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Researcher profile

O. I. Lebedev

O. I. Lebedev contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.opticscond-mat.str-elcond-mat.supr-con

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Published work

5 published item(s)

preprint2022arXiv

Raman fingerprints of ultrasmall nanodiamonds produced from adamantane

The synthesis of ultrasmall (2-5 nm) nanodiamonds purely from adamantane at pressure of 12 GPa is reported. Their structural features have been studied by Raman spectroscopy. The unusual vibration band containing a number of pronounced maxima at about 1147, 1245, 1344, and 1456 cm-1 was detected in Raman spectra. The band is confidently identified with the bending vibrational modes of CHx groups terminating the nanodiamonds surface. Excessively intense mode at 1344 cm-1 is explained by its coupling with the 1328 cm-1 diamond phonons. The Raman band found is proposed to be used for express recognition of ultrasmall nanodiamonds produced from adamantane and other hydrocarbons with a high hydrogen content. Moreover, polarized CH bonds on a diamond surface are sensitive to environmental conditions. This opens up opportunities for using the diamond produced from adamantane as ultrasmall nanosensors in biology, chemistry, and medicine

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Fano-type effect in hydrogen-terminated pure nanodiamond

Two novel properties, unique for semiconductors: a negative electron affinity [1-2], and a high p-type surface electrical conductivity [3-4], were discovered in diamond at the end of the last century. Both properties appear when the diamond surface is hydrogenated. A natural question arises: is the influence of the surface hydrogen on diamond limited only to the electrical properties? Here, we report the first observation of a transparency peak at 1328 cm-1 in IR absorption of hydrogen-terminated pure (undoped) nanodiamonds. This new optical property is ascribed to Fano-type destructive interference between zone-center phonons and free carriers (holes) appearing in the near-surface layer of hydrogenated nanodiamond. Our work opens the way to exploring the physics of electron-phonon coupling in undoped diamonds and promises the application of the H-terminated nanodiamonds as a new optical material with an induced transparency in IR optical range.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High Tc superconductivity in superlattices of insulating oxides

We report the occurrence of superconductivity, with maximum Tc = 40 K, in superlattices (SLs) based on two insulating oxides, namely CaCuO2 and SrTiO3. In these (CaCuO2)n/(SrTiO3)m SLs, the CuO2 planes belong only to CaCuO2 block, which is an antiferromagnetic insulator. Superconductivity, confined within few unit cells at the CaCuO2/SrTiO3 interface, shows up only when the SLs are grown in a highly oxidizing atmosphere, because of extra oxygen ions entering at the interfaces. Evidence is reported that the hole doping of the CuO2 planes is obtained by charge transfer from the interface layers, which act as charge reservoir.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Memristor Behaviour in Nano-Sized Vertical Lsmo/Lsmo Tunnel Junctions

We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS) resistance occurs at a bias field ~1 MV/cm. Applied electric field drops mostly at the insulating interfacial LSMO layer and couples to correlated polarons at the LSMO(111)/LSMO(111) vertical interfaces. The observed memristance behaviour has an electronic (polaronic) origin and is caused by an electric-field-controlled Jahn-Teller (JT) effect, followed by the orbital reconstruction and formation of a metastable orbitally disordered interfacial phase (LRS). Compared to the earlier reported ionic memristor in Ti-O films, an electronic (polaronic) nano-sized LSMO memristor shows an additional (re-entrant) LRS-HRS switching at higher fields because of the second minimum in the elastic energy of a JT system.

0 citations0 reviewsNo code linkedOpen access