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N. Q. Vinh

N. Q. Vinh appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallBiological Physicscond-mat.otherphysics.app-phphysics.chem-phphysics.ins-detphysics.opticsphysics.plasm-phquant-ph

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Published work

8 published item(s)

preprint2020arXiv

Observation of Optical Gain in Er-Doped GaN Epilayers

Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN epilayers prepared by metal-organic chemical vapor deposition. Using the variable stripe technique, the observation of the stimulated emission has been demonstrated through characteristic features of threshold behavior of emission intensity as functions of pump intensity, excitation length, and spectral linewidth narrowing. Using the variable stripe setup, the optical gain up to 75 cm-1 has been obtained in the GaN:Er epilayers. The near infrared lasing from GaN semiconductor opens up new possibilities for extended functionalities and integration capabilities for optoelectronic devices.

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preprint2016arXiv

Inducing an Incipient Terahertz Finite Plasmonic Crystal in Coupled Two Dimensional Plasmonic Cavities

We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two-dimensional electron channel. The observed terahertz absorption spectrum indicates coherence between plasmons excited under adjacent biased device gates. The experimental results agree quantitatively with a theoretical model we developed that is based on a generalized plasmonic transmission line formalism and describes an evolution of the plasmonic spectrum with increasing electron density modulation from homogeneous to the crystal limit. These results demonstrate an electronically induced and dynamically tunable plasmonic band structure.

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preprint2016arXiv

Photoluminescence quantum efficiency of Er optical centers in GaN epilayers

We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a picture of the thermal quenching processes and activation energy levels. By comparing the photoluminescence from Er ions in the epilayer with a reference sample of Er-doped SiO2, we find that the fraction of Er ions that emits photon at 1.54 micron upon a resonant optical excitation is approximately 68%. This result presents a significant step in the realization of GaN:Er epilayers as an optical gain medium at 1.54 micron.

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preprint2015arXiv

Excitation Mechanisms of Er Optical Centers in GaN Epilayers

We report direct evidence of two mechanisms responsible for the excitation of optically active Er3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er centers. However, these centers have different photoluminescence spectra, decay dynamics, and excitation cross sections. The isolated Er optical center, which can be excited by either mechanism, has the same decay dynamics, but possesses a much higher cross-section under band-to-band excitation. In contrast, the defect-related Er center can only be excited through band-to-band excitation but has the largest cross-section. These results explain the difficulty in achieving gain in Er doped GaN and indicate new approaches for realization of optical amplification, and possibly lasing, at room temperature.

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preprint2015arXiv

High-precision gigahertz-to-terahertz spectroscopy of aqueous salt solutions as a probe of the femtosecond-to-picosecond dynamics of liquid water

Because it is sensitive to fluctuations occurring over femtoseconds to picoseconds, gigahertz-to-terahertz dielectric relaxation spectroscopy can provide a valuable window into water's most rapid intermolecular motions. In response, we have built a vector network analyzer dielectric spectrometer capable of measuring absorbance and index of refraction in this frequency regime with unprecedented precision. Using this to determine the complex dielectric response of water and aqueous salt solutions from 5.9 GHz to 1.12 THz (which we provide in the SI), we have obtained strong new constraints on theories of water's collective dynamics. For example, while the salt-dependencies we observe for water's two slower relaxations (8 and 1 ps) are easily reconciled with suggestions that they arise due to rotations of fully and partially hydrogen bonded molecules, respectively, the salt-dependence of the fastest relaxation (180 fs) appears difficult to reconcile with its prior assignment to liberations of single hydrogen bonds.

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preprint2015arXiv

New terahertz dielectric spectroscopy for the study aqueous solutions

We present a development of a high precision, tunable far-infrared (terahertz) frequency-domain dielectric spectrometer for studying the dynamics of biomolecules in aqueous solutions in the gigahertz-to-terahertz frequency. As a first application we report on the measurement of the absorption and refractive index for liquid water in the frequency range from 5 GHz to 1.12 THz (0.17 to 37.36 cm-1 or 0.268 to 60 mm). The system provides a coherent radiation source with a power up to 20 mW in the gigahertz-to-terahertz region. The power signal-to-noise ratio of our instrument reaches 1015 and the system achieves a spectral resolution of less than 100 Hz. The temperature of samples can be controlled precisely with an error bars of 0.02 oC from above 0 oC to 90 oC. Given these attributes, our spectrometer provides unique capabilities for the accurate measurement of even very strongly absorbing materials such as aqueous solutions.

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preprint2010arXiv

Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed.

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