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O. I. Lebedev

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Published work

8 published item(s)

preprint2022arXiv

Raman fingerprints of ultrasmall nanodiamonds produced from adamantane

The synthesis of ultrasmall (2-5 nm) nanodiamonds purely from adamantane at pressure of 12 GPa is reported. Their structural features have been studied by Raman spectroscopy. The unusual vibration band containing a number of pronounced maxima at about 1147, 1245, 1344, and 1456 cm-1 was detected in Raman spectra. The band is confidently identified with the bending vibrational modes of CHx groups terminating the nanodiamonds surface. Excessively intense mode at 1344 cm-1 is explained by its coupling with the 1328 cm-1 diamond phonons. The Raman band found is proposed to be used for express recognition of ultrasmall nanodiamonds produced from adamantane and other hydrocarbons with a high hydrogen content. Moreover, polarized CH bonds on a diamond surface are sensitive to environmental conditions. This opens up opportunities for using the diamond produced from adamantane as ultrasmall nanosensors in biology, chemistry, and medicine

preprint2021arXiv

Fano-type effect in hydrogen-terminated pure nanodiamond

Two novel properties, unique for semiconductors: a negative electron affinity [1-2], and a high p-type surface electrical conductivity [3-4], were discovered in diamond at the end of the last century. Both properties appear when the diamond surface is hydrogenated. A natural question arises: is the influence of the surface hydrogen on diamond limited only to the electrical properties? Here, we report the first observation of a transparency peak at 1328 cm-1 in IR absorption of hydrogen-terminated pure (undoped) nanodiamonds. This new optical property is ascribed to Fano-type destructive interference between zone-center phonons and free carriers (holes) appearing in the near-surface layer of hydrogenated nanodiamond. Our work opens the way to exploring the physics of electron-phonon coupling in undoped diamonds and promises the application of the H-terminated nanodiamonds as a new optical material with an induced transparency in IR optical range.

preprint2013arXiv

High-throughput synthesis of thermoelectric Ca$_3$Co$_4$O$_9$ films

Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to improved Seebeck coefficient. Instead of using single-crystal sapphire substrates to support epitaxial growth, Ca$_3$Co$_4$O$_9$ films are deposited, using the Pulsed Laser Deposition technique, onto Al$_2$O$_3$ polycrystalline substrates textured by Spark Plasma Sintering. The structural quality of the 2000 Åthin film was investigated by Transmission Electron Microscopy, while the crystallographic orientation of the grains and the epitaxial relationships were determined by Electron Back Scatter Diffraction. The use of a polycrystalline ceramic template leads to structured films that are in good local epitaxial registry. The Seebeck coefficient is about 170 $μ$V/K at 300 K, a typical value of misfit material with low carrier density. This high-throughput process, called combinatorial substrate epitaxy, appears to facilitate the rational tuning of functional oxide films, opening a route to the epitaxial synthesis of high quality complex oxides.

preprint2012arXiv

Charge localization at the interface between La1-xSrxMnO3 and the infinite layers cuprate CaCuO2

(CaCuO2)m/(La0.7Sr0.3MnO3)n superlattices, consisting of the infinite layers cuprate CaCuO2 and the optimally doped manganite La1-xSrxMnO3, were grown by pulsed laser deposition. The transport properties are dominated by the manganite block. X-Ray Absorption spectroscopy measurements show a clear evidence of an orbital reconstruction at the interface, ascribed to the hybridization between the Cu 3d3z2-r2 and the Mn 3d3z2-r2 orbitals via interface apical oxygen ions. Such a mechanism localizes holes at the interfaces, thus preventing charge transfer to the CaCuO2 block. Some charge (holes) transfer occurs toward the La0.7Sr0.3MnO3 block in strongly oxidized superlattices, contributing to the suppression of the magnetotransport properties.

preprint2012arXiv

High Tc superconductivity in superlattices of insulating oxides

We report the occurrence of superconductivity, with maximum Tc = 40 K, in superlattices (SLs) based on two insulating oxides, namely CaCuO2 and SrTiO3. In these (CaCuO2)n/(SrTiO3)m SLs, the CuO2 planes belong only to CaCuO2 block, which is an antiferromagnetic insulator. Superconductivity, confined within few unit cells at the CaCuO2/SrTiO3 interface, shows up only when the SLs are grown in a highly oxidizing atmosphere, because of extra oxygen ions entering at the interfaces. Evidence is reported that the hole doping of the CuO2 planes is obtained by charge transfer from the interface layers, which act as charge reservoir.

preprint2011arXiv

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.

preprint2010arXiv

Memristor Behaviour in Nano-Sized Vertical Lsmo/Lsmo Tunnel Junctions

We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS) resistance occurs at a bias field ~1 MV/cm. Applied electric field drops mostly at the insulating interfacial LSMO layer and couples to correlated polarons at the LSMO(111)/LSMO(111) vertical interfaces. The observed memristance behaviour has an electronic (polaronic) origin and is caused by an electric-field-controlled Jahn-Teller (JT) effect, followed by the orbital reconstruction and formation of a metastable orbitally disordered interfacial phase (LRS). Compared to the earlier reported ionic memristor in Ti-O films, an electronic (polaronic) nano-sized LSMO memristor shows an additional (re-entrant) LRS-HRS switching at higher fields because of the second minimum in the elastic energy of a JT system.

preprint2009arXiv

Interface controlled electronic variations in correlated heterostructures

An interface modification of LCMO-BTO superlattices was found to massively influence magnetic and magnetotransport properties. Moreover it determines the crystal structure of the manganite layers, changing it from orthorhombic (Pnma) for the conventional superlattice (cSL), to rhombohedral (R-3c) for the modified one (mSL). While the cSL shows extremely nonlinear ac transport, the mSL is an electrically homogeneous material. The observations go beyond an oversimplified picture of dead interface layers and evidence the importance of electronic correlations at perovskite interfaces.