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G. A. Csáthy

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Published work

13 published item(s)

preprint2021arXiv

Stability of multielectron bubbles in high Landau levels

We study multielectron bubble phases in the $N=2$ and $N=3$ Landau levels in a high mobility GaAs/AlGaAs sample. We found that the longitudinal magnetoresistance versus temperature curves in the multielectron bubble region exhibit sharp peaks, irrespective of the Landau level index. We associate these peaks with an enhanced scattering caused by thermally fluctuating domains of a bubble phase and a uniform uncorrelated electron liquid at the onset of the bubble phases. Within the $N=3$ Landau level, onset temperatures of three-electron and two-electron bubbles exhibit linear trends with respect to the filling factor; the onset temperatures of three-electron bubbles are systematically higher than those of two-electron bubbles. Furthermore, onset temperatures of the two-electron bubble phases across $N=2$ and $N=3$ Landau levels are similar, but exhibit an offset. This offset and the dominant nature of the three-electron bubbles in the $N=3$ Landau level reveals the role of the short-range part of the electron-electron interaction in the formation of the bubbles.

preprint2020arXiv

Disorder broadening of even denominator fractional quantum Hall states in the presence of a short-range alloy potential

We study energy gaps of the $ν=7/2$ and $ν=5/2$ fractional quantum Hall states in a series of two-dimensional electron gases containing alloy disorder. We found that gaps at these two filling factors have the same suppression rate with alloy disorder. The dimensionless intrinsic gaps in our alloy samples obtained from the model proposed by Morf and d'Ambrumenil are consistent with numerical results, but are larger than those obtained from experiments on pristine samples published in the literature. The disorder broadening parameter has large uncertainties. However, a modified analysis relying on shared intrinsic gaps yields consistent results for both the $ν=5/2$ and $7/2$ fractional quantum Hall states and establishes a linear relationship between the disorder broadening parameter and alloy concentration. Furthermore, we find that we can separate contributions to the disorder broadening of the long-range and short-range scattering.

preprint2015arXiv

Impact of Heterostructure Design on Transport Properties in the Second Landau Level of in-situ Back-Gated Two-Dimensional Electron Gases

We report on transport in the second Landau level in \emph{in-situ} back-gated two-dimensional electron gases in GaAs/Al$_x$Ga$_{1-x}$As quantum wells. Minimization of gate leakage is the primary heterostructure design consideration. Leakage currents resulting in dissipation as small as $\sim$ 10 pW can cause noticeable heating of the electrons at 10 mK, limiting the formation of novel correlated states. We show that when the heterostructure design is properly optimized, gate voltages as large as 4V can be applied with negligible gate leakage, allowing the density to be tuned over a large range from depletion to over 4 $\times$ 10$^{11}$ cm$^{-2}$. As a result, the strength of the $ν= 5/2$ state can be continuously tuned from onset at n $\sim 1.2 \times 10^{11}$ cm$^{-2}$ to a maximum $Δ_{5/2} = 625$ mK at n = $3.35 \times 10^{11}$ cm$^{-2}$. An unusual evolution of the reentrant integer quantum Hall states as a function of density is also reported. These devices can be expected to be useful in experiments aimed at proving the existence of non-Abelian phases useful for topological quantum computation.

preprint2015arXiv

Observation of a transition from a topologically ordered to a spontaneously broken symmetry phase

Until the late 1980s, phases of matter were understood in terms of Landau's symmetry breaking theory. Following the discovery of the quantum Hall effect the introduction of a second class of phases, those with topological order, was necessary. Phase transitions within the first class of phases involve a change in symmetry, whereas those between topological phases require a change in topological order. However, in rare cases transitions may occur between the two classes in which the vanishing of the topological order is accompanied by the emergence of a broken symmetry. Here, we report the existence of such a transition in a two-dimensional electron gas hosted by a GaAs/AlGaAs crystal. When tuned by hydrostatic pressure, the $ν=5/2$ fractional quantum Hall state, believed to be a prototype non-Abelian topological phase, gives way to a quantum Hall nematic phase. Remarkably, this nematic phase develops spontaneously, in the absence of any externally applied symmetry breaking fields.

preprint2014arXiv

Anomalous Gap Reversal of the $3+1/3$ and $3+1/5$ Fractional Quantum Hall States

In this work we report the opening of an energy gap at the filling factor $ν=3+1/3$, firmly establishing the ground state as a fractional quantum Hall state. This and other odd-denominator states unexpectedly break particle-hole symmetry. Specifically, we find that the relative magnitudes of the energy gaps of the $ν=3+1/3$ and $3+1/5$ states from the upper spin branch are reversed when compared to the $ν=2+1/3$ and $2+1/5$ counterpart states in the lower spin branch. Our findings raise the possibility that the former states have a non-conventional origin.

preprint2014arXiv

Observation of Incompressibility at $ν=4/11$ and $ν=5/13$

The region of filling factors $1/3<ν<2/5$ is predicted to support new types of fractional quantum Hall states with topological order different from that of the Laughlin-Jain or the Moore-Read states. Incompressibility is a necessary condition for the formation of such novel topological states. We find that at 6.9~mK incompressibility develops only at $ν=4/11$ and $5/13$, while the states at $ν=6/17$ and $3/8$ remain compressible. Our observations at $ν=4/11$ and $5/13$ are first steps towards understanding emergent topological order in these fractional quantum Hall states.

