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Nicholas Kioussis

Nicholas Kioussis appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

18 published item(s)

preprint2022arXiv

Elasto-Dynamical Induced Spin and Charge Pumping in Bulk Heavy Metals

Analogous to the Spin-Hall Effect (SHE), {\it ab initio} electronic structure calculations reveal that acoustic phonons can induce charge (spin) current flowing along (normal to) its propagation direction. Using Floquet approach we have calculated the elastodynamical-induced charge and spin pumping in bulk Pt and demonstrate that: (i) While the longitudinal charge pumping is an intrinsic observable, the transverse pumped spin-current has an extrinsic origin that depends strongly on the electronic relaxation time; (ii) The longitudinal charge current is of nonrelativstic origin, while the transverse spin current is a relativistic effect that to lowest order scales linearly with the spin-orbit coupling strength; (iii) both charge and spin pumped currents have parabolic dependence on the amplitude of the elastic wave.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Glide Symmetry Protected Higher-Order Topological Insulators from Semimetals with butterfly-like Nodal Lines

Most topological insulators discovered today in spinful systems can be transformed from topological semimetals (TSMs) with vanishing bulk gap via introducing the spin-orbit coupling (SOC), which manifests the intrinsic links between the gapped TI phases and the gapless TSMs. Recently, we have proposed a new family of TSMs in time-reversal invariant {\it spinless} systems, which host butterfly-like nodal-lines (NLs) consisting of a pair of identical concentric intersecting coplanar ellipses (CICE). In this Communication, we unveil the intrinsic link between this exotic class of nodal-line semimetals (NLSMs) and a $\mathbb{Z}_{4}$ = 2 topological crystalline insulator (TCI), by including substantial SOC. We demonstrate that in three space groups ({\it i.e.} $Pbam$ (No.55), $P4/mbm$ (No.127) and $P4_2/mbc$ (No.135)), the TCI supports a fourfold Dirac fermion on the (001) surface protected by two glide symmetries, which originates from the intertwined drumhead surface states of the CICE NLs. The higher order topology is further demonstrated by the emergence of one-dimensional helical hinge states, indicating a new higher order topological insulator protected by a glide symmetry.

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preprint2022arXiv

Spin transfer torque in Mn$_3$Ga-based ferrimagnetic tunnel junctions from first principles

We report on first-principles calculations of spin-transfer torque (STT) in epitaxial magnetic tunnel junctions (MTJs) based on ferrimagnetic tetragonal Mn$_3$Ga electrodes, both as analyzer in an Fe/MgO stack, and also in an analogous stack with a second Mn$_3$Ga electrode (instead of Fe) as polarizer. Solving the ballistic transport problem (NEGF + DFT) for the nonequilibrium spin density in a scattering region extended to over 7.6 nm into the Mn$_3$Ga electrode, we find long-range spatial oscillations of the STT decaying on a length scale of a few tens of angstroms, both in the linear response regime and for finite bias. The oscillatory behavior of the STT in Mn$_3$Ga is robust against variations in the stack geometry and the applied bias voltage, which may affect the phase and the amplitude of the spatial oscillation, but the wave number is only responsive to variations in the longitudinal lattice constant of Mn$_3$Ga (for fixed in-plane geometry) without being commensurate with the lattice. Our interpretation of the long-range STT oscillations is based on the bulk electronic structure of Mn$_3$Ga, taking also into account the spin-filtering properties of the MgO barrier. Comparison to a fully Mn$_3$Ga-based stack shows similar STT oscillations, but a significant enhancement of both the TMR effect at the Fermi level and the STT at the interface, due to resonant tunneling for the mirror-symmetric junction with thinner barrier (three monoatomic layers). From the calculated energy dependence of the spin-polarized transmissions at 0 V, we anticipate asymmetric or symmetric TMR as a function of the applied bias voltage for the Fe-based and the all-Mn$_3$Ga stacks, respectively, which also both exhibit a sign change below 1 V. In the latter (symmetric) case we expect a TMR peak at zero, which is larger for the thinner barriers because of a spin-polarized resonant tunneling contribution.

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preprint2021arXiv

First Principles Calculation of Dzyaloshinskii-Moriya Interaction: A Green's function Approach

We present a Greens function approach to calculate the Dzyaloshinskii-Moriya interactions (DMI) from first principles electronic structure calculations, that is computationally more efficient and accurate than the most-commonly employed supercell and generalized Bloch-based approaches. The method is applied to the (111) Co/Pt bilayer where the Co- and/or Pt-thickness dependence of the DMI coefficients are calculated. Overall, the calculated DMI are in relatively good agreement with the corresponding values reported experimentally. Furthermore, we investigate the effect of strain in the DMI tensor elements and show that the isotropic Néel DMI can be significantly modulated by the normal strains, $ε_{xx},ε_{yy}$ and is relatively insensitive to the shear strain, $ε_{xy}$. Moreover, we show that anisotropic strains, $(ε_{xx}-ε_{yy})$ and $ε_{xy}$, result in the emergence of anisotropic Néel- and Bloch-type DMIs, respectively.

