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C. Acha

C. Acha contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-phcond-mat.str-elcond-mat.mes-hallcond-mat.othercond-mat.supr-con

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Published work

11 published item(s)

preprint2021arXiv

Proton irradiation effects on metal-YBCO interfaces

10 MeV proton-irradiation effects on a YBCO-based test structure were analyzed by measuring its current-voltage (IV) characteristics for different cumulated fluences. For fluences of up to $\sim$80$\cdot$10$^9$~p/cm$^2$ no changes in the electrical behavior of the device were observed, while for a fluence of $\sim$~300$\cdot$10$^9~$ p/cm$^2$ it becomes less conducting. A detailed analysis of the room temperature IV characteristics based on the $γ$ power exponent parameter [$γ=dLn(I)/dLn(V)$] allowed us to reveal the main conduction mechanisms as well as to establish the equivalent circuit model of the device. The changes produced in the electrical behavior, in accordance with Monte Carlo TRIM simulations, suggest that the main effect induced by protons is the displacement of oxygen atoms within the YBCO lattice, particularly from oxygen-rich to oxygen-poor areas, where they become trapped.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrical conduction mechanisms of metal / high-Tc superconductor (YBCO) interfaces

Current-voltage characteristics of Au~/~YBa$_2$Cu$_3$O$_{7-δ}$ interfaces (Au/YBCO), built on optimally-doped YBCO thin films, grown by pulsed laser deposition, were measured as a function of temperature in the 50 K to 270 K range, for two different resistance states. A non-trivial equivalent circuit model is proposed, which reveals the existence of a highly inhomogeneous scenario composed by two complex layers: one presenting both a non-linear Poole-Frenkel conduction as well as Variable Range Hopping localization effects (probably associated with YBa$_2$Cu$_3$O$_{6}$) mixed with a minor metallic phase, while the other is also composed by a mixture of YBCO with different oxygen contents, where a metallic ohmic phase still percolates. A microscopic description of the effects produced by the resistance switching is given, showing the evolution of carrier traps, localization effects and dielectric behavior for each state. The dielectric behavior is interpreted in terms of a Maxwell-Wagner scenario.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

YBCO-based non-volatile ReRAM tested in Low Earth Orbit

An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth Orbit (LEO) using standard electronics and also with the dedicated LabOSat-01 controller. Similar results were obtained in both cases. After about 200 days at LEO on board a small satellite, electrical tests started on the memory device using the LabOSat-01 controller. We discuss the results of the first 150 tests, performed along a 433-day time interval in space. The memory device remained operational despite the hostile conditions that involved launching, lift-off vibrations, permanent thermal cycling and exposure to ionizing radiation, with doses 3 orders of magnitude greater than the usual ones on Earth. The device showed resistive switching and IV characteristics similar to those measured on Earth, although with changes that follow a smooth drift in time. A detailed study of the electrical transport mechanisms, based on previous models that indicate the existence of various conducting mechanisms through the metal-YBCO interface showed that the observed drift can be associated with a local temperature drift at the LabOSat controller, with no clear evidence that allows determining changes in the underlying microscopic factors. These results show the reliability of complex-oxide non-volatile ReRAM-based devices in order to operate under all the hostile conditions encountered in space-borne applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Electric selective activation of memristive interfaces in TaO$_x$-based devices

The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta$_2$O$_5$-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling the (a)symmetry of the applied stimuli and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different zones of the active Ta$_2$O$_{5-x}$ layer: a central -- bulk -- one and two quasi-symmetric interfaces with reduced TaO$_{2-h(y)}$ layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide -- Ta-oxide -- and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple -- analogic -- intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electrical transport properties of manganite powders under pressure

We have measured the electrical resistance of micrometric to nanometric powders of the La$_{5/8-y}$Pr$_y$Ca$_{3/8}$MnO$_3$ (LPCMO with y=0.3) manganite for hydrostatic pressures up to 4 kbar. By applying different final thermal treatments to samples synthesized by a microwave assisted denitration process, we obtained two particular grain characteristic dimensions (40 nm and 1000 nm) which allowed us to analyze the grain size sensitivity of the electrical conduction properties of both the metal electrode interface with manganite (Pt / LPCMO) as well as the intrinsic intergranular interfaces formed by the LPCMO powder, conglomerate under the only effect of external pressure. We also analyzed the effects of pressure on the phase diagram of these powders. Our results indicate that different magnetic phases coexist at low temperatures and that the electrical transport properties are related to the intrinsic interfaces, as we observe evidences of a granular behavior and an electronic transport dominated by the Space Charge limited Current mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces

In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal / YBa2Cu3O7-d (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance with the predictions of a recent model.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Mechanism for bipolar resistive switching in transition metal oxides

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

A phenomenological model for the pressure sensitivity of the Curie temperature in hole-doped manganites

We performed high pressure experiments on La(0.8)Ca(0.2-x)Sr(x)MnO(3) (LCSMO) (0<x< 0.2) ceramic samples in order to analyze the validity of the well known relation between the A mean ionic radius (<rA>) and the Curie temperature Tc of hole-doped manganites at a fixed doping level and for doping values below the 0.3 (Mn+4/Mn+3) ratio. By considering our results and collecting others from the literature, we were able to propose a phenomenological law that considers the systematic dependence of Tc with structural and electronic parameters. This law predicts fairly well the pressure sensitivity of Tc, its dependence with the A-cation radius disorder and its evolution in the high pressure range. Considering a Double Exchange model, modified by polaronic effects, the phenomenological law obtained for Tc can be associated with the product of two terms: the polaronic modified bandwidth and an effective hole doping.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Low temperature irreversibility induced by thermal cycles on two prototypical phase separated manganites

We have studied the effect of irreversibility induced by repeated thermal cycles on the electric transport and magnetization of polycrystalline samples of La0.5Ca0.5MnO3 and La0.325Pr0.3Ca0.375MnO3. An increase of the resistivity and a decrease of the magnetization at different temperature ranges after cycling is obtained in the temperature range between 300 K and 30 K. Both compounds are known to exhibit intrinsic submicrometric coexistence of phases and undergo a sequence of phase transitions related to structural changes. Changes induced by thermal cycling can be partially inhibited by applying magnetic field and hydrostatic pressure. Our results suggest that the growth and coexistence of phases with different structures gives rise to microstructural tracks and strain accommodation, producing the observed irreversibility. Irrespective of the actual ground state of each compound, the effect of thermal cycling is towards an increase of the amount of the insulating phase in both compounds.

0 citations0 reviewsNo code linkedOpen access
preprint1997arXiv

Study of the Phase Diagram and the Tc Pressure Dependence for HgBaCuO Superconductors

We apply a method recently derived based on the extended Hubbard Hamiltonian and the BCS approach to obtain the superconducting critical temperature dependence with carrier density for the HgBaCuO compounds. We show that this procedure can be used to study pressure effect with the assumption that pressure changes the supercondutor gap. The results reproduce well the experimental data for the whole doping regime and the high and low pressure dependence.

0 citations0 reviewsNo code linkedOpen access