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M. J. Manfra

M. J. Manfra appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat.supr-conquant-phcond-mat.otherphysics.app-ph

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Published work

38 published item(s)

preprint2022arXiv

Local and Non-local Microwave Impedance of a Three-Terminal Hybrid Device

We report microwave impedance measurements of a superconductor-semiconductor hybrid nanowire device with three terminals (3T). Our technique makes use of transmission line resonators to acquire the nine complex scattering matrix parameters (S-parameters) of the device on fast timescales and across a spectrum of frequencies spanning 0.3 - 7 GHz. Via comparison with dc-transport measurements, we examine the utility of this technique for probing the local and non-local response of 3T devices where capacitive and inductive contributions can play a role. Such measurements require careful interpretation but may be of use in discerning true Majorana zero modes from trivial states arising from disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Measurements of cyclotron resonance of the interfacial states in strong spin-orbit coupled 2D electron gases proximitized with aluminum

Two-dimensional electron gasses (2DEG) in InAs quantum wells proximitized by aluminum are promising platforms for topological qubits based on Majorana zero modes. However, there are still substantial uncertainties associated with the nature of the electronic states at the interfaces of these systems. It is challenging to probe the properties of these hybridized states as they are buried under a relatively thick aluminum layer. In this work, we have investigated a range of InAs/In$ _{1-\text{x}} $Ga$ _\text{x} $As heterostructures with Al overlayers using high precision time-domain THz spectroscopy. Despite the thick metallic overlayer, we observe a prominent cyclotron resonance in the magnetic field that can be associated with the response of the interfacial states. Measurements of the THz range complex Faraday rotation allow the extraction of the sign and magnitude of the effective mass, the density of charge carriers, and scattering times of the 2DEG despite the close proximity of the aluminum layer. We discuss the extracted band parameters and connect their values to the known physics of these materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spin-orbit coupling and electron scattering in high-quality InSb$_{1-x}$As$_{x}$ quantum wells

InSb$_{1-x}$As$_{x}$ is a promising material system for exploration of topological superconductivity in hybrid superconductor/semiconductor devices due to large effective g-factor and enhanced spin-orbit coupling when compared to binary InSb and InAs. Much remains to be understood concerning the fundamental properties of the two-dimensional electron gas (2DEG) in InSbAs quantum wells. We report on the electrical properties of a series of 30 nm InSb$_{1-x}$As$_{x}$ quantum wells grown 40 nm below the surface with three different arsenic mole fractions, x = 0.05, 0.13 and 0.19. The dependencies of mobility on 2DEG density and arsenic mole fraction are analyzed. For the x = 0.05 sample, the 2DEG displays a peak mobility $μ$ = 2.4 $\times$ 10$^5$ cm$^2$/Vs at a density of n = 2.5 $\times$ 10$^{11}$ cm$^{-2}$. High mobility, small effective mass, and strong spin-orbit coupling result in beating in the Shubnikov de Hass oscillations at low magnetic field. Fourier analysis of the Shubnikov de Haas oscillations facilitates extraction of the Rashba spin-orbit parameter $α$ as a function of 2DEG density and quantum well mole fraction. For x = 0.19 at n = 3.1 $\times$ 10$^{11}$ cm$^{-2}$, $α$ $\approx$ 300 meV$Å$, among the highest reported values in III-V materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of $μ\approx 3200\,\mathrm{cm^2/Vs}$ for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, $\mathcal{T} \approx 0.75 $, gate voltage tunable switching current with a product of critical current and normal state resistance, $I_{\mathrm{C}}R_{\mathrm{N}} \approx 83\,\mathrm{μV}$, and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.

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preprint2021arXiv

Hydrodynamic and ballistic transport over large length scales in GaAs/AlGaAs

We study hydrodynamic and ballistic transport regimes through nonlocal resistance measurements and high-resolution kinetic simulations in a mesoscopic structure on a high-mobility two-dimensional electron system in a GaAs/AlGaAs heterostructure. We evince the existence of collective transport phenomena in both regimes and demonstrate that negative nonlocal resistances and current vortices are not exclusive to only the hydrodynamic regime. The combined experiments and simulations highlight the importance of device design, measurement schemes and one-to-one modeling of experimental devices to demarcate various transport regimes.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Stability of multielectron bubbles in high Landau levels

