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Neil D. Drummond

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cond-mat.mes-hall physics.comp-ph cond-mat.mtrl-sci cond-mat.quant-gas physics.atm-clus quant-ph

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preprint2026arXiv

Quantum Monte Carlo study of low-dimensional Fermi fluids of dipolar atoms

Fermionic cold atoms in optical traps provide viable quantum simulators of correlation effects in electronic systems. For dressed Rydberg atoms in two-dimensional traps with out-of-plane dipole moments, a realistic model of the pairwise interaction is of repulsive dipolar $1/r^3$ form at long range, softened to a constant at short range. This study provides parameterizations of fixed-node diffusion Monte Carlo energy data for ferromagnetic (one-component) and paramagnetic (two-component) two-dimensional homogeneous Fermi fluids of interacting dipolar atoms. We find itinerant ferromagnetism to be unstable within our parameter spaces for dipolar interactions both with and without softening. Our parameterization of the energy as a function of density will enable density functional theory to support experimental studies of inhomogeneous fermionic cold atom systems.

preprint2015arXiv

Fast relaxation of photo-excited carriers in 2D transition metal dichalcogenides

We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides (TMDCs), which is mediated by the emission of longitudinal optical (LO) phonons. By evaluating Born effective charges for ${\rm MoS_2, MoSe_2,WS_2}$, and ${\rm WSe_2}$, we find that, due to the polar coupling of electrons with LO phonons, the relaxation times for hot electrons and holes are of the order of a few ps.

preprint2015arXiv

k.p theory for two-dimensional transition metal dichalcogenide semiconductors

We present $\mathbf{k}\cdotp\mathbf{p}$ Hamiltonians parametrised by {\it ab initio} density functional theory calculations to describe the dispersion of the valence and conduction bands at their extrema (the $K$, $Q$, $Γ$, and $M$ points of the hexagonal Brillouin zone) in atomic crystals of semiconducting monolayer transition metal dichalcogenides. We review the parametrisation of the essential parts of the $\mathbf{k}\cdotp\mathbf{p}$ Hamiltonians for MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, including the spin-splitting and spin-polarisation of the bands, and we discuss the vibrational properties of these materials. We then use $\mathbf{k}\cdotp\mathbf{p}$ theory to analyse optical transitions in two-dimensional transition metal dichalcogenides over a broad spectral range that covers the Van Hove singularities in the band structure (the $M$ points). We also discuss the visualisation of scanning tunnelling microscopy maps.

preprint2014arXiv

Anomalous non-additive dispersion interactions in systems of three one-dimensional wires

The non-additive dispersion contribution to the binding energy of three one-dimensional (1D) wires is investigated using wires modelled by (i) chains of hydrogen atoms and (ii) homogeneous electron gases. We demonstrate that the non-additive dispersion contribution to the binding energy is significantly enhanced compared with that expected from Axilrod-Teller-Muto-type triple-dipole summations and follows a different power-law decay with separation. The triwire non-additive dispersion for 1D electron gases scales according to the power law $d^{-β}$, where $d$ is the wire separation, with exponents $β(r_s)$ smaller than 3 and slightly increasing with $r_s$ from 2.4 at $r_s = 1$ to 2.9 at $r_s=10$, where $r_s$ is the density parameter of the 1D electron gas. This is in good agreement with the exponent $β=3$ suggested by the leading-order charge-flow contribution to the triwire non-additivity, and is a significantly slower decay than the $\sim d^{-7}$ behaviour that would be expected from triple-dipole summations.

preprint2014arXiv

Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides

We derive an effective Hamiltonian which describes the dynamics of electrons in the conduction band of transition metal dichalcogenides (TMDC) in the presence of perpendicular electric and magnetic fields. We discuss in detail both the intrinsic and the Bychkov-Rashba spin-orbit coupling (SOC) induced by an external electric field. We point out interesting differences in the spin-split conduction band between different TMDC compounds. An important consequence of the strong intrinsic SOC is an effective out-of-plane $g$-factor for the electrons which differs from the free-electron g-factor $g\simeq 2$. We identify a new term in the Hamiltonian of the Bychkov-Rashba SOC which does not exist in III-V semiconductors. Using first-principles calculations, we give estimates of the various parameters appearing in the theory. Finally, we consider quantum dots (QDs) formed in TMDC materials and derive an effective Hamiltonian which allows us to calculate the magnetic field dependence of the bound states in the QDs. We find that all states are both valley and spin split, which suggests that these QDs could be used as valley-spin filters. We explore the possibility of using spin and valley states in TMDCs as quantum bits, and conclude that, due to the relatively strong intrinsic spin-orbit splitting in the conduction band, the most realistic option appears to be a combined spin-valley (Kramers) qubit at low magnetic fields.

preprint2013arXiv

Monolayer MoS2: trigonal warping, "Γ-valley", and spin-orbit coupling effects

We use a combined ab-initio calculations and k.p theory based approach to derive a low-energy effective Hamiltonian for monolayer MoS2 at the K point of the Brillouin zone. It captures the features which are present in first-principles calculations but not explained by the theory of Xiao et al. [Phys Rev Lett 108, 196802 (2012)], namely the trigonal warping of the valence and conduction bands, the electron-hole symmetry breaking, and the spin-splitting of the conduction band. We also consider other points in the Brillouin zone which might be important for transport properties. Our findings lead to a more quantitative understanding of the properties of this material in the ballistic limit.

preprint2012arXiv

Importance of High Angular-Momentum Channels in Pseudopotentials for Quantum Monte Carlo

Quantum Monte Carlo methods provide in principle an accurate treatment of the many-body problem of the ground and excited states of condensed systems. In practice, however, uncontrolled errors such as those arising from the fixed-node and pseudopotential approximations often limit the quality of results. We show that the accuracy of quantum Monte Carlo calculations is limited by using available pseudopotentials. In particular, it is necessary to include angular momentum channels in the pseudopotential for excited angular momentum states and to choose the local channel appropriately to obtain accurate results. Variational and diffusion Monte Carlo calculations for Zn, O, and Si atoms and ions demonstrate that these issues can affect total energies by up to several eV for common pseudopotentials. Adding higher-angular momentum channels into the pseudopotential description reduces such errors drastically without a significant increase in computational cost.