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Vincent E. Dorgan

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2016arXiv

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (Rc). Here we present a systematic study of scaling MoS2 devices and contacts with varying electrode metals and controlled deposition conditions, over a wide range of temperatures (80 to 500 K), carrier densities (10^12 to 10^13 1/cm^2), and contact dimensions (20 to 500 nm). We uncover that Au deposited in ultra-high vacuum (~10^-9 Torr) yields three times lower Rc than under normal conditions, reaching 740 Ohm-um and specific contact resistivity 3x10^-7 Ohm.cm2, stable for over four months. Modeling reveals separate Rc contributions from the Schottky barrier and the series access resistance, providing key insights on how to further improve scaling of MoS2 contacts and transistor dimensions. The contact transfer length is ~35 nm at 300 K, which is verified experimentally using devices with 20 nm contacts and 70 nm contact pitch (CP), equivalent to the "14 nm" technology node.

preprint2016arXiv

Role of remote interfacial phonon (RIP) scattering in heat transport across graphene/SiO2 interfaces

Heat transfer across interfaces of graphene and polar dielectrics (e.g. SiO2) could be mediated by direct phonon coupling, as well as electronic coupling with remote interfacial phonons (RIPs). To understand the relative contribution of each component, we develop a new pump-probe technique, called voltage-modulated thermoreflectance (VMTR), to accurately measure the change of interfacial thermal conductance under an electrostatic field. We employed VMTR on top gates of graphene field-effect transistors and find that the thermal conductance of SiO2/graphene/SiO2 interfaces increases by up to ΔG=0.8 MW m-2 K-1 under electrostatic fields of <0.2 V nm-1 . We propose two possible explanations for the observed ΔG. First, since the applied electrostatic field induces charge carriers in graphene, our VMTR measurements could originate from heat transfer between the charge carriers in graphene and RIPs in SiO2. Second, the increase in heat conduction could be caused by better conformity of graphene interfaces un-der electrostatic pressure exerted by the induced charge carriers. Regardless of the origins of the observed ΔG, our VMTR measurements establish an upper limit for heat transfer from unbiased graphene to SiO2 substrates via RIP scattering; i.e., only <2 % of the interfacial heat transport is facilitated by RIP scattering even at a carrier concentration of 4x10^12 cm-2.

preprint2013arXiv

High-Field Electrical and Thermal Transport in Suspended Graphene

We study the intrinsic transport properties of suspended graphene devices at high fields (>1 V/um) and high temperatures (>1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6x10^7 cm/s (1.7x10^7 cm/s), and peak (average) thermal conductivity of 530 W/m/K (310 W/m/K), at 1000 K. The saturation velocity is 2-4 times and the thermal conductivity 10-17 times greater than in silicon at such elevated temperatures. However, the thermal conductivity shows a steeper decrease at high temperature than in graphite, consistent with stronger effects of second-order three-phonon scattering. Our analysis of sample-to-sample variation suggests the behavior of "cleaner" devices most closely approaches the intrinsic high-field properties of graphene. This study reveals key features of charge and heat flow in graphene up to device breakdown at ~2230 K in vacuum, highlighting remaining unknowns under extreme operating conditions.

preprint2012arXiv

Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors

We use simulations to examine current saturation in sub-micron graphene transistors on SiO2/Si. We find self-heating is partly responsible for current saturation (lower output conductance), but degrades current densities >1 mA/um by up to 15%. Heating effects are reduced if the supporting insulator is thinned, or in shorter channel devices by partial heat sinking at the contacts. The transient behavior of such devices has thermal time constants of ~30-300 ns, dominated by the thickness of the supporting insulator and that of device capping layers (a behavior also expected in ultrathin body SOI transistors). The results shed important physical insight into the high-field and transient behavior of graphene transistors.

preprint2010arXiv

Mobility and Saturation Velocity in Graphene on SiO2

We examine mobility and saturation velocity in graphene on SiO2 above room temperature (300-500 K) and at high fields (~1 V/um). Data are analyzed with practical models including gated carriers, thermal generation, "puddle" charge, and Joule heating. Both mobility and saturation velocity decrease with rising temperature above 300 K, and with rising carrier density above 2x10^12 cm^-2. Saturation velocity is >3x10^7 cm/s at low carrier density, and remains greater than in Si up to 1.2x10^13 cm^-2. Transport appears primarily limited by the SiO2 substrate, but results suggest intrinsic graphene saturation velocity could be more than twice that observed here.