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Cheng-Yi Huang

Cheng-Yi Huang contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2023arXiv

Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals

Large intrinsic anomalous Hall effect (AHE) due to the Berry curvature in magnetic topological semimetals is attracting enormous interest due to its fundamental importance and technological relevance. Mechanisms resulting in large intrinsic AHE include diverging Berry curvature in Weyl semimetals, anticrossing nodal rings or points of non-trivial bands, and noncollinear spin structures. Here we show that a half-topological semimetal (HTS) state near a topological critical point can provide a new mechanism for driving an exceptionally large AHE. We reveal this through a systematic experimental and theoretical study of the antiferromagnetic (AFM) half-Heusler compound TbPdBi. We not only observed an unusual AHE with a surprisingly large anomalous Hall angle ΘH (tan ΘH ~ 2, the largest among the antiferromagnets) in its field-driven ferromagnetic (FM) phase, but also found a distinct Hall resistivity peak in the canted AFM phase within a low field range, where its isothermal magnetization is nearly linearly dependent on the field. Moreover, we observed a nearly isotropic, giant negative magnetoresistance with a magnitude of ~98%. Our in-depth theoretical modelling demonstrates that these exotic transport properties originate from the HTS state. A minimal Berry curvature cancellation between the trivial spin-up and nontrivial spin-down bands results not only in an extremely large AHE, but it also enhances the spin polarization of the spin-down bands substantially and thus leads to a giant negative magnetoresistance. Our study advances the understanding of the interplay between band topology and magnetism and offers new clues for materials design for spintronics and other applications.

preprint2022arXiv

Glide Symmetry Protected Higher-Order Topological Insulators from Semimetals with butterfly-like Nodal Lines

Most topological insulators discovered today in spinful systems can be transformed from topological semimetals (TSMs) with vanishing bulk gap via introducing the spin-orbit coupling (SOC), which manifests the intrinsic links between the gapped TI phases and the gapless TSMs. Recently, we have proposed a new family of TSMs in time-reversal invariant {\it spinless} systems, which host butterfly-like nodal-lines (NLs) consisting of a pair of identical concentric intersecting coplanar ellipses (CICE). In this Communication, we unveil the intrinsic link between this exotic class of nodal-line semimetals (NLSMs) and a $\mathbb{Z}_{4}$ = 2 topological crystalline insulator (TCI), by including substantial SOC. We demonstrate that in three space groups ({\it i.e.} $Pbam$ (No.55), $P4/mbm$ (No.127) and $P4_2/mbc$ (No.135)), the TCI supports a fourfold Dirac fermion on the (001) surface protected by two glide symmetries, which originates from the intertwined drumhead surface states of the CICE NLs. The higher order topology is further demonstrated by the emergence of one-dimensional helical hinge states, indicating a new higher order topological insulator protected by a glide symmetry.

preprint2022arXiv

Magnetically tunable Dirac and Weyl fermions in the Zintl materials family

Recent classification efforts encompassing crystalline symmetries have revealed rich possibilities for solid-state systems to support a tapestry of exotic topological states. However, finding materials that realize such states remains a daunting challenge. Here we show how the interplay of topology, symmetry, and magnetism combined with doping and external electric and magnetic field controls can be used to drive the previously unreported SrIn$_2$As$_2$ materials family into a variety of topological phases. Our first-principles calculations and symmetry analysis reveal that SrIn$_2$As$_2$ is a dual topological insulator with $Z_2=(1;000)$ and mirror Chern number $C_M= -1$. Its isostructural and isovalent antiferromagnetic cousin EuIn$_2$As$_2$ is found to be an axion insulator with $Z_4= 2$. The broken time-reversal symmetry via Eu doping in Sr$_{1-x}$Eu$_x$In$_2$As$_2$ results in a higher-order or topological crystalline insulator state depending on the orientation of the magnetic easy axis. We also find that antiferromagnetic EuIn$_2$P$_2$ is a trivial insulator with $Z_4= 0$, and that it undergoes a magnetic field-driven transition to an ideal Weyl fermion or nodal fermion state with $Z_4= 1$ with applied magnetic field. Our study identifies Sr$_{1-x}$Eu$_x$In$_2$(As, P)$_2$ as a new tunable materials platform for investigating the physics and applications of Weyl and nodal fermions in the scaffolding of crystalline and axion insulator states.

preprint2022arXiv

p x n-Type Transverse Thermoelectrics in a Type-II Weyl Semimetal TaIrTe4

p x n-type materials refer to materials with a p-type Seebeck coefficient in one direction and a n-type coefficient in the orthogonal direction. This type of materials allows for a transverse thermoelectric response, which is highly desirable for energy applications. Here, we report the observation of p x n-type behavior in TaIrTe4, a type-II Weyl semimetal, with an in-plane thermopower anisotropy S$_{xx}$-S$_{yy}$ reaches a maximum value 40$μ$V/K at 200K. Intriguingly. we found that such a p x n-type behavior is absent in the similar compound NbIrTe4. The presence and absence of p x n-type behavior in these two materials are consistent with density functional theory calculations, which further predict that the thermopower anisotropy in both compounds can be enhanced up to 130$μ$V/K by electron doping. Such a strong thermopower anisotropy originates from the presence of both p-type and n-type carriers, each with high mobility in one direction. These results suggest that although type-II Weyl semimetal phase does not guarantee the existence of p x n-type behavior, its unique band structure provides the ingredient to engineer and optimize this phenomenon.

