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F. Picollo

F. Picollo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.ins-detquant-phBiological Physicscond-mat.mes-hallNeurons and Cognitionphysics.app-ph

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Published work

24 published item(s)

preprint2022arXiv

Nanodiamond quantum sensors reveal temperature variation associated to hippocampal neurons firing

Temperature is one of the most relevant parameters for the regulation of intracellular processes. Measuring localized subcellular temperature gradients is fundamental for a deeper understanding of cell function, such as the genesis of action potentials, and cell metabolism. Here, we detect for the first time temperature variations (1°C) associated with potentiation and depletion of neuronal firing, exploiting a nanoscale thermometer based on optically detected magnetic resonance in nanodiamonds. Our results provide a tool for assessing neuronal spiking activity under physiological and pathological conditions and, conjugated with the high sensitivity of this technique (in perspective sensitive to < 0.1°C variations), pave the way to a systematic study of the generation of localized temperature gradients. Furthermore, they prompt further studies explaining in detail the physiological mechanism originating this effect.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Practical applications of quantum sensing: a simple method to enhance sensitivity of Nitrogen-Vacancy-based temperature sensors

Nitrogen-vacancy centers in diamond allow measurement of environment properties such as temperature, magnetic and electric fields at nanoscale level, of utmost relevance for several research fields, ranging from nanotechnologies to bio-sensing. The working principle is based on the measurement of the resonance frequency shift of a single nitrogen-vacancy center (or an ensemble of them), usually detected by by monitoring the center photoluminescence emission intensity. Albeit several schemes have already been proposed, the search for the simplest and most effective one is of key relevance for real applications. Here we present a new continuous-wave lock-in based technique able to reach unprecedented sensitivity in temperature measurement at micro/nanoscale volumes (4.8 mK/Hz$^{1/2}$ in $μ$m$^3$). Furthermore, the present method has the advantage of being insensitive to the enviromental magnetic noise, that in general introduces a bias in the temperature measurement.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A 3-dimensional interdigitated electrode geometry for the enhancement of charge collection efficiency in diamond detectors

In this work, a single crystal CVD diamond film with a novel three-dimensional (3D) interdigitated electrode geometry has been fabricated with the Reactive Ion Etching (RIE) technique in order to increase the charge collection efficiency (CCE) with respect to that obtained by standard superficial electrodes. The geometrical arrangement of the electric field lines due to the 3D patterning of the electrodes results in a shorter travel path for the excess charge carriers, thus contributing to a more efficient charge collection mech-anism. The CCE of the device was mapped by means of the Ion Beam Induced Charge (IBIC) technique. A 1 MeV proton micro-beam was raster scanned over the active area of the diamond detector under different bias voltage conditions, enabling to probe the charge transport properties of the detector up to a depth of 8 μm below the sample surface. The experimental results, supported by the numerical simulations, show a significant improvement in the 3D-detector performance (i.e. CCE, energy resolution, extension of the active area) if compared with the results obtained by standard surface metallic electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

All-carbon multi-electrode array for real-time in vitro measurements of oxidizable neurotransmitters

We report on the ion beam fabrication of all-carbon multi electrode arrays (MEAs) based on 16 graphitic micro-channels embedded in single-crystal diamond (SCD) substrates. The fabricated SCD-MEAs are systematically employed for the in vitro simultaneous amperometric detection of the secretory activity from populations of chromaffin cells, demonstrating a new sensing approach with respect to standard techniques. The biochemical stability and biocompatibility of the SCD-based device combined with the parallel recording of multi-electrodes array allow: i) a significant time saving in data collection during drug screening and/or pharmacological tests over a large number of cells, ii) the possibility of comparing altered cell functionality among cell populations, and iii) the repeatition of acquisition runs over many cycles with a fully non-toxic and chemically robust bio-sensitive substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Characterization of the recovery of mechanical properties of ion-implanted diamond after thermal annealing

Due to their outstanding mechanical properties, diamond and diamond-like materials find significant technological applications ranging from well-established industrial fields (cutting tools, coatings, etc.) to more advanced mechanical devices as micro- and nano-electromechanical systems. The use of energetic ions is a powerful and versatile tool to fabricate three-dimensional micro-mechanical structures. In this context, it is of paramount importance to have an accurate knowledge of the effects of ion-induced structural damage on the mechanical properties of this material, firstly to predict potential undesired side-effects of the ion implantation process, and possibly to tailor the desired mechanical properties of the fabricated devices. We present an Atomic Force Microscopy (AFM) characterization of free-standing cantilevers in single-crystal diamond obtained by a FIB-assisted lift-off technique, which allows a determination of the Young's modulus of the diamond crystal after the MeV ion irradiation process concurrent to the fabrication of the microstructures, and subsequent thermal annealing. The AFM measurements were performed with the beam-bending technique and show that the thermal annealing process allows for an effective recovery of the mechanical properties of the pristine crystal.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Development and characterization of a diamond-insulated graphitic multi electrode array realized with ion beam lithography