preprint2014arXiv

The $ν=5/2$ Fractional Quantum Hall State in the Presence of Alloy Disorder

We report quantitative measurements of the impact of alloy disorder on the $ν=5/2$ fractional quantum Hall state. Alloy disorder is controlled by the aluminum content $x$ in the Al$_x$Ga$_{1-x}$As channel of a quantum well. We find that the $ν=5/2$ state is suppressed with alloy scattering. To our surprise, in samples with alloy disorder the $ν=5/2$ state appears at significantly reduced mobilities when compared to samples in which alloy disorder is not the dominant scattering mechanism. Our results highlight the distinct roles of the different types of disorder present in these samples, such as the short-range alloy and the long-range Coulomb disorder.

preprint2012arXiv

Contrasting Energy Scales of the Reentrant Integer Quantum Hall States

We report drastically different onset temperatures of the reentrant integer quantum Hall states in the second and third Landau level. This finding is in quantitative disagreement with the Hartree-Fock theory of the bubble phases which is thought to describe these reentrant states. Our results indicate that the number of electrons per bubble in either the second or the third Landau level is likely different than predicted.

preprint2012arXiv

Exploration of the Limits to Mobility in Two-Dimensional Hole Systems in GaAs/AlGaAs Quantum Wells

We report on the growth and electrical characterization of a series of two-dimensional hole systems (2DHSs) used to study the density dependence of low temperature mobility in 20 nm GaAs/AlGaAs quantum wells. The hole density was controlled by changing the Al mole fraction and the setback of the delta-doping layer. We varied the density over a range from 1.8 $\times$ 10$^{10}$ cm$^{-2}$ to 1.9 $\times$ 10$^{11}$ cm$^{-2}$ finding a nonmonotonic dependence of mobility on density at T = 0.3 K. Surprisingly, a peak mobility of 2.3 $\times$ 10$^6$ cm$^2$/Vs was measured at a density of 6.5 $\times$ 10$^{10}$ cm$^{-2}$ with further increase in density resulting in reduced mobility. We discuss possible mechanisms leading to the observed non-monotonic density dependence of the mobility. Relying solely on interface roughness scattering to explain the observed drop in mobility at high density requires roughness parameters which are not consistent with measurements of similar electron structures. This leaves open the possibility of contributions from other scattering mechanisms at high density.

preprint2011arXiv

Evidence for the Collective Nature of the Reentrant Integer Quantum Hall States of the Second Landau Level

We report an unexpected sharp peak in the temperature dependence of the magnetoresistance of the reentrant integer quantum Hall states in the second Landau level. This peak defines the onset temperature of these states. We find that in different spin branches the onset temperatures of the reentrant states scale with the Coulomb energy. This scaling provides direct evidence that Coulomb interactions play an important role in the formation of these reentrant states evincing their collective nature.

preprint2011arXiv

Quantitative Analysis of the Disorder Broadening and the Intrinsic Gap for the $ν=5/2$ Fractional Quantum Hall State

We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the second Landau level. We apply this technique to several samples of vastly different densities and grown in different MBE chambers. Excellent agreement is found between the estimated intrinsic and numerically obtained energy gaps for the $ν=5/2$ fractional quantum Hall state. Futhermore, we quantify, for the first time, the dependence of the intrinsic gap at $ν=5/2$ on Landau level mixing.

preprint2011arXiv

Scattering Mechanisms in a High Mobility Low Density Carbon-Doped (100) GaAs Two-Dimensional Hole System

We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured. This is the highest mobility reported for a 2DHS to date. Using a back-gated sample geometry, the density dependence of mobility was studied from 2.8 x 10^10 cm^-2 to 1 x 10^11 cm^-2. The mobility vs. density cannot be fit to a power law dependence of the form mu ~ p^alpha using a single exponent alpha. Our data indicate a continuous evolution of the power law with alpha ranging from ~ 0.7 at high density and increasing to ~ 1.7 at the lowest densities measured. Calculations specific to our structure indicate a crossover of the dominant scattering mechanism from uniform background impurity scattering at high density to remote ionized impurity scattering at low densities. This is the first observation of a carrier density-induced transition from background impurity dominated to remote dopant dominated transport in a single sample.

preprint2010arXiv

Nonconventional odd denominator fractional quantum Hall states in the second Landau level

We report the observation of a new fractional quantum Hall state in the second Landau level of a two-dimensional electron gas at the Landau level filling factor $ν=2+6/13$. We find that the model of noninteracting composite fermions can explain the magnitude of gaps of the prominent 2+1/3 and 2+2/3 states. The same model fails, however, to account for the gaps of the 2+2/5 and the newly observed 2+6/13 states suggesting that these two states are of exotic origin.omposite fermion model. However, the weaker 2+2/5 and 2+6/13 states deviate significantly suggesting that these states are of exotic origin.