preprint2022arXiv

Unconventional Resistivity Scaling in Topological Semimetal CoSi

Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may highly impact the semiconductor industry. Here we study the resistivity scaling of a representative topological semimetal CoSi using realistic band structures and Green's function methods. We show that there exists a critical thickness d_c dividing different scaling trends. Above d_c, when the defect density is low such that surface conduction dominates, resistivity reduces with decreasing thickness; when the defect density is high such that bulk conduction dominates, resistivity increases in as conventional metals. Below d_c, the persistent remnants of the surface states give rise to decreasing resistivity down to the ultrathin limit, unlike in topological insulators. The observed CoSi scaling can apply to broad classes of topological semimetals, providing guidelines for materials screening and engineering. Our study shows that topological semimetals bear the potential of overcoming the resistivity scaling challenges in back-end-of-line interconnect applications.

preprint2020arXiv

Exceptionally large anomalous Hall effect due to anticrossing of spin-split bands in the antiferromagnetic half-Heusler compound TbPtBi

We have investigated magnetotransport properties and the topological electronic structure of the half-Heusler compound TbPtBi. Our experiments reveal an exceptionally large anomalous Hall effect (AHE) in the canted antiferromagnetic state of TbPtBi with the anomalous Hall angle (AHA) reaching ~0.68-0.76, which is a few times larger than the previously reported record in GdPtBi. First-principles electronic structure and the associated anomalous Hall conductivity were computed in order to interpret the experimental results. Our analysis shows that the AHE in TbPtBi does not originate from the Weyl points but that it is driven by the large net Berry curvature produced by the anticrossing of spin-split bands near the Fermi level in TbPtBi.

preprint2020arXiv

Noncollinear Magnetic Modulation of Weyl Nodes in Ferrimagnetic Mn$_3$Ga

The tetragonal ferrimagnetic Mn$_3$Ga exhibits a wide range of intriguing magnetic properties. Here, we report the emergence of topologically nontrivial nodal lines in the absence of spin orbit coupling (SOC) which are protected by both mirror and $C_{4z}$ rotational symmetries. In the presence of SOC we demonstrate that the doubly degenerate nontrivial crossing points evolve into $C_{4z}$-protected Weyl nodes with chiral charge of $\pm$2. Furthermore, we have considered the experimentally reported noncollinear ferrimagnetic structure, where the magnetic moment of the Mn$_I$ atom (on the Mn-Ga plane) is tilted by an angle $θ$ with respect to the crystallographic $c$ axis. The evolution of the Weyl nodes with $θ$ reveals that the double Weyl nodes split into a pair of charge-1 Weyl nodes whose separation can be tuned by the magnetic orientation in the noncollinear ferrimagnetic structure.

preprint2019arXiv

Termination Dependent Topological Surface States in Nodal Loop Semimetal HfP2

Symmetry plays a major role in all disciplines of physics. Within the field of topological materials there is a great interest in understanding how the mechanics of crystalline and internal symmetries protect crossings between the conduction and valence bands. Additionally, exploring this direction can lead to a deeper understanding on the topological properties of crystals hosting a variety of symmetries. For the first time, we report the experimental observation of topological surface states in the nodal loop semimetal HfP2 using angle resolved photoemission spectroscopy (ARPES) which is supported by our first principles calculations. Our study shows termination dependent surface states in this compound. Our experimental data reveal surface states linked to three unique nodal loops confirmed by theoretical calculation to be topologically non-trivial. This work demonstrates that transition metal dipnictides provide a good platform to study non-trivial topological states protected by nonsymmorphic symmetry.

preprint2019arXiv

Transition from Intrinsic to Extrinsic Anomalous Hall Effect in the Ferromagnetic Weyl Semimetal PrAlGe$_{1-x}$Si$_x$

Recent reports of a large anomalous Hall effect (AHE) in ferromagnetic Weyl semimetals (FM WSM) have led to a resurgence of interest in this enigmatic phenomenon. However, due to a lack of tunable materials, the interplay between the intrinsic mechanism caused by Berry curvature and extrinsic mechanisms due to scattering remains unclear in FM WSMs. In this contribution, we present a thorough investigation of both the extrinsic and intrinsic AHE in a new family of FM WSMs, PrAlGe$_{1-x}$Si$_x$, where $x$ can be tuned continuously. From DFT calculations, we show that the two end members, PrAlGe and PrAlSi, have different Fermi surfaces but similar Weyl node structures. Experimentally, we observe moderate changes in the anomalous Hall coefficient ($R_S$) but significant changes in the ordinary Hall coefficient ($R_0$) in PrAlGe$_{1-x}$Si$_x$ as a function of $x$, confirming a change of Fermi surface. By comparing the magnitude of $R_0$ and $R_S$, we identify two regimes; $|R_0|<|R_S|$ when $x\le0.5$ and $|R_0|>|R_S|$ when $x>0.5$. Through a detailed scaling analysis, we discover a universal anomalous Hall conductivity (AHC) from intrinsic contribution when $x\le0.5$. Such universal AHC is absent when $x>0.5$. Thus, we point out the significance of the extrinsic mechanisms in FM WSMs and report the first observation of a transition from intrinsic to extrinsic AHE in PrAlGe$_{1-x}$Si$_x$.