The detection of quantal exocytic events from neurons and neuroendocrine cells is a challenging task in neuroscience. One of the most promising platforms for the development of a new generation of biosensors is diamond, due to its biocompatibility, transparency and chemical inertness. Moreover, the electrical properties of diamond can be turned from a perfect insulator into a conductive material (resistivity Ohm cm) by exploiting the metastable nature of this allotropic form of carbon. A 16 channels MEA (Multi Electrode Array) suitable for cell culture growing has been fabricated by means of ion implantation. A focused 1.2 MeV He+ beam was scanned on a IIa single-crystal diamond sample (4.5x4.5x0.5 mm3) to cause highly damaged sub-superficial structures that were defined with micrometric spatial resolution. After implantation, the sample was annealed. This process provides the conversion of the sub-superficial highly damaged regions to a graphitic phase embedded in a highly insulating diamond matrix. Thanks to a three-dimensional masking technique, the endpoints of the sub-superficial channels emerge in contact with the sample surface, therefore being available as sensing electrodes. Cyclic voltammetry and amperometry measurements of solutions with increasing concentrations of adrenaline were performed to characterize the biosensor sensitivity. The reported results demonstrate that this new type of biosensor is suitable for in vitro detection of catecholamine release.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Direct fabrication and IV characterization of sub-surface conductive channels in diamond with MeV ion implantation

In the present work we report about the investigation of the conduction mechanism of sp2 carbon micro-channels buried in single crystal diamond. The structures are fabricated with a novel technique which employs a MeV focused ion-beam to damage diamond in conjunction with variable thickness masks. This process changes significantly the structural proprieties of the target material, because the ion nuclear energy loss induces carbon conversion from sp3 to sp2 state mainly at the end of range of the ions (few micrometers). Furthermore, placing a mask with increasing thickness on the sample it is possible to modulate the channels depth at their endpoints, allowing their electrical connection with the surface. A single-crystal HPHT diamond sample was implanted with 1.8 MeV He+ ions at room temperature, the implantation fluence was set in the range 2.1x10^16 - 6.3x10^17 ions cm^-2, determining the formation of buried micro-channels at 3 um. After deposition of metallic contacts at the channels' endpoints, the electrical characterization was performed measuring the I-V curves at variable temperatures in the 80-690 K range. The Variable Range Hopping model was used to fit the experimental data in the ohmic regime, allowing the estimation of characteristic parameters such as the density of localized states at the Fermi level. A value of 5.5x10^17 states cm-3 eV-1 was obtained, in satisfactory agreement with values previously reported in literature. The power-law dependence between current and voltage is consistent with the space charge limited mechanism at moderate electric fields.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization

We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channels depth at their endpoints allows the surface contacting of the channel terminations with no need of further fabrication stages. In the present work we describe the sample masking, which includes the deposition of semi spherical gold contacts on the sample surface, followed by MeV ion implantation. Because of the significant difference between the densities of pristine and amorphous or graphitized diamond, the formation of buried channels has a relevant mechanical effect on the diamond structure, causing localized surface swelling, which has been measured both with interferometric profilometry and atomic force microscopy. The electrical properties of the buried channels are then measured with a two point probe station: clear evidence is given that only the terminal points of the channels are electrically connected with the surface, while the rest of the channels extends below the surface. IV measurements are employed also to qualitatively investigate the electrical properties of the channels as a function of implantation fluence and annealing.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Effects of high-power laser irradiation on sub-superficial graphitic layers in single crystal diamond