We study multielectron bubble phases in the $N=2$ and $N=3$ Landau levels in a high mobility GaAs/AlGaAs sample. We found that the longitudinal magnetoresistance versus temperature curves in the multielectron bubble region exhibit sharp peaks, irrespective of the Landau level index. We associate these peaks with an enhanced scattering caused by thermally fluctuating domains of a bubble phase and a uniform uncorrelated electron liquid at the onset of the bubble phases. Within the $N=3$ Landau level, onset temperatures of three-electron and two-electron bubbles exhibit linear trends with respect to the filling factor; the onset temperatures of three-electron bubbles are systematically higher than those of two-electron bubbles. Furthermore, onset temperatures of the two-electron bubble phases across $N=2$ and $N=3$ Landau levels are similar, but exhibit an offset. This offset and the dominant nature of the three-electron bubbles in the $N=3$ Landau level reveals the role of the short-range part of the electron-electron interaction in the formation of the bubbles.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anomalous Nematic States in High Half-Filled Landau Levels

It is well established that the ground states of a two-dimensional electron gas with half-filled high ($N \ge 2$) Landau levels are compressible charge-ordered states, known as quantum Hall stripe (QHS) phases. The generic features of QHSs are a maximum (minimum) in a longitudinal resistance $R_{xx}$ ($R_{yy}$) and a non-quantized Hall resistance $R_H$. Here, we report on emergent minima (maxima) in $R_{xx}$ ($R_{yy}$) and plateau-like features in $R_H$ in half-filled $N \ge 3$ Landau levels. Remarkably, these unexpected features develop at temperatures considerably lower than the onset temperature of QHSs, suggesting a new ground state.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Coherent transport through a Majorana island in an Aharonov-Bohm interferometer

Majorana zero modes are leading candidates for topological quantum computation due to non-local qubit encoding and non-abelian exchange statistics. Spatially separated Majorana modes are expected to allow phase-coherent single-electron transport through a topological superconducting island via a mechanism referred to as teleportation. Here we experimentally investigate such a system by patterning an elongated epitaxial InAs-Al island embedded in an Aharonov-Bohm interferometer. With increasing parallel magnetic field, a discrete sub-gap state in the island is lowered to zero energy yielding persistent 1e-periodic Coulomb blockade conductance peaks (e is the elementary charge). In this condition, conductance through the interferometer is observed to oscillate in a perpendicular magnetic field with a flux period of h/e (h is Planck's constant), indicating coherent transport of single electrons through the islands, a signature of electron teleportation via Majorana modes, could also be observed, suggesting additional non-Majorana mechanisms for 1e transport through these moderately short wires.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Disorder broadening of even denominator fractional quantum Hall states in the presence of a short-range alloy potential

We study energy gaps of the $ν=7/2$ and $ν=5/2$ fractional quantum Hall states in a series of two-dimensional electron gases containing alloy disorder. We found that gaps at these two filling factors have the same suppression rate with alloy disorder. The dimensionless intrinsic gaps in our alloy samples obtained from the model proposed by Morf and d'Ambrumenil are consistent with numerical results, but are larger than those obtained from experiments on pristine samples published in the literature. The disorder broadening parameter has large uncertainties. However, a modified analysis relying on shared intrinsic gaps yields consistent results for both the $ν=5/2$ and $7/2$ fractional quantum Hall states and establishes a linear relationship between the disorder broadening parameter and alloy concentration. Furthermore, we find that we can separate contributions to the disorder broadening of the long-range and short-range scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Autonomous tuning and charge state detection of gate defined quantum dots

Defining quantum dots in semiconductor based heterostructures is an essential step in initializing solid-state qubits. With growing device complexity and increasing number of functional devices required for measurements, a manual approach to finding suitable gate voltages to confine electrons electrostatically is impractical. Here, we implement a two-stage device characterization and dot-tuning process which first determines whether devices are functional and then attempts to tune the functional devices to the single or double quantum dot regime. We show that automating well established manual tuning procedures and replacing the experimenter's decisions by supervised machine learning is sufficient to tune double quantum dots in multiple devices without pre-measured input or manual intervention. The quality of measurement results and charge states are assessed by four binary classifiers trained with experimental data, reflecting real device behaviour. We compare and optimize eight models and different data preprocessing techniques for each of the classifiers to achieve reliable autonomous tuning, an essential step towards scalable quantum systems in quantum dot based qubit architectures.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Dispersive Gate Sensing the Quantum Capacitance of a Point Contact

