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Vladimir Fal'ko

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Published work

17 published item(s)

preprint2025arXiv

Classical vs quantum dynamics and the onset of chaos in a macrospin system

We study a periodically driven macrospin system with anisotropic long-range interactions and collective dissipation, described by a Lindblad master equation. In the thermodynamic limit ($N\to\infty$), a mean-field treatment yields classical equations of motion, whose dynamics are characterized via the maximal Lyapunov exponent (MLE). Focusing on the thermodynamic limit, we map out chaotic, quasiperiodic, and periodic phases via bifurcation diagrams, MLEs, and Fourier spectra of evolved observables, identifying classic period-doubling bifurcations and fractal boundaries in the regions of attractors. Finite-size quantum simulations in the Dicke basis reveal that while both quantum and classical systems exhibit diverse dynamical phases, finite-size effects suppress some behaviors present in the thermodynamic limit. The sign of $λ_{\mathrm{max}}$ serves as a key indicator of convergence between quantum and classical dynamics, which agree over timescales up to the Lyapunov time. Analysis of the density matrix shows that convergence occurs only when its nonzero elements are sharply localized. However, the nonconvergence does not imply a fundamental difference between quantum and classical dynamics: in chaotic regimes, although the evolution orbits of quantum and classical systems show significant differences, quantum evolution becomes mixed and diffusively explores the Hilbert space, signaling quantum chaos, which can be confirmed by the delocalized nature of the density matrix.

preprint2022arXiv

Probing two-electron multiplets in bilayer graphene quantum dots

We report on finite bias spectroscopy measurements of the two-electron spectrum in a gate defined bilayer graphene (BLG) quantum dot for varying magnetic fields. The spin and valley degree of freedom in BLG give rise to multiplets of 6 orbital symmetric and 10 orbital anti-symmetric states. We find that orbital symmetric states are lower in energy and separated by $\approx 0.4 - 0.8$ meV from orbital anti-symmetric states. The symmetric multiplet exhibits an additional energy splitting of its 6 states of $\approx 0.15 - 0.5$ meV due to lattice scale interactions. The experimental observations are supported by theoretical calculations, which allow to determine that inter-valley scattering and 'current-current' interaction constants are of the same magnitude in BLG.

preprint2021arXiv

Kondo effect and spin-orbit coupling in graphene quantum dots

The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - remain rare. Here we report the observation of fully screened and underscreened Kondo effects in quantum dots in bilayer graphene. More generally, we introduce a unique platform for studying Kondo physics. In contrast to carbon nanotubes, whose curved surfaces give rise to strong spin-orbit coupling breaking the SU(4) symmetry of the electronic states relevant for the Kondo effect, we study a nominally flat carbon material with small spin-orbit coupling. Moreover, the unusual two-electron triplet ground state in bilayer graphene dots provides a route to exploring the underscreened spin-1 Kondo effect.

preprint2021arXiv

Scattering between minivalleys in a moiré material

A unique feature of the complex band structures of moiré materials is the presence of minivalleys, their hybridization, and scattering between them. Here we investigate magneto-transport oscillations caused by scattering between minivalleys - a phenomenon analogous to magneto-intersubband oscillations - in a twisted double bilayer graphene sample with a twist angle of 1.94°. We study and discuss the potential scattering mechanisms and find an electron-phonon mechanism and valley conserving scattering to be likely. Finally, we discuss the relevance of our findings for different materials and twist angles.

preprint2020arXiv

Quartet states in two-electron quantum dots in bilayer graphene

Trapping electrons in quantum dots and controlling their collective quantum states is crucial for converting semiconductor structures into bits of quantum information processing. Here, we study single- and two-particle states in quantum dots formed in gapped bilayer graphene (BLG), where the electron's valley states appear in pair with their spin quantum number and we analyse spin- and valley-singlet and triplet states for various BLG and dot parameters, as well as two-particle interaction strength and external magnetic field.

preprint2020arXiv

Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts

In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the energy spectrum of a quantum point contact realized by a suitable gate geometry in bilayer graphene. Using finite bias spectroscopy we measure the energy scales arising from the lateral confinement as well as the Zeeman splitting and find a spin g-factor of 2. The valley g-factor can be tuned by a factor of 3 using vertical electric fields, reaching values between 40 and 120. The results are quantitatively explained by a calculation considering topological magnetic moment and its dependence on confinement and the vertical displacement field.

preprint2015arXiv

Fast relaxation of photo-excited carriers in 2D transition metal dichalcogenides

We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides (TMDCs), which is mediated by the emission of longitudinal optical (LO) phonons. By evaluating Born effective charges for ${\rm MoS_2, MoSe_2,WS_2}$, and ${\rm WSe_2}$, we find that, due to the polar coupling of electrons with LO phonons, the relaxation times for hot electrons and holes are of the order of a few ps.