We report on the structural modifications induced by a lambda = 532 nm ns-pulsed high-power laser on sub-superficial graphitic layers in single-crystal diamond realized by means of MeV ion implantation. A systematic characterization of the structures obtained under different laser irradiation conditions (power density, number of pulses) and subsequent thermal annealing was performed by different electron microscopy techniques. The main feature observed after laser irradiation is the thickening of the pre-existing graphitic layer. Cross sectional SEM imaging was performed to directly measure the thickness of the modified layers, and subsequent selective etching of the buried layers was employed to both assess their graphitic nature and enhance the SEM imaging contrast. In particular, it was found that for optimal irradiation parameters the laser processing induces a six-fold increase the thickness of sub superficial graphitic layers without inducing mechanical failures in the surrounding crystal. TEM microscopy and EELS spectroscopy allowed a detailed analysis of the internal structure of the laser irradiated layers, highlighting the presence of different nano graphitic and amorphous layers. The obtained results demonstrate the effectiveness and versatility of high-power laser irradiation for an accurate tuning of the geometrical and structural features of graphitic structures embedded in single crystal diamond, and open new opportunities in diamond fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Finite element analysis of ion-implanted diamond surface swelling

We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interferometric profilometry in both cases. Simulations are based on a model which accounts for the through-the-thickness variation of mechanical parameters in the material, as a function of ion type, fluence and energy. Surface deformation profiles and internal stress distributions are analyzed and numerical results are seen to adequately fit experimental data. Results allow us to draw conclusions on structural damage mechanisms in diamond for different MeV ion implantations.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes

This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to shallow the damage profile toward the surface. After the irradiation, the sample was annealed at high temperature in order to promote the conversion to the graphitic phase of the end-of-range regions which experienced an ion-induced damage exceeding the damage threshold, while recovering the sub-threshold damaged regions to the highly resistive diamond phase. This process provided conductive graphitic electrodes embedded in the insulating diamond matrix; the presence of the variable-thickness mask made the terminations of the channels emerging at the diamond surface and available to be connected to an external electronic circuit. In order to evaluate the quality of this novel microfabrication procedure based on direct ion writing, we performed frontal Ion Beam Induced Charge (IBIC) measurements by raster scanning focused MeV ion beams onto the diamond surface. Charge collection efficiency (CCE) maps were measured at different bias voltages. The interpretation of such maps was based on the Shockley-Ramo-Gunn formalism.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation

As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (alpha) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

IBIC characterization of an ion-beam-micromachined multi-electrode diamond detector

Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state ionization chamber, a device with interdigitated electrodes was fabricated by using a 1.8 MeV He+ ion microbeam scanning on a homoepitaxial, grown by chemical vapour deposition (CVD). In order to evaluate the ionizing-radiation-detection performance of the device, charge collection efficiency (CCE) maps were extracted from Ion Beam Induced Charge (IBIC) measurements carried out by probing different arrangements of buried microelectrodes. The analysis of the CCE maps allowed for an exhaustive evaluation of the detector features, in particular the individuation of the different role played by electrons and holes in the formation of the induced charge pulses. Finally, a comparison of the performances of the detector with buried graphitic electrodes with those relevant to conventional metallic surface electrodes evidenced the formation of a dead layer overlying the buried electrodes as a result of the fabrication process.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Kelvin probe characterization of buried graphitic microchannels in single-crystal diamond

In this work, we present an investigation by Kelvin Probe Microscopy (KPM) of buried graphitic microchannels fabricated in single-crystal diamond by direct MeV ion microbeam writing. Metal deposition of variable-thickness masks was adopted to implant channels with emerging endpoints and high temperature annealing was performed in order to induce the graphitization of the highly-damaged buried region. When an electrical current was flowing through the biased buried channel, the structure was clearly evidenced by KPM maps of the electrical potential of the surface region overlying the channel at increasing distances from the grounded electrode. The KPM profiling shows regions of opposite contrast located at different distances from the endpoints of the channel. This effect is attributed to the different electrical conduction properties of the surface and of the buried graphitic layer. The model adopted to interpret these KPM maps and profiles proved to be suitable for the electronic characterization of buried conductive channels, providing a non-invasive method to measure the local resistivity with a micrometer resolution. The results demonstrate the potential of the technique as a powerful diagnostic tool to monitor the functionality of all-carbon graphite/diamond devices to be fabricated by MeV ion beam lithography.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Lateral IBIC characterization of single crystal synthetic diamond detectors

In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross sections using a 2 MeV proton microbeam. CCE profiles in the depth direction were extracted from the cross-sectional maps at variable bias voltage. IBIC spectra relevant to the depletion region extending beneath the frontal Schottky electrode show a 100% CCE, with a spectral resolution of about 1.5%. The dependence of the width of the high efficiency region from applied bias voltage allows the constant residual doping concentration of the active region to be evaluated. The region where the electric field is absent shows an exponentially decreasing CCE profile, from which it is possible to estimate the diffusion length of the minority carriers by means of a drift-diffusion model.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Micro and nano-patterning of single-crystal diamond by swift heavy ion irradiation