The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to the open regime, where many electrons are transported via partially- or fully-transmitting quantum modes. Comparing DGS with conventional transport shows that the technique can resolve the Van Hove singularities of a one-dimensional ballistic system, and also probe aspects of the potential landscape that are not easily accessed with dc transport. Beyond readout, these results suggest that gate-sensing can also be of use in tuning-up qubits or probing the charge configuration of open quantum devices in the regime where electrons are delocalized.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Relating Andreev Bound States and Supercurrents in Hybrid Josephson Junctions

We investigate superconducting quantum interference devices consisting of two highly transmissive Josephson junctions coupled by a superconducting loop, all defined in an epitaxial InAs/Al heterostructure. A novel device design allows for independent measurements of the Andreev bound state spectrum within the normal region of a junction and the resulting current-phase relation. We show that knowledge of the Andreev bound state spectrum alone is enough to derive the independently measured phase dependent supercurrent. On the other hand, the opposite relation does not generally hold true as details of the energy spectrum are averaged out in a critical current measurement. Finally, quantitative understanding of field dependent spectrum and supercurrent require taking into account the second junction in the loop and the kinetic inductance of the epitaxial Al film.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Evidence for a new symmetry breaking mechanism reorienting quantum Hall nematics

We report on the effect of in-plane magnetic field $B_\parallel$ on stripe phases in higher ($N=2,3$) Landau levels of a high-mobility 2D electron gas. In accord with previous studies, we find that a modest $B_\parallel$ applied parallel to the native stripes aligns them perpendicular to it. However, upon further increase of $B_\parallel$, stripes are reoriented back to their native direction. Remarkably, applying $B_\parallel$ perpendicular to the native stripes also aligns stripes parallel to it. Thus, regardless of the initial orientation of stripes with respect to $B_\parallel$, stripes are ultimately aligned \emph{parallel} to $B_\parallel$. These findings provide evidence for a $B_\parallel$-induced symmetry breaking mechanism which challenge current understanding of the role of $B_\parallel$ and should be taken into account when determining the strength of the native symmetry breaking potential. Finally, our results might indicate nontrivial coupling between the native and external symmetry breaking fields, which has not yet been theoretically considered.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum capacitance anomalies of two-dimensional non-equilibrium states under microwave irradiation

We report our direct study of the compressibility on ultrahigh mobility two-dimensional electron system ($μ_{e} \sim 1 \times 10^{7}$ cm$^{2}$/Vs) in GaAs/AlGaAs quantum wells under microwave (MW) irradiation. The field penetration current results show that the quantum capacitance oscillates with microwave induced resistance oscillations (MIRO), however, the trend is opposite with respect to the compressibility for usual equilibrium states in previous theoretical explanations. The anomalous phenomena provide a platform for study on the non-equilibrium system under microwave, and point to the current domains and inhomogeneity induced by radiation. Moreover, the quantum capacitance indication for multi-photon process around $j = 1/2$ is detected under intensive microwave below 30 GHz.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Reorientation of quantum Hall stripes within a partially filled Landau level

We investigate the effect of the filling factor on transport anisotropies, known as stripes, in high Landau levels of a two-dimensional electron gas. We find that at certain in-plane magnetic fields, the stripes orientation is sensitive to the filling factor within a given Landau level. This sensitivity gives rise to the emergence of stripes away from half-filling while an orthogonally-oriented, native stripes reside at half-filling. This switching of the anisotropy axes within a single Landau level can be attributed to a strong dependence of the native symmetry breaking potential on the filling factor.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Resistively detected high-order magnetoplasmons in a high-quality 2D electron gas

We report on high-order magnetoplasmon resonances detected in photoresistance in high-mobility GaAs quantum wells. These resonances manifest themselves as a series of photoresistance extrema in the regime of Shubnikov-de Haas oscillations. Extending to orders above 20, the extrema exhibit alternating strength, being less (more) pronounced at even (odd) order magnetoplasmon modes. This experimental technique provides sensitive and elegant means to detect and investigate multiple magnetoplasmon modes and could be applied to other systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spatially resolved breakdown in reentrant quantum Hall states

Reentrant integer quantum Hall (RIQH) states are believed to be correlated electron solid phases, though their microscopic description remains unclear. As bias current increases, longitudinal and Hall resistivities measured for these states exhibit multiple sharp breakdown transitions, a signature unique to RIQH states. We present spatially-resolved measurements of RIQH breakdown that indicate these breakdown signatures can be ascribed to a phase boundary between broken-down and unbroken regions, spreading chirally from source and drain contacts as a function of bias current and passing voltage probes one by one. The chiral sense of the spreading is not set by the chirality of the edge state itself, instead depending on electron- or hole-like character of the RIQH state.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Gapped Excitations of unconventional FQHE states in the Second Landau Level

