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Researcher profile

A. N. Buzynin

A. N. Buzynin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.opticscond-mat.mes-hallcond-mat.other

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Published work

5 published item(s)

preprint2011arXiv

Application of elastic mid-IR light scattering for inspection of internal gettering operations

Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of the internal gettering efficiency and stability have been practically absent thus far. The purpose of this paper is to present such a method developed on the basis of law-angle mid-IR-light scattering technique (LALS), which has been successfully applied thus far for the investigation of large-scale electrically active defect accumulations (LSDAs) in semiconductor crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Application of elastic mid-IR-laser-light scattering for non-destructive inspection in microelectronics

Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper. The conclusion is made that the techniques in question might be very useful for solving a large number of problems regarding defect investigations and quality monitoring both in research laboratories and the industry of microelectronics

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preprint2011arXiv

Large-scale defect accumulations in Czochralski-grown silicon

Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a FZ-grown silicon. A classification of the large-scale impurity accumulations in CZ Si is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si is also proposed. In addition, the images of the large-scale impurity accumulations obtained by means of the scanning mid-IR-laser microscopy are demonstrated.

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preprint2010arXiv

On the nature of large-scale defect accumulations in Czochralski-grown silicon

Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a float zone-grown silicon. A classifcation of the large-scale impurity accumulations in CZ Si:B is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si:B is also proposed.

0 citations0 reviewsNo code linkedOpen access