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Boris Desiatov

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physics.optics cond-mat.mes-hall physics.app-ph physics.atom-ph quant-ph

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preprint2024arXiv

Supercontinuum Generation by Saturated Second-Order Nonlinear Interactions

We propose a new approach to supercontinuum generation and carrier-envelope-offset detection based on saturated second-order nonlinear interactions in dispersion-engineered nanowaveguides. The technique developed here broadens the interacting harmonics by forming stable bifurcations of the pulse envelopes due to an interplay between phase-mismatch and pump depletion. We first present an intuitive heuristic model for spectral broadening by second-harmonic generation of femtosecond pulses, and show that this model agrees well with experiments. Then, having established strong agreement between theory and experiment, we develop scaling laws that determine the energy required to generate an octave of bandwidth as a function of input pulse duration, device length, and input pulse chirp. These scaling laws suggest that future realization based on this approach could enable supercontinuum generation with orders of magnitude less energy than current state-of-the-art devices.

preprint2022arXiv

Quasi-static Optical Parametric Amplification

High-gain optical parametric amplification is an important nonlinear process used both as a source of coherent infrared light and as a source of nonclassical light. In this work, we experimentally demonstrate an approach to optical parametric amplification that enables extremely large parametric gains with low energy requirements. In conventional nonlinear media driven by femtosecond pulses, multiple dispersion orders limit the effective interaction length available for parametric amplification. Here, we use the dispersion engineering available in periodically poled thin-film lithium niobate nanowaveguides to eliminate several dispersion orders at once. The result is a quasi-static process; the large peak intensity associated with a short pump pulse can provide gain to signal photons without undergoing pulse distortion or temporal walk-off. We characterize the parametric gain available in these waveguides using optical parametric generation, where vacuum fluctuations are amplified to macroscopic intensities. When driven with pulse energies in excess of 10 pJ, we observe saturated parametric gains as large as 88 dB (146 dB/cm). The devices shown here achieve saturated optical parametric generation with orders of magnitude less pulse energy than previous techniques.

preprint2020arXiv

On-chip self-referencing using integrated lithium niobate waveguides

The measurement and stabilization of the carrier-envelope offset frequency $f_{\textrm{CEO}}$ via self-referencing is paramount for optical frequency comb generation which has revolutionized precision frequency metrology, spectroscopy, and optical clocks. Over the past decade, the development of chip-scale platforms has enabled compact integrated waveguides for supercontinuum generation. However, there is a critical need for an on-chip self-referencing system that is adaptive to different pump wavelengths, requires low pulse energy, and does not require complicated processing. Here, we demonstrate efficient carrier-envelope offset frequency $f_{\textrm{CEO}}$ stabilization of a modelocked laser with only 107 pJ of pulse energy via self-referencing in an integrated lithium niobate waveguide. We realize an $f$-$2f$ interferometer through second-harmonic generation and subsequent supercontinuum generation in a single dispersion-engineered waveguide with a stabilization performance equivalent to a conventional off-chip module. The $f_{\textrm{CEO}}$ beatnote is measured over a pump wavelength range of 70 nm. We theoretically investigate our system using a single nonlinear envelope equation with contributions from both second- and third-order nonlinearities. Our modeling reveals rich ultrabroadband nonlinear dynamics and confirms that the initial second harmonic generation followed by supercontinuum generation with the remaining pump is responsible for the generation of a strong $f_{\textrm{CEO}}$ signal as compared to a traditional $f$-$2f$ interferometer. Our technology provides a highly-simplified system that is robust, low cost, and adaptable for precision metrology for use outside a research laboratory.

preprint2016arXiv

On-chip detection of radiation guided by dielectric-loaded plasmonic waveguides

We report a novel approach for on-chip electrical detection of the radiation guided by dielectric-loaded surface plasmon polariton waveguides (DLSPPW) and DLSPPW-based components. The detection is realized by fabricating DLSPPW components on the surface of a gold (Au) pad supported by a silicon (Si) substrate supplied with aluminum pads facilitating electrical connections, with the gold pad being perforated in a specific locations below the DLSPPWs in order to allow a portion of the DLSPPW-guided radiation to leak into the Si-substrate, where it is absorbed and electrically detected. We present two-dimensional photocurrent maps obtained when the laser beam is scanning across the gold pad containing the fabricated DLSPPW components that are excited via grating couplers located at the DLSPPW tapered terminations. By comparing photocurrent signals obtained when scanning over a DLSPPW straight waveguide with those related to a DLSPPW racetrack resonator, we first determine the background signal level and then the corrected DLSPPW resonator spectral response, which is found consistent with that obtained from full wave numerical simulations. The approach developed can be extended to other plasmonic waveguide configurations and advantageously used for rapid characterization of complicated plasmonic circuits.

preprint2015arXiv

On-chip integrated, silicon-graphene plasmonic Schottky photodetector, with high responsivity and avalanche photogain

We report an on-chip integrated metal-graphene-silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 um and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain~2. This paves the way to graphene integrated silicon photonics.

preprint2014arXiv

Model for quantum efficiency of guided mode plasmonic enhanced silicon Schottky detectors

Plasmonic enhanced Schottky detectors operating on the basis of the internal photoemission process are becoming an attractive choice for detecting photons with sub bandgap energy. Yet, the quantum efficiency of these detectors appears to be low compare to the more conventional detectors which are based on interband transitions in a semiconductor. Hereby we provide a theoretical model to predict the quantum efficiency of guided mode internal photoemission photodetector with focus on the platform of silicon plasmonics. The model is supported by numerical simulations and comparison to experimental results. Finally, we discuss approaches for further enhancement of the quantum efficiency.

preprint2012arXiv

Evanescent light-matter Interactions in Atomic Cladding Wave Guides

Alkali vapors, and in particular rubidium, are being used extensively in several important fields of research such as slow and stored light non-linear optics3 and quantum computation. Additionally, the technology of alkali vapors plays a major role in realizing myriad industrial applications including for example atomic clocks magentometers8 and optical frequency stabilization. Lately, there is a growing effort towards miniaturizing traditional centimeter-size alkali vapor cells. Owing to the significant reduction in device dimensions, light matter interactions are greatly enhanced, enabling new functionalities due to the low power threshold needed for non-linear interactions. Here, taking advantage of the mature Complimentary Metal-Oxide-Semiconductor (CMOS) compatible platform of silicon photonics, we construct an efficient and flexible platform for tailored light vapor interactions on a chip. Specifically, we demonstrate light matter interactions in an atomic cladding wave guide (ACWG), consisting of CMOS compatible silicon nitride nano wave-guide core with a Rubidium (Rb) vapor cladding. We observe the highly efficient interaction of the electromagnetic guided mode with the thermal Rb cladding. The nature of such interactions is explained by a model which predicts the transmission spectrum of the system taking into account Doppler and transit time broadening. We show, that due to the high confinement of the optical mode (with a mode area of 0.3λ2), the Rb absorption saturates at powers in the nW regime.