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H. X. Jiang

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cond-mat.mtrl-sci Computational Engineering, Finance, and Science cond-mat.dis-nn math.OC physics.app-ph physics.comp-ph

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preprint2020arXiv

Observation of Optical Gain in Er-Doped GaN Epilayers

Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN epilayers prepared by metal-organic chemical vapor deposition. Using the variable stripe technique, the observation of the stimulated emission has been demonstrated through characteristic features of threshold behavior of emission intensity as functions of pump intensity, excitation length, and spectral linewidth narrowing. Using the variable stripe setup, the optical gain up to 75 cm-1 has been obtained in the GaN:Er epilayers. The near infrared lasing from GaN semiconductor opens up new possibilities for extended functionalities and integration capabilities for optoelectronic devices.

preprint2019arXiv

Robust concurrent topology optimization of structure and its composite material considering uncertainty with imprecise probability

This paper studied a robust concurrent topology optimization (RCTO) approach to design the structure and its composite materials simultaneously. For the first time, the material uncertainty with imprecise probability is integrated into the multi-scale concurrent topology optimization (CTO) framework. To describe the imprecise probabilistic uncertainty efficiently, the type I hybrid interval random model is adopted. An improved hybrid perturbation analysis (IHPA) method is formulated to estimate the expectation and stand variance of the objective function in the worst case. Combined with the bi-directional evolutionary structural optimization (BESO) framework, the robust designs of the structure and its composite material are carried out. Several 2D and 3D numerical examples are presented to illustrate the effectiveness of the proposed method. The results show that the proposed method has high efficiency and low precision loss. In addition, the proposed RCTO approach remains efficient in both of linear static and dynamic structures, which shows its extensive adaptability.

preprint2016arXiv

Photoluminescence quantum efficiency of Er optical centers in GaN epilayers

We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a picture of the thermal quenching processes and activation energy levels. By comparing the photoluminescence from Er ions in the epilayer with a reference sample of Er-doped SiO2, we find that the fraction of Er ions that emits photon at 1.54 micron upon a resonant optical excitation is approximately 68%. This result presents a significant step in the realization of GaN:Er epilayers as an optical gain medium at 1.54 micron.

preprint2015arXiv

Excitation Mechanisms of Er Optical Centers in GaN Epilayers

We report direct evidence of two mechanisms responsible for the excitation of optically active Er3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er centers. However, these centers have different photoluminescence spectra, decay dynamics, and excitation cross sections. The isolated Er optical center, which can be excited by either mechanism, has the same decay dynamics, but possesses a much higher cross-section under band-to-band excitation. In contrast, the defect-related Er center can only be excited through band-to-band excitation but has the largest cross-section. These results explain the difficulty in achieving gain in Er doped GaN and indicate new approaches for realization of optical amplification, and possibly lasing, at room temperature.

preprint2011arXiv

Metastable giant moments in Gd-implanted GaN, Si, and sapphire

We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800 mu_B, while the moments in Gd-implanted Si and sapphire were only slightly smaller. The apparent induced ferromagnetic response was found to be metastable, disappearing after on the order of 50 days at room temperature, except for the implanted sapphire. We argue that our findings support a defect-based picture of magnetism in Gd-implanted semiconductors and insulators.