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Source author record

O. V. Astafiev

O. V. Astafiev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.supr-concond-mat.mtrl-scicond-mat.mes-hallphysics.opticsquant-phcond-mat.otherphysics.app-phphysics.atom-ph

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Published work

24 published item(s)

preprint2026arXiv

Aharonov-Casher Effect and the Coherent Flux Tunneling in the Hybrid Charge Quantum Interference Device

By exploiting the Aharonov-Casher effect we demonstrate a suppression of magnetic flux tunneling in a Hybrid Charge Quantum Interference Device. The main part of this device is two Josephson junctions with a small superconducting island between them. To minimize phase fluctuations across Josephson junctions, this structure is embedded in a compact super-inductive NbN loop. The Interference between the flux tunneling paths is determined by the island-induced charge, which is controlled by an external voltage. The charge sensitive operation of the device is subjected to poisoning by the quasiparticles generated in the NbN film.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantized current steps due to the a.c. coherent quantum phase-slip effect

The AC Josephson effect predicted in 1962 and observed experimentally in 1963 as quantised voltage steps (the Shapiro steps) from photon assisted tunnelling of Cooper pairs is among the most fundamental phenomena of quantum mechanics and is vital for metrological quantum voltage standards. The physically dual effect, the AC coherent quantum phase slip (CQPS), photon assisted tunnelling of magnetic fluxes through a superconducting nanowire, is envisaged to reveal itself as quantised current steps. The basic physical significance of the AC CQPS is also complemented by practical importance in future current standards; a missing element for closing the Quantum Metrology Triangle. In 2012, the CQPS was demonstrated as superposition of magnetic flux quanta in superconducting nanowires. However the direct sharp current steps in superconductors; the only unavailable basic effect of superconductivity to date, was unattainable due to lack of appropriate materials and challenges in circuit engineering. Here we report the direct observation of the dual Shapiro steps in a superconducting nanowire. The sharp steps are clear up to 26 GHz frequency with current values 8.3 nA and limited by the present setup bandwidth. The current steps have been theoretically predicted in small Josephson junctions (JJs) 30 years ago. However, broadening unavoidable in JJs prevents their direct experimental observation. We solve this problem by placing a thin NbN nanowire in an inductive environment.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Light-dressing of a diatomic superconducting artificial molecule

In this work, we irradiate a superconducting artificial molecule composed of two coupled tunable transmons with microwave light while monitoring its state via joint dispersive readout. Performing high-power spectroscopy, we observe and identify a variety of single- and multiphoton transitions. We also find that at certain fluxes, the measured spectrum of the system deviates significantly from the solution of the stationary Schrödinger equation with no driving. We reproduce these unusual spectral features by solving numerically the full master equation for a steady-state and attribute them to an Autler-Townes-like effect in which a single tone is simultaneously dressing the system and probing the transitions between new eigenstates. We show that it is possible to find analytically the exact frequencies at which the satellite spectral lines appear by solving self-consistent equations in the rotating frame. Our approach agrees well with both the experiment and the numerical simulation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Single-atom maser with engineered circuit for population inversion

We present a blueprint for a maser with a single three-level transmon superconducting artificial atom. The system can be pumped coherently via a two-photon process, and to achieve high population inversion, the relaxation rate of the metastable state is increased via an auxiliary low-Q cavity coupled to a transition between the transmon excited states. We show numerically that such a maser can operate both in the intermediate coupling regime with super-Poissonian photon statistics and in the strong coupling regime, where the statistics is sub-Poissonian. For the former, the maser exhibits thresholdless behavior and for the latter, there is a well-defined pumping threshold. A useful side-effect of the auxiliary resonator is that it allows to overcome the photon blockade effect for the pump, which would otherwise prevent high photon population. Finally, we observe the bistability of the steady-state Wigner function and the self-quenching effect for some parameters.

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preprint2020arXiv

Two-level system as a quantum sensor of absolute power

A two-level quantum system can absorb or emit not more than one photon at a time. Using this fundamental property, we demonstrate how a superconducting quantum system strongly coupled to a transmission line can be used as a sensor of the photon flux. We propose four methods of sensing the photon flux and analyse them for the absolute calibration of power by measuring spectra of scattered radiation from the two-level system. This type of sensor can be tuned to operate in a wide frequency range, and does not disturb the propagating waves when not in use. Using a two-level system as a power sensor enables a range of applications in quantum technologies, here in particular applied to calibrate the attenuation of transmission lines inside dilution refrigerators.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Tunable Microwave Single-photon Source Based on Transmon Qubit with High Efficiency

