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P. Lutz

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6 publications

preprint2013arXiv

A light readout system for gas TPCs

A novel light detection scheme has been tested for use in medium-pressure gas TPCs, in view of rare events searches in low energy particle physics. It has the advantage of minimal interference with the ionization collection system, used for track imaging. It provides an absolute time reference, which allows an absolute determination of the Z coordinate of events, along the direction of the drift field. This makes possible a fiducial cut along the Z-axis, allowing to reduce the background from the ends of the drift volume.

preprint2013arXiv

The importance of Charge Fluctuations for the Topological Phase in SmB6_6

The discovery of topologically non-trivial states in band insulators has induced an extensive search for topological phase in strongly correlated electron systems. In particular, samarium hexaboride (SmB6_6) has drawn much attention as it might represent a new class of condensed matter called topological Kondo insulator. Kondo insulators (KI) can have non-trivial Z2_2 topology because the energy gap opens at the Fermi energy (EFE_F) by hybridization between an odd- parity renormalized ff band and an even- parity conduction dd band. However, the characteristics of SmB6_6 deviate from the conventional KI because its gap is insensitive to doping and pressure. Thus, it is unclear what makes the gap of SmB6_6 different from that of KI, and how the band inversion features occur. In this manuscript, we demonstrate the importance of charge fluctuations in SmB6_6. Our angle-resolved photoemission spectroscopy (ARPES) results reveal that with decreasing temperature the bottom of the dd-ff hybridized band at the Xˉ\bar{\text{X}} point gradually shifts from below to above EFE_F. This shift accompanies a redistribution of spectral weight from the upper to the lower quasiparticle band, and reflects the change in both carrier density and the number of localized ff electron. Moreover, because this hybridized band is predicted to have odd parity and to induce a non-trivial Z2Z_{2} topology, we compare our ARPES spectra with theoretical surface band structures and find signatures of topological surface states. Therefore, our results indicate that SmB6_6 is a charge fluctuating topological insulator having the odd-parity hybridized band above EFE_F at the XX point. This demonstrates that the charge fluctuations do not only drive the insulating bulk phase but also the non-trivial topological phase.

preprint2012arXiv

Infrastructure for Detector Research and Development towards the International Linear Collider

The EUDET-project was launched to create an infrastructure for developing and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry.

preprint2012arXiv

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field.

preprint2011arXiv

Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs

A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents.

preprint2011arXiv

Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures

We report on the observation of linear and circular magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures. We show that intraband (Drude-like) absorption of terahertz radiation in the heterostructures causes a dc electric current in the presence of an in-plane magnetic field. The photocurrent behavior upon variation of the magnetic field strength, temperature and wavelength is studied. We show that at moderate magnetic fields the photocurrent exhibits a typical linear field dependence. At high magnetic fields, however, it becomes nonlinear and inverses its sign. The experimental results are analyzed in terms of the microscopic models based on asymmetric relaxation of carriers in the momentum space. We demonstrate that the observed nonlinearity of the photocurrent is caused by the large Zeeman spin splitting in InSb/AlInSb structures and an interplay of the spin-related and spin-independent roots of the magnetogyrotropic photogalvanic effect.

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