We report the observation of low-lying collective charge and spin excitations in the second Landau level at ν = 2 + 1/3 and also for the very fragile states at ν = 2 + 2/5, 2 + 3/8 in inelastic light scattering experiments. These modes exhibit a clear dependence on filling factor and temperature substantiating the unique access to the characteristic neutral excitation spectra of the incompressible FQHE states. A detailed mode analysis reveals low energy modes at around 70 μeV and a sharp mode slightly below the Zeeman energy interpreted as gap and spin wave excitation, respectively. The lowest energy collective charge excitation spectrum at ν = 2 + 1/3 exhibits significant similarities and a universal scaling of the energies with its cousin state in the lowest Landau level at ν = 1/3 suggesting similar underlying physics. The observed excitation spectra facilitate to distinguish between theoretical descriptions of the nature of those FQHE states. A striking polarization dependence in light scattering is discussed in the framework of anisotropic electron phases that allow for the stabilization of nematic FQHE states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Impact of Heterostructure Design on Transport Properties in the Second Landau Level of in-situ Back-Gated Two-Dimensional Electron Gases

We report on transport in the second Landau level in \emph{in-situ} back-gated two-dimensional electron gases in GaAs/Al$_x$Ga$_{1-x}$As quantum wells. Minimization of gate leakage is the primary heterostructure design consideration. Leakage currents resulting in dissipation as small as $\sim$ 10 pW can cause noticeable heating of the electrons at 10 mK, limiting the formation of novel correlated states. We show that when the heterostructure design is properly optimized, gate voltages as large as 4V can be applied with negligible gate leakage, allowing the density to be tuned over a large range from depletion to over 4 $\times$ 10$^{11}$ cm$^{-2}$. As a result, the strength of the $ν= 5/2$ state can be continuously tuned from onset at n $\sim 1.2 \times 10^{11}$ cm$^{-2}$ to a maximum $Δ_{5/2} = 625$ mK at n = $3.35 \times 10^{11}$ cm$^{-2}$. An unusual evolution of the reentrant integer quantum Hall states as a function of density is also reported. These devices can be expected to be useful in experiments aimed at proving the existence of non-Abelian phases useful for topological quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of a transition from a topologically ordered to a spontaneously broken symmetry phase

Until the late 1980s, phases of matter were understood in terms of Landau's symmetry breaking theory. Following the discovery of the quantum Hall effect the introduction of a second class of phases, those with topological order, was necessary. Phase transitions within the first class of phases involve a change in symmetry, whereas those between topological phases require a change in topological order. However, in rare cases transitions may occur between the two classes in which the vanishing of the topological order is accompanied by the emergence of a broken symmetry. Here, we report the existence of such a transition in a two-dimensional electron gas hosted by a GaAs/AlGaAs crystal. When tuned by hydrostatic pressure, the $ν=5/2$ fractional quantum Hall state, believed to be a prototype non-Abelian topological phase, gives way to a quantum Hall nematic phase. Remarkably, this nematic phase develops spontaneously, in the absence of any externally applied symmetry breaking fields.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optical emission spectroscopy study of competing phases of electrons in the second Landau level

Quantum phases of electrons in the filling factor range $2 \leqν\leq 3$ are probed by the weak optical emission from the partially populated second Landau level and spin wave measurements. Observations of optical emission include a multiplet of sharp peaks that exhibit a strong filling factor dependence. Spin wave measurements by resonant inelastic light scattering probe breaking of spin rotational invariance and are used to link this optical emission with collective phases of electrons. A remarkably rapid interplay between emission peak intensities manifests phase competition in the second Landau level.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Shubnikov-de Haas oscillations in two-dimensional electron gas under subterahertz radiation

We report on magnetotransport measurements in a two-dimensional (2D) electron gas subject to subterahertz radiation in the regime where Shubnikov-de Haas oscillations (SdHO) and microwave-induced resistance oscillations (MIRO) coexist over a wide magnetic field range, spanning several harmonics of the cyclotron resonance. Surprisingly, we find that the SdHO amplitude is modified by the radiation in a non-trivial way owing to the oscillatory correction which has the same period and phase as MIRO. This finding challenges our current understanding of microwave photoresistance in 2D electron gas, calling for future investigations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Cryogenic Control Architecture for Large-Scale Quantum Computing

