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Source author record

Clayton DeVault

Clayton DeVault appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
physics.opticscond-mat.mtrl-sciphysics.app-ph

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Published work

4 published item(s)

preprint2020arXiv

Adiabatic frequency shifting in epsilon near zero materials: The role of group velocity

We investigate adiabatic frequency conversion using epsilon near zero (ENZ) materials and show that while the maximum frequency conversion for a given change of permittivity does not exhibit increase in the vicinity of ε=0 condition. However, that change can be achieved in a shorter length, and if the pump is also in the ENZ vicinity, at a lower pump intensity. This slow propagation effect makes the conversion efficiency in the ENZ material comparable to that in microresonators and other structured slow light schemes, but unlike the latter no nanofabrication is required for ENZ materials which constitutes their major advantage over alternative frequency conversion approaches.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Extraordinarily Large Permittivity Modulation in Zinc Oxide for Dynamic Nanophotonics

The dielectric permittivity of a material encapsulates the essential physics of light-matter interaction into the material's local response to optical excitation. Dynamic, photo-induced modulation of the permittivity can enable an unprecedented level of control over the phase, amplitude, and polarization of light. Therefore, the detailed dynamic characterization of technology-relevant materials with substantially tunable optical properties and fast response times is a crucial step in the realization of tunable optical devices. This work reports on the extraordinarily large permittivity changes in zinc oxide thin films (up to -3.6 relative change in the real part of the dielectric permittivity at 1600 nm wavelength) induced by optically generated free carriers. We demonstrate broadband reflectance modulation up to 70 percent in metal-backed oxide mirrors at the telecommunication wavelengths, with picosecond-scale relaxation times. The epsilon near zero points of the films can be dynamically shifted from 8.5 microns to 1.6 microns by controlling the pump fluence. Finally, we show that the modulation can be selectively enhanced at specific wavelengths employing metal-backed ZnO disks while maintaining picosecond-scale switching times. This work provides insights into the free-carrier assisted permittivity modulation in zinc oxide and could enable the realization of novel dynamic devices for beam-steering, polarizers, and spatial light modulators.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Low-loss Zero-Index Materials

Materials with a zero refractive index support electromagnetic modes that exhibit stationary phase profiles. While such materials have been realized across the visible and near-infrared spectral range, radiative and dissipative optical losses have hindered their development. We reduce losses in zero-index, on-chip photonic crystals by introducing high-Q resonances via resonance-trapped and symmetry-protected states. Using these approaches, we experimentally obtain quality factors of 2.6*10^3 and 7.8*10^3 at near-infrared wavelengths, corresponding to an order-of-magnitude reduction in propagation loss over previous designs. Our work presents a viable approach to fabricate zero-index on-chip nanophotonic devices with low-loss.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effective Third-Order Nonlinearities in Metallic Refractory Titanium Nitride Thin Films

Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with standard semiconductor technology. Here we study the nonlinear optical properties in the novel refractory plasmonic material titanium nitride using the Z scan method at 1550 nm and 780 nm. We compare the extracted nonlinear parameters for TiN with previous works on noble metals and note a similarly large nonlinear optical response. However, TiN films have been shown to exhibit a damage threshold up to an order of magnitude higher than gold films of a similar thickness, while also being robust, cost-efficient, bio- and CMOS compatible. Together, these properties make TiN a promising material for metal-based nonlinear optics.

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