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Researcher profile

Michael S. Fuhrer

Michael S. Fuhrer contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conphysics.app-phphysics.chem-phphysics.comp-phphysics.optics

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Published work

27 published item(s)

preprint2026arXiv

Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices

The development of advanced electronic devices is contingent upon sustainable material development and pioneering research breakthroughs. Traditional semiconductor-based electronic technology faces constraints in material thickness scaling and energy efficiency. Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as promising candidates for next-generation nanoelectronics and optoelectronic applications, boasting high electron mobility, mechanical strength, and a customizable band gap. Despite these merits, the Fermi level pinning effect introduces uncontrollable Schottky barriers at metal-2D-TMD contacts, challenging prediction through the Schottky-Mott rule. These barriers fundamentally lead to elevated contact resistance and limited current-delivery capability, impeding the enhancement of 2D-TMD transistor and integrated circuit properties. In this review, we succinctly outline the Fermi pinning effect mechanism and peculiar contact resistance behavior at metal/2D-TMD interfaces. Subsequently, highlights on the recent advances in overcoming contact resistance in 2D-TMDs devices, encompassing interface interaction and hybridization, van der Waals (vdW) contacts, prefabricated metal transfer and charge-transfer doping will be addressed. Finally, the discussion extends to challenges and offers insights into future developmental prospects.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

$c$-axis transport in UTe$_{2}$: Evidence of Three Dimensional Conductivity Component

We study the temperature dependence of electrical resistivity for currents directed along all crystallographic axes of the spin-triplet superconductor UTe$_{2}$. We focus particularly on an accurate determination of the resistivity along the $c$-axis ($ρ_c$) by using a generalized Montgomery technique that allows extraction of crystallographic resistivity components from a single sample. In contrast to expectations from the observed highly anisotropic band structure, our measurement of the absolute values of resistivities in all current directions reveals a surprisingly nearly isotropic transport behavior at temperatures above Kondo coherence, with $ρ_c \sim ρ_b \sim 2ρ_a$, that evolves to reveal qualitatively distinct behaviors on cooling. The temperature dependence of $ρ_c$ exhibits a peak at a temperature much lower than the onset of Kondo coherence observed in $ρ_a$ and $ρ_b$, consistent with features in magnetotransport and magnetization that point to a magnetic origin. A comparison to the temperature-dependent evolution of the scattering rate observed in angle-resolved photoemission spectroscopy experiments provides important insights into the underlying electronic structure necessary for building a microscopic model of superconductivity in UTe$_{2}$.

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preprint2022arXiv

Increased Phase Coherence Length in a Porous Topological Insulator

The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocalization (WAL) was present in all samples, and remarkably the phase coherence length doubled in the porous samples. This increase is likely due to the large Fermi velocity of the Dirac surface states. Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics.

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preprint2022arXiv

Optimizing Topological Switching in Confined 2D-Xene Nanoribbons via Finite-Size Effects

In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics associated with the intrinsic band topology and the finite-size effects on gate-induced topological switching. First, due to intertwining with intrinsic band topology-driven energy-zero modes in the pristine case, spin-filtered chiral edge states in zigzag-Xene nanoribbons remain gapless and protected against backward scattering even with finite inter-edge overlapping in ultra-narrow ribbons, i.e., a 2D quantum spin Hall material turns into a 1D topological metal. Second, mainly due to width- and momentum-dependent tunability of the gate-induced inter-edge coupling, the threshold-voltage required for switching between gapless and gapped edge states reduces as the width decreases, without any fundamental lower bound. Third, when the width of zigzag-Xene nanoribbons is smaller than a critical limit, topological switching between edge states can be attained without bulk bandgap closing and reopening. This is primarily due to the quantum confinement effect on the bulk band spectrum which increases the nontrivial bulk bandgap with decrease in width. The existence of such protected gapless edge states and reduction in threshold-voltage accompanied by enhancement in the bulk bandgap overturns the general wisdom of utilizing narrow-gap and wide channel materials for reducing the threshold-voltage in a standard field effect transistor analysis and paves the way toward low-voltage topological devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3