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preprint2020arXiv

Magnetoelastic and Magnetostrictive Properties of Co$_2$XAl Heusler Compounds

We present a comprehensive first principles electronic structure study of the magnetoelastic and magnetostrictive properties in the Co-based Co$_2$XAl (X = V, Ti, Cr, Mn, Fe) full Heusler compounds. In addition to the commonly used total energy approach, we employ torque method to calculate the magnetoelastic tensor elements. We show that the torque based methods are in general computationally more efficient, and allow to unveil the atomic- and orbital-contributions to the magnetoelastic constants in an exact manner, as opposed to the conventional approaches based on second order perturbation with respect to the spin-orbit coupling. The magnetostriction constants are in good agreement with available experimental data. The results reveal that the main contribution to the magnetostriction constants, $λ_{100}$ and $λ_{111}$, arises primarily from the strained-induced modulation of the $\langle d_{x^2-y^2}|\hat{L}_z|d_{xy}\rangle$ and $\langle d_{z^2}|\hat{L}_x|d_{yz}\rangle$ spin orbit coupling matrix elements, respectively, of the Co atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Microscopic Origin of Spin-Orbit Torque in Ferromagnetic Heterostructures: A First Principles Approach

We present an {\it ab initio}-based theoretical framework which elucidates the origin of the spin-orbit torque (SOT) in Normal-Metal(NM)/Ferromagnet(FM) heterostructures. The SOT is decomposed into two contributions, namely, {\it spin-Hall} and the {\it spin-orbital} components. We find that {\it (i)} the Field-Like (FL) SOT is dominated by the spin-orbital component and {\it (ii)} both components contribute to the damping-like torque with comparable magnitude in the limit of thick Pt film. The contribution of the spin-orbital component to the DL-SOT is present only for NMs with strong SOC coupling strength. We demonstrate that the FL-SOT can be expressed in terms of the non-equilibrium spin-resolved orbital moment accumulation. The calculations reveal that the experimentally reported oxygen-induced sign-reversal of the FL-SOT in Pt/Co bilayers is due to the significant reduction of the majority-spin orbital moment accumulation on the interfacial NM atoms.

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preprint2020arXiv

Noncollinear Magnetic Modulation of Weyl Nodes in Ferrimagnetic Mn$_3$Ga

The tetragonal ferrimagnetic Mn$_3$Ga exhibits a wide range of intriguing magnetic properties. Here, we report the emergence of topologically nontrivial nodal lines in the absence of spin orbit coupling (SOC) which are protected by both mirror and $C_{4z}$ rotational symmetries. In the presence of SOC we demonstrate that the doubly degenerate nontrivial crossing points evolve into $C_{4z}$-protected Weyl nodes with chiral charge of $\pm$2. Furthermore, we have considered the experimentally reported noncollinear ferrimagnetic structure, where the magnetic moment of the Mn$_I$ atom (on the Mn-Ga plane) is tilted by an angle $θ$ with respect to the crystallographic $c$ axis. The evolution of the Weyl nodes with $θ$ reveals that the double Weyl nodes split into a pair of charge-1 Weyl nodes whose separation can be tuned by the magnetic orientation in the noncollinear ferrimagnetic structure.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Stabilized Interfacial Ferromagnetism and Enhanced Magnetoelectric Properties of Ultrathin FeRh Films Capped with Heavy Transition Metal Ta

Thin FeRh film was extensively studied recently, and an emergent substrate- and capping-dependent interfacial ferromagnetism (FM) was widely observed in experiments. However, the voltage modulation of this interfacial ferromagnetism is barely studied, which would have profound applications in antiferromagnetic (AFM) FeRh-based magnetoelectric-random access memory (MeRAM). Using ab initio techniques, we comparatively study the interfacial ferromagnetic properties and magnetoelectric responses of ultrathin FeRh films capped by heavy transition metal Ta. We find that Ta capping reverses the phase stability of ultrathin FeRh film below 1.5 nm and gigantically stabilizes the ferromagnetic phase and interfacial ferromagnetism. Besides, small magnetic moment of 2.2 $μ_B$ for neighboring Fe atoms, regardless of magnetic configurations and film thickness, is induced by Ta capping. Compared with FeRh/MgO bilayers, magnetic anisotropies (in-plane for AFM, perpendicular for FM and interfacial-FM reconstructed trilayers) and magnetoelectric responses of these trilayers are enhanced. Furthermore, the VCMA behavior in FM phase is changed from $\vee$-shaped to linear. These findings demonstrate the manipulation of magnetic ordering of FeRh films with heavy metal capping and electric field and can promote the application of FeRh alloy in magnetic memory and antiferromagnetic spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Termination Dependent Topological Surface States in Nodal Loop Semimetal HfP2