preprint2015arXiv

Influence of impurity spin dynamics on quantum transport in epitaxial graphene

Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is caused at least in part by spinful scatterers. A non-monotonic dependence of effective decoherence rate on $B_{\parallel}$ reveals the intricate role of scatterers' spin dynamics in forming the interference correction to conductivity, an effect that has gone unnoticed in earlier weak localisation studies

preprint2015arXiv

k.p theory for two-dimensional transition metal dichalcogenide semiconductors

We present $\mathbf{k}\cdotp\mathbf{p}$ Hamiltonians parametrised by {\it ab initio} density functional theory calculations to describe the dispersion of the valence and conduction bands at their extrema (the $K$, $Q$, $Γ$, and $M$ points of the hexagonal Brillouin zone) in atomic crystals of semiconducting monolayer transition metal dichalcogenides. We review the parametrisation of the essential parts of the $\mathbf{k}\cdotp\mathbf{p}$ Hamiltonians for MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, including the spin-splitting and spin-polarisation of the bands, and we discuss the vibrational properties of these materials. We then use $\mathbf{k}\cdotp\mathbf{p}$ theory to analyse optical transitions in two-dimensional transition metal dichalcogenides over a broad spectral range that covers the Van Hove singularities in the band structure (the $M$ points). We also discuss the visualisation of scanning tunnelling microscopy maps.

preprint2015arXiv

Three-particle Complexes in Two-Dimensional Semiconductors

We map the three-body problem in two dimensions onto one particle in a three dimensional potential treatable by a purposely-developed boundary-matching-matrix method. We evaluate binding energies of trions $X^{\pm}$, excitons bound by a donor/acceptor charge $X^{D/A}$, and overcharged acceptors/donors in two-dimensional atomic crystals of transition metal dichalcogenides, where interaction between charges features logarithmic behavior at intermediate distances. We find that dissociation energy of $X^{\pm}$ is, typically, much larger than that of localised exciton complexes, so that trions are more resilient to heating, despite that their recombination line in optics is much less red-shifted from the exciton line, as compared to $X^{D/A}$

preprint2015arXiv

Tunable Fermi surface topology and Lifshitz transition in bilayer graphene

Bilayer graphene is a highly tunable material: not only can one tune the Fermi energy using standard gates, as in single-layer graphene, but the band structure can also be modified by external perturbations such as transverse electric fields or strain. We review the theoretical basics of the band structure of bilayer graphene and study the evolution of the band structure under the influence of these two external parameters. We highlight their key role concerning the ease to experimentally probe the presence of a Lifshitz transition, which consists in a change of Fermi contour topology as a function of energy close to the edges of the conduction and valence bands. Using a device geometry that allows the application of exceptionally high displacement fields, we then illustrate in detail the way to probe the topology changes experimentally using quantum Hall effect measurements in a gapped bilayer graphene system.

preprint2011arXiv

Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light

Electronic devices using epitaxial graphene on Silicon Carbide require encapsulation to avoid uncontrolled doping by impurities deposited in ambient conditions. Additionally, interaction of the graphene monolayer with the substrate causes relatively high level of electron doping in this material, which is rather difficult to change by electrostatic gating alone. Here we describe one solution to these problems, allowing both encapsulation and control of the carrier concentration in a wide range. We describe a novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers: a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. Unexposed, the same double layer of polymers works well as capping material, improving the temporal stability and uniformity of the doping level of the sample. By UV exposure of this heterostructure we controlled electrical parameters of graphene in a non-invasive, non-volatile, and reversible way, changing the carrier concentration by a factor of 50. The electronic properties of the exposed SiC/ graphene/polymer heterostructures remained stable over many days at room temperature, but heating the polymers above the glass transition reversed the effect of light. The newly developed photochemical gating has already helped us to improve the robustness (large range of quantizing magnetic field, substantially higher opera- tion temperature and significantly enhanced signal-to-noise ratio due to significantly increased breakdown current) of a graphene resistance standard to such a level that it starts to compete favorably with mature semiconductor heterostructure standards. [2,3]

preprint2009arXiv

Quantum Resistance Standard Based on Epitaxial Graphene

We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics.

preprint2009arXiv

SiC Graphene Suitable For Quantum Hall Resistance Metrology

We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several devices produced on distant parts of a single large-area wafer, we can confirm that material synthesized on the Si-terminated face of SiC promises a suitable platform for the implementations of quantum resistance metrology at elevated temperatures and, in the longer term, opens bright prospects for scalable electronics based on graphene.