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Sidi Ould Saad Hamady

Sidi Ould Saad Hamady appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2022arXiv

PyEOC: a Python Code for Determining Electro-Optic Coefficients of Thin-Film Materials

PyEOC is an open-source Python code for determining electro-optic (EO) coefficients of thin-film materials from the static and dynamic reflectivity measurements. It uses the experimental results, the transfer-matrix method and implements a robust fitting procedure to precisely calculate the EO coefficients. The developed code is applied to a Pt/SBN/Pt/MgO structure and can be easily adapted to any multilayer planar structure. The values of the EO coefficients determined using PyEOC are in excellent agreement with those obtained in the literature and this code will make it possible to explore EO properties of other thin-film materials, in particular III-V and III-N semiconductors. PyEOC is released under the permissive open-source MIT license. It is made available at https://github.com/sidihamady/PyEOC and depends only on standard Python packages (NumPy, SciPy and Matplotlib).

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preprint2016arXiv

Numerical simulation of InGaN Schottky solar cell

The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potentiality to allow achieving high efficiency solar cells through the tuning of its band gap by changing the Indium composition. It also counts among its advantages a relatively low effective mass, high carriersâ mobility, a high absorption coefficient along with good radiation tolerance.However, the main drawback of InGaN is linked to its p-type doping, which is difficult to grow in good quality and on which ohmic contacts are difficult to realize. The Schottky solar cell is a good alternative to avoid the p-type doping of InGaN. In this report, a comprehensive numerical simulation, using mathematically rigorous optimization approach based on state-of-the-art optimization algorithms, is used to find the optimum geometrical and physical parameters that yield the best efficiency of a Schottky solar cell within the achievable device fabrication range. A 18.2% efficiency is predicted for this new InGaN solar cell design.

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preprint2016arXiv

Simulation study of a new InGaN p-layer free Schottky based solar cell

On the road towards next generation high efficiency solar cells, the ternary Indium Gallium Nitride (InGaN) alloy is a good passenger since it allows to cover the whole solar spectrum through the change in its Indium composition. The choice of the main structure of the InGaN solar cell is however crucial. Obtaining a high efficiency requires to improve the light absorption and the photogenerated carriers collection that depend on the layers parameters, including the Indium composition, p-and n-doping, device geometry.. . Unfortunately, one of the main drawbacks of InGaN is linked to its p-type doping, which is very difficult to realize since it involves complex technological processes that are difficult to master and that highly impact the layer quality. In this paper, the InGaN p-n junction (PN) and p-in junction (PIN) based solar cells are numerically studied using the most realistic models, and optimized through mathematically rigorous multivariate optimization approaches. This analysis evidences optimal efficiencies of 17.8% and 19.0% for the PN and PIN structures. It also leads to propose, analyze and optimize player free InGaN Schottky-Based Solar Cells (SBSC): the Schottky structure and a new MIN structure for which the optimal efficiencies are shown to be a little higher than for the conventional structures: respectively 18.2% and 19.8%. The tolerance that is allowed on each parameter for each of the proposed cells has been studied. The new MIN structure is shown to exhibit the widest tolerances on the layers thicknesses and dopings. In addition to its being player free, this is another advantage of the MIN structure since it implies its better reliability. Therefore, these new InGaN SBSC are shown to be alternatives to the conventional structures that allow removing the p-type doping of InGaN while giving photovoltaic (PV) performances at least comparable to the standard multilayers PN or PIN structures.

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