Symmetry plays a major role in all disciplines of physics. Within the field of topological materials there is a great interest in understanding how the mechanics of crystalline and internal symmetries protect crossings between the conduction and valence bands. Additionally, exploring this direction can lead to a deeper understanding on the topological properties of crystals hosting a variety of symmetries. For the first time, we report the experimental observation of topological surface states in the nodal loop semimetal HfP2 using angle resolved photoemission spectroscopy (ARPES) which is supported by our first principles calculations. Our study shows termination dependent surface states in this compound. Our experimental data reveal surface states linked to three unique nodal loops confirmed by theoretical calculation to be topologically non-trivial. This work demonstrates that transition metal dipnictides provide a good platform to study non-trivial topological states protected by nonsymmorphic symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Antidamping spin-orbit torque driven by spin-flip reflection mechanism on the surface of a topological insulator: A time-dependent nonequilibrium Green function approach

Motivated by recent experiments observing spin-orbit torque (SOT) acting on the magnetization $\vec{m}$ of a ferromagnetic (F) overlayer on the surface of a three-dimensional topological insulator (TI), we investigate the origin of the SOT and the magnetization dynamics in such systems. We predict that lateral F/TI bilayers of finite length, sandwiched between two normal metal leads, will generate a large antidamping-like SOT per very low charge current injected parallel to the interface. The large values of antidamping-like SOT are {\it spatially localized} around the transverse edges of the F overlayer. Our analysis is based on adiabatic expansion (to first order in $\partial \vec{m}/\partial t$) of time-dependent nonequilibrium Green functions (NEGFs), describing electrons pushed out of equilibrium both by the applied bias voltage and by the slow variation of a classical degree of freedom [such as $\vec{m}(t)$]. From it we extract formulas for spin torque and charge pumping, which show that they are reciprocal effects to each other, as well as Gilbert damping in the presence of SO coupling. The NEGF-based formula for SOT naturally splits into four components, determined by their behavior (even or odd) under the time and bias voltage reversal. Their complex angular dependence is delineated and employed within Landau-Lifshitz-Gilbert simulations of magnetization dynamics in order to demonstrate capability of the predicted SOT to efficiently switch $\vec{m}$ of a perpendicularly magnetized F overlayer.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ferromagnetic Damping/Anti-damping in a Periodic 2D Helical surface; A Non-Equilibrium Keldysh Green Function Approach

In this paper, we investigate theoretically the spin-orbit torque as well as the Gilbert damping for a two band model of a 2D helical surface state with a Ferromagnetic (FM) exchange coupling. We decompose the density matrix into the Fermi sea and Fermi surface components and obtain their contributions to the electronic transport as well as the spin-orbit torque (SOT). Furthermore, we obtain the expression for the Gilbert damping due to the surface state of a 3D Topological Insulator (TI) and predicted its dependence on the direction of the magnetization precession axis.

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preprint2016arXiv

Revealing the Hidden Structural Phases of FeRh

${\it Ab}$ ${\it initio}$ electronic structure calculations reveal that tetragonal distortion has a dramatic effect on the relative stability of the various magnetic structures (C-, A-, G-, A$'$-AFM, and FM) of FeRh giving rise to a wide range of novel stable/metastable structures and magnetic phase transitions between these states. We predict that the ${\it cubic}$ G-AFM structure, which was believed thus far to be the ground state, is metastable and that the ${\it tetragonally}$ expanded G-AFM is the stable structure. The low energy barrier separating these states suggests phase coexistence at room temperature. We propose a novel A$'$-AFM phase to be the ${\it global}$ ground state among all magnetic phases which arises from the strain-induced tuning of the exchange interactions. The results elucidate the underlying mechanism for the recent experimental findings of electric-field control of magnetic phase transition driven via tetragonal strain. The novel magnetic phase transitions open interesting prospects for exploiting strain engineering for the next-generation memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

GdN thin-film: Chern Insulating State on Square Lattice

Using first-principles calculations, we predict a Chern insulating phase in thin films of the ferromagnetic semi-metal GdN. In contrast to previously proposed Chern insulator candidates, which mostly rely on honeycomb lattices, this system affords a great chance to realize the quantum anomalous Hall Effect on a square lattice without either a magnetic substrate or transition metal doping, making synthesis easier. The band inversion between 5d-orbitals of Gd and 2p-orbitals of N is verified by first-principles calculation based on density functional theory, and the band gap can be as large as 100 meV within GdN trilayer. With further increase of film thickness, the band gap tends to close and the metallic bulk property becomes obvious.

