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Nicolas Fressengeas

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Published work

9 published item(s)

preprint2016arXiv

Numerical simulation of InGaN Schottky solar cell

The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potentiality to allow achieving high efficiency solar cells through the tuning of its band gap by changing the Indium composition. It also counts among its advantages a relatively low effective mass, high carriersâ mobility, a high absorption coefficient along with good radiation tolerance.However, the main drawback of InGaN is linked to its p-type doping, which is difficult to grow in good quality and on which ohmic contacts are difficult to realize. The Schottky solar cell is a good alternative to avoid the p-type doping of InGaN. In this report, a comprehensive numerical simulation, using mathematically rigorous optimization approach based on state-of-the-art optimization algorithms, is used to find the optimum geometrical and physical parameters that yield the best efficiency of a Schottky solar cell within the achievable device fabrication range. A 18.2% efficiency is predicted for this new InGaN solar cell design.

preprint2016arXiv

Simulation study of a new InGaN p-layer free Schottky based solar cell

On the road towards next generation high efficiency solar cells, the ternary Indium Gallium Nitride (InGaN) alloy is a good passenger since it allows to cover the whole solar spectrum through the change in its Indium composition. The choice of the main structure of the InGaN solar cell is however crucial. Obtaining a high efficiency requires to improve the light absorption and the photogenerated carriers collection that depend on the layers parameters, including the Indium composition, p-and n-doping, device geometry.. . Unfortunately, one of the main drawbacks of InGaN is linked to its p-type doping, which is very difficult to realize since it involves complex technological processes that are difficult to master and that highly impact the layer quality. In this paper, the InGaN p-n junction (PN) and p-in junction (PIN) based solar cells are numerically studied using the most realistic models, and optimized through mathematically rigorous multivariate optimization approaches. This analysis evidences optimal efficiencies of 17.8% and 19.0% for the PN and PIN structures. It also leads to propose, analyze and optimize player free InGaN Schottky-Based Solar Cells (SBSC): the Schottky structure and a new MIN structure for which the optimal efficiencies are shown to be a little higher than for the conventional structures: respectively 18.2% and 19.8%. The tolerance that is allowed on each parameter for each of the proposed cells has been studied. The new MIN structure is shown to exhibit the widest tolerances on the layers thicknesses and dopings. In addition to its being player free, this is another advantage of the MIN structure since it implies its better reliability. Therefore, these new InGaN SBSC are shown to be alternatives to the conventional structures that allow removing the p-type doping of InGaN while giving photovoltaic (PV) performances at least comparable to the standard multilayers PN or PIN structures.

preprint2013arXiv

Robust Design by Antioptimization for Parameter Tolerant GaAs/AlOx High Contrast Grating Mirror for VCSEL Application

A GaAs/AlOx high contrast grating structure design which exhibits a 99.5% high reflectivity for a 425nm large bandwidth is reported. The high contrast grating (HCG) structure has been designed in order to enhance the properties of mid-infrared VCSEL devices by replacing the top Bragg mirror of the cavity. A robust optimization algorithm has been implemented to design the HCG structure not only as an efficient mirror but also as a robust structure against the imperfections of fabrication. The design method presented here can be easily adapted for other HCG applications at different wavelengths.

preprint2012arXiv

Robust design of Si/Si3N4 high contrast grating mirror for mid-infrared VCSEL application

A Si/Si3N4 high contrast grating mirror has been designed for a VCSEL integration in mid-infrared (λ = 2.65 $μ$m). The use of an optimization algorithm which maximizes a VCSEL mirror quality factor allowed the adjustment of the grating parameters while keeping large and shallow grating pattern. The robustness with respect to fabrication error has been enhanced thanks to a precise study of the grating dimension tolerances. The final mirror exhibits large high reflectivity bandwidth with a polarization selectivity and several percent of tolerance on the grating dimensions.

preprint2011arXiv

Mid-infrared sub-wavelength grating mirror design: tolerance and influence of technological constraints

High polarization selective Si/SiO2 mid-infrared sub-wavelength grating mirrors with large bandwidth adapted to VCSEL integration are compared. These mirrors have been automatically designed for operation at λ= 2.3 $μ$m by an optimization algorithm which maximizes a specially defined quality factor. Several technological constraints in relation with the grating manufacturing process have been imposed within the optimization algorithm and their impact on the optical properties of the mirror have been evaluated. Furthermore, through the tolerance computation of the different dimensions of the structure, the robustness with respect to fabrication errors has been tested. Finally, it appears that the increase of the optical performances of the mirror imposes a less tolerant design with severer technological constraints resulting in a more stringent control of the manufacturing process.

preprint2011arXiv

Optimized Si/SiO2 high contrast grating mirror design for mid-infrared wavelength range: robustness enhancement

A high reflectivity and polarization selective high contrast grating mirror has been designed with the use of an automated optimization algorithm. Through a precise study of the tolerance of the different lengths of the structure, the robustness with respect to the fabrication errors has been enhanced to high tolerance values between 5 % and 210 %. This adjustment of the dimensions of the structure leads to a 250 nm large bandwidth mirror well adapted for a VCSEL application at λ= 2.65 $μ$m and can easily be scaled for other wavelengths.

preprint2009arXiv

The theory of photorefractive resonance for localized beams in two-carrier photorefractive systems

This paper extends the existing theory of two carrier photorefractivity resonance, which is generally applied to Iron doped Indium Phosphide (InP:Fe), to the case of low non-harmonic illumination. The space charge field profile is computed, and the variations of its amplitude, width and position are determined as functions of the background intensity. The effect of photorefractive resonance on these quantities is evidenced, contributing to the understanding of published experimental results in InP:Fe.

preprint2006arXiv

Modelling the growth of a polymer micro-tip on an optical fiber end

Manufacturing end-of-fiber optical components able to realize optical functions ranging from a simple lens to more complex functions such as mode selective components is a decisive but \emph{a priori} complex task owing to the fiber core dimensions. Effective low cost methods allowing to grow polymer components by free-radical photopolymerization using the light coming out of the fiber have recently been reported. A novel phenomenological model of the photopolymerization process underlying is here given and used to simulate the polymer component growth in a three dimensional time-resolved manner. The simulations results are thus used to understand and optimize the component growth conditions, focusing particularly on the role of oxygen either present in the atmosphere or dissolved in the solution.