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Noa Mazurski

Noa Mazurski appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticsphysics.app-phcond-mat.mes-hallcond-mat.mtrl-sciphysics.atom-ph

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Published work

8 published item(s)

preprint2021arXiv

Chiral light-matter interactions in hot vapor cladded waveguides

Recently, there is growing interest in integrating alkali vapors with nanoscale photonic structures, such as nano-waveguides, resonators and nanoantennas. Nanoscale confinement of electromagnetic fields may introduce a longitudinal electric field component, giving rise to circularly polarized modes which are essential for diverse applications involving vapor and light, such as chirality and non-reciprocity. Hereby, we have designed, fabricated and characterized a miniaturized vapor cell that is integrated with optical waveguides that are designed to generate a peculiar circular-like polarization. Taking advantage of this phenomenon, we demonstrate a spectral shift in the atomic absorption signatures at varying magnetic fields, and significant isolation between forward and backward propagating waves in our atomic-cladded waveguide. Our results pave the way for the utilization of chip-scale integrated atomic devices in applications such as optical isolation and high spatial resolution magnetometry.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dynamic Control of Plasmonic Colors by Voltage Actuation MEMS Cantilevers for Optical Display Applications

Conventional optical displays using ITO (indium tin oxide) and LC (liquid crystal) materials present a lot of challenges in terms of long-term sustainability. We show here how it is possible to generate a cost effective and CMOS compatible fast and full range electrically controlled RGB color display by combining transmission based plasmonic metasurfaces with MEMS (Microelectromechanical systems) technology, using only two common materials: Aluminum and silicon oxide. White light is filtered into red, green, and blue components by plasmonic metasurfaces made of aluminum nanohole arrays, and the transmission through each color filter is modulated by MEMS miniaturized cantilevers fabricated with aluminum and silicon oxide on top of the color filters. We show that the relative transmission of a color subpixel can be freely modulated from 35% to 100%. Our pixels can also operate well above 800Hz, enabling future ultrafast displays. Our work provides a road to future circular economic goals by exploiting advances in structural colors and MEMS technologies to innovate optical displays.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Opto-thermal transport engineering in hybrid organic-inorganic lead halide perovskites metasurfaces

Halide perovskites have recently gained widespread attention for their exceptional optoelectronic properties which have been illuminated by extensive spectroscopic investigations. In this article, nanophotonic surface-engineering using soft-lithography has been used to reproduce nanostructures with enhanced functionalities. A non-invasive optical technique based on Raman and photolumines-cence (PL) spectroscopy is employed to investigate the interactive effect of the thermal and optical behaviour in surface-patterned hybrid organic-inorganic halide perovskite thin films. The thermophys-ical properties of the engineered perovskite films are extracted from the softening of the representa-tive peak positions in the Raman and PL spectra of the samples which act as temperature markers. The investigation suggests a comparatively higher rise in the local temperature for the patterned thin films resulting from their enhanced absorption. Therefore, a cross-talk between the opto-thermal transport phenomena in imprinted perovskite thin films pertaining to both enhancing device properties along with maintaining device stability is established.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Photo memtransistor based on CMOS flash memory technology on Graphene with neuromorphic applications

Graphene holds a great promise for a number of diverse future applications, in particular related to its easily tunable doping and Fermi level by electrostatic gating. However, as of today, most implementations rely on electrical doping via the application of continuous large voltages to maintain the desired doping. We show here how graphene can be implemented with conventional semiconductor flash memory technology in order to make programmable doping possible, simply by the application of short gate pulses. We also demonstrate how this approach can be used for a memory device, and also show potential neuromorphic capabilities of the device. Finally, we show that the overall performance can be significantly enhanced by illuminating the device with UV radiation. Our approach may pave the way for integrating graphene in CMOS technology memory applications, and our device design could also be suitable for large scale neuromorphic computing structures.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Giant enhancement of silicon plasmonic SWIR photodetection using nanoscale self-organised metallic films

Many consumer technologies and scientific methods rely on photodetection of infrared light. We report a Schottky photodetector operating below silicon's band gap energy, through hot carrier injection from a nanoscale metallic absorber. Our design relies on simple CMOS-compatible 'bottom up' fabrication of fractally nanostructured aluminium films. Due to the fractal nature of the nanostructuring, the aluminium films support plasmonically enhanced absorption over a wide wavelength range. We demonstrate two orders of magnitude improvements of responsivity, noise-equivalent-power, and detectivity as compared to bulk metal, over a broad spectral and angular range. We attribute this to momentum relaxation processes from the nanoscale fractal geometry. Specifically, we demonstrate a direct link between quantum efficiency enhancement and structural parameters such as perimeter to surface ratio. Finally, our devices also function as bulk refractive index sensors. Our approach is a promising candidate for future cost effective and robust short wave infrared photodetection and sensing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

On-chip detection of radiation guided by dielectric-loaded plasmonic waveguides

We report a novel approach for on-chip electrical detection of the radiation guided by dielectric-loaded surface plasmon polariton waveguides (DLSPPW) and DLSPPW-based components. The detection is realized by fabricating DLSPPW components on the surface of a gold (Au) pad supported by a silicon (Si) substrate supplied with aluminum pads facilitating electrical connections, with the gold pad being perforated in a specific locations below the DLSPPWs in order to allow a portion of the DLSPPW-guided radiation to leak into the Si-substrate, where it is absorbed and electrically detected. We present two-dimensional photocurrent maps obtained when the laser beam is scanning across the gold pad containing the fabricated DLSPPW components that are excited via grating couplers located at the DLSPPW tapered terminations. By comparing photocurrent signals obtained when scanning over a DLSPPW straight waveguide with those related to a DLSPPW racetrack resonator, we first determine the background signal level and then the corrected DLSPPW resonator spectral response, which is found consistent with that obtained from full wave numerical simulations. The approach developed can be extended to other plasmonic waveguide configurations and advantageously used for rapid characterization of complicated plasmonic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

On-chip integrated, silicon-graphene plasmonic Schottky photodetector, with high responsivity and avalanche photogain

We report an on-chip integrated metal-graphene-silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 um and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain~2. This paves the way to graphene integrated silicon photonics.

0 citations0 reviewsNo code linkedOpen access