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preprint2015arXiv

Two dimensional topological insulators with tunable band gaps: HgTe and HgSe monolayers

Employing ab initio electronic calculations, we propose a new type of two-dimensional (2D) topological insulator (TI), monolayer (ML) low buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gaps. Monolayer LB HgTe undergoes a transition to a topological nontrivial phase under the appropriate in-plane tensile strain (ε > 2.6%) due to the combination effects of strain and spin orbital coupling (SOC). Under the 2.6%< ε <4.2% tensile strain, the band inversion and topological nontrivial gap are induced by the SOC. For ε >4.2%, the band inversion is already realized by strain but the topological gap is induced by SOC. The band gap of monolayer LB HgTe TI phase can be tuned over a wide range from 0 eV to 0.20 eV as the tensile strain increases from 2.6% to 7.4%. Similarly, the topological phase transition of monolayer LB HgSe is induced by strain and SOC as the strain ε >3.1%. The topological band gap can be 0.05 eV as the strain increases to about 4.6%. The large band gap of 2D LB HgTe and HgSe monolayers make this type of material suitable for practical applications at room-temperature.

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preprint2013arXiv

Strain-induced topological insulator phase transition in HgSe

Using ab initio electronic structure calculations we investigate the change of the band structure and the nu_0 topological invariant in HgSe (non-centrosymmetric system) under two different type of uniaxial strain along the [001] and [110] directions, respectively. Both compressive [001] and [110] strain leads to the opening of a (crystal field) band gap (with a maximum value of about 37 meV) in the vicinity of Gamma, and the concomitant formation of a camel-back- (inverse camel-back-) shape valence (conduction) band along the direction perpendicular to the strain with a minimum (maximum) at Gamma. We find that the Z_2 invariant nu_0=1, which demonstrates conclusively that HgSe is a strong topological insulator (TI). With further increase of the strain the band gap decreases vanishing at a critical strain value (which depends on the strain type) where HgSe undergoes a transition from a strong TI to a trivial (normal) insulator. HgSe exhibits a similar behavior under a tensile [110] uniaxial strain. On the other hand, HgSe remains a normal insulator by applying a [001] tensile uniaxial strain. Complementary electronic structure calculations of the non-polar (110) surface under compressive [110] tensile strain show two Dirac cones at the Gamma point whose spin chiral states are associated with the top and bottom slab surfaces.

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preprint2012arXiv

Aviram-Ratner rectifying mechanism for DNA base pair sequencing through graphene nanogaps

We demonstrate that biological molecules such as Watson-Crick DNA base pairs can behave as biological Aviram-Ratner electrical rectifiers because of the spatial separation and weak hydrogen bonding between the nucleobases. We have performed a parallel computational implementation of the ab-initio non-equilibrium Green's function (NEGF) theory to determine the electrical response of graphene---base-pair---graphene junctions. The results show an asymmetric (rectifying) current-voltage response for the Cytosine-Guanine base pair adsorbed on a graphene nanogap. In sharp contrast we find a symmetric response for the Thymine-Adenine case. We propose applying the asymmetry of the current-voltage response as a sensing criterion to the technological challenge of rapid DNA sequencing via graphene nanogaps.

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preprint2011arXiv

Approaching the Intrinsic Bandgap in Suspended High-Mobility Graphene Nanoribbons

We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon(GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic band gap. The experimentally derived bandgap is in quantitative agreement with the results of our electronic-structure calculations on chiral GNRs with comparable width taking into account the electron-electron interactions, indicating that the origin of the bandgap in non-armchair GNRs is partially due to the magnetic zigzag edges.

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preprint2011arXiv

Room-Temperature High On/Off Ratio in Suspended Graphene Nanoribbon Field Effect Transistors

We have fabricated suspended few layer (1-3 layers) graphene nanoribbon field effect transistors from unzipped multiwall carbon nanotubes. Electrical transport measurements show that current-annealing effectively removes the impurities on the suspended graphene nanoribbons, uncovering the intrinsic ambipolar transfer characteristic of graphene. Further increasing the annealing current creates a narrow constriction in the ribbon, leading to the formation of a large band-gap and subsequent high on/off ratio (which can exceed 104). Such fabricated devices are thermally and mechanically stable: repeated thermal cycling has little effect on their electrical properties. This work shows for the first time that ambipolar field effect characteristics and high on/off ratios at room temperature can be achieved in relatively wide graphene nanoribbon (15 nm ~50 nm) by controlled current annealing.

0 citations0 reviewsNo code linkedOpen access