Single-photon sources are of great interest because they are key elements in different promising applications of quantum technologies. Here we demonstrate a highly efficient tunable on-demand microwave single-photon source based on a transmon qubit with the intrinsic emission efficiency above 98$\%$. The high efficiency ensures a negligible pure dephasing rate and the necessary condition for generation of indistinguishable photons. We provide an extended discussion and analysis of the efficiency of the photon generation. To further experimentally confirm the single-photon property of the source, correlation functions of the emission field are also measured using linear detectors with a GPU-enhanced signal processing technique. Our results experimentally demonstrate that frequency tunability and negligible pure dephasing rate can be achieved simultaneously and show that such a tunable single-photon source can be good for various practical applications in quantum communication, simulations and information processing in the microwave regime.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Coherent dynamics and decoherence in a superconducting weak link

We demonstrate coherent dynamics of quantized magnetic fluxes in a superconducting loop with a weak link - a nanobridge patterned from the same thin NbN film as the loop. The bridge is a short rounded shape constriction, close to 10 nm long and 20 - 30 nm wide, having minimal width at its center. Quantum state control and coherent oscillations in the driven time evolution of the tunnel-junctionless system are achieved. Decoherence and energy relaxation in the system are studied using a combination of microwave spectroscopy and direct time-domain techniques. The effective flux noise behavior suggests inductance fluctuations as a possible cause of the decoherence.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tuneable on-demand single-photon source

An on-demand single photon source is a key element in a series of prospective quantum technologies and applications. We demonstrate the operation of a tuneable on-demand microwave photon source based on a fully controllable superconducting artificial atom strongly coupled to an open-end transmission line (a 1D half-space). The atom emits a photon upon excitation by a short microwave $π$-pulse applied through a control line weakly coupled to the atom. The emission and control lines are well decoupled from each other, preventing the direct leakage of radiation from the $π$-pulses used for excitation. The estimated efficiency of the source is higher than 75\% and remains to be about 50\% or higher over a wide frequency range from 6.7 to 9.1 GHz continuously tuned by an external magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coherent Flux Tunneling Through NbN Nanowires

We demonstrate evidence of coherent magnetic flux tunneling through superconducting nanowires patterned in a thin highly disordered NbN film. The phenomenon is revealed as a superposition of flux states in a fully metallic superconducting loop with the nanowire acting as an effective tunnel barrier for the magnetic flux, and reproducibly observed in different wires. The flux superposition achieved in the fully metallic NbN rings proves the universality of the phenomenon previously reported for InOx. We perform microwave spectroscopy and study the tunneling amplitude as a function of the wire width, compare the experimental results with theories, and estimate the parameters for existing theoretical models.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Coherent quantum phase slip

A hundred years after discovery of superconductivity, one fundamental prediction of the theory, the coherent quantum phase slip (CQPS), has not been observed. CQPS is a phenomenon exactly dual to the Josephson effect: whilst the latter is a coherent transfer of charges between superconducting contacts, the former is a coherent transfer of vortices or fluxes across a superconducting wire. In contrast to previously reported observations of incoherent phase slip, the CQPS has been only a subject of theoretical study. Its experimental demonstration is made difficult by quasiparticle dissipation due to gapless excitations in nanowires or in vortex cores. This difficulty might be overcome by using certain strongly disordered superconductors in the vicinity of the superconductor-insulator transition (SIT). Here we report the first direct observation of the CQPS in a strongly disordered indium-oxide (InOx) superconducting wire inserted in a loop, which is manifested by the superposition of the quantum states with different number of fluxes. Similarly to the Josephson effect, our observation is expected to lead to novel applications in superconducting electronics and quantum metrology.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Dressed-state amplification by a superconducting qubit

We demonstrate amplification of a microwave signal by a strongly driven two-level system in a coplanar waveguide resonator. The effect known from optics as dressed-state lasing is observed with a single quantum system formed by a persistent current (flux) qubit. The transmission through the resonator is enhanced when the Rabi frequency of the driven qubit is tuned into resonance with one of the resonator modes. Amplification as well as linewidth narrowing of a weak probe signal has been observed. The laser emission at the resonator's fundamental mode has been studied by measuring the emission spectrum. We analyzed our system and found an excellent agreement between the experimental results and the theoretical predictions obtained in the dressed-state model.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Application of elastic mid-IR light scattering for inspection of internal gettering operations

Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of the internal gettering efficiency and stability have been practically absent thus far. The purpose of this paper is to present such a method developed on the basis of law-angle mid-IR-light scattering technique (LALS), which has been successfully applied thus far for the investigation of large-scale electrically active defect accumulations (LSDAs) in semiconductor crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Application of elastic mid-IR-laser-light scattering for non-destructive inspection in microelectronics

Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper. The conclusion is made that the techniques in question might be very useful for solving a large number of problems regarding defect investigations and quality monitoring both in research laboratories and the industry of microelectronics

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Coherent superconducting quantum pump