Solid-state qubits have recently advanced to the level that enables them, in-principle, to be scaled-up into fault-tolerant quantum computers. As these physical qubits continue to advance, meeting the challenge of realising a quantum machine will also require the engineering of new classical hardware and control architectures with complexity far beyond the systems used in today's few-qubit experiments. Here, we report a micro-architecture for controlling and reading out qubits during the execution of a quantum algorithm such as an error correcting code. We demonstrate the basic principles of this architecture in a configuration that distributes components of the control system across different temperature stages of a dilution refrigerator, as determined by the available cooling power. The combined setup includes a cryogenic field-programmable gate array (FPGA) controlling a switching matrix at 20 millikelvin which, in turn, manipulates a semiconductor qubit.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Full control of quadruple quantum dot circuit charge states in the single electron regime

We report the realization of an array of four tunnel coupled quantum dots in the single electron regime, which is the first required step toward a scalable solid state spin qubit architecture. We achieve an efficient tunability of the system but also find out that the conditions to realize spin blockade readout are not as straightforwardly obtained as for double and triple quantum dot circuits. We use a simple capacitive model of the series quadruple quantum dots circuit to investigate its complex charge state diagrams and are able to find the most suitable configurations for future Pauli spin blockade measurements. We then experimentally realize the corresponding charge states with a good agreement to our model.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Multiphoton processes at cyclotron resonance subharmonics in a 2D electron system under DC and microwave excitation

We investigate a two-dimensional electron system (2DES) under microwave illumination at cyclotron resonance subharmonics. The 2DES carries sufficient direct current, $I$, that the differential resistivity oscillates as $I$ is swept. At magnetic fields sufficient to resolve individual Landau levels, we find the number of oscillations within an $I$ range systematically changes with increasing microwave power. Microwave absorption and emission of $N$ photons, where $N$ is controlled by the microwave power, describes our observations in the framework of the displacement mechanism of impurity scattering between Hall-field tilted Landau levels.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

We demonstrate THz intersubband absorption (15.6-26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is therefore attributed to many-body effects. Furthermore, a ~40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

The $ν=5/2$ Fractional Quantum Hall State in the Presence of Alloy Disorder

We report quantitative measurements of the impact of alloy disorder on the $ν=5/2$ fractional quantum Hall state. Alloy disorder is controlled by the aluminum content $x$ in the Al$_x$Ga$_{1-x}$As channel of a quantum well. We find that the $ν=5/2$ state is suppressed with alloy scattering. To our surprise, in samples with alloy disorder the $ν=5/2$ state appears at significantly reduced mobilities when compared to samples in which alloy disorder is not the dominant scattering mechanism. Our results highlight the distinct roles of the different types of disorder present in these samples, such as the short-range alloy and the long-range Coulomb disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Evidence for effective mass reduction in GaAs/AlGaAs quantum wells

We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. Surprisingly, the effective mass, obtained from the period of microwave-induced resistance oscillations, is found to be about 12% lower than the band mass in GaAs, $\mb$. This finding provides strong evidence for electron-electron interactions which can be probed by microwave photoresistance in very high Landau levels. In contrast, the measured magnetoplasmon dispersion revealed an effective mass which is close to $\mb$, in accord with previous studies.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec

In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. Highest ION = 0.63mA/μm and gm = 1.74mS/μm have also been achieved at VDD=0.5V, showing great promise of InGaAs GAA technology for 10nm and beyond high-speed low- power logic applications.

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preprint2012arXiv

Contrasting Energy Scales of the Reentrant Integer Quantum Hall States

We report drastically different onset temperatures of the reentrant integer quantum Hall states in the second and third Landau level. This finding is in quantitative disagreement with the Hartree-Fock theory of the bubble phases which is thought to describe these reentrant states. Our results indicate that the number of electrons per bubble in either the second or the third Landau level is likely different than predicted.

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preprint2012arXiv

Exploration of the Limits to Mobility in Two-Dimensional Hole Systems in GaAs/AlGaAs Quantum Wells

We report on the growth and electrical characterization of a series of two-dimensional hole systems (2DHSs) used to study the density dependence of low temperature mobility in 20 nm GaAs/AlGaAs quantum wells. The hole density was controlled by changing the Al mole fraction and the setback of the delta-doping layer. We varied the density over a range from 1.8 $\times$ 10$^{10}$ cm$^{-2}$ to 1.9 $\times$ 10$^{11}$ cm$^{-2}$ finding a nonmonotonic dependence of mobility on density at T = 0.3 K. Surprisingly, a peak mobility of 2.3 $\times$ 10$^6$ cm$^2$/Vs was measured at a density of 6.5 $\times$ 10$^{10}$ cm$^{-2}$ with further increase in density resulting in reduced mobility. We discuss possible mechanisms leading to the observed non-monotonic density dependence of the mobility. Relying solely on interface roughness scattering to explain the observed drop in mobility at high density requires roughness parameters which are not consistent with measurements of similar electron structures. This leaves open the possibility of contributions from other scattering mechanisms at high density.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D

