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Nikesh Koirala

Nikesh Koirala appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-concond-mat.str-elphysics.optics

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Published work

17 published item(s)

preprint2020arXiv

Dirac surface states in superconductors: a dual topological proximity effect

In this paper we present scanning tunneling microscopy of Bi$_2$Se$_3$ with superconducting Nb deposited on the surface. We find that the topologically protected surface states of the Bi$_2$Se$_3$ leak into the superconducting over-layer, suggesting a dual topological proximity effect. Coupling between theses states and the Nb states leads to an effective pairing mechanism for the surface states, leading to a modified model for a topological superconductor in these systems. This model is consistent with fits between the experimental data and the theory.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Finite-size and composition-driven topological phase transition in (Bi$_{1-x}$In$_x$)$_2$Se$_3$ thin films

In a topological insulator (TI), if its spin-orbit coupling (SOC) strength is gradually reduced, the TI eventually transforms into a trivial insulator beyond a critical point of SOC, at which point the bulk gap closes: this is the standard description of the topological phase transition (TPT). However, this description of TPT, driven solely by the SOC (or something equivalent) and followed by closing and reopening of the bulk band gap, is valid only for infinite-size samples, and little is known how TPT occurs for finite-size samples. Here, using both systematic transport measurements on interface-engineered(Bi$_{1-x}$In$_x$)$_2$Se$_3$ thin films and theoretical simulations (with animations in Supporting Information) we show that description of TPT in finite-size samples needs to be substantially modified from the conventional picture of TPT due to surface-state hybridization and bulk confinement effects. We also show that the finite-size TPT is composed of two separate transitions, topological-normal transition (TNT) and metal-insulator transition (MIT) by providing a detailed phase diagram in the two-dimensional phase space of sample size and SOC strength.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Helicity dependent photovoltaic effect in Bi2Se3 under normal incident light

Topological insulators (TIs) form a new class of materials with insulating bulk and surface conduction ensured by topologically protected surface states (TPSS). We investigate the impact of the helicity of a normally incident laser beam on the photovoltaic effect in the TI Bi2Se3. The observation of a helicity dependent photovoltaic effect for normally incident light indicates the presence of out-of-plane spin components for some TPSSs due to the hexagonal warping. In addition, fluctuations in the electrostatic potential at the surface locally break the rotational symmetry of the film allowing the helicity dependent photovoltaic effect. Our result suggests that engineering local electrostatic potentials in Bi2Se3 would allow the control of optically generated spin currents, which may be useful for applications in spin-optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Tunable inverse topological heterostructure utilizing $(Bi_{1-x}In_{x})_{2}Se_{3}$

In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement the first material system where the roles are reversed, and the TSS form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI $(Bi_{1-x}In_{x})_{2}Se_{3}$ in between two layers of the TI $Bi_2Se_3$ using the atomically-precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of the $(Bi_{1-x}In_{x})_{2}Se_{3}$ layer and show that this tunes the coupling between the TI layers from strongly-coupled metallic to weakly-coupled, and finally to a fully-decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Plasmon-phonon interactions in topological insulator rings

The great potential of Dirac electrons for plasmonics and photonics has been readily recognized after their discovery in graphene, followed by applications to smart optical devices. Dirac carriers are also found in topological insulators (TI) --quantum systems having an insulating gap in the bulk and intrinsic Dirac metallic states at the surface--. Here, we investigate the plasmonic response of ring structures patterned in Bi$_2$Se$_3$ TI films, which we investigate through terahertz (THz) spectroscopy. The rings are observed to exhibit a bonding and an antibonding plasmon modes, which we tune in frequency by varying their diameter. We develop an analytical theory based on the THz conductivity of unpatterned films, which accurately describes the strong plasmon-phonon hybridization and Fano interference experimentally observed as the bonding plasmon is swiped across the promineng 2\,THz phonon exhibited by this material. This work opens the road for the investigation of plasmons in topological insulators and for their application in tunable THz devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Stability of low-carrier-density topological-insulator Bi$_2$Se$_3$ thin films and effect of capping layers

