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Researcher profile

P. Levy

P. Levy contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phcond-mat.otherphysics.ins-detphysics.space-ph

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Published work

8 published item(s)

preprint2021arXiv

Proton irradiation effects on metal-YBCO interfaces

10 MeV proton-irradiation effects on a YBCO-based test structure were analyzed by measuring its current-voltage (IV) characteristics for different cumulated fluences. For fluences of up to $\sim$80$\cdot$10$^9$~p/cm$^2$ no changes in the electrical behavior of the device were observed, while for a fluence of $\sim$~300$\cdot$10$^9~$ p/cm$^2$ it becomes less conducting. A detailed analysis of the room temperature IV characteristics based on the $γ$ power exponent parameter [$γ=dLn(I)/dLn(V)$] allowed us to reveal the main conduction mechanisms as well as to establish the equivalent circuit model of the device. The changes produced in the electrical behavior, in accordance with Monte Carlo TRIM simulations, suggest that the main effect induced by protons is the displacement of oxygen atoms within the YBCO lattice, particularly from oxygen-rich to oxygen-poor areas, where they become trapped.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

LabOSat as a versatile payload for small satellites: first 100days in LEO orbit

In this work the first results obtained by LabOSat-01 platform are presented. This platform was designed for testing custom devices on board of small satellites. Two LabOSat-01 type boards were launched and placed into Low Earth Orbit (LEO) on May 30, 2016. We present here an analysis of data collected by one of these boards during the first days of mission. Total Ionization Dose results are compared with data acquired by LabOSat-01`s predecessor board, MeMOSat-01, launched in 2014.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

YBCO-based non-volatile ReRAM tested in Low Earth Orbit

An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth Orbit (LEO) using standard electronics and also with the dedicated LabOSat-01 controller. Similar results were obtained in both cases. After about 200 days at LEO on board a small satellite, electrical tests started on the memory device using the LabOSat-01 controller. We discuss the results of the first 150 tests, performed along a 433-day time interval in space. The memory device remained operational despite the hostile conditions that involved launching, lift-off vibrations, permanent thermal cycling and exposure to ionizing radiation, with doses 3 orders of magnitude greater than the usual ones on Earth. The device showed resistive switching and IV characteristics similar to those measured on Earth, although with changes that follow a smooth drift in time. A detailed study of the electrical transport mechanisms, based on previous models that indicate the existence of various conducting mechanisms through the metal-YBCO interface showed that the observed drift can be associated with a local temperature drift at the LabOSat controller, with no clear evidence that allows determining changes in the underlying microscopic factors. These results show the reliability of complex-oxide non-volatile ReRAM-based devices in order to operate under all the hostile conditions encountered in space-borne applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Correlation between electrical and magnetic properties of phase separated manganites studied with a General Effective Medium model

We have performed electrical resistivity and DC magnetization measurements as a function of temperature, on polycrystalline samples of phase separated LaPrCaMnO. We have used the General Effective Medium Theory to obtain theoretical resistivity vs. temperature curves corresponding to different fixed ferromagnetic volume fraction values, assuming that the sample is a mixture of typical metallic like and insulating manganites. By comparing this data with our experimental resistivity curves we have obtained the relative ferromagnetic volume fraction of our sample as a function of temperature. This result matches with the corresponding magnetization data in excellent agreement, showing that a mixed phase scenario is the key element to explain both the magnetic and transport properties in the present compound.

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preprint2013arXiv

Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Hysteresis Switching Loops in Ag-manganite memristive interfaces

Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through Hysteresis Switching Loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Mechanism for bipolar resistive switching in transition metal oxides

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Low temperature irreversibility induced by thermal cycles on two prototypical phase separated manganites

We have studied the effect of irreversibility induced by repeated thermal cycles on the electric transport and magnetization of polycrystalline samples of La0.5Ca0.5MnO3 and La0.325Pr0.3Ca0.375MnO3. An increase of the resistivity and a decrease of the magnetization at different temperature ranges after cycling is obtained in the temperature range between 300 K and 30 K. Both compounds are known to exhibit intrinsic submicrometric coexistence of phases and undergo a sequence of phase transitions related to structural changes. Changes induced by thermal cycling can be partially inhibited by applying magnetic field and hydrostatic pressure. Our results suggest that the growth and coexistence of phases with different structures gives rise to microstructural tracks and strain accommodation, producing the observed irreversibility. Irrespective of the actual ground state of each compound, the effect of thermal cycling is towards an increase of the amount of the insulating phase in both compounds.

0 citations0 reviewsNo code linkedOpen access