We demonstrate non-adiabatic charge pumping utilizing a sequence of coherent oscillations between a superconducting island and two reservoirs. Our method, based on pulsed quantum state manipulations, allows to speedup charge pumping to a rate which is limited by the coupling between the island and the reservoirs given by the Josephson energy. Our experimental and theoretical studies also demonstrate that relaxation can be employed to reset the pump and avoid accumulation of errors due to non-ideal control pulses.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Dynamics of coherent and incoherent emission from an artificial atom in a 1D space

We study dynamics of an artificial two-level atom in an open 1D space by measuring evolution of its coherent and incoherent emission. States of the atom -- a superconducting flux qubit coupled to a transmission line -- are fully controlled by resonant excitation microwave pulses. The coherent emission -- a direct measure of superposition in the atom -- exhibits decaying oscillations shifted by $π/2$ from oscillations of the incoherent emission, which, in turn, is proportional to the atomic population. The emission dynamics provides information about states and properties of the atom. By measuring the coherent dynamics, we derive two-time correlation function of fluctuations and, using quantum regression formula, reconstruct the incoherent spectrum of the resonance fluorescence triplet, which is in a good agreement with the directly measured one.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Large-scale defect accumulations in Czochralski-grown silicon

Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a FZ-grown silicon. A classification of the large-scale impurity accumulations in CZ Si is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si is also proposed. In addition, the images of the large-scale impurity accumulations obtained by means of the scanning mid-IR-laser microscopy are demonstrated.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors

A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a mid-IR-laser microscope---being sensitive to accumulations of free carriers enables the study of both accumulations of electrically-active defects or impurities in bulk semiconductors and doped domains in semiconductor structures. The optical beam induced scattering mode of this microscope is designed for the investigation of recombination-active defects but unlike EBIC it requires neither Schottky barrier or p--n junction nor special preparation of samples

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Optical beam-induced scattering mode of mid-IR laser microscopy: a method for defect investigation in near-surface and near-interface regions of bulk semiconductors

This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning mid-IR-laser microscopy. The technique in its present form is designed for investigation of large-scale recombination-active defects in near-surface and near-interface regions of semiconductor wafers. However, it can be easily modified for the defect investigations in the crystal bulk. Being in many respects analogous to EBIC, the present technique has some indisputable advantages, which enable its application for both non-destructive laboratory investigations and quality monitoring in the industry.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics

The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a promising material for photovoltaics - and multicrystalline silicon for solar cells. In addition, this technique was shown to be appropriate for imaging of polishing-induced defects as well as such huge defects as "pin holes". Besides, previously unexplained "anomalous" (cubic power) dependence of signal of the scanning mid-IR-laser microscope in the optical-beam-induced light scattering mode on the photoexcitation power obtained for mechanically polished samples has now been attributed to the excess carrier scattering on charged linear defects, likely dislocation lines. The conclusion is made in the article that the scanning mid-IR-laser microscopy may serve as very effective tool for defect investigations in materials for modern photovoltaics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Elastic Mid-Infrared Light Scattering: a Basis for Microscopy of Large-Scale Electrically Active Defects in Semiconducting Materials

A method of the mid-IR-laser microscopy has been proposed for the investigation of the large-scale electrically and recombination active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of the investigations on the low-angle mid-IR-light scattering in semiconductors. The essence of the technical idea was to apply the dark-field method for spatial filtering of the scattered light in the scanning mid-IR-laser microscope. This approach enabled the visualization of large-scale electrically active defects which are the regions enriched with ionized electrically active centers. The photoexcitation of excess carriers within a small volume located in the probe mid-IR-laser beam enabled the visualization of the large-scale recombination-active defects like those revealed in the optical or electron beam induced current methods. Both these methods of the scanning mid-IR-laser microscopy are now introduced in detail in the present paper as well as a summary of techniques used in the standard method of the lowangle mid-IR-light scattering itself. Besides the techniques for direct observations, methods for analyses of the defect composition associated with the mid-IR-laser microscopy are also discussed in the paper.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

On the nature of large-scale defect accumulations in Czochralski-grown silicon

Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a float zone-grown silicon. A classifcation of the large-scale impurity accumulations in CZ Si:B is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si:B is also proposed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Scanning mid-IR-laser microscopy: an efficient tool for materials studies in silicon-based photonics and photovoltaics

A method of scanning mid-IR-laser microscopy has recently been proposed for the investigation of large-scale electrically and recombination-active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of investigations on low-angle mid-IR-light scattering in semiconductors. The essence of the technical idea was to apply the dark-field method for spatial filtering of the scattered light in the scanning mid-IR-laser microscope together with the local photoexcitation of excess carriers within a small domain in a studied sample, thus forming an artificial source of scattering of the probe IR light for the recombination contrast imaging of defects. The current paper presents three contrasting examples of application of the above technique for defect visualization in silicon-based materials designed for photovoltaics and photonics which demonstrate that this technique might be an efficient tool for both defect investigation and industrial testing of semiconducting materials.

0 citations0 reviewsNo code linkedOpen access