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P. Levy

P. Levy appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elphysics.app-phcond-mat.otherphysics.ins-detphysics.space-ph

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Published work

15 published item(s)

preprint2021arXiv

Proton irradiation effects on metal-YBCO interfaces

10 MeV proton-irradiation effects on a YBCO-based test structure were analyzed by measuring its current-voltage (IV) characteristics for different cumulated fluences. For fluences of up to $\sim$80$\cdot$10$^9$~p/cm$^2$ no changes in the electrical behavior of the device were observed, while for a fluence of $\sim$~300$\cdot$10$^9~$ p/cm$^2$ it becomes less conducting. A detailed analysis of the room temperature IV characteristics based on the $γ$ power exponent parameter [$γ=dLn(I)/dLn(V)$] allowed us to reveal the main conduction mechanisms as well as to establish the equivalent circuit model of the device. The changes produced in the electrical behavior, in accordance with Monte Carlo TRIM simulations, suggest that the main effect induced by protons is the displacement of oxygen atoms within the YBCO lattice, particularly from oxygen-rich to oxygen-poor areas, where they become trapped.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

LabOSat as a versatile payload for small satellites: first 100days in LEO orbit

In this work the first results obtained by LabOSat-01 platform are presented. This platform was designed for testing custom devices on board of small satellites. Two LabOSat-01 type boards were launched and placed into Low Earth Orbit (LEO) on May 30, 2016. We present here an analysis of data collected by one of these boards during the first days of mission. Total Ionization Dose results are compared with data acquired by LabOSat-01`s predecessor board, MeMOSat-01, launched in 2014.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

YBCO-based non-volatile ReRAM tested in Low Earth Orbit

An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth Orbit (LEO) using standard electronics and also with the dedicated LabOSat-01 controller. Similar results were obtained in both cases. After about 200 days at LEO on board a small satellite, electrical tests started on the memory device using the LabOSat-01 controller. We discuss the results of the first 150 tests, performed along a 433-day time interval in space. The memory device remained operational despite the hostile conditions that involved launching, lift-off vibrations, permanent thermal cycling and exposure to ionizing radiation, with doses 3 orders of magnitude greater than the usual ones on Earth. The device showed resistive switching and IV characteristics similar to those measured on Earth, although with changes that follow a smooth drift in time. A detailed study of the electrical transport mechanisms, based on previous models that indicate the existence of various conducting mechanisms through the metal-YBCO interface showed that the observed drift can be associated with a local temperature drift at the LabOSat controller, with no clear evidence that allows determining changes in the underlying microscopic factors. These results show the reliability of complex-oxide non-volatile ReRAM-based devices in order to operate under all the hostile conditions encountered in space-borne applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Manganite-based three level memristive devices with self-healing capability

We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an intermediate resistance state. We observe three discrete resistance levels (low, intermediate and high), which can be set either by the application of current-voltage ramps or by means of single pulses. These states exhibit retention and endurance capabilities exceeding $10^4$ s and 70 cycles, respectively. We rationalize our experimental observations by proposing a mixed scenario were a metallic filament and a Si$O_x$ layer coexist, accounting for the observed resistive switching. Overall electrode area dependence and temperature dependent resistance measurements support our scenario. After device failure takes place, the system can be turned functional again by heating up to low temperature (120 C), a feature that could be exploited for the design of memristive devices with self-healing functionality. These results give insight into the existence of multiple resistive switching mechanisms in manganite-based memristive systems and provide strategies for controlling them.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Correlation between electrical and magnetic properties of phase separated manganites studied with a General Effective Medium model

We have performed electrical resistivity and DC magnetization measurements as a function of temperature, on polycrystalline samples of phase separated LaPrCaMnO. We have used the General Effective Medium Theory to obtain theoretical resistivity vs. temperature curves corresponding to different fixed ferromagnetic volume fraction values, assuming that the sample is a mixture of typical metallic like and insulating manganites. By comparing this data with our experimental resistivity curves we have obtained the relative ferromagnetic volume fraction of our sample as a function of temperature. This result matches with the corresponding magnetization data in excellent agreement, showing that a mixed phase scenario is the key element to explain both the magnetic and transport properties in the present compound.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Asymmetric pulsing for reliable operation of titanium/manganite memristors

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than $10^{5}$ switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Hysteresis Switching Loops in Ag-manganite memristive interfaces

Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through Hysteresis Switching Loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Mechanism for bipolar resistive switching in transition metal oxides

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

The electrical current effect in phase separated La5/8-yPryCa3/8MnO3: Charge order melting vs. Joule heating