This paper presents experimental data and analysis of the structural damage caused by swift-heavy ion irradiation of single-crystal diamond. The patterned buried structural damage is shown to generate, via swelling, a mirror-pattern on the sample surface, which remains largely damage-free. While extensive results are available for light ion implantations, this effect is reported here for the first time in the heavy ion regime, where a completely different range of input parameters (in terms of ion species, energy, stopping power, etc.) is available for customized irradiation. The chosen ion species are Au and Br, in the energy range 10-40 MeV. The observed patterns, as characterized by profilometry and atomic force microscopy, are reported in a series of model experiments, which show swelling patterns ranging from a few nm to above 200 nm. Moreover, a systematic phenomenological modelling is presented, in which surface swelling measurements are correlated to buried crystal damage. A comparison is made with data for light ion implantations, showing good compatibility with the proposed models. The modelling presented in this work can be useful for the design and realization of micropatterned surfaces in single crystal diamond, allowing to generate highly customized structures by combining appropriately chosen irradiation parameters and masks.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Microelectrode arrays of diamond-insulated graphitic channels for real time detection of exocytotic events from cultured chromaffin cells and slices of adrenal glands

A microstructured graphitic 4x4 multielectrode array was embedded in a single crystal diamond substrate (4x4 {uG-SCD MEA) for real-time monitoring of exocytotic events from cultured chromaffin cells and adrenal slices. The current approach relies on the development of a parallel ion beam lithographic technique, which assures the time effective fabrication of extended arrays with reproducible electrode dimensions. The reported device is suitable for performing amperometric and voltammetric recordings with high sensitivity and temporal resolution, by simultaneously acquiring data from 16 rectangularly shaped microelectrodes (20x3.5 um^2) separated by 200 um gaps. Taking advantage of the array geometry we addressed the following specific issues: i) detect both the spontaneous and KCl-evoked secretion simultaneously from several chromaffin cells directly cultured on the device surface, ii) resolve the waveform of different subsets of exocytotic events, iii) monitoring quantal secretory events from thin slices of the adrenal gland. The frequency of spontaneous release was low (0.12 Hz and 0.3 Hz respectively for adrenal slices and cultured cells) and increased up to 0.9 Hz after stimulation with 30 mM KCl in cultured cells. The spike amplitude as well as rise and decay time were comparable with those measured by carbon fiber microelectrodes and allowed to identify three different subsets of secretory events associated to "full fusion" events, "kiss and-run" and "kiss-and-stay" exocytosis, confirming that the device has adequate sensitivity and time resolution for real-time recordings. The device offers the significant advantage of shortening the time to collect data by allowing simultaneous recordings from cell populations either in primary cell cultures or in intact tissues.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Modification of the structure of diamond with MeV ion implantation

We present experimental results and numerical simulations to investigate the modification of structural-mechanical properties of ion-implanted single-crystal diamond. A phenomenological model is used to derive an analytical expression for the variation of mass density and elastic properties as a function of damage density in the crystal. These relations are applied together with SRIM Monte Carlo simulations to set up Finite Element simulations for the determination of internal strains and surface deformation of MeV-ion-implanted diamond samples. The results are validated through comparison with high resolution X-ray diffraction and white-light interferometric profilometry experiments. The former are carried out on 180 keV B implanted diamond samples, to determine the induced structural variation, in terms of lattice spacing and disorder, whilst the latter are performed on 1.8 MeV He implanted diamond samples to measure surface swelling. The effect of thermal processing on the evolution of the structural-mechanical properties of damaged diamond is also evaluated by performing the same profilometric measurements after annealing at 1000 °C, and modeling the obtained trends with a suitably modified analytical model. The results allow the development of a coherent model describing the effects of MeV-ion-induced damage on the structural-mechanical properties of single-crystal diamond. In particular, we suggest a more reliable method to determine the so-called diamond "graphitization threshold" for the considered implantation type.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Single-photon emitters based on NIR colour centres in diamond coupled with solid immersion lenses

Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centres emitting in the Near Infra-Red. In the present work, we report on the coupling of native near-infrared-emitting centres in high-quality single crystal diamond with Solid Immersion Lens structures fabricated by Focused Ion Beam lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Softening the ultra-stiff: controlled variation of Young's modulus in single crystal diamond