Although over the past number of years there have been many advances in the materials aspects of topological insulators (TI), one of the ongoing challenges with these materials is the protection of them against aging. In particular, the recent development of low-carrier-density bulk-insulating Bi$_2$Se$_3$ thin films and their sensitivity to air demands reliable capping layers to stabilize their electronic properties. Here, we study the stability of the low-carrier-density Bi$_2$Se$_3$ thin films in air with and without various capping layers using DC and THz probes. Without any capping layers, the carrier density increases by ~150% over a week and by ~280% over 9 months. In situ-deposited Se and ex situ-deposited Poly(methyl methacrylate) (PMMA) suppresses the aging effect to ~27% and ~88% respectively over 9 months. The combination of effective capping layers and low-carrier-density TI films will open up new opportunities in topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Topological Surface States Originated Spin-Orbit Torques in Bi2Se3

Three dimensional topological insulator bismuth selenide (Bi2Se3) is expected to possess strong spin-orbit coupling and spin-textured topological surface states, and thus exhibit a high charge to spin current conversion efficiency. We evaluate spin-orbit torques in Bi2Se3/Co40Fe40B20 devices at different temperatures by spin torque ferromagnetic resonance measurements. As temperature decreases, the spin-orbit torque ratio increases from ~ 0.047 at 300 K to ~ 0.42 below 50 K. Moreover, we observe a significant out-of-plane torque at low temperatures. Detailed analysis indicates that the origin of the observed spin-orbit torques is topological surface states in Bi2Se3. Our results suggest that topological insulators with strong spin-orbit coupling could be promising candidates as highly efficient spin current sources for exploring next generation of spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Emergence of decoupled surface transport channels in bulk insulating Bi2Se3 thin films

In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating, should not provide any electric coupling between the two metallic surfaces. However, transport studies on existing TI films show that the topological states on opposite surfaces are electrically tied to each other at thicknesses far greater than the direct coupling limit where the surface wavefunctions overlap. Here, we show that as the conducting bulk channels are suppressed, the parasitic coupling effect diminishes and the decoupled surface channels emerge as expected for ideal TIs. In Bi2Se3 thin films with fully suppressed bulk states, the two surfaces, which are directly coupled below ~10 QL, become gradually isolated with increasing thickness and are completely decoupled beyond ~20 QL. On such a platform, it is now feasible to implement transport devices whose functionality relies on accessing the individual surface layers without any deleterious coupling effects.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Observation of inverse spin Hall effect in bismuth selenide

Bismuth Selenide (Bi2Se3) is a topological insulator exhibiting helical spin polarization and strong spin-orbit coupling. The spin-orbit coupling links the charge current to spin current via the spin Hall effect (SHE). We demonstrate a Bi2Se3 spin detector by injecting the pure spin current from a magnetic permalloy layer to a Bi2Se3 thin film and detect the inverse SHE in Bi2Se3. The spin Hall angle of Bi2Se3 is found to be 0.0093 and the spin diffusion length in Bi2Se3 to be 6.2 nm at room temperature. Our results suggest that topological insulators with strong spin-orbit coupling can be used in functional spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Restoring Pristine Bi2Se3 Surface with an Effective Se Decapping Process

High quality thin films of topological insulators (TI) such as Bi2Se3 have been successfully synthesized by molecular beam epitaxy (MBE). Although the surface of MBE films can be protected by capping with inert materials such as amorphous Se, restoring an atomically clean pristine surface after decapping has never been demonstrated, which prevents in-depth investigations of the intrinsic properties of TI thin films with ex-situ tools. Using high resolution scanning tunneling microscopy/spectroscopy (STM/STS), we demonstrate a simple and highly reproducible Se decapping method that allows recovery of the pristine surface of extremely high quality Bi2Se3 thin films grown and capped with Se in a separate MBE system then exposed to atmosphere during transfer into the STM system. The crucial step of our decapping process is the removal of the surface contaminants on top of amorphous Se before thermal desorption of Se at a mild temperature (~210 °C). This effective Se decapping process opens up the possibility of ex-situ characterizations of pristine surfaces of interesting selenide materials and beyond using cutting-edge techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect

