductance in quasi two-dimensional strongly correlated ultrathin films of LaNiO$_{3}$ (LNO) to investigate the effect of hetero-epitaxial strain on electron-electron and electron-lattice interactions from the low to intermediate temperature range (2K$\sim$170K). The fully epitaxial 10 unit cell thick films spanning tensile strain up to $\sim4%$ are used to investigate effects of enhanced carrier localization driven by a combination of weak localization and electron-electron interactions at low temperatures. The magneto-conductance data shows the importance of the increased contribution of weak localization to low temperature quantum corrections. The obtained results demonstrate that with increasing tensile strain and reduced temperature the quantum confined LNO system gradually evolves from the Mott into the Mott-Anderson regime.

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preprint2010arXiv

Effect of polar discontinuity on the growth of LaNiO3/LaAlO3 superlattices

We have conducted a detailed microscopic investigation of [LaNiO3(1 u.c.)/LaAlO3(1 u.c.)]N superlattices grown on (001) SrTiO3 and LaAlO3 to explore the influence of polar mismatch on the resulting electronic and structural properties. Our data demonstrate that the initial growth on the non-polar SrTiO3 surface leads to a rough morphology and unusual 2+ valence of Ni in the first LaNiO3 layer, which is not observed after growth on the polar surface of LaAlO3. A newly devised model suggests that the polar mismatch can be resolved if the perovskite layers grow with an excess of LaO, which also accounts for the observed electronic, chemical, and structural effects.

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preprint2010arXiv

Strain-mediated metal-insulator transition in epitaxial ultra-thin films of NdNiO3

We have synthesized epitaxial NdNiO$_{3}$ ultra-thin films in a layer-by-layer growth mode under tensile and compressive strain on SrTiO$_{3}$ (001) and LaAlO$_3$ (001), respectively. A combination of X-ray diffraction, temperature dependent resistivity, and soft X-ray absorption spectroscopy has been applied to elucidate electronic and structural properties of the samples. In contrast to the bulk NdNiO$_{3}$, the metal-insulator transition under compressive strain is found to be completely quenched, while the transition remains under the tensile strain albeit modified from the bulk behavior.

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preprint2010arXiv

Sub-monolayer nucleation and growth of complex oxide heterostructures at high supersaturation and rapid flux modulation

We report on the non-trivial nanoscale kinetics of the deposition of novel complex oxide heterostructures composed of a unit-cell thick correlated metal LaNiO3 and dielectric LaAlO3. The multilayers demonstrate exceptionally good crystallinity and surface morphology maintained over the large number of layers, as confirmed by AFM, RHEED, and synchrotron X-ray diffraction. To elucidate the physics behind the growth, the temperature of the substrate and the deposition rate were varied over a wide range and the results were treated in the framework of a two-layer model. These results are of fundamental importance for synthesis of new phases of complex oxide heterostructures.

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