Researcher profile

N. Deng

N. Deng contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Stability of multielectron bubbles in high Landau levels

We study multielectron bubble phases in the $N=2$ and $N=3$ Landau levels in a high mobility GaAs/AlGaAs sample. We found that the longitudinal magnetoresistance versus temperature curves in the multielectron bubble region exhibit sharp peaks, irrespective of the Landau level index. We associate these peaks with an enhanced scattering caused by thermally fluctuating domains of a bubble phase and a uniform uncorrelated electron liquid at the onset of the bubble phases. Within the $N=3$ Landau level, onset temperatures of three-electron and two-electron bubbles exhibit linear trends with respect to the filling factor; the onset temperatures of three-electron bubbles are systematically higher than those of two-electron bubbles. Furthermore, onset temperatures of the two-electron bubble phases across $N=2$ and $N=3$ Landau levels are similar, but exhibit an offset. This offset and the dominant nature of the three-electron bubbles in the $N=3$ Landau level reveals the role of the short-range part of the electron-electron interaction in the formation of the bubbles.

preprint2020arXiv

Disorder broadening of even denominator fractional quantum Hall states in the presence of a short-range alloy potential

We study energy gaps of the $ν=7/2$ and $ν=5/2$ fractional quantum Hall states in a series of two-dimensional electron gases containing alloy disorder. We found that gaps at these two filling factors have the same suppression rate with alloy disorder. The dimensionless intrinsic gaps in our alloy samples obtained from the model proposed by Morf and d'Ambrumenil are consistent with numerical results, but are larger than those obtained from experiments on pristine samples published in the literature. The disorder broadening parameter has large uncertainties. However, a modified analysis relying on shared intrinsic gaps yields consistent results for both the $ν=5/2$ and $7/2$ fractional quantum Hall states and establishes a linear relationship between the disorder broadening parameter and alloy concentration. Furthermore, we find that we can separate contributions to the disorder broadening of the long-range and short-range scattering.