1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States 5 School of Physics, the University of Melbourne, Melbourne, VIC 3010, Australia 6 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of New South Wales, 2052 Sydney, Australia 9 Center of Condensed Matter Sciences and Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan 10 Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dirac-Source Diode with Sub-unity Ideality Factor

An increase in power consumption necessitates a low-power circuit technology to extend Moore&#39;s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (n) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS Schottky diode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene. For the developed DS Schottky diode, n<1 for more than two decades of drain current with a minimum value of 0.8, and the rectifying ratio is large (100000). The realisation of a DS Schottky diode paves the way for the development of low-power electronic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic bandstructure of in-plane ferroelectric van der Waals $β&#39;-In_{2}Se_{3}$

Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $α$ and $β$&#39; phases, respectively. In this work, we utilise angle-resolved photoelectron spectroscopy to directly measure the electronic bandstructure of $β&#39;-In_{2}Se_{3}$, and compare to hybrid density functional theory (DFT) calculations. In agreement with DFT, we find the band structure is highly two-dimensional, with negligible dispersion along the c-axis. Due to n-type doping we are able to observe the conduction band minima, and directly measure the minimum indirect (0.97 eV) and direct (1.46 eV) bandgaps. We find the Fermi surface in the conduction band is characterized by anisotropic electron pockets with sharp in-plane dispersion about the $\overline{M}$ points, yielding effective masses of 0.21 $m_{0}$ along $\overline{KM}$ and 0.33 $m_{0}$ along $\overline{ΓM}$. The measured band structure is well supported by hybrid density functional theory calculations. The highly two-dimensional (2D) bandstructure with moderate bandgap and small effective mass suggest that $β&#39;-In_{2}Se_{3}$ is a potentially useful new van der Waals semiconductor. This together with its ferroelectricity makes it a viable material for high-mobility ferroelectric-photovoltaic devices, with applications in non-volatile memory switching and renewable energy technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface

The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy to elucidate the physical and electronic structure of both Ca- and Mg-intercalated epitaxial graphene on 6H-SiC(0001). We find that Ca intercalates underneath the buffer layer and bonds to the Si-terminated SiC surface, breaking the C-Si bonds of the buffer layer i.e. &#39;freestanding&#39; the buffer layer to form Ca-intercalated quasi-freestanding bilayer graphene (Ca-QFSBLG). The situation is similar for the Mg-intercalation of epitaxial graphene on SiC(0001), where an ordered Mg-terminated reconstruction at the SiC surface and Mg bonds to the Si-terminated SiC surface are formed, resulting in Mg-intercalated quasi-freestanding bilayer graphene (Mg-QFSBLG). Ca-intercalation underneath the buffer layer has not been considered in previous studies of Ca-intercalated epitaxial graphene. Furthermore, we find no evidence that either Ca or Mg intercalates between graphene layers. However, we do find that both Ca-QFSBLG and Mg-QFSBLG exhibit very low workfunctions of 3.68 and 3.78 eV, respectively, indicating high n-type doping. Upon exposure to ambient conditions, we find Ca-QFSBLG degrades rapidly, whereas Mg-QFSBLG remains remarkably stable.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Long-lived populations of momentum- and spin-indirect excitons in monolayer WSe$_2$

