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Researcher profile

Muhammad Nadeem

Muhammad Nadeem contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scieess.SYmath.GMmath.OCOther Computer ScienceSystems and Control

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Published work

6 published item(s)

preprint2022arXiv

Dynamic State Estimation of Nonlinear Differential Algebraic Equation Models of Power Networks

This paper investigates the joint problems of dynamic state estimation of algebraic variables (voltage and phase angle) and generator states (rotor angle and frequency) of nonlinear differential algebraic equation (NDAE) power network models, under uncertainty. Traditionally, these two problems have been decoupled due to complexity of handling NDAE models. In particular, this paper offers the first attempt to solve the aforementioned problem in a coupled approach where the algebraic and generator states estimates are simultaneously computed. The proposed estimation algorithm herein is endowed with the following properties: (i) it is fairly simple to implement and based on well-understood Lyapunov theory; (ii) considers various sources of uncertainty from generator control inputs, loads, renewables, process and measurement noise; (iii) models phasor measurement unit installations at arbitrary buses; and (iv) is computationally less intensive than the decoupled approach in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Optimizing Topological Switching in Confined 2D-Xene Nanoribbons via Finite-Size Effects

In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics associated with the intrinsic band topology and the finite-size effects on gate-induced topological switching. First, due to intertwining with intrinsic band topology-driven energy-zero modes in the pristine case, spin-filtered chiral edge states in zigzag-Xene nanoribbons remain gapless and protected against backward scattering even with finite inter-edge overlapping in ultra-narrow ribbons, i.e., a 2D quantum spin Hall material turns into a 1D topological metal. Second, mainly due to width- and momentum-dependent tunability of the gate-induced inter-edge coupling, the threshold-voltage required for switching between gapless and gapped edge states reduces as the width decreases, without any fundamental lower bound. Third, when the width of zigzag-Xene nanoribbons is smaller than a critical limit, topological switching between edge states can be attained without bulk bandgap closing and reopening. This is primarily due to the quantum confinement effect on the bulk band spectrum which increases the nontrivial bulk bandgap with decrease in width. The existence of such protected gapless edge states and reduction in threshold-voltage accompanied by enhancement in the bulk bandgap overturns the general wisdom of utilizing narrow-gap and wide channel materials for reducing the threshold-voltage in a standard field effect transistor analysis and paves the way toward low-voltage topological devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Predicting the Students Involvements and its Impacts on Learning Outcomes Through Online Education During Covid-19

Everybody knows very well about the COVID-19 pandemic, lockdown, and its impacts and effects on every field of life, from childhood to senior citizens, from local to global. The underlying research study focuses on students' involvement in online classes. This paper assesses the effect of the COVID-19 pandemic on the students' participation and involvement during online classes compared to the physical classes, cheating behavior, health effects, and study styles of the students of diverse degrees and age groups. This research study contributes to the real problems and challenges that students faced during online classes during the COVID-19 pandemic. The percentages of the students' responses with different color schemes shown in Fig. 1, Fig. 2, Fig.3(a), Fig.3(b) and Fig.4 are conveying powerful and meaningful insight. These figures and the results given in Table I and Table II indicate that most students are not fully involved during online classes due to technical issues, remote distance, etc. We applied the Test here because we do not have exact population means. We used ttest_1samp with default value 0 to compute the variables' statistics and p-value. These values are minimal in favor of rejecting the null or H0 (hypothesis) and accepting the alternate or H1 (hypothesis). It further means that students' involvement during online classes is severely affected.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Inequalities of Chebyshev-Pólya-Szegö Type via Generalized Proportional Fractional Integral Operators

This study is an example of a solid connection between fractional analysis and inequality theory, and includes new inequalities of the Pólya-Szeg% ö-Chebyshev type obtained with the help of Generalized Proportional Fractional integral operators. The results have been performed by using Generalized Proportional Fractional integral operators, some classical inequalities such as AM-GM inequality, Cauchy-Schwarz inequality and Taylor series expansion of exponential function. The findings give new approaches to some types of inequalities that have involving the product of two functions in inequality theory.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Overcoming Boltzmann's Tyranny in a Transistor via the Topological Quantum Field Effect

The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the device on and off, and in a conventional transistor it is limited by Boltzmann's tyranny to kTln(10)/q, or 60 mV per decade. Here, we demonstrate that the sub-threshold swing of a topological transistor, in which conduction is enabled by a topological phase transition via electric field switching, can be sizably reduced in a non-interacting system by modulating the Rashba spin-orbit interaction via a top-gate electric field. We refer to this as the Topological Quantum Field Effect and to the transistor as a Topological Quantum Field Effect transistor (TQFET). By developing a general theoretical framework for quantum spin Hall materials with honeycomb lattices we explicitly show that the Rashba interaction can reduce the sub-threshold swing by more than 25% compared to Boltzmann's limit in currently available materials, but without any fundamental lower bound, a discovery that can guide future materials design and steer the engineering of topological quantum devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors -- A Perspective Review

Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief introduction of Haldane model for spineless fermions, following three fundamental quantum anomalous Hall models are discussed in this perspective review: (i) low-energy effective four band model for magnetic-doped topological insulator (Bi,Sb)2Te3 thin films, (ii) four band tight-binding model for graphene with magnetic adatoms, and (iii) two (three) band spinfull tight-binding model for ferromagnetic spin-gapless semiconductors with honeycomb (kagome) lattice where ground state is intrinsically ferromagnetic. These models cover two-dimensional Dirac materials hosting spinless, spinful and spin-degenerate Dirac points where various mass terms open a band gap and lead to quantum anomalous Hall effect. With emphasize on the topological phase transition driven by ferromagnetic exchange interaction and its interplay with spin-orbit-coupling, we discuss various symmetry constraints on the nature of mass term and the materialization of these models. We hope this study will shed light on the fundamental theoretical perspectives of quantum anomalous Hall materials.

0 citations0 reviewsNo code linkedOpen access