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Researcher profile

N. Skukan

N. Skukan contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.ins-detcond-mat.mes-hallquant-phphysics.optics

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Published work

11 published item(s)

preprint2016arXiv

Charge collection efficiency mapping of interdigitated 4H-SiC detectors

The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 MeV and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact). These different experimental conditions have been modeled using a two dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent consistency between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization

We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channels depth at their endpoints allows the surface contacting of the channel terminations with no need of further fabrication stages. In the present work we describe the sample masking, which includes the deposition of semi spherical gold contacts on the sample surface, followed by MeV ion implantation. Because of the significant difference between the densities of pristine and amorphous or graphitized diamond, the formation of buried channels has a relevant mechanical effect on the diamond structure, causing localized surface swelling, which has been measured both with interferometric profilometry and atomic force microscopy. The electrical properties of the buried channels are then measured with a two point probe station: clear evidence is given that only the terminal points of the channels are electrically connected with the surface, while the rest of the channels extends below the surface. IV measurements are employed also to qualitatively investigate the electrical properties of the channels as a function of implantation fluence and annealing.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electrical control of deep NV centers in diamond by means of sub-superficial graphitic micro-electrodes

The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in this work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 μm in depth) graphitic micro-electrodes with spacing of 9 μm were created in single-crystal diamond substrates by means of a 6 MeV C scanning micro-beam. The high breakdown field of diamond was exploited to electrically control the variation in the relative population of the negative (NV-) and neutral (NV0) charge states of sub-superficial NV centers located in the inter- electrode gap regions, without incurring into current discharges. Photoluminescence spectra acquired from the biased electrodes exhibited an electrically induced increase up to 40% in the NV- population at the expense of the NV0 charge state. The variation in the relative charge state populations showed a linear dependence from the injected current at applied biases smaller than 250 V, and was interpreted as the result of electron trapping at NV sites, consistently with the Space Charge Limited Current interpretation of the abrupt current increase observed at 300 V bias voltage. In correspondence of such trap-filling-induced transition to a high-current regime, a strong electroluminescent emission from the NV0 centers was observed. In the high-current-injection regime, a decrease in the NV- population was observed, in contrast with the results obtained at lower bias voltages. These results disclose new possibilities in the electrical control of the charge state of NV centers located in the diamond bulk, which are characterized by longer spin coherence times.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Finite element analysis of ion-implanted diamond surface swelling

We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interferometric profilometry in both cases. Simulations are based on a model which accounts for the through-the-thickness variation of mechanical parameters in the material, as a function of ion type, fluence and energy. Surface deformation profiles and internal stress distributions are analyzed and numerical results are seen to adequately fit experimental data. Results allow us to draw conclusions on structural damage mechanisms in diamond for different MeV ion implantations.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes

This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to shallow the damage profile toward the surface. After the irradiation, the sample was annealed at high temperature in order to promote the conversion to the graphitic phase of the end-of-range regions which experienced an ion-induced damage exceeding the damage threshold, while recovering the sub-threshold damaged regions to the highly resistive diamond phase. This process provided conductive graphitic electrodes embedded in the insulating diamond matrix; the presence of the variable-thickness mask made the terminations of the channels emerging at the diamond surface and available to be connected to an external electronic circuit. In order to evaluate the quality of this novel microfabrication procedure based on direct ion writing, we performed frontal Ion Beam Induced Charge (IBIC) measurements by raster scanning focused MeV ion beams onto the diamond surface. Charge collection efficiency (CCE) maps were measured at different bias voltages. The interpretation of such maps was based on the Shockley-Ramo-Gunn formalism.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation

As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (alpha) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

IBIC characterization of an ion-beam-micromachined multi-electrode diamond detector

Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state ionization chamber, a device with interdigitated electrodes was fabricated by using a 1.8 MeV He+ ion microbeam scanning on a homoepitaxial, grown by chemical vapour deposition (CVD). In order to evaluate the ionizing-radiation-detection performance of the device, charge collection efficiency (CCE) maps were extracted from Ion Beam Induced Charge (IBIC) measurements carried out by probing different arrangements of buried microelectrodes. The analysis of the CCE maps allowed for an exhaustive evaluation of the detector features, in particular the individuation of the different role played by electrons and holes in the formation of the induced charge pulses. Finally, a comparison of the performances of the detector with buried graphitic electrodes with those relevant to conventional metallic surface electrodes evidenced the formation of a dead layer overlying the buried electrodes as a result of the fabrication process.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Monte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottky diode

The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse bias voltage. The cross section of the sample orthogonal to the electrodes was irradiated by a rarefied 4 MeV proton microbeam and the charge pulses have been recorded as function of incident proton position with a spatial resolution of 2 um. The CCE profile shows a broad plateau with CCE values close to 100% occurring at the depletion layer, whereas in the neutral region, the exponentially decreasing profile indicates the dominant role played by the diffusion transport mechanism. Mapping of charge pulses was accomplished by a novel computational approach, which consists in mapping the Gunn's weighting potential by solving the electrostatic problem by finite element method and hence evaluating the induced charge at the sensing electrode by a Monte Carlo method. The combination of these two computational methods enabled an exhaustive interpretation of the experimental profiles and allowed an accurate evaluation both of the electrical characteristics of the active region (e.g. electric field profiles) and of basic transport parameters (i. e. diffusion length and minority carrier lifetime).

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electroluminescence from nitrogen-vacancy and interstitial-related centers in bulk diamond stimulated by ion-beam-fabricated sub-superficial graphitic micro-electrodes

We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) characterization evidenced a low radiation damage concentration in the inter-electrode gap region, which did not significantly affect the PL features domi- nated by NV centers. The operation of the device in electroluminescence (EL) regime was investigated by ap- plying a bias voltage at the graphitic electrodes, resulting in the injection of a high excitation current above a threshold voltage (~300V), which effectively stimulated an intense EL emission from NV0 centers. In addition, we report on the new observation of two additional sharp EL emission lines (at 563 nm and 580 nm) related to interstitial defects formed during MeV ion beam fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electrical stimulation of single-photon emission from nitrogen-vacancy centers in diamond with sub-superficial graphitic electrodes

Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk. Their effectiveness has been shown for the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate such fabrication method for the electrical excitation of color centers in diamond. Differently from optically-stimulated light emission from color centers in diamond, electroluminescence (EL) requires a high current flowing in the diamond subgap states between the electrodes. With this purpose, buried graphitic electrode pairs with a spacing of 10 $μ$m were fabricated in the bulk of a single-crystal diamond sample using a 6 MeV C microbeam. The electrical characterization of the structure showed a significant current above an effective voltage threshold of 150V, which was interpreted according to the theory of Space Charge Limited Current. The EL imaging allowed to identify the electroluminescent regions and the residual vacancy distribution associated with the fabrication technique. Measurements evidenced bright electroluminescent emission from native neutrally-charged nitrogen-vacancy centers ($NV^0$); the acquired spectra highlighted the absence of EL associated with radiation damage.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector

In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers transport properties of the device. The resulting charge sharing effects may lead to bipolar currents, pulse height defects and anomalous polarity signals affecting the response of the device to ionizing radiation. This latter effect has recently attracted attention in commonly used detector materials, but different interpretations have been suggested, depending on the material, the geometry of the device and the nature of the ionizing radiation. In this letter, we report on the investigation in the formation of anomalous polarity pulses in a multi-electrode diamond detector with buried graphitic electrodes. In particular, we propose a purely electrostatic model based on the Shockley-Ramo-Gunn theory, providing a satisfactory description of anomalous pulses observed in charge collection efficiency maps measured by means of Ion Beam Induced Charge (IBIC) microscopy, and suitable for a general application in multi-electrode devices and detectors.

0 citations0 reviewsNo code linkedOpen access