Monolayer transition metal dichalcogenides are a promising platform to investigate many-body interactions of excitonic complexes. In monolayer tungsten diselenide, the ground-state exciton is dark (spin-indirect), and the valley degeneracy allows low-energy dark momentum-indirect excitons to form. Interactions between the dark exciton species and the optically accessible bright exciton (X) are likely to play significant roles in determining the optical properties of X at high power, as well as limiting the ultimate exciton densities that can be achieved, yet so far little is known about these interactions. Here, we demonstrate long-lived dense populations of momentum-indirect intervalley ($X_K$) and spin-indirect intravalley (D) dark excitons by time-resolved photoluminescence measurements (Tr-PL). Our results uncover an efficient inter-state conversion between X to D excitons through the spin-flip process and the one between D and $X_K$ excitons mediated by the exchange interaction (D + D to $X_K$ + $X_K$). Moreover, we observe a persistent redshift of the X exciton due to strong excitonic screening by $X_K$ exciton with a response time in the timescale of sub-ns, revealing a non-trivial inter-state exciton-exciton interaction. Our results provide a new insight into the interaction between bright and dark excitons, and point to a possibility to employ dark excitons for investigating exciton condensation and the valleytronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnesium-intercalated graphene on SiC: highly n-doped air-stable bilayer graphene at extreme displacement fields

We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-doping and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesium intercalation, the single massless Dirac band of epitaxial monolayer graphene is transformed into the characteristic massive double-band Dirac spectrum of quasi-freestanding bilayer graphene. Analysis of the spectrum using a simple tight binding model indicates that magnesium intercalation results in an n-type doping of 2.1 $\times$ 10$^{14}$ cm$^{-2}$, creates an extremely high displacement field of 2.6 V/nm, opening a considerable gap of 0.36 eV at the Dirac point. This is further confirmed by density-functional theory calculations for quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide, which show a similar doping level, displacement field and bandgap. Finally, magnesium-intercalated samples are surprisingly robust to ambient conditions; no significant changes in the electronic structure are observed after 30 minutes exposure in air.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Multidimensional Analysis of Excitonic Spectra of Monolayers of Tungsten Disulphide: Towards Computer Aided Identification of Structural and Environmental Perturbations of 2D Materials

Despite 2D materials holding great promise for a broad range of applications, the proliferation of devices and their fulfillment of real-life demands are still far from being realized. Experimentally obtainable samples commonly experience a wide range of perturbations (ripples and wrinkles, point and line defects, grain boundaries, strain field, doping, water intercalation, oxidation, edge reconstructions) significantly deviating the properties from idealistic models. These perturbations, in general, can be entangled or occur in groups with each group forming a complex perturbation making the interpretations of observable physical properties and the disentanglement of simultaneously acting effects a highly non-trivial task even for an experienced researcher. Here we generalise statistical correlation analysis of excitonic spectra of monolayer WS2, acquired by hyperspectral absorption and photoluminescence imaging, to a multidimensional case, and examine multidimensional correlations via unsupervised machine learning algorithms. Using principle component analysis we are able to identify 4 dominant components that are correlated with tensile strain, disorder induced by adsorption or intercalation of environmental molecules, multi-layer regions and charge doping, respectively. This approach has the potential to determine the local environment of WS2 monolayers or other 2D materials from simple optical measurements, and paves the way towards advanced, machine-aided, characterisation of monolayer matter.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Overcoming Boltzmann&#39;s Tyranny in a Transistor via the Topological Quantum Field Effect

The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the device on and off, and in a conventional transistor it is limited by Boltzmann&#39;s tyranny to kTln(10)/q, or 60 mV per decade. Here, we demonstrate that the sub-threshold swing of a topological transistor, in which conduction is enabled by a topological phase transition via electric field switching, can be sizably reduced in a non-interacting system by modulating the Rashba spin-orbit interaction via a top-gate electric field. We refer to this as the Topological Quantum Field Effect and to the transistor as a Topological Quantum Field Effect transistor (TQFET). By developing a general theoretical framework for quantum spin Hall materials with honeycomb lattices we explicitly show that the Rashba interaction can reduce the sub-threshold swing by more than 25% compared to Boltzmann&#39;s limit in currently available materials, but without any fundamental lower bound, a discovery that can guide future materials design and steer the engineering of topological quantum devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors -- A Perspective Review

Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief introduction of Haldane model for spineless fermions, following three fundamental quantum anomalous Hall models are discussed in this perspective review: (i) low-energy effective four band model for magnetic-doped topological insulator (Bi,Sb)2Te3 thin films, (ii) four band tight-binding model for graphene with magnetic adatoms, and (iii) two (three) band spinfull tight-binding model for ferromagnetic spin-gapless semiconductors with honeycomb (kagome) lattice where ground state is intrinsically ferromagnetic. These models cover two-dimensional Dirac materials hosting spinless, spinful and spin-degenerate Dirac points where various mass terms open a band gap and lead to quantum anomalous Hall effect. With emphasize on the topological phase transition driven by ferromagnetic exchange interaction and its interplay with spin-orbit-coupling, we discuss various symmetry constraints on the nature of mass term and the materialization of these models. We hope this study will shed light on the fundamental theoretical perspectives of quantum anomalous Hall materials.

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preprint2020arXiv

Quantum Transport in Air-stable Na3Bi Thin Films

Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin- and ultra-thin films grown via molecular beam epitaxy to ultra-high vacuum environments. Here we demonstrate air-stable Na3Bi thin films passivated with magnesium difluoride (MgF2) or silicon (Si) capping layers. Electrical measurements show that deposition of MgF2 or Si has minimal impact on the transport properties of Na3Bi whilst in ultra-high vacuum. Importantly, the MgF2-passivated Na3Bi films are air-stable and remain metallic for over 100 hours after exposure to air, as compared to near instantaneous degradation when they are unpassivated. Air stability enables transfer of films to a conventional high-magnetic field cryostat, enabling quantum transport measurements which verify that the Dirac semimetal character of Na3Bi films is retained after air exposure.

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preprint2020arXiv

Two-dimensional Ga$_2$O$_3$ glass: a large scale passivation and protection material for monolayer WS$_2$

Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration of TMDCs into practical all-dielectric heterostructures hinges on the ability to passivate and protect them against necessary fabrication steps on large scales. Despite its limited scalability, encapsulation of TMDCs in hexagonal boron nitride (hBN) currently has no viable alternative for achieving high performance of the final device. Here, we show that the novel, ultrathin Ga$_2$O$_3$ glass is an ideal centimeter-scale coating material that enhances optical performance of the monolayers and protects them against further material deposition. In particular, Ga$_2$O$_3$ capping of commercial grade WS$_2$ monolayers outperforms hBN in both scalability and optical performance at room temperature. These properties make Ga$_2$O$_3$ highly suitable for large scale passivation and protection of monolayer TMDCs in functional heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Dirac-point photocurrents due to photothermoelectric effect in non-uniform graphene devices

Q. Ma et al.[1] recently reported a strong photocurrent associated with charge neutrality in graphene devices with non-uniform geometries, which they interpreted as an intrinsic photoresponse enhanced by the momentum non-relaxing nature of electron-electron collisions at charge neutrality. Here we argue that gradients in charge carrier density give rise to a photothermoelectric effect (PTE) which is strongly peaked around charge neutrality, i.e. at p-n junctions, and such p-n junctions naturally arise at the edges of graphene devices due to fringing capacitance. Using known parameters, the PTE effect in the presence of charge density gradients predicts the sign, spatial distribution, gate voltage dependence, and temperature dependence of the photoresponse in non-uniform graphene devices, including predicting the observed sign change of the signal away from charge neutrality, and the non-monotonic temperature dependence, neither of which is explained by the intrinsic photocurrents in graphene. We propose future experiments which may disentangle the contributions of PTE and intrinsic photocurrent in graphene devices.