The recent emergence of topological insulators (TI) has spurred intensive efforts to grow TI thin films on various substrates. However, little is known about how robust the topological surface states (TSS) are against disorders and other detrimental effects originating from the substrates. Here, we report observation of a well-defined TSS on Bi2Se3 films grown on amorphous SiO2 (a-SiO2) substrates and a large gating effect on these films using the underneath doped-Si substrate as the back gate. The films on a-SiO2 were composed of c-axis ordered but random in-plane domains. However, despite the in-plane randomness induced by the amorphous substrate, the transport properties of these films were superior to those of similar films grown on single-crystalline Si(111) substrates, which are structurally better matched but chemically reactive with the films. This work sheds light on the importance of chemical compatibility, compared to lattice matching, for the growth of TI thin films, and also demonstrates that the technologically-important and gatable a-SiO2/Si substrate is a promising platform for TI films.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Transferring MBE-grown topological insulator films to arbitrary substrates and Metal-insulator transition via Dirac gap

Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only micro-sized flakes that are highly irregular in shape and thickness. In this work, we developed a process to transfer the entire area of TI Bi2Se3 thin films grown epitaxially on Al2O3 and SiO2 to arbitrary substrates, maintaining their pristine morphology and crystallinity. Transport measurements show that these transferred films have lower carrier concentrations and comparable or higher mobilities than before the transfer. Furthermore, using this process we demonstrated a clear metal-insulator transition in an ultrathin Bi2Se3 film by gate-tuning its Fermi level into the hybridization gap formed at the Dirac point. The ability to transfer large area TI films to any substrate will facilitate fabrication of TI heterostructure devices, which will help explore exotic phenomena such as Majorana fermions and topological magnetoelectricity.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Transport Properties of Topological Insulators: Band Bending, Bulk Metal-to-Insulator Transition, and Weak Anti-Localization

We reanalyze some of the critical transport experiments and provide a coherent understanding of the current generation of topological insulators (TIs). Currently TI transport studies abound with widely varying claims of the surface and bulk states, often times contradicting each other, and a proper understanding of TI transport properties is lacking. According to the simple criteria given by Mott and Ioffe-Regel, even the best TIs are not true insulators in the Mott sense, and at best, are weakly-insulating bad metals. However, band-bending effects contribute significantly to the TI transport properties including Shubnikov de-Haas oscillations, and we show that utilization of this band-bending effect can lead to a Mott insulating bulk state in the thin regime. In addition, by reconsidering previous results on the weak anti-localization (WAL) effect with additional new data, we correct a misunderstanding in the literature and generate a coherent picture of the WAL effect in TIs.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Signature of a topological phase transition in the Josephson supercurrent through a topological insulator

Topological insulators (TIs) hold great promise for realizing zero-energy Majorana states in solid-state systems. Recently, several groups reported experimental data suggesting that signatures of Majorana modes in topological insulator Josephson junctions (TIJJs) have -- indeed -- been observed. To verify this claim, one needs to study the topological properties of low-energy Andreev-bound states (ABS) in TIs of which the Majorana modes are a special case. It has been shown theoretically that topologically non-trivial low-energy ABS are also present in TIJJs with doped topological insulators up to some critical level of doping at which the system undergoes a topological phase transition. Here, we present first experimental evidence for this topological transition in the bulk band of a doped TI. Our theoretical calculations, and numerical modeling link abrupt changes in the critical current of top-gated TIJJs to moving the chemical potential in the charge-accumulation region on the surface of the doped TI across a band-inversion point. We demonstrate that the critical-current changes originate from a shift of the spatial location of low-energy ABS from the surface to the boundary between topologically-trivial and band-inverted regions after the transition. The appearance of a decay channel for surface ABS is related to the vanishing of the band effective mass in the bulk and thus exemplifies the topological character of surface ABS as boundary modes. Importantly, the mechanism suggest a means of manipulating Majorana modes in future experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Topological-Metal to Band-Insulator Transition in (Bi1-xInx)2Se3 Thin Films

By combining transport and photo emission measurements on (Bi1-xInx)2Se3 thin films, we report that this system transforms from a topologically non-trivial metal into a topologically trivial band insulator through three quantum phase transitions. At x = 3-7%, there is a transition from a topologically non-trivial metal to a trivial metal. At x = 15%, the metal becomes a variable-range-hopping insulator. Finally, above x = 25%, the system becomes a true band insulator with its resistance immeasurably large even at room temperature. This material provides a new venue to investigate topologically tunable physics and devices with seamless gating/tunneling insulators.

0 citations0 reviewsNo code linkedOpen access