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Luis A. Agapito

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Published work

9 published item(s)

preprint2016arXiv

Accurate $ab~initio$ tight-binding Hamiltonians: effective tools for electronic transport and optical spectroscopy from first principles

The calculations of electronic transport coefficients and optical properties require a very dense interpolation of the electronic band structure in reciprocal space that is computationally expensive and may have issues with band crossing and degeneracies. Capitalizing on a recently developed pseudo-atomic orbital projection technique, we exploit the exact tight-binding representation of the first principles electronic structure for the purposes of (1) providing an efficient strategy to explore the full band structure $E_n({\bf k})$, (2) computing the momentum operator differentiating directly the Hamiltonian, and (3) calculating the imaginary part of the dielectric function. This enables us to determine the Boltzmann transport coefficients and the optical properties within the independent particle approximation. In addition, the local nature of the tight-binding representation facilitates the calculation of the ballistic transport within the Landauer theory for systems with hundreds of atoms. In order to validate our approach we study the multi-valley band structure of CoSb$_3$ and a large core-shell nanowire using the ACBN0 functional. In CoSb$_3$ we point the many band minima contributing to the electronic transport that enhance the thermoelectric properties; for the core-shell nanowire we identify possible mechanisms for photo-current generation and justify the presence of protected transport channels in the wire.

preprint2015arXiv

Accurate tight-binding Hamiltonian matrices from ab-initio calculations: Minimal basis sets

Projection of Bloch states obtained from quantum-mechanical calculations onto atomic orbitals is the fastest scheme to construct ab-initio tight-binding Hamiltonian matrices. However, the presence of spurious states and unphysical hybridizations of the tight-binding eigenstates has hindered the applicability of this construction. Here we demonstrate that those spurious effects are due to the inclusion of Bloch states with low projectability. The mechanism for the formation of those effects is derived analytically. We present an improved scheme for the removal of the spurious states which results in an efficient scheme for the construction of highly accurate ab-initio tight-binding Hamiltonians.

preprint2015arXiv

Improved predictions of the physical properties of Zn- and Cd-based wide band-gap semiconductors: a validation of the ACBN0 functional

We study the physical properties of Zn$X$ ($X$=O, S, Se, Te) and Cd$X$ ($X$=O, S, Se, Te) in the zinc-blende, rock-salt, and wurtzite structures using the recently developed fully $ab$ $initio$ pseudo-hybrid Hubbard density functional ACBN0. We find that both the electronic and vibrational properties of these wide-band gap semiconductors are systematically improved over the PBE values and reproduce closely the experimental measurements. Similar accuracy is found for the structural parameters, especially the bulk modulus. ACBN0 results compare well with hybrid functional calculations at a fraction of the computational cost.

preprint2014arXiv

Reformulation of DFT+U as a pseudo-hybrid Hubbard density functional

The accurate prediction of the electronic properties of materials at a low computational expense is a necessary conditions for the development of effective high-throughput quantum-mechanics (HTQM) frameworks for accelerated materials discovery. HTQM infrastructures rely on the predictive capability of Density Functional Theory (DFT), the method of choice for the first principles study of materials properties. However, DFT suffers of approximations that result in a somewhat inaccurate description of the electronic band structure of semiconductors and insulators. In this article we introduce ACBN0, a pseudo-hybrid Hubbard density functional that yields an improved prediction of the band structure of insulators such as transition-metal oxides, as shown for TiO2, MnO, NiO and ZnO, with only a negligible increase in computational cost.

preprint2013arXiv

Effective and accurate representation of extended Bloch states on finite Hilbert spaces

We present a straightforward, noniterative projection scheme that can represent the electronic ground state of a periodic system on a finite atomic-orbital-like basis, up to a predictable number of electronic states and with controllable accuracy. By co-filtering the projections of plane-wave Bloch states with high-kinetic-energy components, the richness of the finite space and thus the number of exactly-reproduced bands can be selectively increased at a negligible computational cost, an essential requirement for the design of efficient algorithms for electronic structure simulations of realistic material systems and massive high-throughput investigations.

preprint2013arXiv

Strain-induced topological insulator phase transition in HgSe

Using ab initio electronic structure calculations we investigate the change of the band structure and the nu_0 topological invariant in HgSe (non-centrosymmetric system) under two different type of uniaxial strain along the [001] and [110] directions, respectively. Both compressive [001] and [110] strain leads to the opening of a (crystal field) band gap (with a maximum value of about 37 meV) in the vicinity of Gamma, and the concomitant formation of a camel-back- (inverse camel-back-) shape valence (conduction) band along the direction perpendicular to the strain with a minimum (maximum) at Gamma. We find that the Z_2 invariant nu_0=1, which demonstrates conclusively that HgSe is a strong topological insulator (TI). With further increase of the strain the band gap decreases vanishing at a critical strain value (which depends on the strain type) where HgSe undergoes a transition from a strong TI to a trivial (normal) insulator. HgSe exhibits a similar behavior under a tensile [110] uniaxial strain. On the other hand, HgSe remains a normal insulator by applying a [001] tensile uniaxial strain. Complementary electronic structure calculations of the non-polar (110) surface under compressive [110] tensile strain show two Dirac cones at the Gamma point whose spin chiral states are associated with the top and bottom slab surfaces.

preprint2012arXiv

Aviram-Ratner rectifying mechanism for DNA base pair sequencing through graphene nanogaps

We demonstrate that biological molecules such as Watson-Crick DNA base pairs can behave as biological Aviram-Ratner electrical rectifiers because of the spatial separation and weak hydrogen bonding between the nucleobases. We have performed a parallel computational implementation of the ab-initio non-equilibrium Green's function (NEGF) theory to determine the electrical response of graphene---base-pair---graphene junctions. The results show an asymmetric (rectifying) current-voltage response for the Cytosine-Guanine base pair adsorbed on a graphene nanogap. In sharp contrast we find a symmetric response for the Thymine-Adenine case. We propose applying the asymmetry of the current-voltage response as a sensing criterion to the technological challenge of rapid DNA sequencing via graphene nanogaps.

preprint2011arXiv

Approaching the Intrinsic Bandgap in Suspended High-Mobility Graphene Nanoribbons

We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon(GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic band gap. The experimentally derived bandgap is in quantitative agreement with the results of our electronic-structure calculations on chiral GNRs with comparable width taking into account the electron-electron interactions, indicating that the origin of the bandgap in non-armchair GNRs is partially due to the magnetic zigzag edges.

preprint2011arXiv

Room-Temperature High On/Off Ratio in Suspended Graphene Nanoribbon Field Effect Transistors

We have fabricated suspended few layer (1-3 layers) graphene nanoribbon field effect transistors from unzipped multiwall carbon nanotubes. Electrical transport measurements show that current-annealing effectively removes the impurities on the suspended graphene nanoribbons, uncovering the intrinsic ambipolar transfer characteristic of graphene. Further increasing the annealing current creates a narrow constriction in the ribbon, leading to the formation of a large band-gap and subsequent high on/off ratio (which can exceed 104). Such fabricated devices are thermally and mechanically stable: repeated thermal cycling has little effect on their electrical properties. This work shows for the first time that ambipolar field effect characteristics and high on/off ratios at room temperature can be achieved in relatively wide graphene nanoribbon (15 nm ~50 nm) by controlled current annealing.