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preprint2019arXiv

Disentangling the effects of doping, strain and defects in monolayer WS2 by optical spectroscopy

Monolayers of transition metal dichalcogenides (TMdC) are promising candidates for realization of a new generation of optoelectronic devices. The optical properties of these two-dimensional materials, however, vary from flake to flake, or even across individual flakes, and change over time, all of which makes control of the optoelectronic properties challenging. There are many different perturbations that can alter the optical properties, including charge doping, defects, strain, oxidation, and water intercalation. Identifying which perturbations are present is usually not straightforward and requires multiple measurements using multiple experimental modalities, which presents barriers when attempting to optimise preparation of these materials. Here, we apply highresolution photoluminescence and differential reflectance hyperspectral imaging in situ to CVD-grown WS2 monolayers. By combining these two optical measurements and using a statistical correlation analysis we are able to disentangle three contributions modulating optoelectronic properties of these materials: electron doping, strain and defects. In separating these contributions, we also observe that the B-exciton energy is less sensitive to variations in doping density than A-excitons.

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preprint2019arXiv

Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi

A two-dimensional topological insulator (2DTI) has an insulating bulk and helical spin-polarised edge modes robust to backscattering by non-magnetic disorder. While ballistic transport has been demonstrated in 2DTIs over short distances, larger samples show significant backscattering and a nearly temperature-independent resistance whose origin is unclear. 2DTI edges have shown a spin polarisation, however the degree of helicity is difficult to quantify from spin measurements. Here, we study 2DTI few-layer Na3Bi on insulating Al2O3. A non-local conductance measurement geometry enables sensitive detection of the edge conductance in the topological regime, with an edge mean free path ~100 nm. Magnetic field suppresses spin-flip scattering in the helical edges, resulting in a giant negative magnetoresistance (GNMR), up to 80% at 0.9 T. Comparison to theory indicates >98% of scattering is helical spin scattering significantly exceeding the maximum (67%) expected for a non-helical metal. GNMR, coupled with non-local measurements demonstrating edge conduction, thus provides an unambiguous experimental signature of helical edges that we expect to be generically useful in understanding 2DTIs.

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preprint2016arXiv

Spatial Charge Inhomogeneity and Defect States in Topological Dirac Semimetal Thin Films

The close approach of the Fermi energy EF of a Dirac semimetal to the Dirac point ED uncovers new physics such as velocity renormalization,1,2,3 and the Dirac plasma 4,5 at |EF -ED| < kBT, where kBT is the thermal energy. In graphene, substrate disorder drives fluctuations in EF. Three-dimensional topological Dirac semimetals (TDS)6,7 obviate the substrate, and should show reduced EF fluctuations due to better metallic screening and higher dielectric constants. Here we map the potential fluctuations in TDS Na3Bi using a scanning tunneling microscope. The rms potential fluctuations are significantly smaller than room temperature (ΔEF,rms = 4-6 meV = 40-70 K) and comparable to the highest quality graphene on h-BN;8 far smaller than graphene on SiO2,9,10 or the Dirac surface state of a topological insulator.11 Surface Na vacancies produce a novel resonance close to the Dirac point with surprisingly large spatial extent and provides a unique way to tune the surface density of states in a TDS thin-film material.

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preprint2012arXiv

Insulating behavior in ultra-thin bismuth selenide field effect transistors

Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that ultrathin Bi2Se3 FETs are n-type, and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.

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preprint2012arXiv

Intrinsic Electron-Phonon Resistivity in Bi2Se3 in the Topological Regime

We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the carrier density is strongly temperature dependent reflecting thermal activation from the nearby bulk valence band, while above the Dirac point, unipolar n-type surface conduction is observed with negligible thermal activation of bulk carriers. In this regime linear resistivity vs. temperature reflects intrinsic electron-acoustic phonon scattering. Quantitative comparison with a theoretical transport calculation including both phonon and disorder effects gives the ratio of deformation potential to Fermi velocity D/\hbarvF = 4.7 Å-1. This strong phonon scattering in the Bi2Se3 surface state gives intrinsic limits for the conductivity and charge carrier mobility at room temperature of ~550 μS per surface and ~10,000 cm2/Vs.

