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Christian Frydendahl

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cond-mat.mes-hall physics.app-ph physics.optics cond-mat.mtrl-sci

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preprint2021arXiv

Dynamic Control of Plasmonic Colors by Voltage Actuation MEMS Cantilevers for Optical Display Applications

Conventional optical displays using ITO (indium tin oxide) and LC (liquid crystal) materials present a lot of challenges in terms of long-term sustainability. We show here how it is possible to generate a cost effective and CMOS compatible fast and full range electrically controlled RGB color display by combining transmission based plasmonic metasurfaces with MEMS (Microelectromechanical systems) technology, using only two common materials: Aluminum and silicon oxide. White light is filtered into red, green, and blue components by plasmonic metasurfaces made of aluminum nanohole arrays, and the transmission through each color filter is modulated by MEMS miniaturized cantilevers fabricated with aluminum and silicon oxide on top of the color filters. We show that the relative transmission of a color subpixel can be freely modulated from 35% to 100%. Our pixels can also operate well above 800Hz, enabling future ultrafast displays. Our work provides a road to future circular economic goals by exploiting advances in structural colors and MEMS technologies to innovate optical displays.

preprint2021arXiv

Photo memtransistor based on CMOS flash memory technology on Graphene with neuromorphic applications

Graphene holds a great promise for a number of diverse future applications, in particular related to its easily tunable doping and Fermi level by electrostatic gating. However, as of today, most implementations rely on electrical doping via the application of continuous large voltages to maintain the desired doping. We show here how graphene can be implemented with conventional semiconductor flash memory technology in order to make programmable doping possible, simply by the application of short gate pulses. We also demonstrate how this approach can be used for a memory device, and also show potential neuromorphic capabilities of the device. Finally, we show that the overall performance can be significantly enhanced by illuminating the device with UV radiation. Our approach may pave the way for integrating graphene in CMOS technology memory applications, and our device design could also be suitable for large scale neuromorphic computing structures.

preprint2019arXiv

Giant enhancement of silicon plasmonic SWIR photodetection using nanoscale self-organised metallic films

Many consumer technologies and scientific methods rely on photodetection of infrared light. We report a Schottky photodetector operating below silicon's band gap energy, through hot carrier injection from a nanoscale metallic absorber. Our design relies on simple CMOS-compatible 'bottom up' fabrication of fractally nanostructured aluminium films. Due to the fractal nature of the nanostructuring, the aluminium films support plasmonically enhanced absorption over a wide wavelength range. We demonstrate two orders of magnitude improvements of responsivity, noise-equivalent-power, and detectivity as compared to bulk metal, over a broad spectral and angular range. We attribute this to momentum relaxation processes from the nanoscale fractal geometry. Specifically, we demonstrate a direct link between quantum efficiency enhancement and structural parameters such as perimeter to surface ratio. Finally, our devices also function as bulk refractive index sensors. Our approach is a promising candidate for future cost effective and robust short wave infrared photodetection and sensing applications.

preprint2013arXiv

Direct Measurement of Surface Transport on a Bulk Topological Insulator

Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining bulk conductivity, surface contributions to transport have so-far only been singled out indirectly via quantum oscillations, or for devices based on gated and doped topological insulator thin films, a situation in which the surface carrier mobility could be limited by defect and interface scattering. Here we present the first direct measurement of surface-dominated conduction on an atomically clean surface of bulk-insulating Bi$_2$Te$_2$Se. Using nano-scale four point setups with variable contact distance, we show that the transport at 30 K is two-dimensional rather than three-dimensional and by combining these measurements with angle-resolved photoemission results from the same crystals, we find a surface state mobility of 390(30) cm$^{2}$V$^{-1}$s$^{-1}$ at 30 K at a carrier concentration of 8.71(7)$\times 10^{12}$ cm$^{-2}$.