In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from 3D to 4D structure has been developed and summarized. The successful fabrication of InGaAs lateral and vertical NW arrays has led to 4x increase in MOSFET drive current. The top-down technology developed in this paper has opened a viable pathway towards future low-power logic and RF transistors with high-density III-V NWs.

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preprint2012arXiv

Magnetoplasmon resonance in 2D electron system driven into a zero-resistance state

We report on a remarkably strong, and a rather sharp, photoresistance peak originating from a dimensional magnetoplasmon resonance (MPR) in a high mobility GaAs/AlGaAs quantum well driven by microwave radiation into a zero-resistance state (ZRS). The analysis of the MPR signalreveals a negative background providing experimental evidence for the concept of absolute negative resistance associated with the ZRS. When a system is further subject to a dc field, the maxima of microwave-induced resistance oscillations decay away and a system reveals a state with close-to-zero differential resistance. The MPR peak, on the other hand, remains essentially unchanged, indicating surprisingly robust Ohmic behavior under the MPR conditions.

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preprint2011arXiv

Evidence for the Collective Nature of the Reentrant Integer Quantum Hall States of the Second Landau Level

We report an unexpected sharp peak in the temperature dependence of the magnetoresistance of the reentrant integer quantum Hall states in the second Landau level. This peak defines the onset temperature of these states. We find that in different spin branches the onset temperatures of the reentrant states scale with the Coulomb energy. This scaling provides direct evidence that Coulomb interactions play an important role in the formation of these reentrant states evincing their collective nature.

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preprint2011arXiv

Integrated Electronic Transport and Thermometry at milliKelvin Temperatures and in Strong Magnetic Fields

We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork Helium-3 viscometry which monitors the local temperature of the sample's environment in real time. The operation and measurement circuitry of the quartz viscometer is described in detail. We provide evidence that the temperature of two-dimensional electron gas confined to a GaAs quantum well follows the temperature of the quartz viscometer down to 4mK.

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preprint2011arXiv

Quantitative Analysis of the Disorder Broadening and the Intrinsic Gap for the $ν=5/2$ Fractional Quantum Hall State

We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the second Landau level. We apply this technique to several samples of vastly different densities and grown in different MBE chambers. Excellent agreement is found between the estimated intrinsic and numerically obtained energy gaps for the $ν=5/2$ fractional quantum Hall state. Futhermore, we quantify, for the first time, the dependence of the intrinsic gap at $ν=5/2$ on Landau level mixing.

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preprint2011arXiv

Scattering Mechanisms in a High Mobility Low Density Carbon-Doped (100) GaAs Two-Dimensional Hole System

We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured. This is the highest mobility reported for a 2DHS to date. Using a back-gated sample geometry, the density dependence of mobility was studied from 2.8 x 10^10 cm^-2 to 1 x 10^11 cm^-2. The mobility vs. density cannot be fit to a power law dependence of the form mu ~ p^alpha using a single exponent alpha. Our data indicate a continuous evolution of the power law with alpha ranging from ~ 0.7 at high density and increasing to ~ 1.7 at the lowest densities measured. Calculations specific to our structure indicate a crossover of the dominant scattering mechanism from uniform background impurity scattering at high density to remote ionized impurity scattering at low densities. This is the first observation of a carrier density-induced transition from background impurity dominated to remote dopant dominated transport in a single sample.

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preprint2010arXiv

Nonconventional odd denominator fractional quantum Hall states in the second Landau level

We report the observation of a new fractional quantum Hall state in the second Landau level of a two-dimensional electron gas at the Landau level filling factor $ν=2+6/13$. We find that the model of noninteracting composite fermions can explain the magnitude of gaps of the prominent 2+1/3 and 2+2/3 states. The same model fails, however, to account for the gaps of the 2+2/5 and the newly observed 2+6/13 states suggesting that these two states are of exotic origin.omposite fermion model. However, the weaker 2+2/5 and 2+6/13 states deviate significantly suggesting that these states are of exotic origin.

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