We have studied the effect of electric field on transport properties of the prototypical phase separated manganite La5/8-yPryCa3/8MnO3 with y=0.34. Our results show that the suggested image in which the charge ordered state is melted by the appliance of an electric current and/or voltage has to be revised. We were able to explain the observed resistivity drop in terms of an artifact related to Joule heating and the particular hysteresis that the system under study display, common to many other phase separated manganites.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Low temperature irreversibility induced by thermal cycles on two prototypical phase separated manganites

We have studied the effect of irreversibility induced by repeated thermal cycles on the electric transport and magnetization of polycrystalline samples of La0.5Ca0.5MnO3 and La0.325Pr0.3Ca0.375MnO3. An increase of the resistivity and a decrease of the magnetization at different temperature ranges after cycling is obtained in the temperature range between 300 K and 30 K. Both compounds are known to exhibit intrinsic submicrometric coexistence of phases and undergo a sequence of phase transitions related to structural changes. Changes induced by thermal cycling can be partially inhibited by applying magnetic field and hydrostatic pressure. Our results suggest that the growth and coexistence of phases with different structures gives rise to microstructural tracks and strain accommodation, producing the observed irreversibility. Irrespective of the actual ground state of each compound, the effect of thermal cycling is towards an increase of the amount of the insulating phase in both compounds.

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preprint2002arXiv

Non-volatile magnetoresistive memory in phase separated La$_{0.325}$Pr$_{0.300}$Ca$_{0.375}$MnO$_3$

We have measured magnetic and transport response on the polycrystalline La$_{5/8-y}$Pr$_y$Ca$_{3/8}$MnO$_3$ ($y=0.30$, average grain size 2 microns) compound. In the temperature range where ferromagnetic metallic and insulating regions coexist we observed a persistent memory of low magnetic fields ($<$ 1 T) which is determined by the actual amount of the ferromagnetic phase. The possibility to manipulate this fraction with relatively small external perturbations is related to the phase separated nature of these manganese oxide based compounds. The colossal magnetoresistance figures obtained (about 80%) are determined by the fraction enlargement mechanism. Self-shielding of the memory to external fields is found under certain described circumstances. We show that this non-volatile memory has multilevel capability associated with different applied low magnetic field values.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

Novel dynamical effects and persistent memory in phase separated manganites

The time dependent response of the magnetic and transport properties of Fe-doped phase separated (PS) manganite La$_{0.5}$Ca$_{0.5}$MnO$_{3}$ is reported. The nontrivial coexistence of ferromagnetic (FM) and non FM regions induces a slow dynamics which leads to time relaxation and cooling rate dependence within the PS regime. This dynamics influences drastically on physical properties. On one hand, metallic like behavior, assumed to be a fingerprint of percolation, can be also observed before the FM phase percolates as a result of dynamical contributions. On the other one, two novel effects for the manganites are reported, namely the rejuvenation of the resistivity after ageing, and a persistent memory of low magnetic fields ($<$ 1 T), imprinted in the amount of the FM phase. As a distinctive fact, this memory can be recovered through transport measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2001arXiv

Magnetization studies of phase separation in La$_{0.5}$Ca$_{0.5}$MnO$_{3}$

We present magnetization studies in a series of phase separated La$_{0.5}$Ca$%_{0.5}$MnO$_{3}$ samples, with different low temperature fractions of the ferromagnetic (FM) and charge ordered-antiferromagnetic (CO-AFM) phases. A particular experimental procedure probes the effect of the magnetic field applied while cooling the samples, which promotes FM fraction enlargement and enhances the melting of the CO phase. The response of the system depending on its magnetic field history indicates the existence of three different regimes in the phase separated state which develops below T$_{C}$. Our data allows us to identify the onset temperature below which the system becomes magnetic and structurally phase separated, and an onset field above which FM fraction enlargement occurs.

0 citations0 reviewsNo code linkedOpen access
preprint2000arXiv

Effects of Fe doping in La1/2Ca1/2MnO3

The effect of Fe doping in the Mn site on the magnetic, transport and structural properties of polycrystalline La1/2Ca1/2MnO3 was studied. Doping with low Fe concentration (< 10%) strongly affects electrical transport and magnetization. Long range charge order is disrupted even for the lowest doping level studied (~2%). For Fe concentration up to 5% a ferromagnetic state develops at low temperature with metallic like conduction and thermal hysteresis. In this range, the Curie temperature decreases monotonously as a function of Fe doping. Insulating behavior and a sudden depression of the ferromagnetic state is observed by further Fe doping.

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