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preprint2012arXiv

Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate the most fundamental signature of the STI: ambipolar metallic electronic transport in the topological surface of an insulating bulk. Here we show that the surfaces of thin (<10 nm), low-doped Bi2Se3 (\approx10^17/cm3) crystals are strongly electrostatically coupled, and a gate electrode can completely remove bulk charge carriers and bring both surfaces through the Dirac point simultaneously. We observe clear surface band conduction with linear Hall resistivity and well-defined ambipolar field effect, as well as a charge-inhomogeneous minimum conductivity region. A theory of charge disorder in a Dirac band explains well both the magnitude and the variation with disorder strength of the minimum conductivity (2 to 5 e^2/h per surface) and the residual (puddle) carrier density (0.4 x 10^12 cm^-2 to 4 x 10^12 cm^-2). From the measured carrier mobilities 320 cm^2/Vs to 1,500 cm^2/Vs, the charged impurity densities 0.5 x 10^13 cm^-2 to 2.3 x 10^13 cm^-2 are inferred. They are of a similar magnitude to the measured doping levels at zero gate voltage (1 x 10^13 cm^-2 to 3 x 10^13 cm^-2), identifying dopants as the charged impurities.

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preprint2011arXiv

Correlated charged impurity scattering in graphene

Understanding disorder in graphene is essential for electronic applications; in contrast to conventional materials, the extraordinarily low electron-phonon scattering1, 2 in graphene implies that disorder3-7 dominates its resistivity even at room temperature. Charged impurities5, 8-10 have been identified as an important disorder type in graphene on SiO2 substrates11, 12, giving a nearly linear carrier-density-dependent conductivity σ(n), and producing electron and hole puddles13-15 which determine the magnitude of graphene&#39;s minimum conductivity σmin10. Correlations of charged impurities are known to be essential in achieving the highest mobilities in remotely-doped semiconductor heterostructures16-18, and are present to some degree in any impurity system at finite temperature. Here we show that even modest correlations in the position of charged impurities, realized by annealing potassium on graphene, can increase the mobility by more than a factor of four. The results are well understood theoretically19 considering an impurity correlation length which is temperature dependent but independent of impurity density. Impurity correlations also naturally explain the sub-linear σ(n) commonly observed in substrate-bound graphene devices2, 11, 12, 20.

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preprint2011arXiv

Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition

We synthesize large-area graphene via atmospheric-pressure (AP) chemical vapor deposition (CVD) on copper, and transfer to SiO2 wafers. In contrast to low-pressure (LP) CVD on copper, optical contrast and atomic force microscopy measurements show AP-CVD graphene contains significant multi-layer areas. Raman spectroscopy always shows a single Lorentzian 2D peak, however systematic differences are observed in the 2D peak energy, width, and intensity for single- and multi-layer regions. We conclude that graphene multi-layers grown by AP-CVD on Cu are rotationally disordered.

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preprint2010arXiv

Charge transport in dual gated bilayer graphene with Corbino geometry

The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a two channel conductance model including parallel thermal activation and variable range hopping channels, which gives the electric-field-dependent band gap whose magnitude is found to be in good agreement with infrared absorption experiments. Low temperature transport is similar to previous studies of dual-gated bilayer graphene with edges, suggesting that edge transport does not play an important role.

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preprint2009arXiv

Charged impurity scattering in bilayer graphene

We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature. Charged impurity scattering gives a conductivity which is supra-linear in carrier density, with a magnitude similar to single-layer graphene for the measured range of carrier densities of 2-4 x 10^12 cm^-2. Upon addition of charged impurities of concentration n_imp, the minimum conductivity Sigma_min decreases proportional to n_imp^-1/2, while the electron and hole puddle carrier density increases proportional to n_imp^1/2. These results for the intentional deposition of potassium on BLG are in good agreement with theoretical predictions for charged impurity scattering. However, our results also suggest that charged impurity scattering alone cannot explain the observed transport properties of pristine BLG on SiO2 before potassium doping.

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