A combined experimental and numerical study on the variation of the elastic properties of defective single-crystal diamond is presented for the first time, by comparing nano-indentation measurements on MeV-ion-implanted samples with multi-scale modeling consisting of both ab initio atomistic calculations and meso-scale Finite Element Method (FEM) simulations. It is found that by locally introducing defects in the 2x10^18 - 5x10^21 cm-3 density range, a significant reduction of, as well as of density, can be induced in the diamond crystal structure without incurring in the graphitization of the material. Ab initio atomistic simulations confirm the experimental findings with a good degree of confidence. FEM simulations are further employed to verify the consistency of measured deformations with a stiffness reduction, and to derive strain and stress levels in the implanted region. Combining these experimental and numerical results, we also provide insight into the mechanism responsible for the depth dependence of the graphitization threshold in diamond. This work prospects the possibility of achieving accurate tunability of the mechanical properties of single-crystal diamond through defect engineering, with significant technological applications, i.e. the fabrication and control of the resonant frequency of diamond-based micromechanical resonators.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electroluminescence from nitrogen-vacancy and interstitial-related centers in bulk diamond stimulated by ion-beam-fabricated sub-superficial graphitic micro-electrodes

We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) characterization evidenced a low radiation damage concentration in the inter-electrode gap region, which did not significantly affect the PL features domi- nated by NV centers. The operation of the device in electroluminescence (EL) regime was investigated by ap- plying a bias voltage at the graphitic electrodes, resulting in the injection of a high excitation current above a threshold voltage (~300V), which effectively stimulated an intense EL emission from NV0 centers. In addition, we report on the new observation of two additional sharp EL emission lines (at 563 nm and 580 nm) related to interstitial defects formed during MeV ion beam fabrication.

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preprint2014arXiv

Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes

Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of colour centres in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the colour centres. With this purpose, buried graphitic electrodes with a spacing of 10 micrometers were fabricated in the bulk of a detector-grade CVD single-crystal diamond sample using a scanning 1.8 MeV He micro-beam. The current flowing in the gap region between the electrodes upon the application of a 250 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of colour centres localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centres ($NV^0$, $λ_{ZPL}$ = 575 nm), as well as from cluster crystal dislocations (A-band, λ = 400-500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands) from He-related defects was detected ($λ_{ZPL}$ = 536.3 nm, $λ_{ZPL}$ = 560.5 nm); a low and broad peak around λ = 740 nm was also observed and tentatively ascribed to Si-V or GR1 centres. These results pose interesting future perspectives for the fabrication of electrically-stimulated single-photon emitters in diamond for applications in quantum optics and quantum cryptography.

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preprint2013arXiv

Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector

In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers transport properties of the device. The resulting charge sharing effects may lead to bipolar currents, pulse height defects and anomalous polarity signals affecting the response of the device to ionizing radiation. This latter effect has recently attracted attention in commonly used detector materials, but different interpretations have been suggested, depending on the material, the geometry of the device and the nature of the ionizing radiation. In this letter, we report on the investigation in the formation of anomalous polarity pulses in a multi-electrode diamond detector with buried graphitic electrodes. In particular, we propose a purely electrostatic model based on the Shockley-Ramo-Gunn theory, providing a satisfactory description of anomalous pulses observed in charge collection efficiency maps measured by means of Ion Beam Induced Charge (IBIC) microscopy, and suitable for a general application in multi-electrode devices and detectors.

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preprint2012arXiv

Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

We report on the systematic characterization of conductive micro-channels fabricated in single-crystal diamond with direct ion microbeam writing. Focused high-energy (~MeV) helium ions are employed to selectively convert diamond with micrometric spatial accuracy to a stable graphitic phase upon thermal annealing, due to the induced structural damage occurring at the end-of-range. A variable-thickness mask allows the accurate modulation of the depth at which the microchannels are formed, from several μm deep up to the very surface of the sample. By means of cross-sectional transmission electron microscopy (TEM) we demonstrate that the technique allows the direct writing of amorphous (and graphitic, upon suitable thermal annealing) microstructures extending within the insulating diamond matrix in the three spatial directions, and in particular that buried channels embedded in a highly insulating matrix emerge and electrically connect to the sample surface at specific locations. Moreover, by means of electrical characterization both at room temperature and variable temperature, we investigate the conductivity and the charge-transport mechanisms of microchannels obtained by implantation at different ion fluences and after subsequent thermal processes, demonstrating that upon high-temperature annealing, the channels implanted above a critical damage density convert to a stable graphitic phase. These structures have significant impact for different applications, such as compact ionizing radiation detectors, dosimeters, bio-sensors and more generally diamond-based devices with buried three-dimensional all-carbon electrodes.

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