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Nathaniel Kinsey

Nathaniel Kinsey appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mtrl-sciphysics.app-ph

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Published work

6 published item(s)

preprint2020arXiv

Absorptive loss and band non-parabolicity as a physical origin of large nonlinearity in epsilon-near-zero materials

For decades, nonlinear optics has been used to control the frequency and propagation of light in unique ways enabling a wide range of applications such as ultrafast lasing, sub-wavelength imaging, and novel sensing methods. Through this, a key thread of research in the field has always been the development of new and improved nonlinear materials to empower these applications. Recently, epsilon-near-zero (ENZ) materials have emerged as a potential platform to enhanced nonlinear interactions, bolstered in large part due to the extreme refractive index tuning (Δn~ 0.1 - 1) of sub-micron thick films that has been demonstrated in literature. Despite this experimental success, the theory has lagged and is needed to guide future experimental efforts. Here, we construct a theoretical framework for the intensity-dependent refractive index of the most popular ENZ materials, heavily doped semiconductors. We demonstrate that the nonlinearity when excited below bandgap, is due to the modification of the effective mass of the electron sea which produces a shift in the plasma frequency. We discuss trends and trade-offs in the optimization of excitation conditions and material choice (such material loss, band structure, and index dispersion), and provide a figure of merit through which the performance of future materials may be evaluated. By illuminating the framework of the nonlinearity, we hope to propel future applications in this growing field.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Adiabatic frequency shifting in epsilon near zero materials: The role of group velocity

We investigate adiabatic frequency conversion using epsilon near zero (ENZ) materials and show that while the maximum frequency conversion for a given change of permittivity does not exhibit increase in the vicinity of ε=0 condition. However, that change can be achieved in a shorter length, and if the pump is also in the ENZ vicinity, at a lower pump intensity. This slow propagation effect makes the conversion efficiency in the ENZ material comparable to that in microresonators and other structured slow light schemes, but unlike the latter no nanofabrication is required for ENZ materials which constitutes their major advantage over alternative frequency conversion approaches.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fast and slow nonlinearities in ENZ materials

Novel materials, with enhanced light-matter interaction capabilities, play an essential role in achieving the lofty goals of nonlinear optics. Recently, Epsilon-Near-Zero (ENZ) media have emerged as a promising candidate to enable the enhancement of several nonlinear processes including refractive index modulation and harmonic generation. Here, we analyze the optical nonlinearity of ENZ media to clarify the commonalities with other nonlinear media and its unique properties. We focus on transparent conducting oxides (TCOs) as the family of ENZ media with near zero permittivity in the near-infrared (telecom) band. We investigate the instantaneous and delayed nonlinearities. By identifying their common origin from the band nonparabolicity, we show that their relative strength is entirely determined by a ratio of the energy and momentum relaxation (or dephasing) times. Using this framework, we compare ENZ materials against the many promising nonlinear media that have been investigated in literature and show that while ENZ materials do not radically outpace the strength of traditional materials in either the fast or slow nonlinearity, they pack key advantages such as an ideal response time, intrinsic slow light enhancement, and broadband nature in a compact platform making them a valuable tool for ultrafast photonics applications for decades to come.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Plasmonic Titanium Nitride via Atomic Layer Deposition: A Low-Temperature Route

To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic layer deposition (PE-ALD). TiN with low losses and high metallicity was achieved at temperatures below 500°C, by exploring the effects of chemisorption time, substrate temperature and plasma exposure time on material properties. Reduction in chemisorption time mitigates premature precursor decomposition at T_S > 375°C , and a trade-off between reduced impurity concentration and structural degradation caused by plasma bombardment is achieved for 25s plasma exposure. 85 nm thick TiN films grown at a substrate temperature of 450°C, compatible with CMOS processes, with 0.5s chemisorption time and 25s plasma exposure exhibited a high plasmonic figure of merit (|ε^'/ε^''|) of 2.8 and resistivity of 31 μΩ-cm. These TiN thin films fabricated with subwavelength apertures were shown to exhibit extraordinary transmission.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effective Third-Order Nonlinearities in Metallic Refractory Titanium Nitride Thin Films

Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with standard semiconductor technology. Here we study the nonlinear optical properties in the novel refractory plasmonic material titanium nitride using the Z scan method at 1550 nm and 780 nm. We compare the extracted nonlinear parameters for TiN with previous works on noble metals and note a similarly large nonlinear optical response. However, TiN films have been shown to exhibit a damage threshold up to an order of magnitude higher than gold films of a similar thickness, while also being robust, cost-efficient, bio- and CMOS compatible. Together, these properties make TiN a promising material for metal-based nonlinear optics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ultra-compact modulators based on novel CMOS-compatible plasmonic materials

We propose several planar layouts of ultra-compact plasmonic waveguide modulators that utilize alternative CMOS-compatible materials. The modulation is efficiently achieved by tuning the carrier concentration in a transparent conducting oxide layer, thereby tuning the waveguide either in plasmonic resonance or off-resonance. Resonance significantly increases the absorption coefficient of the plasmonic waveguide, which enables larger modulation depth. We show that an extinction ratio of 86 dB/um can be achieved, allowing for a 3-dB modulation depth in less than one micron at the telecommunication wavelength. Our multilayer structures can potentially be integrated with existing plasmonic and photonic waveguides as well as novel semiconductor-based hybrid photonic/electronic circuits.

0 citations0 reviewsNo code linkedOpen access